Chairs
| S. Ashok |
|
The Pennsylvania State University |
| J. Chevallier |
|
CNRS |
| B. L. Sopori |
|
National Renewable Energy Laboratory |
| M. Tabe |
|
Shizuoka University |
| P. Kiesel |
|
Palo Alto Research Center |
Symposium Support
Eastman
Kodak Co., Kodak Research Labs
Freescale Semiconductor, Inc.
*HORIBA Jobin Yvon Inc.
Intel Corp.
JEOL SA
National Renewable Energy Laboratory (NREL)
Palo Alto Research Center (PARC)
SAIREM
Soitec Picogiga
Thales Research and Technology France
Unisoku Co., Ltd.
*Spring Exhibitor
Proceedings
to be published in
both book form and online
(see ONLINE PUBLICATIONS at www.mrs.org)
as volume 864
of the Materials Research Society
Symposium Proceedings Series.
* Invited paper
TUTORIAL
Semiconductor Heterojunctions--Properties and Photoelectronic Characterization
Monday March 28, 2005
1:30 PM - 5:00 PM
Room 2006 (Moscone West)
This tutorial will cover basic concepts of semiconductor heterostructures and heterojunctions that make them suitable for a wide variety of electronic and optoelectronic applications. A broad range of material system, with special emphasis on III-V alloys, will be used as examples to electrical and photoelectronic characterization. A brief introduction to various methods of preparation, and a review a modern techniques to modify the properties of heterojunction will also be included. The recent emergence of organic semiconductor heterostructures in applications such as organic light emitting diodes will be discussed in order to carry out a critical comparison with conventional inorganic semiconductor heterostructures.
Instructor:
Yashowanta N. Mohapatra, Indian Institute of Technology, Kanpur
SESSION E1:Dopant/Defect Issues in Wide Bandgap Semiconductors
Chairs: J. Chevallier and Kin.Man Yu
Tuesday Morning, March 29, 2005
Room 2006 (Moscone West)
NOTE EARLY START 8:00 AM *E1.1
Doping Strategies and Doping Rules in Difficult-to-Dope Semiconductors. Alex Zunger, National Renewable Energy Laboratory, Golden, Colorado.
8:30 AM *E1.2
Grown-in and Radiation-Induced Defects in SiC. Thomas
Eberlein1, Robert Jones1, Patrick
Briddon2 and Sven Oberg3; 1School
of Physics, University of Exeter, Exeter, United Kingdom; 2School
of Natural Sciences, University of Newcastle upon Tyne,
Newcastle upon Tyne, United Kingdom; 3Department
of Mathematics, Luleaa University of Technology, Luleaa,
Sweden.
9:00 AM E1.3
Defect Studies in Wide Bandgap Semiconductors Such
as Vanadium Doped 4H-SiC Using Optical Admittance Spectroscopy. Wonwoo Lee1 and Mary E. Zvanut2; 1Materials Science, University of Alabama at Birmingham, Birmingham, Alabama; 2Physics, University of Alabama at Birmingham, Birmingham, Alabama.
9:15 AM E1.4
Important Grown-in Defects in Novel Dilute Nitride (Al,In)GaNP: Ga Interstitials. N. Q. Thinh1, I. P. Vorona1, I. A. Buyanova1, Weimin M. Chen1, Sukit Limpijumnong2, S. B. Zhang3, Y. G. Hong4, H. P. Xin4, C. W. Tu4, A. Utsumi5, Y. Furukawa5, S. Moon5, A. Wakahara5 and H. Yonezu5; 1Dept of Physics and Measurement technology, Linkoping University, Linkoping, Sweden; 2School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, Thailand; 3National Renewable Energy Laboratory, Golden, Colorado; 4Dept of Electrical and Computer Engineering, University of California, La Jolla, California; 5Dept of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan.
9:30 AM E1.5
Role of the Substrate Doping in the Activation of
Fe2+ Centers in Fe Implanted InP. Tiziana
Cesca1, Andrea Gasparotto1,
Adriano Verna1, Beatrice Fraboni2,
Giuliana Impellizzeri3 and Francesco Priolo3; 1Physics
Department, INFM and University of Padova, Padova, PD,
Italy; 2Physics Department, INFM and University
of Bologna, Bologna, BO, Italy; 3Physics and
Astronomy Department, INFM and University of Catania,
Catania, CT, Italy.
9:45 AM E1.6
Electrical Activity of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates. Pierre Galtier1, Jean-Francois Rommeluere1, Jaime Mimila-Arroyo2, Michel Barbe1, Francois Jomard1 and Yves Marfaing1; 1Laboratoire de Physique des Solides et de Cristallogenese, CNRS UMR 8635, Meudon, France; 2CINVESTAV, IPN, Mexico, Mexico.
10:00 AM E1.7
The Role of Oxygen Interstitial Defects in Zinc Oxide. Paul Erhart, Karsten Albe and Andreas Klein; Institut fuer Materialwissenschaft, TU Darmstadt, Darmstadt, Germany.
10:15 AM BREAK
SESSION E2:Dopant/Defects in Silicon Technology
Chairs: J. Chevallier and Kin.Man Yu
Tuesday Morning, March 29, 2005
Room 2006 (Moscone West)
10:45 AM *E2.1
Effects of Impurity Incorporation in Ni on Silicidation/
Germanosilicidation Reactions and Structural/Electrical
Properties of NiSi/NiSi(Ge). Dongzhi Chi,
R. T. P. Lee, Haibiao Yao and Soojin Chua; Institute
of Materials Research & Engineering, Singapore, Singapore.
11:15 AM E2.2
Co-Doping Concepts for p-Type Silicon. Paola
Alippi1 and Giorgia M. Lopez2; 1CNR-IMM,
Catania, Italy; 2INFM-SLACS and Dept. of Physics,
University of Cagliari, Monserrato, Italy.
11:30 AM E2.3
Study of the Pt-O Complex Formation in Platinum Doped Silicon. Wilfried Vervisch1,2,3, Laurent Ventura1, Bernard Pichaud2, Gerard Ducreux3 and Andre Lhorte3; 1LMP, Universite de Tours, Tours, France; 2TECSEN, Universite Aix-Marseille III, Marseille, France; 3STMicroelectronics, Tours, France.
11:45 AM E2.4
New Additions to the Menagerie of Defects in Silicon. Gerd Duscher1,2, Alexander Kvit3, Donovan Leonard1, Abdennaceur Karoui1 and Nathan G. Stoddard1; 1Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina; 2Condensed Matter Science Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee; 3Department of Materials Science, University of Wisconsin, Madison, Wisconsin.
SESSION E3:Interfaces and Strain-Induced Defects
Chairs: T. Tsuchia and W. S. Lau
Tuesday Afternoon, March 29, 2005
Room 2006 (Moscone West)
1:30 PM *E3.1
Experimental Observation of Formation Processes in Si/SiO2 Interface
Defects Using in-situ UHV-ESR System. Satoshi Yamasaki1,2, W. Futako1 and Norikazu Mizuochi3,1; 1AIST, Diamond Research Center, Tsukuba, Japan; 2Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Japan; 3Institute of Library and Information Science, University of Tsukuba, Tsukuba, Japan.
2:00 PM E3.2
Efficient Quantitative Detection of Oxygen Vacancy Double Donors in Capacitors with Ultra-Thin Tantalum Oxide Films for DRAM Applications by Zero-Bias Thermally Stimulated Current Spectroscopy. Wai-Shing Lau1, Lianbin Zhong1, Taejoon Han2 and Nathan P. Sandler2; 1School of EEE, Nanyang Technological University, Singapore, Singapore; 2Lam Research Corporation, Fremont, California.
2:15 PM E3.3
An Investigation on the Band Offsets of GaNAsSb/GaAs and GaInNAsSb/GaAs. Homan B. Yuen1, Robert Kudrawiec2, Krzysztof Ryczko2, Seth R. Bank1, Mark A. Wistey1, Hopil Bae1, Jan Misiewicz2 and James S. Harris1; 1Solid State & Photonics Laboratory, Stanford University, Stanford, California; 2Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland.
2:30 PM *E3.4
Direct Measurements of Trap Density in a SiGe/Si Hetero Interface by New Charge-Pumping Technique. Toshiaki Tsuchiya1, Masao Sakuraba2 and Junichi Murota2; 1Shimane University, Matsue, Japan; 2Tohoku University, Sendai, Japan.
3:00 PM BREAK
3:30 PM E3.5
Ultra-Shallow Junctions for the 65nm Node Based on Defect and Stress Engineering. Victor Moroz1, Majeed Foad2, Houda Graui2, Faran
Nouri2, Dipu Pramanik1, and Susan
Felch2; 1Synopsys, Inc, Mountain View, California; 2Applied Materials, Sunnyvale, California.
3:45 PM E3.6
High Quality Strained-Si Growing Techniques. Young-Pil Kim, Sun-Ghil Lee, Young-Eun Lee, Jong-Wook Lee, In-Soo Jung, Sung-Kwan Kang, Deok-Hyung Lee, Yong-Hoon Son, Pil-Kyu Kang, Min-Ku Kang, Yu-Gyun Shin, U-In Chung and Joo-Tae Moon; Process Development Team, Samsung Electronics, Yongin-City, Gyeonggi-Do, South Korea.
4:00 PM E3.7
N+/P and P+/N Junctions in Strained Si on Thin Strain
Relaxed SiGe Buffers: The Effect of Defect Density and
Layer Structure. Geert Eneman1,3,4, Eddy Simoen1, Romain Delhougne1,3, Peter Verheyen1, Michael Ries2, Roger Loo1, Matty Caymax1, Wilfried Vandervorst1,3 and Kristin De Meyer1,3; 1Imec, Heverlee, Belgium; 2MEMC, St. Peters, Missouri; 3ESAT, K.U. Leuven, Leuven, Belgium; 4F.W.O., Brussels, Belgium.
4:15 PM E3.8
Morphology, Defects and Thermal Stability of SiGe
Grown on SOI. Qianghua Xie1, Mike
Kottke1, Xiangdong Wang1, Mike
Canonico1, Ted White2, Bich-Yen
Nguyen2, Alex Barr3, Shawn Thomas4 and
Ran Liu5; 1Physical
Analysis Laboratory Arizona, Freescale Semiconductor
Inc., Tempe, Arizona; 2Advanced Process
Research and Development Laboratory, Freescale Semiconductor
Inc., Austin, Texas; 3Crolles-2,
Freescale Semiconductor, Crolles,
France; 4Embedded Systems and Science Research
Laboratory, Motorola Inc., Tempe, Arizona; 5School
of Micro-electronics, Fudan University, Shanghai, China.
4:30 PM E3.9
Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy. Dalaver Hussain Anjum3,1, Robert Hull1, Jian Li1, Judy L. Hoyt2 and Guangrui Xia2; 1Materials Science & Engineering, University of Virginia, Charlottesville, Virginia; 2Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts; 3The Burnham Institute, La Jolla, California.
4:45 PM E3.10
The Defect Formation and Strain Relaxation in GaAsSb/GaAs
Heteroepitaxy. Benny Perez Rodriguez1 and
Joanna Mirecki Millunchick2; 1Applied
Physics, University of Michigan, Ann Arbor, Michigan; 2Materials
Science and Engineering, University of Michigan, Ann
Arbor, Michigan.
SESSION E4: Poster Session I
Chairs: Peter Kiesel and B.L. Sopori
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
E4.1
Chromium Diffusion Doping of Commercial ZnSe and CdTe Windows for Mid-Infrared Solid-State Laser Applications. Ivy K. Jones1, Uwe Hommerich1, EiEi Nyein1 and Sudhir Trivedi2; 1Dept. of Physics, Hampton University, Hampton, Virginia; 2Brimrose Corporation, Baltimore, Maryland.
E4.2
GaN Films Grown on (11-20) Sapphire Substrates Under Various
V/III Ratios. Wei-Tsai Liao1, Jyh-Rong
Gong2, Yu-Li Tsai1, Cheng-Liang Wang1,
Keh-Chang Chen1 and Tai-Yuan Lin3; 1Department
of Materials Science and Engineering, Feng Chia University,
Taichung, Taiwan; 2Institute of Opto-Mechatronics,
National Chung Cheng University, Chiayi, Taiwan; 3Institute
of Optoelectronic Sciences, National Taiwan Ocean University,
Keelung, Taiwan.
E4.3
Characteristics of GaN Films Grown on Wet-Etched GaN. Yu-Li Tsai1, Jyh-Rong Gong2, Kun-Ming Lin1, Wei-Tsai Liao1, Cheng-Liang Wang1 and Tai-Yuan Lin3; 1Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan; 2Institute of Opto-Mechatronics, National Chung Cheng University, Chiayi, Taiwan; 3Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan.
E4.4
On the Properties of GaN Films Grown on (111) Si Substrates
Using Intermediate Temperature AlGaN Buffer Layers. Cheng-Liang
Wang1, Jyh-Rong Gong2, Chung-Kwei
Lin1, Wei-Tsai Liao1, Yu-Li Tsai1 and
Tai-Yuan Lin3; 1Department of Materials
Science and Engineering, Feng Chia University, Taichung, Taiwan; 2Institute
of Opto-Mechatronics, National Chung Cheng University, Chiayi,
Taiwan; 3Institute of Optoelectronic Sciences, National
Taiwan Ocean University, Keelung, Taiwan.
E4.5
Ferromagnetism in the Diluted Magnetic Semiconductor Phase
of ZnO:Co. Marco Aurelio Boselli1, Ivan C.
da Cunha Lima2 and A. Ghazali3; 1Departamento
de Fisica, Universidade Federal de Ouro Preto, Ouro Preto,
MG, Brazil; 2Instituto de Fisica, Universidade do
Estado do Rio de Janeiro, Rio de Janeiro, RJ, Brazil; 3Groupe
de Physique des Solides, UMR 7588-CNRS, Universites Paris 6
et Paris 7, Paris, France.
E4.6
Electricflly Active Defects of GaAs Films on Porous GaAs
Substrates and Gettering. Alexander Buzynin1,
Yuri Buzynin2, Alexander Belyaev2, Eduard
Rau3 and Albert Lukyanov3; 1General
Physics Institute, Russian Academy of Sciences, Moscow, Russian
Federation; 2Institute for Physics of Microstructures,
Russian Academy of Sciences, Nizhny Novgorod, Russian Federation; 3Physical
Department, Moscow State University, Moscow, Russian Federation.
E4.7
A Method for Finding Potential N-Type and P-Type Impurities
for Wide Band-Gap Materials Such as Diamond. Adrian
E. Mendez and Mark A. Prelas; Nuclear Science and Engineering
Institute, University of Missouri-Columbia, Columbia, Missouri.
E4.8
Structural Characterization of GaN Epilayers Grown on PSS(Patterned Sapphire Substrate). Chang-Soo Kim1, Sang-Jun Lee1, Sam-Kyu Noh1, Kyuhan Lee2, Je Won Kim2, Ji-Hyun Moon3, Byung-Sung O3 and Jay P. Song4; 1National Research Laboratory, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, South Korea; 2Photonic Device Group, Samsung Electro-Mechanics, Suwon, South Korea; 3Department of Physics, Chungnam National University, Taejon, South Korea; 4SongJee Industrial Corporation, Sungnam, South Korea.
E4.9
Defect Modification in GaInNAsSb Growth with Insertion of
GaAs Prelayers. Seth Bank, Mark Wistey, Homan Yuen,
Hopil Bae, Lynford Goddard and James S. Harris; Solid State
and Photonics Laboratory, Stanford University, Stanford, California.
E4.10
Structural Properties of Thin Oxide Films (ZnO and SnOx)
Deposited on Glass and Silicon Substrates. Serekbol
Zharylgap-uly Tokmoldin, Bulat N. Mukashev, Nurjan B. Beisenkhanov,
Azamat B. Aimagambetov and Irina V. Ovcharenko; Solid State
Physics, Institute of Physics and Technology, Almaty, Kazakhstan.
E4.11
Charge Transport Properties in AlOx Capped ZnO Thin Films by Scanning Probe Microscopy. Jin An1,2, K. C. Hui3,2, K. Xue1,2, Daniel H. C. Ong3,2 and J. B. Xu1,2; 1Electronic Engineering, Chinese University of Hong Kong, Hong Kong, Hong Kong; 2Materials Science and Technology Research Center, Chinese University of Hong Kong, Hong Kong, Hong Kong; 3Dept. of Phsyics, Chinese University of Hong Kong, Hong Kong, Hong Kong.
E4.12
RHEED Oscillation Study of GaAs(331)B Surface. Vahid R. Yazdanpanah, Z H. M. Wang, S. H. Seydmohamadi and Greg Salamo; Physics, University of Arkansas, Fayetteville, Arkansas.
E4.13
Structural and Electrical Characterization of Fe Implanted
GaInP: Interaction of Fe with Ion Induced Defects and Deep
Trap Activation. Tiziana Cesca1, Andrea Gasparotto1, Adriano Verna1, Beatrice Fraboni2, Giuliana Impellizzeri3, Francesco Priolo3, Luciano Tarricone4 and Massimo Longo4; 1Physics Department, INFM and University of Padova, Padova, PD, Italy; 2Physics Department, INFM and University of Bologna, Bologna, BO, Italy; 3Physics and Astronomy Department, INFM and University of Catania, Catania, CT, Italy; 4Physics Department, INFM and University of Parma, Parma, PR, Italy.
E4.14
Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC. Dmitri N. Zakharov1, Zuzanna Liliental-Weber1, Brian Wagner2, Zach Reitmeier2, Edward Preble2 and Robert Davis2; 1Lawrence Berkeley National Laboratory, Berkeley, California; 2North Carolina State University, Raleigh, North Carolina.
E4.15
TEM Analysis of Mechanical Polishing Related Damage in Silicon Carbide. Joshua Russell Grim1, M. Benamara1, V. D. Heydemann2, W. J. Everson2 and Marek Skowronski1; 1Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania; 2Electro-Optics Center, Pennsylvania State University, Freeport, Pennsylvania.
E4.16
The Influence of Stoichiometry on Grown-in Point Defects
and Impurities in PVT Growth 6H-SiC Single Crystals. Qiang
Li1, Alexander Polyakov1, Mark Fanton2 and
Marek Skowronski1; 1Materials Science
and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania; 2Pennsylvania
State University Electro-Optics Center, Freeport, Pennsylvania.
E4.17
Engineering of EL2 Related Defects in SI-GaAs Using High
Energy Light Ion Irradiation. Debdulal Kabiraj1 and Subhasis Ghosh2; 1Nuclear Science Centre, New Delhi, Delhi, India; 2Jawaharlal Nehru University, New Delhi, Delhi, India.
E4.18
Defect Characterization on CdTe Bulk Crystals Doped with Heavy Elements. Svetlana Neretina1, N. V. Sochinskii2, P. Mascher1 and E. Saucedo3; 1Center for Electrophotonic Materials and Devices (CEMD), Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada; 2Instituto de Microelectronica de Madrid-CNM-CSIC, Madrid, Spain; 3Material Physic Department, Universidad Autonoma de Madrid, Madrid, Spain.
E4.19
Compositional Changes in the Infrared Optical Properties of Cr Doped CdZnTe Bulk Crystals. Uwe Hommerich1, Althea G. Bluiett1, Ivy K. Jones1, EiEi Nyein1, Sudhir Trivedi2 and Ramesh T. Shah3; 1Dept. of Physics, Hampton University, Hampton, Virginia; 2Brimrose Corporation, Baltimore, Maryland; 3Applied Physics Dept., University of Baroda, Baroda, India.
E4.20
Relaxation Mechanism of SiGe Thin Film on SOI Substrate. Zengfeng Di1,2, Miao Zhang2, Weili Liu2, Ming Zhu1,2, Chenglu Lin2 and Paul K. Chu1; 1Physics & Materials Science, City University of Hong Kong, Kowloon, Hong Kong; 2The Research Center of Semiconductor Functional Film Engineering Technology & State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
E4.21
Phase Field Simulation of Alloying Effects on Metal Silicide Morphology Evolution. Mathieu Bouville1, Dongzhi Chi1, Shenyang Hu2, Long-Qing Chen2 and David J. Srolovitz3; 1Institute of Materials Research and Engineering, Singapore, Singapore; 2Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania; 3Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey.
E4.22
Various Methods to Reduce Defect States in Tantalum Oxide
Films for DRAM Applications. Wai-Shing Lau1,
Alfred T. S. Tan1, Nathan P. Sandler2 and
Taejoon Han2; 1School of EEE, Nanyang
Technological University, Singapore, Singapore; 2Lam
Research Corpoartion, Fremont, California.
E4.23
A Self-Consistent Pseudopotential for Superlattices. Gregory C. Dente1,2, Michael L. Tilton2, Andrew Ongstad2 and Ron Kaspi2; 1GCD Associates, Albuquerque, New Mexico; 2Air Force Research Laboratory, Kirtland AFB, New Mexico.
E4.24
Point Defects Interaction with Extended Defects and Impurities
in the Si-SiO2 System During the Process of its Formation. Daniel Kropman, Uno Abru, Tiit Karner, Ylo Ugaste, Enn Mellikov, Marit Kauk, Ivo Heinmaa and Ago Samoson; Estonian Maritime Academy, Tallinn, Estonia.
E4.25
Modelling the MOS Device Conductance Using an Extended Tunnelling Model and Subsequent Determination of Interface Traps. Nikolaos Konofaos, Computer Engineering and Informatics Dept., University of Patras, Patras, Achaia, Greece.
E4.26
Transferred to E11.3.
E4.27
Strain Relaxation in Semiconductor Thin Films on (001) Oriented
Semiconductor Substrates Via Use of Defected Sub-Surface Layers. Atul
Konkar, Materials Science, University of Southern California,
Los Angeles, California.
E4.28
The Influence of Stress on the Formation of Boron Interstitial
Clusters. Michelle Phen and Kevin Jones; University
of Florida, Gainesville, Florida.
E4.29
Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium Heterostructures. Mohammad Hasanuzzaman and Yaser M. Haddara; Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario, Canada.
E4.30
Trisilane Based Epitaxy of Biaxially Stressed Silicon Films Doped with Carbon and Arsenic for CMOS Applications. Matthias Bauer1, Stefan Zollner2, David Theodore2, Michael Canonico2, Pierre Tomasini1, Bich-Yen Nguyen2 and Chantal Arena1; 1ASM America Inc., Phoenix, Arizona; 2Freescale Semiconductor, Tempe, Arizona.
E4.31
Transmission Electron Microscopic Studies of Strained Si
CMOS. Qianghua Xie1, Peter Fejes1,
Mike Kottke1, Xiangdong Wang1, Mike Canonico1,
David Theodore1, Ted White2, Mariam Sadaka2,
Victor Vartanian2, Aaron Thean2, Bich-Yen
Nguyen2, Shawn Thomas4, Ran Liu5 and
Alex Barr3; 1Physical Analysis Laboratory
Arizona, Freescale Semiconductor Inc., Tempe, Arizona; 2Advanced
Process Research and Development Laboratory, Freescale Semiconductor
Inc., Austin, Texas; 3Crolles-2,
Freescale Semiconductor Inc, Crolles,
France; 4Embedded Systems and Science Research Laboratory,
Motorola Inc., Tempe,
Arizona; 5School of Micro-electronics, Fudan University,
Shanghai, China.
E4.32
Device Parametric Shift Mechanism Caused by Boron Halo Redistribution Resulting from Dose Rate Dependence of SDE Implant. Ukyo Jeong, Jinning Liu, Baonian Guo, Kyuha Shim and Sandeep Mehta; Varian Semiconductor Equipment Associates, Gloucester, Massachusetts.
E4.33
ABSTRACT WITHDRAWN
E4.34
Impact of Small Miscuts of (0001) Sapphire on the Growth of AlxGa1-xN /AlN Superlattices with AlN Buffer Layer. Zheng Gong, Wenhong Sun, Jianping Zhang, Mikhail Erikovich Gaevski, Hongmei Wang, Jinwei Yang and Asif Khan; Electrical Engineering, University of South Carolina, Columbia, South Carolina.
E4.35
Magnetic and Transport Properties of Ge: Mn Granular System. Wu Yihong1,2, Li Hongliang1,2, Liu Tie1,2, Wang Shijie3 and Guo Zaibing2; 1Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore; 2Data Storage Institute (DSI), Singapore, Singapore; 3Institute of Materials Research and Engineering (IMRE), Singapore, Singapore.
E4.36
Radiative Versus Nonradiative Decay Processes in Germanium
Nanocrystals Probed by Time-Resolved Photoluminescence Spectroscopy. P. K. Giri1, R. Kesavamoorthy2, B. K. Panigrahi2 and K. G. M. Nair2; 1Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam, India; 2Materials Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam, Tamil Nadu, India.
E4.37
Direct Measurement of Ion Beam Induced, Nanoscale Roughening. Bentao
Cui1,2, Phillip I. Cohen2 and Amir
M. Dabiran3; 1Department of Chemical
Engineering and Materials Science, University of Minnesota,
Minneapolis, Minnesota; 2Department of Electrical
and Computer Engineering, University of Minnesota, Minneapolis,
Minnesota; 3SVT Associates, Inc, Eden Prairie, Minnesota.
E4.38
Elastic Stress Relaxation at Nanoscale: A Comprehensive Theoretical and Experimental Investigation of the Dislocation Loops Associated with As-Sb Nanoclusters in GaAs. Vladimir Chaldyshev1, A. L. Kolesnikova2, N. A. Bert1 and A. E. Romanov1; 1Ioffe Institute, Saint Petersburg, Russian Federation; 2Institute of Problems of Mechanical Engineering, Saint Petersburg, Russian Federation.
E4.39
Defect-Induced Unoccupied Electronic States in Nanostructured SnO2. Sergei O. Kucheyev, T. van Buuren, T. F. Baumann, Y. M. Wang, T. M. Willey, R. W. Meulenberg, J. H. Satcher, L. J. Terminello and A. V. Hamza; Lawrence Livermore National Laboratory, Livermore, California.
E4.40
Infrared Spectroscopy of Impurities in ZnO Nanoparticles. W. M. Hlaing Oo and M. D. McCluskey; Department of Physics, Washington State University, Pullman, Washington.
SESSION E5: Novel Materials, Synthetic Structures and Nanomanipulation of Defects/Dopants
Chairs: S.R. Schofield and M. Tabe
Wednesday Morning, March 30, 2005
Room 2006 (Moscone West)
8:30 AM *E5.1
Electrical Transient Based Defect Spectroscopy in Polymeric and Organic Semiconductors. Yashowanta N. Mohapatra3,2,1, Vishal Varshney1, Vineet Rao1,3, Samarendra P. Singh3,1 and Girija S. Samal2,1; 1Samtel Centre for Display Technology, Indian Institute of Technology Kanpur, Kanpur, U.P., India; 2Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur, U.P., India; 3Department of Physics, Indian Institute of Technology Kanpur, Kanpur, U.P., India.
9:00 AM *E5.2
Rare-Earth Doped Silicon Nanoclusters for Microphotonics. Francesco Priolo1, Domenico Pacifici1, Giorgia Franzo1 and Fabio Iacona2; 1Dept. Physics & Astronomy, MATIS-INFM & Univ. Catania, Catania, Italy; 2IMM, CNR, Catania, Italy.
9:30 AM E5.3
Efficient Spin Injection from NiFe/CoFe into GaAs in Spin-LED
Structures. Shin Kim1, Jungho Choi1,
Donggi Choi1, Eunsoon Oh1, Yongju
Park2, Kyung Ho Shin2, Kwang Yoon Kim2 and
Dong Geun Oh3; 1Department of Physics,
Chungnam National University, Daejeon, South Korea; 2Korea
Institute of Science and Technology, Seoul, South Korea; 3Korea
Basic Science Institute, Daejeon, South Korea.
9:45 AM BREAK
10:15 AM *E5.4
Atomically-Precise Positioning of Phosphorus in Silicon
Using STM. Steven Richard Schofield1,2, Neil J. Curson2, Hugh F. Wilson3, Nigel A. Marks3, Oliver Warschkow3, Frank J. Ruess2, Toby Hallam2, Phil V. Smith1, Marian W. Radny1, Michelle Y. Simmons2, David R. McKenzie3 and Robert G. Clark2; 1School of Mathematical and Physical Sciences, University of Newcastle, Callaghan, New South Wales, Australia; 2Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney, New South Wales, Australia; 3Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, New South Wales, Australia.
10:45 AM *E5.5
Imaging Electrically Deactivating Defects in Si One Impurity
at a Time. Paul Voyles1, David Muller2 and
John Grazul2; 1Materials Science and
Engineering, University of Wisconsin, Madison, Madison, Wisconsin; 2School
of Applied and Engineering Physics, Cornell University, Ithaca,
New York.
11:15 AM E5.6
Polysilicon Memory Switching: The Role of Crystalline Defects. Brad
Herner, Carole Jahn and Don Kidwell; Matrix Semiconductor,
Santa Clara, California.
11:30 AM E5.7
Analysis of Nanoscale Deformation in GaAs(100): Towards Patterned Growth of Quantum Dots. Curtis Raymund Taylor1, Eric Stach2, Ajay Malshe4 and Gregory Salamo3; 1Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas; 2Material Science, Purdue University, West Lafayette, Indiana; 3Department of Physics, University of Arkansas, Fayetteville, Arkansas; 4Department of Mechanical Engineering, University of Arkansas, Fayetteville, Arkansas.
11:45 AM E5.8
Hydrogen in GaMnAs: Engineering of Magnetism by Defects. Martin
S. Brandt1, Christoph Bihler1, Hans
Huebl1, Sebastian T. B. Goennenwein3 and
Wladimir Schoch2; 1Walter Schottky Institute,
Garching, Germany; 2Universitaet Ulm, Ulm, Germany; 3TU
Delft, Delft.
SESSION E6: Defects in Devices
Chairs: Peter Kiesel and W.C. McColgin
Wednesday Afternoon, March 30, 2005
Room 2006 (Moscone West)
1:30 PM *E6.1
Electronically Stimulated Degradation of Crystalline Silicon Solar Cells. Jan Schmidt1, Karsten Bothe1, Daniel Macdonald2, James Adey3, Robert Jones3 and Derek Palmer3; 1Institute of Solar Energy Research Hameln/Emmerthal (ISFH), Emmerthal, Germany; 2Department of Engineering, Australian National University (ANU), Canberra, Australian Capital Territory, Australia; 3School of Physics, University of Exeter, Exeter, United Kingdom.
2:00 PM E6.2
Efficiency Limitations of Multicrystalline Silicon Solar Cells Due to Defect Clusters. Bhushan Sopori1, Chuan Li1, S. Narayanan2 and Dave Carlson2; 1National Renewable Energy Laboratory, Golden, Colorado; 2National Renewable Energy Laboratory, Golden, Colorado; 3BP Solar, Fredrick, Maryland; 4BP Solar, Fredrick, Maryland.
2:15 PM E6.3
Silicon Wafer Defect Self-Characterization with CCD Image
Sensors. William C. McColgin, Alexa Perry, Dean
J. Seidler and James P. Lavine; Image Sensor Solutions, Eastman
Kodak Company, Rochester, New York.
2:30 PM E6.4
Silicon Light Emissions from Boron Implant-Induced Extended Defects. Grant Z. Pan1, Roman P. Ostroumov2, Yaguang Lian1, Liping P. Ren3 and Kang L. Wang2; 1Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, California; 2Device Research Laboratory, and MARCO Focus Center on Functional Engineered Nano Architectonics-FENA, University of California at Los Angeles, Los Angeles, California; 3Nanoelectronics and Nanophotonics Laboratory, Global Nanosystems, Inc., Los Angeles, California.
2:45 PM BREAK
3:15 PM E6.5
Conductivity Enhancement in Thin Silicon-on-Insulator Layer
Embedding Artificial Dislocation Network. Yasuhiko Ishikawa1,
Kazuaki Yamauchi1, Ratno Nuryadi1, Hiroya
Ikeda1, Michiharu Tabe1, Yukinori Ono2,
Masao Nagase2, Masashi Arita3 and Yasuo
Takahashi3; 1Research Institute of Electronics,
Shizuoka University, Hamamatsu, Japan; 2NTT Basic
Research Laboratories, Atsugi, Japan; 3Graduate
School of Information Science and Technology, Hokkaido University,
Sapporo, Japan.
3:30 PM E6.6
Physical Mechanisms of Negative-Bias Temperature Instability. Leonidas Tsetseris1, X. J. Zhou2, D. M. Fleetwood2, R. D. Schrimpf2 and S. T. Pantelides1; 1Department of Physics & Astronomy, Vanderbilt University, Nashville, Tennessee; 2Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee.
3:45 PM *E6.7
Silicon Single-Electron Pump and Turnstile: Interplay with Crystalline Imperfections. Yukinori Ono1, Yasuo Takahashi2 and Hiroshi Inokawa1; 1NTT Basic Research Laboratories, NTT, Atsugi, Kanagawa, Japan; 2Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Hokkaido, Japan.
4:15 PM E6.8
Random Telegraph Signals in Carbon Nanotube Field Effect Transistors. Fei Liu1, Mingqiang Bao1, Kang L. Wang1, XiaoLei Liu2, Chao Li2 and Chongwu Zhou2; 1EE, UCLA, LA, California; 2EE, USC, LA, California.
4:30 PM E6.9
A Comparison of Lattice-Matched GaInNAs and Metamorphic
InGaAs Photodetector Devices. David Bryan Jackrel, Homan Yuen, Seth Bank, Mark Wistey, Junxian Fu, Xiaojun Yu, Zhilong Rao and James S. Harris; Solid State and Photonics Laboratory, Stanford University, Stanford, California.
4:45 PM E6.10
A Novel Method to Synthesize Blue-luminescent Doped GaN Powders. Rafael Garcia1, Abigail Bell1, Fernando A. Ponce1 and Alan C. Thomas2; 1Physics & Astronomy, Arizona State University, Tempe, Arizona; 2Roger Corporation, Durel Division, Chandler, Arizona.
SESSION E7: Ion Implantation and Irradiation Effects
Chairs: S. Ashok and Y.N. Mohapatra
Thursday Morning, March 31, 2005
Room 2006 (Moscone West)
8:30 AM E7.1
Vacancy Engineering in Bulk and SOI Substrates for Ultra-Shallow
Boron Junctions. Andy James Smith, Benjamin Colombeau,
Russell Gwilliam, Nick Cowern and Brian Sealy; ATI, Surrey
University, Surrey, United Kingdom.
8:45 AM E7.2
Diffusion and Clustering of Boron at High and Room Temperature. Enrico Napolitani1, Davide De Salvador1, Gabriele Bisognin1, Alberto Carnera1, Elena Bruno2, Salvo Mirabella2, Giuliana Impellizzeri2 and Francesco Priolo2; 1MATIS-INFM and Dipartimento di Fisica, Universita di Padova, Padova, Italy; 2MATIS-INFM and Dipartimento di Fisica ed Astronomia, Universita di Catania, Catania, Italy.
9:00 AM *E7.3
Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide. Esidor Ntsoenzok1, Hanan Assaf1 and Marie Odile Ruault2; 1CNRS-CERI, Orleans, France; 2CSNSM, CNRS-IN2P3, Orsay, France.
9:30 AM E7.4
Defects Induced by Helium Implantation: Impact on Boron Diffusivity. Frederic Cayrel1, Daniel Alquier1, Laurent Ventura1, Christiane Dubois2 and Robert Jerisian1; 1LMP, University Francois Rabelais, Tours, France; 2LPM, INSA, Lyon, France.
9:45 AM E7.5
Roles of Impurities and Implantation Depth on He+-Cavity Equilibrium Shape in Silicon. Gabrielle Regula1, Marc Desvignes3, Rachid El Bouayadi1, Maryse Lancin1, Esidor Ntsoenzok2 and Bernard Pichaud1; 1Laboratoire TECSEN, Marseille, France; 2CERI - CNRS, Orleans, France; 3MECASURF, ENSAM, Aix-en-Provence, France.
10:00 AM BREAK
10:30 AM E7.6
Theory of Fluorine-Induced Suppression of Transient Impurity
Diffusion in Silicon. Vincenzo Fiorentini1,2,
Giorgia Lopez1,2, Giuliana Impellizzeri3,
Salvatore Mirabella3 and Enrico Napolitani3; 1Dept.
of Physics, University of Cagliari, Monserrato, Italy; 2INFM-SLACS,
Cagliari, Italy; 3INFM-Matis, Catania, Italy.
10:45 AM E7.7
Fluorine Behavior in Preamorphized Si: Segregation and Point
Defect Interaction. Giuliana Impellizzeri1, Salvatore Mirabella1, Lucia Romano1, Maria Grazia Grimaldi1, Francesco Priolo1, Enrico Napolitani2 and Alberto Carnera2; 1MATIS-INFM-University of Catania, Department of Physics and Astronomy, Catania, Italy; 2MATIS-INFM-University of Padova, Department of Physics, Padova, Italy.
11:00 AM E7.8
Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy. Mehmet Alper Sahiner1, Parviz Ansari1, Malcolm S. Carroll2, Yong S. Suh3, Roland A. Levy3, Temel H. Buyuklimanli4 and Mark C. Croft5; 1Physics, Seton Hall University, South Orange, New Jersey; 2Sandia National Laboratories, Albuquerque, New Mexico; 3New Jersey Institute of Technology, Newark, New Jersey; 4Evans East, East Windsor, New Jersey; 5Rutgers University, New Brunswick, New Jersey.
11:15 AM E7.9
X-ray Spectroscopy of InN Heavily Irradiated with He. Jonathan Denlinger1, S. X. Li2,3, R. E. Jones2,3, K.-M. Yu2, J. Wu2,3, J. W. Ager III2, W. Walukiewicz2, E. E. Haller2,3, Hai Lu4 and William J. Schaff4; 1Advanced Light Source, Lawrence Berkeley National Lab, Berkeley, California; 2Materials Science Division, Lawrence Berkeley National Lab, Berkeley, California; 3Materials Science and Engineering, University of California, Berkeley, California; 4Dept. of Electrical and Computer Engineering, Cornell University, Ithaca, New York.
11:30 AM E7.10
Electronic and Optical Properties of High Energy Particle-Irradiated
In-Rich InGaN Alloys. Sonny X. Li1,2, Kin Man Yu1, Rebecca E. Jones1,2, Junqiao Wu1, Wladek Walukiewicz1, Joel W. Ager1, Wei Shan1, Eugene E. Haller1,2, Hai Lu3, William J. Schaff3 and William Kemp4; 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California; 2Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California; 3Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York; 4Air Force Research Laboratory, Kirtland Air Force Base, Kirtland AFB, New Mexico.
11:45 AM E7.11
Intrinsic and N-Related Defects in Hydrogen-Free ZnO Films
Fabricated by Plasma Immersion Ion Implantation. Y. F. Mei1, Ricky K. Y. Fu1, G. G. Siu1, Paul K. Chu1, C. L. Yang2 and W. K. Ge2; 1Physics & Materials Science, City University of Hong Kong, Kowloon, Hong Kong; 2Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong.
SESSION E8: Defect Properties, Activation, Passivation and Reaction
Chairs: N.M. Johnson and P.M. Voyles
Thursday Afternoon, March 31, 2005
Room 2006 (Moscone West)
1:30 PM *E8.1
Mutual Passivation in Dilute GaNxAs1-x Alloys. Kin Man Yu1, Wladek Walukiewicz1, Junqiao Wu2, D. E. Mars3, Michael A. Scarpulla4,1 and Oscar D. Dubon4,1; 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California; 2Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts; 3Agilent Laboratories, Palo Alto, California; 4Department of Materials Science and Engineering, University of California, Berkeley, California.
2:00 PM E8.2
Quantitative Modeling of Self-Interstitial Diffusion in Silicon. N. A. Modine, 1112, Sandia National Labs, Albuquerque, New Mexico.
2:15 PM E8.3
Dopant Deactivating Mechanisms and Co-Doping Strategies
in Heavily Doped Silicon. Dominik Christoph Mueller and Wolfgang Fichtner; Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich, Zurich, Switzerland.
2:30 PM BREAK
3:00 PM *E8.4
Determination of Diffusivities of Si Self-Diffusion and
Si Self-Interstitials Using Isotopically Enriched Single- or
Multi-30Si Epitaxial Layers. Satoru Matsumoto1, S. Seto1, S. Aid1, T. Sakaguchi1, Y. Nakabayashi1, K. Toyonaga1, Y. Shimamune2, Y. Hashiba2, M. Sakuraba2, J. Murota2, K. Wada3 and T. Abe4; 1Electrical Engineering, Keio University, Yokohama, Japan; 2Tohoku University, Sendai, Japan; 3MIT, Cambridge, Massachusetts; 4Shin-Etsu Handoutai, Isobe, Japan.
3:30 PM E8.5
Diffusion of Arsenic-Silicon Interstitial Complexes. Scott A. Harrison, Thomas F. Edgar and Gyeong S. Hwang; Chemical Engineering, University of Texas at Austin, Austin, Texas.
3:45 PM E8.6
Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors. D. Benoit1, P. Morin2, M. Cohen1 and J. L. Regolini1; 1STMicroelectronics Crolles1, Crolles, France; 2STMicroelectronics Crolles2 Alliance, Crolles, France.
SESSION E9: Poster Session II
Chairs: J. Chevallier and M. Tabe
Thursday Evening, March 31, 2005
8:00 PM
Salons 8-15 (Marriott)
E9.1
Origin of Vacancy and Interstitial Stabilization at the Amorphous-Crystalline Silicon Interface. Scott A. Harrison1, Taras A. Kirichenko2, Decai Yu1, Thomas F. Edgar1, Sanjay K. Banerjee2 and Gyeong S. Hwang1; 1Chemical Engineering, University of Texas at Austin, Austin, Texas; 2Electrical Engineering, University of Texas at Austin, Austin, Texas.
E9.2
A New Post Annealing Method for AlGaN/GaN Heterostructure
Field-Effect Transistors Employing XeCl Excimer Laser
Pulses. Min-Woo Ha, Seung-Chul Lee, Joong-Hyun
Park, Young-Hwan Choi, Kwang-Seok Seo and Min-Koo Han;
School of Electrical Engineering #50, Seoul National
University, Seoul, South Korea.
E9.3
Fabrication of Silicon Carbide PIN Diodes by Laser Doping and Planar Edge Termination by Laser Metallization. Z. Tian1, N. R. Quick2 and A. Kar1; 1College of Optics and Photonics/CREOL, Mechanical, Materials, and Aerospace Engineering Department, University of Central Florida, Orlando, Florida; 2Applicote Associates, LLC, Orlando, Florida.
E9.4
Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures. Halyna M. Khlyap1,2 and Petro G. Sydorchuk2; 1Physics, Universsity of Technology, Kaiserslautern, Germany; 2Physics, State Pedagogical University, Drohobych, Ukraine.
E9.5
ABSTRACT WITHDRAWN
E9.6
ABSTRACT WITHDRAWN
E9.7
He Implant Energy Dependence of Thermal Growth of Nanocavities in Si. Esidor Ntsoenzok1, Rachid El Bouayadi2, Gabrielle Regula2, Bernard Pichaud2 and S. Ashok3; 1CNRS-CERI, Orleans, France; 2TECSEN, case 151, Faculte des Sciences ST-Jerome, Marseille, France; 3Department of Engineering Science and Mechanics, the Pennsylvania State University, University Park, Pennsylvania.
E9.8
Blistering and Splitting in Hydrogen-Implanted Silicon. Esidor
Ntsoenzok1, Hanan Assaf1 and
S. Ashok2; 1CNRS-CERI, Orleans,
France; 2Department of Engineering Science
and Mechanics, the Pennsylvania State University, University
Park, Pennsylvania.
E9.9
Variation of Surface Sink Possibility for Point Defects Removing in Annealing. Min Yu1, Xiao Zhang1, Kai Zhan1, Ru Huang1, Xing Zhang1, Yangyuan Wang1, Jinyu Zhang2 and Hideki Oka3; 1Institute of Microelectronics, Peking University, Beijing, China; 2Fujitsu R&D Center Co. Ltd., Beijing, China; 3Fujitsu Laboratories Ltd., Atsugi, Japan.
E9.10
ABSTRACT WITHDRAWN
E9.11
Optical Properties of Hydrogen Implanted ZnO. Jung-Kun
Lee1, Michael Nastasi1, David
Hamby2 and Don Lucca2; 1Materials
Science and Technology, Los Alamos National Laboratory,
Los Alamos, New Mexico; 2School of Mechanical
and Aerospace Engineering, Oklahoma State University,
Stillwater, Oklahoma.
E9.12
Defect Structure in ZnO Studied by Ab-Initio Calculation. Naoki
Ohashi and Hajime Haneda; Advanced Materials Laboratory,
National Institute for Materials Science, Tsukuba, Ibaraki,
Japan.
E9.13
Fabrication of n+p Junction Diode Using Plasma Doping
Followed by Low Temperature Annealing. Kiju Im1, Won-ju Cho1, Chang-Geun Ahn1, Jong-Heon Yang1, In-Bok Baek1, Seongjae Lee1, Sungkweon Baek1 and Hyunsang Hwang2; 1Nano Electronics Devices Team, ETRI, Daejeon, South Korea; 2Material Science, GIST, Kwangju, South Korea.
E9.14
Germanium Ultra-Shallow n+/p Junction Formed by Low-Energy Plasma Doping and Laser Annealing. Sungho Heo1, Sungkweon Baek1, Dongkyu Lee1, Hyungsuk Jung2 and Hyunsang Hwang1; 1Materials Science and Engineering, Gist, Gwangju, South Korea; 2Samsung Electronics Co., Suwon, South Korea.
E9.15
The Electrical Phenomena of Non-Planar Structures
and Devices with Novel Plasma Doping. Jong-Heon Yang, In-Bok Baek, Kiju Im, Chang-Geun Ahn, Sungkweon Baek, Won-Ju Cho and Seongjae Lee; Future Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, South Korea.
E9.16
Theoretical Investigation of Formation of (n-n+)-Junction
in the Ion-Implanted Crystalline Matrix. Halyna M. Khlyap1 and Roman M. Peleshchak2; 1Physics, Universsity of Technology, Kaiserslautern, Germany; 2Physics, State Pedagogical University, Drohobych, Ukraine.
E9.17
ABSTRACT WITHDRAWN
E9.18
Impacts of Back Surface Conditions on the Behavior
of Oxygen in Heavily Arsenic Doped Czochralski Silicon
Wafers. Qi Wang1, Manmohan Daggubati1,
Hossein Paravi1, Rong Yu2 and Xiaofeng
Zhang2; 1Fairchild Semiconductor,
West Jordan, Utah; 2Materials Sciences Division,
Lawrence Berkeley National Laboratory, Berkeley, California.
E9.19
Influence of Oxygen Vacancies and Strain on Electronic
Reliability of SiO2-x Films. Ken Suzuki, Hideo Miura and Tetsuo Shoji; Fracture and Reliability Research Institute, Tohoku University, Sendai, Miyagi, Japan.
E9.20
ABSTRACT WITHDRAWN
E9.21
Contact Free Defect Investigation in as-Grown Fe Doped
SI-InP. Sabrina Hahn1, Torsten Hahn1,
Bianca Gruendig-Wendrock1, Kay Dornich1,
G. Mueller2, P. Schwesig2 and J.
Niklas1; 1Institut f. Experimental
Physics, TU Freiberg, Freiberg, Germany; 2Dept.
of Materials Science, University Erlangen, Nuernberg,
Germany.
E9.22
Peculiarities of Defect Formation Processes in ZnSe Crystals with Isovalent Te Impurity. Victor Makhniy2, Peter Gorley1, Irene Tkachenko2, Paul Horley1, Yuri Vorobiev3 and Jesus Gonzalez Hernandez3; 1Electronics and Energy Engineering, Chernivtsi National University, Chernivtsi, Chernivtsi, Ukraine; 2Optoelectronics, Chernivtsi National University, Chernivtsi, Chernivtsi, Ukraine; 3Unidad Queretaro, CINVESTAV-IPN, Queretaro, QRO, Mexico.
E9.23
Electronic Structure of Defects and Defect Clusters in Narrow Band-Gap Semiconductors[*]. Subhendra D. Mahanti1, Daniel Bilc1, Salameh Ahmad1 and Mercouri G. Kanatzidis2; 1Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan; 2Department of Chemistry, Michigan State University, East Lansing, Michigan.
E9.24
ABSTRACT WITHDRAWN
E9.25
Micro-Raman Spectra Analysis of the Evolution of Hydrogen
Related Defects and Void Formation in the Silicon Ion-Cut
Process. Wolfgang Duengen1, Reinhart
Job1, Yue Ma1, Yuelong Huang1,
Wolfgang R. Fahrner1, Lars O. Keller2,
Achim Wiggershaus2 and John T. Horstmann2; 1Electrical
Engineering and Information Technology, University of
Hagen, Hagen, Germany; 2Electrical Engineering
and Information Technology, University of Dortmund, Dortmund,
Germany.
E9.26
P-N Junction Diodes Fabricated on the Basis of Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon. Yuelong Huang, Katrina Meusinger, Yue Ma, Wolfgang Duengen, Reinhart Job and Wolfgang R. Fahrner; Electrical Engineering and Information Technology, University of Hagen, Hagen, Germany.
E9.27
Hydrogen Diffusion and Crystallization Induced a Structural Change in Boron Doped Hydrogenated Amorphous Silicon Films. Kail Fatiha1,2, Hadjadj Aomar2 and Roca i Cabarrocas Pere1; 1Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, 91128 Palaiseau, France; 2Laboratoire d'Analyse des Solides, Surfaceset Interfaces, Universite de Reims, 51687 Reims Cedex 2, France.
E9.28
Dopant Activation Enhancement by Hydrogen at Low Annealing
Temperatures. Aniruddha Vengurlekar1,
S. Ashok1 and Christine E. Kalnas2; 1Department
of Engineering Science, Pennsylvania State University,
State College, Pennsylvania; 2Solid State
Measurements Inc., Pittsburgh, Pennsylvania.
E9.29
Hydrogen Ion Implantation Caused Defect Structures
in Heavily Doped Silicon Substrates. Minhua Li and
Qi Wang; Fairchild Semiconductor, West Jordan, Utah.
E9.30
Dynamics of Hydrogenation-Induced Defects in Si During
Solar Cell Processing. Bhushan Sopori1,
Kim Jones1, Robert Reedy1, Ajeet
Rohatgi2 and Vijay Yeludur2; 1National
Renewable Energy Laboratory, Golden, Colorado; 2Georgia
Institute of Technology, Atlanta, Georgia.
E9.31
Effect of Deuterium Diffusion on the Electrical Properties
of AlGaN/GaN Heterostructures. Jaime
Mimila-Arroyo1, Michel Barbe1,
Francois Jomard1, Jacques Chevallier1,
Marie-Antoinette Poisson2, Sylvain Delage2,
Christian Dua2, Yvon Cordier3,
Maxime Hugues3, Fabrice Semond3,
Franck Natali3, Philippe Lorenzini3 and
Jean Massies3; 1Laboratoire de
Physique des Solides et de Cristallogenese, CNRS, Meudon,
France; 2Thales Research and Technology, Orsay,
France; 3Centre de Recherche sur l'Heteroepitaxie
et Applications, CNRS, Valbonne, France.
E9.32
Binding of N Interstitials with MgH Complexes in p-Type
GaN. Ryan Rich Wixom and Alan F. Wright; Sandia National Laboratories, Albuquerque, New Mexico.
E9.33
Effect of Substrate Orientation on the Growth Rate,
Surface Morphology and Silicon Incorporation on GaSb
Grown by Metal-Organic Vapor Phase Epitaxy. Jian Yu and Ishwara B. Bhat; Rensselaer Polytechnic Institute, Troy, New York.
E9.34
Photoelectron Emission Technique for the Surface Analysis
of Semiconductors. Takao Sakurai1, Yoshihiro Momose2, Masanori Kudou2 and Keiji Nakayama3; 1Division of General Education, Ashikaga Institute of technology, Ashikaga, Japan; 2Depertment of Material Science, Ibaraki University, Hitachi, Japan; 3National Institute of Advnced Industrial Science and Technology, Tukuba, Japan.
E9.35
Identification and Characterization of Submicron Defects for Semiconductor Processing. Wei Liu1, Aime Fausz2, John Svoboda2, Brian Butcher3, Rick Williams3 and Steve Schauer1; 1Physical Analytical Laboratory, Freescale Semiconductor, Chandler, Arizona; 2MOS12 Die Fab, Freescale Semiconductor Inc., Chandler, Arizona; 3MRAM, Technology Solutions Organization, Freescale Semiconductor Inc., Chandler, Arizona.
E9.36
ABSTRACT WITHDRAWN
E9.37
Thermal Transformation of Hydrogen Bonds in a-SiC:H Films: Structural and Optical Properties. Andriy Vasin1, S. P. Kolesnik1, A. A. Konchits1, V. S. Lysenko1, A. N. Nazarov1, A. V. Rusavsky1 and S. Ashok2; 1Institute of Semiconductor Physics, Kiev, Ukraine; 2The Pennsylvania State University, University Park, Pennsylvania.
E9.38
Probing Process-Induced Defects in Si Using Infrared
Photoelastic Stress Measurement Technique. X. H. Liu1,3, H. J. Peng1, N. Ke1,3, S. P. Wong1,3 and Shounan Zhao2; 1Electronic Engineering, Chinese University of Hong Kong, Shatin, N.T., Hong Kong; 2Applied Physics, South China University of Technology, Guangzhou, China; 3Materials Science and Technology Research Centre, Chinese University of Hong Kong, Shatin, N.T., Hong Kong.
E9.39
Defect Reduction in Si-Based Metal-Semiconductor-Metal
Photodetectors with Cryogenic Processed Schottky Contacts. Meiya Li and Wayne A. Anderson; Electrical Engineering, SUNY at Buffalo, Buffalo, New York.
E9.40
Optical and Electrical Characterization of Quantum Dot
Infrared Photodetector Structure Treated with Hydrogen-Plasma.
Hyoung Do Nam1,2, Sung-ho Hwang1,
Ju Young Lim1,2, N.K. Cho1, S.P. Ryu1,
J.D. Song1, Won Jun Choi1, J.S. Yang1,
W.J.Cho1, L.I. Lee1, H.S. Yang2;
1Nano Devices Research Center, KIST, South Korea;
2Dept. of Physics, Chung-Ang University, Seoul,
South Korea.
E9.41
Mechanism of Phosphine Dessociation of the Si(001) Surface.
Oliver Warschkow1, High F. Wilson1,
Nigel A. Marks1, Steven R. Schofield2,3,
Neil J. Curson2, Phil V. Smith3, Marian
W. Radny3, David R. McKenzie1, Michelle
Y. Simmons2; 1Centre for Quantum Computer
Technology, Schhol of Physics, The University of Sydney, Sydney
NSW, Australia; 2Centre for Quantum Computer Technology,
School of Physics, University of New South Wales, Sydney NSW,
Australia; 3School of Mathematical and Physical
Sciences, University of Newcastle, Callaghan NSW, Australia.
SESSION E10: Hydrogen-Defect Interactions
Chairs: Esidor Ntsoenzok and B.L. Sopori
Friday Morning, April 1, 2005
Room 2006 (Moscone West)
NOTE EARLY START
8:00 AM *E10.1
ABSTRACT WITHDRAWN.
8:30 AM E10.2
Void Formation in Hydrogen Implanted
and Subsequently Plasma Hydrogenated
and Annealed Czochralski Silicon. Reinhart
Job1, Wolfgang Duengen1,
Yue Ma1, Yuelong Huang1,
Lars O. Keller2, Achim Wiggershaus2 and
John T. Horstmann2; 1Electrical
Engineering and Information Technology,
University of Hagen, Hagen, Germany; 2Electrical
Engineering and Information Technology,
University of Dortmund, Dortmund, Germany.
8:45 AM E10.3
Study of the Hydrogen Effect on Dopant Activation for the Plasma Doping and Ion Implantation. Sungkweon Baek1,2, Sungheo Heo1, Dongkyu Lee1, Won-Ju Cho2, Kiju Im2, Chang-Geun Ahn2, Jong-Heon Yang2, In-Bok Baek2, Seongjae Lee2 and Hyunsang Hwang1; 1Material Science & Engineering, Gwangju Institute of Science and Technology, Gwangju, South Korea; 2Future Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, South Korea.
9:00 AM *E10.4
Hydrogen Donors in Zinc Oxide. M. D. McCluskey and S. J. Jokela; Department of Physics, Washington State University, Pullman, Washington.
9:30 AM E10.5
Unusual Effects of Hydrogen in GaNP Alloys: A General Property of Dilute Nitrides. Irina A. Buyanova1, M. Izadifard1, I. G. Ivanov1, J. Birch1, Weimin M. Chen1, M. Felici2, A. Polimeni2, M. Capizzi2, Y. G. Hong3, H. P. Xin3 and C. W. Tu3; 1Linkoping University, Linkoping, Sweden; 2University of Rome "La Sapienza", Rome, Italy; 3University of California, La Jolla, California.
9:45 AM BREAK
SESSION E11: Defect Characterization
Chairs: Reinhart Job and Matthew D. McCluskey
Friday Morning, April 1, 2005
Room 2006 (Moscone West)
10:15 AM *E11.1
Three Dimensional Hydrogen Microscopy in Diamond. Guenther Dollinger, Fakultat fur Luft - und Raumfahrttechnik, Institut fur Angewandte Physik und Messtechnik, Neubiberg, Germany.
10:45 AM E11.2
Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers. Kay Dornich, T. Hahn and J. R. Niklas; Experimentelle Physik, Technical University Bergakademie, Freiberg, Germany.
11:00 AM E11.3
A
Pulsed EDMR Study of Charge Trapping at Pb Centers. Felice
Friedrich, Christoph Boehme and Klaus Lips; Silizium-Photovoltaik,
Hahn-Meitner-Institut, Berlin, Germany.
11:15 AM E11.4
Electrical Characterization of MOS Structures
and Wide Bandgap Semiconductors by Scanning
Kelvin Probe Microscopy. Seong-Eun
Park1, Stoyan Jeliazkov1,
Joseph J. Kopanski1, John Suehle1,
Eric Vogel1, Albert Davydov2 and
Hyun-Keel Shin3; 1Semiconductor
Electronics Division, National Institute
of Standards and Technology, Gaithersburg,
Maryland; 2Metallurgy Division,
National Institute of Standards and Technology,
Gaithersburg, Maryland; 3Gwangju
Techno Park, LED/LD Packaging Service Center,
958-3 Daechon-dong, Buk-gu, Gwangju 500-706,
South Korea.
E11.5
ABSTRACT WITHDRAWN.
11:30 AM E11.6
Cavity Ring-Down Spectroscopy on Thin Films: Absolute and Highly-Sensitive Detection of Defect-Related Absorptions. I. M. P. Aarts, B. Hoex, W. M. M. Kessels and M. C. M. van de Sanden; Applied Physics, Eindhoven University of Technology, Eindhoven, Noord-Brabant, Netherlands.
Symposium Organizers
S. Ashok
The Pennsylvania State University
212 Earth and Engineering Science Bldg.
University Park, PA 16802
Tel: 814-863-4588
Fax: 814-865-9974
sashok@psu.edu |
J. Chevallier
CNRS-Laboratoire de Physique des Solides et de Cristallogénèse
1 pl. Aristide Briand
92195 Meudon Cedex, France
Tel: 33-1-4507-5340
Fax: 33-1-4507-5841
jacques.chevallier@cnrs-bellevue.fr |
B. L. Sopori
National Renewable Energy Laboratory
1617 Cole Blvd.
Golden, CO 80401
Tel: 303-384-6683
Fax: 303-384-6684
bhushan_sopori@nrel.gov |
M. Tabe
Shizuoka University
Research Institute of Electronics
3-5-1 Johoku
Hamamatsu 432-8011, Japan
Tel: 81-53-478-1307
Fax: 81-53-478-1651
romtabe@rie.shizuoka.ac.jp |
P. Kiesel
Palo Alto Research Center
3333 Coyote Hill Rd.
Palo Alto, CA 94304
Tel: 650-812-4178
Fax: 650-812-4105
peter.kiesel@parc.com |
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