Chairs
| A. Dimoulas |
|
NCSR "DEMOKRITOS" |
| E. Gusev |
|
IBM T. J. Watson Research Center |
| P. McIntyre |
|
Stanford University |
| M. Heyns |
|
IMEC vzw |
| S. Takagi |
|
University of Tokyo |
| M. Orlowski |
|
Motorola |
Symposium Support
Applied Materials, Inc.
European Commission 6th Framework Program
Freescale Semiconductors
Genus Inc.
IBM T.J. Watson Research Center
UMICORE
* Invited paper
TUTORIAL
High-Permittivity Dielectrics and High-Mobility Semiconductors for Advanced Field Effect Transistors
Monday March 28, 2005
1:30 PM - 5:00 PM
Room 2007 (Moscone West)
This tutorial will provide an overview of recent trends and guiding principles motivating the combination of high permittivity dielectrics and high mobility semiconducting channel materials in nano-scale metal oxide semiconducter (MOS) field effect devices. The 1st portion of the tutorial (McIntyre) will reviews deposition of alternative gate dielectrics by CVD, ALD, and physical vapor deposition methods. The effects of dielectric microstructure, interface structure and the phonon properties of high-k materials in controlling key MOS electrical characteristics, such as carrier mobility, will described. Compatibility of high-k dielectrics with various gate metals and novel semiconductor substrates, and prospects for "ultrahigh"dielectric materials (k > 50) will also be addressed. In the 2nd half of the tutorial (Uchida), channel engineering to enhance mobility will be discussed in terms of strain effects and new materials introduction. The strain effects on carrier mobility in silicon MOSFETs will be reviewed in terms of strain directions and surface orientations. The process techniques used to induce strains will be also described. The possibilities and issues associated with introduction of new channel materials such as germanium will be also discussed.
Instructors:
Paul C. McIntyre, Stanford University
Ken Uchida, Toshiba Corporation/Stanford University
SESSION G1: Gate Dielectrics on Ge-I
Chairs: A. Dimoulas and D-L Kwong
Tuesday Morning, March 29, 2005
Room 2007 (Moscone West)
8:30 AM *G1.1
High Mobility Channel Engineering. Eugene A. Fitzgerald, Dept. of Materials Science and Engineering, MIT, Cambridge, Massachusetts.
9:00 AM *G1.2
Interface Reaction of High-k Films with Germanium Substrate. Akira
Toriumi, Koji Kita, Masahiro Toyama and Kentaro Kyuno;
The University of Tokyo, Tokyo, Japan.
9:30 AM G1.3
Growth of Hafnium Oxide on Passivated Germanium(100). Sandrine Rivillon and Yves J. Chabal; Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey.
9:45 AM G1.4
Direct Nitridation of Ge Substrates by Nitrogen Radical Source for Application to Ge MIS Structures. Tatsuro Maeda1, Tetsuji Yasuda1, Masayasu Nishizawa1, Noriyuki Miyata1, Yukinori Morita1 and Shinichi Takagi1,2; 1MIRAI, ASRC-AIST, Tsukuba, Ibaraki, Japan; 2The University of Tokyo, Tokyo, Japan.
10:00 AM BREAK
SESSION G2: Gate Dielectrics on Ge II
Chairs: S. Takagi and A. Toriumi
Tuesday Morning, March 29, 2005
Room 2007 (Moscone West)
10:30 AM *G2.1
Interface Engineering for High-k/Ge CMOS Devices. W.
Bai1, N. Lu1, A. Ritenour1,
M. L. Lee2, E. A. Fitzgerald2, D. A. Antoniadis1
and Dim-Lee Kwong3; 1Microsystems
Technology Laboratory, MIT, Cambridge, Massachusetts; 2Department
of Materials Science and Engineering, MIT, Cambridge, Massachusetts;
3University of Texas at Austin, Dept of Electrical
and Computer Engineering, Austin, Texas.
11:00 AM G2.2
Effects of the Oxygen Precursors on the Electrical and Structural
Properties of HfO2 Films Grown by ALD on Ge.
Sabina Spiga, Giovanna Scarel, Claudia Wiemer, Grazia
Tallarida, Sandro Ferrari and Marco Fanciulli; Laboratorio Nazionale
MDM-INFM, Agrate Brianza, Italy.
11:15 AM G2.3
HfO2 High-κ Gate Dielectrics on High Mobility
Semiconductors by Atomic-Oxygen-Beam-Assisted Deposition.
Athanasios Dimoulas1, Georgia Mavrou1,
George Vellianitis1, Evangelos Evangelou1,
Nikos Boukos1, Michel Houssa2, Matty Caymax2
and Yukiko Furukawa3; 1Institute of Materials
Science, NCSR DEMOKRITOS, Athens, Greece; 2IMEC,
Leuven, Belgium; 3Philips Research Leuven, Leuven,
Belgium.
11:30 AM G2.4
Atomic Layer Deposition (ALD) of High-k Dielectric Films
and Metal Nitride Gate Stacks for Ge MOS Devices. Kyoungha
Kim2,1, Jin-seong Park1, Philippe
de Rouffignac1 and Roy G. Gordon1; 1Chemistry
and Chemical Biology, Harvard University, Cambridge, Massachusetts;
2Division of Engineering and Applied Sciences, Harvard
University, Cambridge, Massachusetts.
11:45 AM G2.5
Germanium Oxynitride Gate Dielectrics Prepared by Rapid Thermal
Processing. Ali Khakifirooz, Andrew Ritenour, Minjoo
L. Lee and Dimitri A. Antoniadis; Microsystems Technology Laboratories,
Massachusetts Institute of Technology, Cambridge, Massachusetts.
SESSION G3: Gate Dielectrics on III-V Compound Semiconductors
Chairs: R. Kwo and M. Orlowski
Tuesday Afternoon, March 29, 2005
Room 2007 (Moscone West)
1:30 PM *G3.1
High Mobility III-V Heterostructure MOSFET Technology with
High-κ Gate Dielectric Stack. Matthias Passlack,
Ravi Droopad, Jonathan Abrokwah and Karthik Rajagopalan; Microwave
and Mixed-Signal Technologies Laboratory, Freescale Semiconductor,
Inc., Tempe, Arizona.
2:00 PM G3.2
Depletion Mode n-Channel InGaAs/GaAs MOSFET Using Ga2O3(Gd2O3)
as a Gate Dielectric. Kou-Liang Jaw1,
Yiwen Chen1, Pejun Tsai1, Hung-Pin Yang2,
Pen Chang1, J. Raynien Kwo3, Jim Y. Chi2
and Minghwei Hong1; 1Department of Material
Science Engineering, National Tsing-Hua University, Hsinchu,
Taiwan; 2Opto-Electronics & Systems Labs, Industrial
Technology Research Institute, Hsinchu, Taiwan; 3Department
of Physics, National Tsing Hua University, Hsinchu, Taiwan.
2:15 PM G3.3
Growth and Characterization of High-K Epitaxial Rutile
Films on GaN and AlGaN/GaN HFET. Venu Vaithyanathan1,
P. J. Hansen2, Y. Wu2, T. Mates2,
S. Heikman3, R. A. York3, U. K. Mishra3,
J. S. Speck2, A. R. Fisher1 and D. G.
Schlom1; 1Department of Materials Science
and Engineering, Pennsylvania State University, University Park,
Pennsylvania; 2Materials Department, University of
California, Santa Barbara, California; 3Electrical
and Computer Engineering Department, University of California,
Santa Barbara, California.
2:30 PM G3.4
HfO2 High-κ Dielectrics for GaAs Compound
Semiconductor Passivation. Pen Chang1,
Wei-Jin Lee1, Yi-Lin Huang1, Yi-Jun
Lee1,
Zhi-Kai Yang1, Minghwei Hong1 and J.
Raynien Kwo2; 1Materials Science and
Engineering, Department of Materials Science and Engineering,
National Tsing
Hua University, Hsin Chu, Taiwan; 2Physics, Department
of Physics, National Tsing Hua University, Hsin Chu, Taiwan.
2:45 PM G3.5
Ferroelectric Gates for GaN and GaAs Heterostructures and
Rewritable Nanofeatures Induced by Polarization Domains.
Igor Stolichnov, Lisa Malin and Nava Setter; Ceramics
Laboratory, Swiss Federal Institute of Technology (EPFL), Lausanne,
Switzerland.
3:00 PM BREAK
SESSION G4: Gate Dielectrics on Si
Chairs: A. Dimoulas and S. Guha
Tuesday Afternoon, March 29, 2005
Room 2007 (Moscone West)
3:30 PM *G4.1
Molecular Beam Epitaxy for Advanced Gate Stack Materials
and Processes. Jean-Pierre Locquet1, C.
Marchiori1, M. Sousa1, H. Siegwart1,
D. Caimi1, J. Fompeyrine1, L. Pantisano2,
M. Claes2, T. Conard2, M. Demand2,
W. Deweerd2, S. DeGendt2, M. Heyns2,
M. Houssa2, M. Aoulaiche2, G. Lujan2,
L. Ragnarsson2, E. Rohr2, T. Schram2,
J. Hooker3, Z. Rittersma3, Y. Furukawa3,
J. W. Seo4 and A. Dimoulas5; 1IBM,
Rueschlikon, Switzerland; 2IMEC, Leuven, Belgium;
3Philips Research Leuven, Leuven, Belgium; 4EPFL,
Lausanne, Switzerland; 5NCSR, Athens, Greece.
4:00 PM G4.2
Interface Control in MBE Grown High K Dielectrics. Chiara
Marchiori1, M. Sousa1, A. Guiller1,
J. W. Seo2, H. Siegwart1, D. Caimi1,
D. J. Webb1, C. Rossel1, R. Germann1,
J. Fompeyrine1 and J.-P. Locquet1; 1Science&Technology,
IBM Research Laboratory Zurich, Rueschlikon, Switzerland; 2IMPC,
EPFL, Lausanne, Switzerland.
4:15 PM G4.3
Epitaxial Growth of Sc2O3 and La-Based
Perovskites on Silicon by Molecular Beam Epitaxy. Lisa
Friedman Edge1, Venu Vaithyanathan1,
Darrell G. Schlom1, Dmitri O. Klenov2
and Susanne Stemmer2; 1Materials Science
and Engineering, Pennsylvania State University, University Park,
Pennsylvania; 2Materials Department, University of
California, Santa Barbara, California.
4:30 PM G4.4
The Nucleation of ALD HfO2 Films Studied by Grazing Incidence
Small Angle X-ray Scattering with Synchrotron Radiation.
Martin L. Green1, Xuefa Li2, Jin
Wang2, Andrew J. Allen1, Jan Ilavsky2,
Anneliese Delabie3 and Riikka Puurunen3;
1Materials Science and Engineering Laboratory, NIST,
Gaithersburg, Maryland; 2Argonne National Labs, Argonne,
Illinois; 3IMEC, Leuven, Belgium.
4:45 PM G4.5
Physical Characterization of HfxTiyOz
Thin Films Deposited on Si by Pulsed Injection MOCVD. Sandrine
Lhostis1, Bernard Pelissier2, Karen
Dabertrand1, Vincent Cosnier1, Jean-Pierre
Gonchond1, Marc Juhel1, Kostas Giannakopoulos3
and Guy Rolland4; 1STMicroelectronics,
Crolles, France; 2LTM, Grenoble, France; 3Electron
Microscopy Laboratory, National Center for Research Demokritos,
Agia Paraskevi (Athens), Greece; 4CEA, Grenoble,
France.
SESSION G5: Poster Session: 1
Chairs: M. Fanciulli and P. McIntyre
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
G5.1
Transferred to G8.4
G5.2
High Temperature Annealed Ga2O3(Gd2O3)/GaAs
Heterostructures. Yilin Huang1, Pen
Chang1, Zhi-Kai Yang1, Yi-Jun Lee2,
Hsin-Yi Lee3, Heng-Jui Liu3, J. Raynien
Kwo2, Joseph Petra Mannaerts1 and Minghwei
Hong1; 1Department of Materials Science
and Engineering, National Tsing Hua University, Hsinchu, Taiwan;
2Department of Physics, National Tsing Hua University,
Hsinchu, Taiwan; 3National Synchrotron Radiation
Research Center., Hsinchu, Taiwan.
G5.3
Jahn-Teller Term Splittings in Transition Metal and Rare
Earth Elemental and Complex Oxides: A Sensitive Test for
Nano-Crystallites
Below the Level of Detection by X-ray Diffraction. Lisa
Edge1, Charles Fulton2, Gerald
Lucovsky2,
Darrell Schlom1, Jon-Paul Maria2, Jan
Luning3 and Robert Nemanich2; 1Penn
State University, State College, Pennsylvania; 2NC
State Univ, Raleigh, North Carolina; 3Stanford
Synchrotron Radiation Laboratory, Menlo Park, California.
G5.4
Interfacial Study of High κ Dielectrics TiN/HfO2/Si
Gate Stack for Nano CMOS. Wei-Chin Lee1,
Chi-Hsin Chu1, Yi-Jun Lee1, KouLiang
Jaw1, Kuen-Yu Lee1, C. H. Pan2,
Ya-Ling Hsu3, Pen Chang1, Yilin Huang1,
T. Gustafsson4, E. Garfunkel4, Minghwei
Hong1 and J. Raynien Kwo3; 1Department
of Materials Science and Engineering, National Tsing Hua University,
Hsinchu, Taiwan; 2Department of Materials Electronic
and Engineering, National Tsing Hua University, Hsinchu, Taiwan;
3Department of Physics, National Tsing Hua University,
Hsinchu, Taiwan; 4Department of Physics, Rutgers
University, Piscataway, New Jersey.
G5.5
Thermochemistry of Fluorite and Pyrochlore Phases in HfO2-La2O3(Gd2O3)
Systems. Sergey V. Ushakov1, Alexandra
Navrotsky1, Jean A. Tangeman2, Katheryn
B. Helean3 and Alex Demkov4; 1Thermochemistry
Facility and NEAT ORU, University of California at Davis,
Davis, California; 2Containerless Research, Inc.,
Evanston, Illinois; 3Sandia National Laboratory,
Albuquerque, New Mexico; 4Freescale Semiconductor,
Austin, Texas.
G5.6
Size Dependent Hall Mobility in a High Germanium Content
Si0.1Ge0.9 Alloy Layer for MODFET Structure Grown by MBE.
Joo-Young Lee, H.J. Kim, Dongho Cha, Filipp Baron and
Kang L. Wang; Electrical Engineering, Device Research Laboratory,
UCLA, Los Angeles, California.
G5.7
Crystalline and Amorphous LaAlO3 Grown on Si(001) by MBE.
Sebastien Gaillard1,2, Mario Kazzi1,
Michel Gendry1, Laetitia Rapenne3, Bernard
Chenevier3 and Guy Hollinger1; 1Ecole
Centrale de Lyon - LEOM-UMR CNRS 5512, Ecully, France; 2ST
Microelectronics, Crolles, France; 3LMGP - ENSPG/INPG
- UMR CNRS 5628, St Martin d' Heres, France.
G5.8
New Tailored Precursors for the MOCVD of Group IVB Metal
Oxides: High-k Application. Reji Thomas1,
Peter Ehrhart1, Raghunandan Bhakta2,
Urmila Patil2, Anjana Devi2 and Rainer
Waser1; 1IFF-Institut for Festkorperforschung
and CNI-Center for Nanoelectronic Systems for Information
Technology, Forschungszentrum, Juelich, D52425, Germany; 2Anorganische
Chemie II, Ruhr-Universitat Bochum, Universitatsstrasse 150,
Bochum, D44780, Germany.
G5.9
Analysis of Leakage Current in Sputter-Deposited HfSiON
Films with High Hf and N Concentrations. Masahiro Koike,
Tsunehiro Ino, Yuichiro Mitani and Akira Nishiyama; Advanced
LSI Tech. Lab., Corporate R&D Center, Toshiba, Kawasaki, Japan.
G5.10
Paramagnetic Centers in Hafnium Oxide Films on Silicon.
Jason T. Ryan1, Jason P. Campbell1,
Thomas G. Pribicko1, Patrick M. Lenahan1,
John F. Conley2 and Wilman Tsai3; 1Engineering
Science, Pennsylvania State University, University Park, Pennsylvania;
2Sharp Labs, Camas, Washington; 3Intel,
Santa Clara, California.
G5.11
First Principles Based Kinetic Monte Carlo Modeling of
the HfO2 Film Roughness in an ALD Process. Inna Iskandarova1,
Elena Rykova1, Andrey Knizhnik1,
Stanislav Umanskii1, Alexander Bagatur'yants1,
Boris Potapkin1 and Mattew Stoker2;
1KINTECH Ltd, Moscow, Russian Federation; 2Freescale
Semiconductor, Tempe, Arizona.
G5.12
ABSTRACT WITHDRAWN
G5.13
Al2O3 Dielectric Thin Films Fabricated
by Single and Double Temperature Atomic Layer Deposition.
Salvador Duenas1, Helena Castan1,
Hector Garcia1, Juan Barbolla1, Kaupo
Kukli2 and Jann Aarik3; 1Electronica,
Universidad De Valladolid, Valladolid, Valladolid, Spain;
2Institute of Experimental Physics and Technology,
Tartu, Estonia; 3Institute of Physics, Tartu, Estonia.
G5.14
Design and Material Characterization of a Complimentary
Fowler-Nordheim Tunneling Transistor. Lit Ho Chong,
Kanad Mallik and C. H. De Groot; School of Electronics and
Computer Science, University of Southampton, Southampton,
United Kingdom.
G5.15
ALD Grown ZrO2/TiO2 Nanolaminate Layers for High-k Gate
Dielectric Applications. TaeKwan Oh, Daekyun Jeong
and Jiyoung Kim; Kookmin University, Seoul, South Korea.
G5.16
ABSTRACT WITHDRAWN
G5.17
Interface Oxides in Ozone-Based ALD Grown High-k Dielectric
Layers on Si. Wesley R. Nieveen1, Yoshi
Senzaki2 and Hood Chatham2; 1Evans
Analytical Group, Sunnyvale, California; 2AVIZA
Technology, Scotts Valley, California.
G5.18
Gd2O3Gate Dielectric Grown on n-Type
GaN by Pulse Electron Beam Deposition. Christian Mion
and John Muth; ECE Dept Box 7911, NC State University, Raleigh,
North Carolina.
G5.19
Thermal Desorption of Bulk Trapped Hydrogen in HfO2/Si
Structures. Vaishali Ukirde, ChangDuk Lim and Mohamed
El Bouanani; University of North Texas, Denton, Texas.
G5.20
Electrical Properties of HfO2/SiOx,
HfO2/SiO2 and HfO2/SiON
Stacks on Si as an Alternate High-k Gate Oxide Material. Reji
Thomas1, Eduard Rije2, Peter Ehrhart1,
Siegfried Mantl2 and Rainer Waser1;
1IFF-Institut for Festkorperforschung and CNI-Center
for Nanoelectronic Systems for Information Technology, Forschungszentrum,
Juelich, D52425, Germany; 2ISG-Institut for Schichten
und Grezflachen and CNI-Center for Nanoelectronic Systems
for Information Technology, Forchungszentrum, Juelich, D52425,
Germany.
G5.21
Electrical Characterization of Al2O3/HfO2
Gate Oxide About the Various Thickness of Al2O3
Deposited by Atomic Layer Deposition. Lee Sangtae1,
Kim Inhoe1, Park Myungjin1, Bae Choelhwyi2
and Jeon Hyeongtag1; 1Division of Materials
Science & Engineering, Hanyang University, Seoul, South
Korea;
2System LSI Division, Samsung Electronics, Seoul,
South Korea.
G5.22
Formation of Epitaxial Cobalt Germanide Co5Ge7 on Ge (100)
Surface by Reactive Deposition and Solid Phase Epitaxy in
in-situ Ultra-High-Vacuum TEM. Haiping Sun1,
Yan Bin Chen1, Dong Zhi Chi2, R Nath2,
Yong Lim Foo2 and Xiaoqing Pan1; 1University
of Michigan, Ann Arbor, Michigan; 2Institute of
Materials Research and Engineering, Singapore, Singapore.
G5.23
III-V Compound Epitaxial Films on Monolithic and Porous
GaAs Substrates with YSZ Sublayer. Alexander Buzynin1,
Vjatcheslav Osiko1, Yuri Voron'ko1,
Albert Luk'yanov2, Yuri Buzynin3, Boris
Volodin3, Yuri Drozdov3 and Alexey Parafin3;
1A.M. Prokhorov General Physics Institute, Russian
Academy of Sciences, Moscow, Russian Federation; 2Department
of Physics, Moscow State University, Moscow, Russian Federation;
3Institute for Physics of Microstructure, Russian
Academy of Sciences, Nizhniy Novgorod, Russian Federation.
G5.24
Influence of Post Treatment on the Electrical/Dielectric
Properties of Nanoscale Al2O3 Thin Film
Deposited by Atomic Layer Deposition. B. S. So1,
S. M. Kim1, J. H. Hwang1, Y. H. Kim1,
W. T. Cho2 and K. S. Ahn2; 1Dept.
of Materials Sci. & Eng., Hongik University, Seoul, South
Korea; 2KRICT, Daejeon, South Korea.
G5.25
On the Crystallization of High k Unary Metal Oxide Thin
Films on Silicon. Yong Gao and Kenneth A. Jackson;
Materials Science and Engineering, The University of Arizona,
Tucson, Arizona.
G5.26
Effects of the Incorporation of Nitrogen in HfO2 and
HfOxNy Films Deposited by Remote Plasma
Enhanced Atomic Layer Deposition Method. Jinwoo Kim,
Seokhoon Kim, Jihoon Choi, Hyunseok Kang and Hyeongtag Jeon;
Division of Materials Science and Engineering, Hanyang University,
Seoul, South Korea.
SESSION G6: Metal Gates and FUSI Gates-I
Chairs: M. Copel and M. Heyns
Wednesday Morning, March 30, 2005
Room 2007 (Moscone West)
8:30 AM *G6.1
ABSTRACT WITHDRAWN
9:00 AM G6.2
In-situ Characterization of Growth, Thermal Stability and
Electronic Structure of Poly-Si and FUSI Gate Electrodes on
HfO2 High-k Gate Dielectrics. Yuri Lebedinskii1,
Andrei Zenkevich1, Michael Gribelyuk2
and Evgeni Gusev3; 1Moscow Engineering
Physics Institute, Moscow, Russian Federation; 2IBM
Microelectronics Division, Hopewell Junction, New York; 3IBM
T.J. Watson Research Center, Yorktown Heights, New York.
9:15 AM G6.3
Bilayer Metal Structure for Tunable Workfunction Gate Electrodes.
Ching-Haung Lu1, Gloria Wong1,
Mike Deal1,2, Yoshio Nishi1,2, Bruce Clemens1,
Paul McIntyre1, Steven Hung3, Seongjun
Park1, Prashant Majhi5 and Wilman Tsai4;
1Materials Science and Enginnering, Stanford University,
Stanford, California; 2Electrical Engineering, Stanford
University, Stanford, California; 3Applied Materials,
Santa Clara, California; 4Intel Corporation, Santa
Clara, California; 5International Sematech, Houston,
Texas.
9:30 AM G6.4
Work Function Controllability of Al-Ni Alloy Metal Gates
Evaluated by Scanning Maxwell-Stress Microscopy. Takashi
Matsukawa, Chiaki Yasumuro, Hiromi Yamauchi, Meishoku Masahara,
Kenichi Ishii, Kazuhiko Endo, Eiichi Suzuki and Seigo Kanemaru;
Nanoelectronics Research Instisute, National Institute of Advanced
Science and Technology (AIST), Tsukuba, Ibaraki, Japan.
9:45 AM G6.5
Fabrication and Electrical Characteristics of HfNx
Metal Gate Electrode by MOCVD. Wen Wu Wang1,
Toshihide Nabatame2 and Yukihiro Shimogaki1;
1Dept. of Materials Engineering, The Univ. of Tokyo,
Tokyo, Japan; 2MIRAI-ASET, Tsukuba, Japan.
10:00 AM BREAK
SESSION G7: Transistor Processing and Characterization-I
Chairs: R. Chau and E. Gusev
Wednesday Morning, March 30, 2005
Room 2007 (Moscone West)
10:30 AM *G7.1
Integration of
Advanced Gate Dielectrics on Germanium and Strained Germanium
Channel MOSFETs. Huiling Shang1, Evgeni
Gusev1, Michael Gribelyuk2, Paul Jamison2,
Jack Chu1, John Ott1, Kathryn Guarini1
and Meikei Ieong1; 1IBM T.J. Watson Research
Center, Yorktown Heights, New York; 2IBM MD division,
Hopewell Junction, New York.
11:00 AM *G7.2
Germanium Deep-Submicron pFET and nFET Devices with Etched
TaN Metal Gate and High-K Dielectric, Fabricated on Germanium-on-Insulator
Substrates. Marc A. Meuris1, Brice De
Jaeger1, Jan Van Steenbergen1, Fabrice
Letertre, Geofrroy Raskin, Thierry Billon and Marc Heyns1;
1IMEC, Leuven, Belgium; 2Soitec, Bernin,
France; 3Umicore, Olen, Belgium; 4LETI,
Grenoble, France.
11:30 AM G7.3
A Reason for Poor Ge n-MOSFET Performance: Source/Drain Junction
Dose-Dependent Activation. Chi On Chui1,2,
Leonard Kulig1, Jean
Moran1, Wilman Tsai1 and Krishna
C. Saraswat2; 1Intel Corporation, Santa
Clara, California; 2Electrical Engineering, Stanford
University, Stanford, California.
11:45 AM G7.4
High-Mobility GaAs and GaN MOSFETs Using Atomic Layer Deposition
Al2O3 Gate Dielectrics. Glen Wilk1
and Peide Ye2; 1ASM America, Phoenix,
Arizona; 2Purdue University, West Lafayette, Indiana.
SESSION G8: Physical & Electrical Characterization-I
Chairs: P. McIntyre and K. Saraswat
Wednesday Afternoon, March 30, 2005
Room 2007 (Moscone West)
1:30 PM *G8.1
Negative Bias Temperature Instabilities in High-k Based MOSFETs.
Michel J. C. Houssa1, Marc Aoulaiche1,
Stefan De Gendt1, Guido Groeseneken1,
Marc Heyns1 and Andre Stesmans2; 1IMEC,
Leuven, Belgium; 2Department of Physics, University
of Leuven, Leuven, Belgium.
2:00 PM G8.2
Electron Spin Resonance Observation of Si/Dielectric Interface
Traps in Fully Processed Metal Gate Hafnium Oxide Field Effect
Transistors. Thomas G. Pribicko1, Jason
P. Campbell1, Patrick M. Lenahan1 and
Wilman Tsai2; 1Engineering Science, Pennsylvania
State University, University Park, Pennsylvania; 2Intel
Corporation, Santa Clara, California.
2:15 PM G8.3
Interface and Defect States at Ultrathin SiO2-HfO2-SiO2-Si
Junctions. Mykola Bataiev1, Sergey P.
Tumakha1, Yuri M. Strzhemechny1, Stephen
H. Goss1, Leonard J. Brillson1, Chris
L. Hinkle2 and Gerry Lucovsky2; 1Electrical
& Computer Engineering, Physics, and Center for Materials Research,
The Ohio State University, Columbus, Ohio; 2Physics,
North Carolina State University, Raleigh, North Carolina.
2:30 PM G8.4
High
Quality Heteroepitaxial-GE Layers on SI by Multi-Step Hydrogen
Annealing and Re-Growth. Ammar Munir Nayfeh1,
Chi On Chui1, Takao Yonehara2 and Krishna
Saraswat1; 1Department of Electrical Engineering,
Stanford University, Stanford, California; 2Leading-Edge
Technology Development Headquarters, Canon Inc., Atsugi Kanagawa,
Japan.
2:45 PM G8.5
Energy-Band Alignments and Interface Stability at ZrO2/Si,
SiGe and Ge Interfaces. S. J. Wang1, J.
W. Chai1, J. S. Pan1, Y. L. Foo1
and A. C. H. Huan1,2; 1Institute of Materials
Research & Engineering, Singapore, Singapore; 2Department
of Physics, National University of Singapore, Singapore, Singapore.
3:00 PM BREAK
SESSION G9: Modeling and Simulation
Chairs: P. McIntyre
Wednesday Afternoon, March 30, 2005
Room 2007 (Moscone West)
3:30 PM *G9.1
Electron Mobility in High-κ MOSFETs: Remote Phonon Scattering
and its Temperature and Material Dependence. Massimo
V. Fischetti1,2, Deborah A. Neumayer1,
Eduard A. Cartier1, Zhibin Ren3, Evgeni
P. Gusev1 and Michael P. Chudzik3; 1IBM
SRDC, Research Division, T. J. Watson Research, Yorktown Heights,
New York; 2Department of Electrical and Computer
Engineering, University of Massachusetts, Amherst, Massachusetts;
3IBM Microelectronics Division, Hopewell Junction,
New York.
4:00 PM G9.2
Surface States and Rectification at a Metal High-k Dielectric
Contact. Alex Demkov, Freescale Semiconductor, Inc.,
Austin, Texas.
4:15 PM G9.3
Defect Energy Levels in HfO2 and ZrO2. Ka Xiong,
Barbara Falabretti and John Robertson; Engineering, Cambridge
University, Cambridge, United Kingdom.
4:30 PM G9.4
Chemical Mechanisms for Atomic Layer Deposition of Hafnium
Nitrides and Nitrogen Incorporation into HfO2 ALD Films Using
Ammonia and Alkylamide as Precursors. Ye Xu1
and Charles B. Musgrave2,1; 1Materials
Science and Engineering, Stanford University, Stanford, California;
2Chemical Engineering, Stanford University, Stanford,
California.
4:45 PM G9.5
Dielectric Properties of Rare-Earth High-k Oxides. Pietro
Delugas, Vincenzo Fiorentini and Alessio Filippetti;
INFM-SLACS and Dept. of Physics, University of Cagliari, Monserrato,
Italy.
SESSION G10: Poster Session: II
Chairs: A. Dimoulas and J.-P Locquet
Wednesday Evening, March 30, 2005
8:00 PM
Salons 8-15 (Marriott)
G10.1
Impact of Oxygen on the Work Functions of Metal Gates on
High-k Oxides. Andrey Knizhnik1, Andrey
Safonov1, Inna Iskandarova1, Alexander
Bagatur'yants1, Boris Potapkin1 and Leonardo
Fonseca2; 1KINTECH Ltd, Moscow, Russian
Federation; 2Freescale Semiconductores Brasil Ltda,
Jaguariuna, Brazil.
G10.2
Area-Selective Atomic Layer Deposition for in-situ
Gate Stack. Rong Chen1,2, David W. Porter2,
Hyoungsub Kim3,4, Paul C. McIntyre3, Hemanth
Jagannathan4, Yoshi Nishi4 and Stacey
F. Bent2; 1Dept. of Chemistry, Stanford
University, Stanford, California; 2Dept. of Chemical
Engineering, Stanford University, Stanford, California; 3Dept.
of Materials Science and Engineering, Stanford University, Stanford,
California; 4Dept. of Electrical Engineering, Stanford
University, Stanford, California.
G10.3
TEM Characterization
of Epitaxial HfO2 Thin Films Grown on Ge by MBE. Jin Won
Seo1, C. Dieker1, A. Dimoulas2,
Jean-Pierre Locquet3, J. Fompeyrine3,
H. Siegwart3, C. Wiemer4, G. Tallarida4,
S. Ferrari4 and M. Fanciulli4; 1EPFL,
Lausanne, Switzerland; 2NCSR Demokritos, Athens;
3IBM, Rueschlikon, Switzerland; 4MDM-INFM,
Agrate Brianza Milano, Italy.
G10.4
Improved Workfunction Tunability and EOT Control with Clustered
ALD TaN/PVD Ta for Multilayer Metal Gate. Steven C. H.
Hung1, Khaled Ahmed1, Chris Olsen1,
Rongjung Wong2, Fred Wu2, Nety Krishna2,
Gary Miner1, Ching Huang Lu3, Michael
Deal3 and Yoshio Nishi3; 1ADC/Front
End, Applied Materials, Sunnyvale, California; 2CPI,
Applied Materials, Sunnyvale, California; 3Electrical
Engineering, Stanford University, Stanford, California.
G10.5
Nitrided Hafnium Silicates for Gate Dielectrics. Changgong
Wang1, Mohith Verghese1, Eric Shero1,
Glen Wilk1, Jan Willem Maes1, Wim Deweerd2
and Annelies Delabie2; 1ASM America, Phoenix,
Arizona; 2IMEC, Leuven, Belgium.
G10.6
The Perfect Interface: Ge/SiO2. Gerd Duscher1,2,
Sergei Lopatin3, Tao Liang4 and Wolfgang
Windl4; 1Materials Science & Engineering,
North Carolina State University, Raleigh, North Carolina; 2Condensed
Matter Science Division, Oak Ridge National Laboratory, Raleigh,
Tennessee; 3NCEM, Lawrence Berkeley National Laboratory,
Berkeley, California; 4Materials Science & Engineering,
The Ohio State University, Columbus, Ohio.
G10.7
The Study on Growth Kinetics of Hf-Silicate Films on Si (100)
Grown by Atomic Layer Deposition Using in-situ Medium Energy
Ion Scattering. Kwun Bum Chung1,2, Mann-Ho
Cho2, Dae Won Moon2 and Chung Nam Whang1;
1Institute of Physics and Applied Physics, Yonsei
University, Seoul, South Korea; 2Nano Surface Group,
Korea Research Institute of Standards and Science, Daejeon,
South Korea.
G10.8
Work Function Engineering of Fully Silicided NiSi Metal Gate
Through Pt Addition. Rinus Tek Po Lee, Siao Li Liew, Weide
Wang, Hai Biao Yao, Emily Kwee Choo Chua, Shue Yin Chow, Doreen
Mei Ying Lai and Dongzhi Chi; Institute of Materials
Research and Engineering, Singapore, Singapore.
G10.9
The Impact of Interface Structure on Schottky-Barrier Height
for Metal-Gate/High-k Interfaces. Ach Huan1,2,
Y. F. Dong2, Q. Li2, Y. P. Feng2
and S. J. Wang1; 1Institute of Materials
Research & Engineering, Singapore, Singapore; 2Department
of Physics, National University of Singapore, Singapore, Singapore.
G10.10
Investigation of Magnetic Properties of r.f. Sputtered Hafnium
Oxide Layers. Heinrich Grueger1, Christian
Kunath1, Eberhard Kurth1, M. Venkatesan2,
L. S. Dorneles2 and Michael Coey2; 1Sensors
Division, Fraunhofer IPMS, Dresden, Germany; 2Physics
Department, Trinity College, Dublin, Ireland.
G10.11
Dielectric Properties of High-Pressure Reactive Sputtered
and Atomic Layer Deposited Titanium Oxide Thin Films on Silicon.
Salvador Duenas1, Helena Castan1,
Hector Garcia1, Juan Barbolla1, Enrique
San Andres2, Ignacio Martil2, German Gonzalez-Diaz2,
Kaupo Kukli3 and Jaan Aarik4; 1Electronica,
Universidad De Valladolid, Valladolid, Valladolid, Spain; 2Fisica
Aplicada III, Universidad Complutense, Madrid, Spain; 3Institute
of Experimental Physics and Technology, University of Tartu,
Tartu, Estonia; 4Institute of Physics, University
of Tartu, Tartu, Estonia.
G10.12
Gate Technologies for Gallium Nitride in High-Frequency MOSFETs.
Mark Johnson1, Doug Barlage2 and
Dave Braddock3; 1Materials Science and
Engineering, NC State University, Raleigh, North Carolina; 2Electrical
and Computer Engineering, NC State University, Raleigh, North
Carolina; 3OSEMI Inc, Raochester, Minnesota.
G10.13
Reliability Characteristics of HfO2 Gate Dielectrics
Prepared by Atomic Layer Deposition Using HfCl4 and
TEMAH. Taeho Lee1, Hankyong Ko1,
In-Sung Park1, Jinho Ahn1 and Jaehak Jung2;
1Materials Science & Engineering, Hanyang Universtity,
Seoul, South Korea; 2Evertek, Kyunggi-Do, South Korea.
G10.14
ABSTRACT WITHDRAWN
G10.15
Work Function of Layered Refractory Metal Electrodes in Metal
Oxide Semiconductor Structures. Gloria M. T. Wong1,
Ching-Huang Lu1, Michael Deal2, Yoshio
Nishi2 and Bruce M. Clemens1; 1Department
of Materials Science and Engineering, Stanford University, Stanford,
California; 2Department of Electrical Engineering,
Stanford University, Stanford, California.
G10.16
Ge Nanocrystal Metal-Oxide-Semiconductor Memory with LaAlO3
Tunneling Oxide. Lu Xubing, P. F. Lee, J. Y. Dai,
H. L. W. Chan and C. L. Choy; Department of Applied Physics,,
The Hong Kong Polytechnic University, Hong Kong, China.
G10.17
Precise Characterization of Silicon on Insulator (SGOI),
SiGe on SOI and Strained Silicon on SiGe on Insulator (SSOI)
Stacks with UV-Visible and Infra Red Spectroscopic Ellipsometry.
Adrien Darragon, Jean Louis Stehle and Christophe Defranoux;
SOPRA, Bois-colombes, France.
G10.18
Phase Transformation of HfO2 Thin Films Grown by Liquid Pulsed
MOCVD. Karen Dabertrand1, Andy Zauner2,
Christopher Hobbs3, Sandrine Lhostis1,
Guy Rolland4, Olivier Renault4, Frederic
Laugier4, Philippe Holliger4, Helmut Metzger5,
Cristian Mocuta5, Simone Pokrant2, Denise
Muyard4, Konstantinos Giannakopoulos6
and Vincent Cosnier1; 1STMicroelectronics,
Crolles Cedex, France; 2Philips, Crolles Cedex, France;
3Freescale, Crolles Cedex, France; 4DRT/D2NT,
CEA-LETI, Grenoble Cedex, France; 5ESRF, Grenoble
Cedex, France; 6Electron Microscopy Laboratory, Athens,
Greece.
G10.19
DFT Evaluation of Band Offsets of Silicon Oxynitride Interfaces.
Maria Merlyne De Souza and Athanasios Stefanou; Emerging
Technologies Research Centre, De Montfort University, Leicester,
United Kingdom.
G10.20
Probing Local Atomic Environments in High-k Gate Stacks on
the Nanometre Scale. Maureen MacKenzie2, Frances
T. Docherty2, Alan J. Craven2 and David
W. McComb1; 1Materials, Imperial College
London, London, United Kingdom; 2Physics and Astronomy,
University of Glasgow, Glasgow, United Kingdom.
G10.21
Optimization and Integration of a Long Pulse Laser Thermal
Process for Ultra-Shallow Junction Formation of CMOS Device.
Julien Venturini1, Miguel Hernandez1,
Cyrille Laviron2, Hassan Akhouayri3 and
Jacques Boulmer4; 1SOPRA, Bois-Colombes,
France; 2CEA-G/LETI, Grenoble, France; 3Institut
Fresnel, Marseille, France; 4IEF, Orsay, France.
G10.22
Effect of Process Parameters on the Structural and Electrical
Properties of Barium Strontium Titanate Thin Films Grown by
LS-MOCVD. Young Kuk Lee, Taek-Mo Chung, Chang Gyoun
Kim and Yunsoo Kim; Thin Film Materials Laboratory, Korea Research
Institute of Chemical Technology, Taejon, South Korea.
G10.23
Study of Dielectric Titanium Dioxide Thin Film Deposited
by Plasma-Enhanced Atomic Layer Deposition. Guoxia Liu1,2,
Fukai Shan2, Won-Jae Lee1,2, G. H. Lee1,2,
I. S. Kim1,2 and B. C. Shin1,2; 1Department
of Information Engineering, DongEui University, Busan, South
Korea; 2Electronic Ceramics Center, DongEui University,
Busan, South Korea.
G10.24
Amorphous ABO3 on Si. Fude Liu1, Lisa
F. Edge2, Darrell G. Schlom2 and Gerd
Duscher1,3; 1Department of Materials Science
and Engineering, North Carolina State University, Raleigh, North
Carolina; 2Department of Materials Science and Engineering,
Penn State University, University Park, Pennsylvania; 3Condensed
Matter Division, Oak Ridge National Lab, Oak, Ridge, Tennessee.
G10.25
Perowskite Based Alloyed Thin Films with High k as
Alternative Gate Oxides for Microelectronic Applications.
Juergen Schubert, Tassilo Heeg and Martin Wagner; ISG
1-IT, Forschungszentrum Juelich GmbH, Juelich, Germany.
G10.26
Characterization of Zr Incorporating Gd2O3 Film. S.
A. Park1, Y. K. Kim1, J. H. Baeck1,
I. S. Jeong1, M. K. Noh1, K. Jeong1
and M.-H. Cho2; 1Department of Physics,
Yonsei University, Seoul, South Korea; 2Korea Research
Institute of Standards and Science, Daejeon, South Korea.
SESSION G11: Gate Dielectrics on Engineered Substrates
Chairs: E. Fitzgerald and M. Orlowski
Thursday Morning, March 31, 2005
Room 2007 (Moscone West)
8:30 AM *G11.1
High Current Drivability MOSFET Fabricated on Si(110) Surface.
Akinobu Teramoto and Tadahiro Ohmi; New Industry Creation
Hatchery Center, Tohoku University, Sendai, Japan.
9:00 AM *G11.2
Advanced High-Mobility Semiconductor-On-Insulator Materials.
Bruno Ghyselen, Ian Cayrefourcq, Fabrice Letertre, Takeshi
Akatsu, George Celler and Carlos Mazure; SOITEC, Bernin, France.
9:30 AM G11.3
Surface Orientation Dependence of Inversion Carrier Mobilities
in HfAlOx CMOS Fabricated on (100), (110) and (111) Si Substrates.
Hiroyuki Ota1, Kenji Okada2, Hideki
Satake2 and Akira Toriumi1,3; 1MIRAI-ASRC,
AIST, Tsukuba, Ibaraki, Japan; 2MIRAI-ASET, Tsukuba,
Ibaraki, Japan; 3The Univ. of Tokyo, Bunkyo-ku, Tokyo,
Japan.
9:45 AM G11.4
Interdiffusion Studies Under Oxidative Conditions in Si-Ge
Heterostructures. Nevran Ozguven and Paul C. McIntyre;
Materials Science and Engineering, Stanford University, Stanford,
California.
10:00 AM BREAK
SESSION G12: Physical & Electrical Characterization-II
Chairs: M. Houssa and S. Takagi
Thursday Morning, March 31, 2005
Room 2007 (Moscone West)
10:30 AM *G12.1
High Dielectric Constant Oxide Stacks on Germanium for CMOS:
Materials Challenges. Supratik Guha1,
James Chen2, Sanjay Banerjee2, Edward
Preisler5, Nestor Bojarczuk1, Michael
Gribelyuk3, Alex Zaslavsky4, B. R. Perkins4
and D. Kazazis4; 1IBM T. J. Watson Research
Center, Yorktown Heights, New York; 2Electrical Engineering,
University of Texas at Austin, Austin, Texas; 3IBM
Microelectronics Division, East Fishkill, New York; 4Electrical
Engineering, Brown University, Providence, Rhode Island; 5Jazz
Semiconductor, Newport Beach, California.
11:00 AM *G12.2
Atomic Layer Deposition of High-k Dielectrics on Ge and GaAs.
Marco Fanciulli, Laboratorio Nazionale MDM, Istituto
Nazionale per la Fisica della Materia, Agrate Brianza, Italy.
11:30 AM G12.3
Soft X-ray Photoemission Studies of HfO2 on Ge (001).
Kang-ill Seo1, Shiyu Sun2,3, Dong-Ick
Lee1,3, Piero Pianetta3, Krishna C. Saraswat4
and Paul C. McIntyre1; 1Materials Sci.ence
and Engineering, Stanford University, Stanford, California;
2Physics, Stanford University, Stanford, California;
3Stanford Synchrotron Radiation Laboratory, Stanford
University, Stanford, California; 4Electrical Engineering,
Stanford University, Stanford, California.
11:45 AM G12.4
Characterization
of MBE Growh HfO2 Films on Ge(001). Claudia
Wiemer1, Grazia Tallarida1, Sandro
Ferrari1, Marco Fanciulli1, Sascha Kremmer2,
Christian Teichert2, Jin Won Seo4, Christel
Dieker4 and Athanasios Dimoulas3; 1MDM-INFM,
Agrate Brianza, Mi, Italy; 2Institute of Physics,
University of Leoben, Leoben, Austria; 3MBE Laboratory,
NCSR, Paraskevi Attikis, Greece; 4Institute of Physics
of Complex Matters, EPFL, Lausanne, Switzerland.
SESSION G13: Metal Gates and FUSI Gates-II
Chairs: E. Gusev and H. Shang
Thursday Afternoon, March 31, 2005
Room 2007 (Moscone West)
1:30 PM *G13.1
Gate Work Function and Fermi Level Pinning on HfO2 Dielectrics.
John Robertson and Ka Xiong; Engineering, Cambridge University,
Cambridge, United Kingdom.
2:00 PM G13.2
Gate Metal/HfO2 Interactions in MOSFET Stacks:
Dissolved Oxygen and Other Pitfalls. Matthew Copel,
E. J. Preisler, R. Pezzi, N. A. Bojarczuk, M. C. Reuter, E.
Gusev, S. Guha and F. R. McFeely; IBM, Yorktown Hts, New York.
2:15 PM G13.3
Fermi-Level Pinning of Fully Silicide Gate Electrode on Hf-Silicate
Gate Insulator. Kazuaki Nakajima, Seiji Inumiya,
Akio Kaneko, Soichi Yamazaki, Kazuhiro Eguchi and Yoshitaka
Tsunashima; Toshiba Corporation, Semiconductor Company, Yokohama,
Japan.
2:30 PM G13.4
Intermixing in NiSi/HfO2/SiOx/Si Gate Stacks. Michael
Gribelyuk3,1, Cyril Cabral2,1, Nestor
Bojarczuk2,1, Supratik Guha2,1, Evgeni
Gusev2,1 and Vijay Narayanan2,1; 1Semiconductor
Research and Development Center, IBM, Hopewell Junction, New
York; 2Research Division, T. J. Watson Research Center,
IBM, Yorktwon, New York; 3Systems and Technology
Group, IBM, Hopewell Junction, New York.
2:45 PM G13.5
Combinatorial Study of Metal Gate Compatibility on HfO2.
Martin L. Green1, Kao-Shuo Chang2,
Toyohiro Chikyow4, Ahmed Parhat4, John
Suehle1, Eric Vogel1, Prashant Majhi3
and Ichiro Takeuchi2; 1NIST, Gaithersburg,
Maryland; 2University of Maryland, College Park,
Maryland; 3Sematech, Austin, Texas; 4NIMS,
Tsukuba, Japan.
3:00 PM BREAK
SESSION G14: Transistor Processing and Characterization-II
Chairs: M. Heyns and M. Meuris
Thursday Afternoon, March 31, 2005
Room 2007 (Moscone West)
3:30 PM *G14.1
Ge
Based High Performance Nanoscale MOSFETs. Krishna C.
Saraswat1, Chi On Chui1, Tejas Krishnamohan1,
Ammar Nayfeh1 and Paul McIntyre2; 1Department
of Electrical Engineering, Stanford University, Stanford, California;
2Department of Materials Science and Engineering,
Stanford University, Stanford, California.
4:00 PM G14.2
MOSFET with La2HfO7 and HfO2
High-k Dielectrics Integrated in a Conventional Flow. Luigi
Pantisano1, Thierry Conard1, Martine
Claes1, M. Demand1, Wim Deweerd1,
Stefan Degendt1, Marc Heyns1, Michel Houssa1,
Marc Aoulaiche1, Guilherme Lujan1, Lara-Ake.
Ragnarsson1, Erika Rohr1, Tom Schram1,
J. C. Hooker2, Z. M. Rittersma2, Jean
Fompereyne3, Jean Pierre Locquet3 and
A. Dimoulas4; 1SPDT / Hirel, IMEC, Leuven,
Belgium; 2Philips Research Leuven, Leuven, Belgium;
3IBM Research, Ruschlikon, Switzerland; 4NCSR
"Demokritos", Athens, Greece.
4:15 PM G14.3
Strained Silicon MOSFETs with Hafnium Dioxide Gate Dielectrics
and Metal Gate Electrodes. Yanxia Lin, Veena Misra
and Mehmet Ozturk; Dept. of Electrical and Computer Engineering,
North Carolina State University, Raleigh, North Carolina.
4:30 PM G14.4
Physical Properties of Thin Nitrided Hf Silicates and Their
Impact on the Performance of Advanced Transistors Having a TaN
Metal Gate Electrode. Florence Cubaynes1, Cees
van der marel2, Marco Hopstaken2, Sven
van Elshocht3, Jean-Luc Everaert3 and
Marc Schaekers3; 1Philips Research,
Leuven, Belgium; 2Philips Research, Eindhoven, Netherlands;
3IMEC, Leuven, Belgium.
4:45 PM G14.5
Molybdenum-Gate MOSFET Threshold Voltage Modification Based
on Two-Dimensional Nitrogen Distribution Control in Gate Electrode.
Takuji Hosoi, Masaki Hino, Kousuke Sano, Norihiro Ooishi
and Kentaro Shibahara; Research Center for Nanodevices and Systems,
Hiroshima University, Higashi-Hiroshima, Japan.
Symposium Organizers
A. Dimoulas
NCSR “DEMOKRITOS”
Institute of Materials Science, 153 10
Ag. Paraskevi, Athens
Greece
Tel: 30-210-650-3340
Fax: 30-210-651-9430, dimoulas@ims.demokritos.gr |
E. Gusev
IBM T. J. Watson Research Center
P.O. Box 218
Yorktown Heights, NY 10598
Tel: 914-945-1168
Fax: 914-945-2141
gusev@us.ibm.com |
P. McIntyre
Stanford University
Dept. of Materials Science & Engineering
476 Lomita Mall
Stanford, CA 94305-4045
Tel: 650-725-9806
Fax: 650-725-4034
pcm1@stanford.edu |
M. Heyns
IMEC vzw
Silicon Process & Device Technology Division
Kapeldreef 75
Leuven, Belgium
Tel: 32-16-281-348
Fax: 32-16-229-400
heyns@imec.be |
S. Takagi
University of Tokyo
School of Engineering
Electronic Engineering Dept.
7-3-1 Hongo
Bunkyo-ku
Tokyo 113-8656, Japan
Tel: 81-3-5841-7467
Fax: 81-3-5841-6702
takagi@ee.t.u-tokyo.ac.jp |
M. Orlowski
Motorola
Advanced Products Research Laboratory
Austin, TX 78721
Tel: 512-933-5020
Fax: 512-933-5304
m.orlowski@freescale.com |
|
