Chairs
| Rana Biswas |
|
Iowa State University |
| Reinhard Carius |
|
Forschungszentrum Juelich, IPV |
| Robert Collins |
|
University of Toledo |
| Michio Kondo |
|
NAIST |
| P. Craig Taylor |
|
University of Utah |
Symposium Support
National Renewable Energy Laboratory
Palo Alto Research Center
United Solar Ovonic LLC
Voltaix, Inc.
Proceedings to be published in
both book form and online
(see ONLINE PUBLICATIONS at www.mrs.org)
as volume 862
of the Materials Research Society
Symposium Proceedings Series.
* Invited paper
TUTORIAL
Thin-Film Silicon Materials & Devices for Large-Area and
Flexible Electronics
Monday March 28, 2005
8:30 AM - 4:30 PM
Room 2002 (Moscone West)
Hydrogenated
amorphous silicon (e-Si:H) and nano0 or polycrystalline silicon
(e-Si, poli-Si) are the semiconductors used for large-area
electronics. They are applied to the thin-film solar cells,
active matrix liquid crystall displays (AM-LCDs), optical scanner,
and radiation imaging arrays. The tutorial describes materials
growth and preparation, basic materials properties, device
physics, and applications. Attention is given to state-of-the
art, low-temperature processing. Special emphasis will be on
the relation between materials properties and device performance.
Existing and emerging applications will be presented and discussed.
Instructors:
Siguard Wagner, Princeton University
Jaoa Pedro Conde, Instituto Superior Tecnico
SESSION A1: Pioneers in the Use of Photons to Study Films
Chair: Reinhard Carius
Tuesday Morning, March 29, 2005
Room 2002 (Moscone West)
8:30 AM *A1.1
The Electronic Structure of a-Si:H as Measured by Photoelectron
Spectroscopy. Lothar Ley, Institut fuer Technische
Physik II, Universitaet Erlangen-Nuernberg, Erlangen, Germany.
9:00 AM *A1.2
Photothermal Deflection Spectroscopy: Past, Present and
Future. Warren Jackson, Hewlett Packard Labs, Palo
Alto, California.
9:30 AM *A1.3
Urbach Edge, Disorder, and Absorption On-set in a-Si:H. George Cody, Aerospace and Mechanical Engineering, Visiting Professor, Rutgers University-Piscataway, Princeton, New Jersey.
10:00 AM BREAK
SESSION A2: Growth I: Large Grains and Epitaxy
Chair: Ruud Schropp
Tuesday Morning, March 29, 2005
Room 2002 (Moscone West)
10:30 AM A2.1
Large-Grained Polycrystalline Films for Photovoltaic Devices.
Christine Esber Richardson and Harry A. Atwater; Thomas
J. Watson Laboratory of Applied Physics, California Institute
of Technology, Pasadena, California.
10:45 AM A2.2
Suppression of Nucleation during the Aluminum-Induced Layer
Exchange Process. Jens Schneider, Juliane Klein,
Andrey Sarikov, Martin Muske, Stefan Gall and Walther Fuhs;
Hahn-Meitner-Institut,
Berlin, Germany.
11:00 AM A2.3
Improved Low-Temperature Silicon Homoepitaxy by Ta-Filament
Hot-Wire Chemical Vapor Deposition. Charles Teplin,
Eugene Iwaniczko, Dean H. Levi, Joel Pankow, Kim M. Jones, Qi
Wang and Howard M. Branz; NREL, Golden, Colorado.
11:15 AM A2.4
Application of Field-Enhanced Rapid Temperature Annealing
to Activation of Doped Polycrystalline Si Thin Films. B.
S. So1, Y. H. You1, Y. H. Kim1,
J. H. Hwang1, D. H. Shin2, S.
R. Ryu2, K. Choi3 and Y. C. Kim4;
1Dept. of Materials Sci. & Eng., Hongik University,
Seoul, South Korea; 2Viatron Technologies, Seoul,
South Korea; 3KICET, Seoul, South Korea; 4Korea
University of Technology and Education, Chunan, South Korea.
11:30 AM A2.5
Structural Properties of Laser-Crystallized Polycrystalline
SiGe Thin Films. Moshe Weizman1, Norbert
H. Nickel1, Ina Sieber1 and Baojie Yan2;
1Hahn-Meitner-Institut, Berlin, Germany; 2United
Solar Systems Corp., Troy, Michigan.
11:45 AM A2.6
Ge Growth on Nanostructured Silicon Surfaces. Ganesh
Vanamu1, Abhaya K. Datye1 and Saleem
H. Zaidi2; 1Chemical and Nuclear, University
of New Mexico, Albuquerque, New Mexico; 2Gratings,
Inc., Albuquerque, New Mexico.
SESSION A3: The Roles of Hydrogen
Chair: Pauls Stradins
Tuesday Afternoon, March 29, 2005
Room 2002 (Moscone West)
1:30 PM A3.1
First-Principles Analysis of Growth Precursor Diffusion
on Surfaces of Plasma-Deposited Silicon Thin Films. Tamas
Bakos, Mayur S. Valipa and Dimitrios Maroudas; Chemical
Engineering, University of Massachusetts, Amherst, Massachusetts.
1:45 PM A3.2
The Role of SiH3 Diffusion in Determining the
Surface Smoothness of Plasma-Deposited Amorphous Si Thin Films:
An Atomic-Scale Analysis. Mayur S. Valipa1,2,
Tamas Bakos1, Eray S. Aydil2 and Dimitrios
Maroudas1; 1Chemical Engineering, University
of Massachusetts, Amherst, Massachusetts; 2Chemical
Engineering, University of California, Santa Barbara, Santa
Barbara, California.
2:00 PM A3.3
Experimental Evidence for Extended Hydrogen Diffusion in
Amorphous Silicon During Light-Soaking. Kail Fatiha1,2,
Fellah Samira1, Hadjadj Aomar2 and Roca
i Cabarrocas Pere1; 1Laboratoire de Physique
des Interfaces et des Couches Minces, Ecole Polytechnique, 91128
Palaiseau, French Polynesia; 2Laboratoire d'Analyse
des Solides, Surfaces et Interfaces, Unite de Thermique et Analyse
Physique, Universite de Reims, 51687 Reims Cedex 2, France.
2:15 PM A3.4
Initial Stage Hydrogen Movement in Hot-Wire Deposited SiNx:H
During High-Temperature Annealing. Hanno D. Goldbach1,
Andrea Scarfo1, Vasco Verlaan1, Karine
van der Werf1, Wim Arnold Bik1, Henk Ch.
Rieffe2, Ingrid G. Romijn2, Wim J. Soppe2,
Arthur W. Weeber2 and Ruud E. I. Schropp1;
1Utrecht University, Debye Institute - SID, Utrecht,
Netherlands; 2ECN, Solar Energy, Petten, Netherlands.
2:30 PM A3.5
Hydrogen Bonding in Amorphous and Polycrystalline SiGe Alloys.
Norbert H. Nickel1, Ina Sieber1,
Moshe Weizman1 and B. Yan2; 1Hahn-Meitner-Institut
Berlin, Berlin, Germany; 2United Solar Ovonic Corporation,
Troy, Michigan.
2:45 PM BREAK
SESSION A4: Nanostructures
Chair: Harry Atwater
Tuesday Afternoon, March 29, 2005
Room 2002 (Moscone West)
3:15 PM A4.1
Conductance Fluctuations in Amorphous Silicon Nanoparticles.
T. James Belich1, Z. Shen2, Charles Blackwell1,
Steve Campbell2 and James Kakalios1;
1School of Physics and Astronomy, University of
Minnesota, Minneapolis, Minnesota; 2Dept. of Electrical
and Computer Engineering, University of Minnesota, Minneapolis,
Minnesota.
3:30 PM A4.2
Field
Emission Studies of Silicon Nanowires Grown by Vapor-Liquid-Solid
(VLS) Technique. Niraj Narasinha Kulkarni1,
Joonho Bae2 and Chih-Kang Shih2,1; 1Materials
Science & Engineering, University of Texas at Austin, Austin,
Texas; 2Department of Physics, University of Texas
at Austin, Austin, Texas.
3:45 PM A4.3
High-Yield Synthesis of Luminescent Silicon Quantum Dots
in a Continuous Flow Nonthermal Plasma Reactor. Uwe
R. Kortshagen, Lorenzo Mangolini and Elijah Thimsen;
Mechanical Engineering, University of Minnesota, Minneapolis,
Minnesota.
4:00 PM A4.4
Electrodeposition of Nanoscale Germanium and Silicon in Ionic
Liquids. Frank Endres, Technical University of Clausthal,
Clausthal-Zellerfeld, Germany.
4:15 PM A4.5
Wiring and Introduction of Single Silicon Nanocrystals into
Multi-Wall Carbon Nanotubes. Vladimir Svrcek1,
Francois Le Normand2, Ovidiou Ersen2,
Cuong Phan-Huu1, Dominique Begin1, Benois
Louis1, Jean-Claude Muller3 and Marc J.
Ledoux1; 1LMSPC-ECPM, Strasbourg, France; 22IPCMS,
Strasbourg, France; 3CNRS-PHASE, Strasbourg, France.
4:30 PM A4.6
Thermal Transport in Nanocrystalline Silicon. Arun
Bodapati1, Pawel Keblinski1 and
Patrick Schelling2; 1Materials Science,
Rensselaer Polytechnic Institute, Troy, New York; 2Physics,
University of Central Florida, Orlando, Florida.
4:45 PM A4.7
Multi-Scale Growth Study of Vacuum Evaporated a-Si Nanostructured
Thin Films. Aram Amassian1, Kate Kaminska2,
Motofumi Suzuki3, Ludvik Martinu1 and
Kevin Robbie2; 1Regroupement Quebecois
pour les Materiaux de Pointe (RQMP) and Department of Engineering
Physics, Ecole Polytechnique de Montreal, Montreal, Quebec,
Canada; 2Department of Physics, Queen's University,
Kingston, Ontario, Canada; 3Department of Engineering
Physics and Mechanics, Graduate School of Engineering,
Kyoto
University, Kyoto, Japan.
SESSION A5: Poster Session: Characterization--Nano, Micro,
Poly-crystalline Films
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
A5.1
Instabilities and Temperature Dependence of Photoelectronic
Properties of Microcrystalline Silicon. Rudolf Bruggemann,
Institut fur Physik, Carl von Ossietzky Universitat Oldenburg,
Oldenburg, Germany.
A5.2
ABSTRACT WITHDRAWN
A5.3
Microstructural Analysis of Nickel-Mediated Crystallized
Poly Silicon by Chemical Etching, AFM, EBSD and HRTEM. Samick
Son1, MyungKyu Park1, Nari Ahn1,
Ilsang Choi1, Jinwook Seo2 and Jaehak
Lee1; 1Materials Analysis Team, Corporate
R&D Center, Samsung SDI Co, Yongin, Gyeonggi-do, South Korea;
2Tech. Development Team 1, Corporate R&D Center,
Samsung SDI Co, Yong In, Gyeonggi-do, South Korea.
A5.4
Effects of Post Annealing and Material Stability on Undoped
and n+ nc-Si:H Films Deposited at 75 °C Using
13.56 MHz PECVD. Czang-Ho Lee, Andrei Sazonov and
Arokia Nathan; ECE, University of Waterloo, Waterloo, Ontario,
Canada.
A5.5
Study of Steady State Photoconductivity in Highly Crystallized
Doped and Undoped Microcrystalline Si Films. Sanjay
Ram1,2,
Satyendra Kumar1,2, P. Rocca i Cabarrocas3,
R. Vanderhaghen3 and B. Drevillon3; 1Physics,
Indian Institute of Technology, Kanpur, Kanpur, Uttar Pradesh,
India; 2Samtel Centre for Display Technologies,
Indian Institute of Technology Kanpur, Kanpur-208016, Uttar
Pradesh,
India; 3Laboratoire de Physique des Interfaces et
des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique,
91128 Palaiseau Cedex, France.
A5.6
Transport and Meyer-Neldel Rule in Microcrystalline Silicon
Films. Steve Reynolds1, Vladimir Smirnov1,
Friedhelm Finger2, Charles Main3 and
Reinhard Carius2; 1EPICentre, University
of Abertay Dundee, Dundee, United Kingdom; 2IPV,
Forschungszentrum Juelich, Juelich, Germany; 3Dept
of Elec Eng and Physics, University of Dundee, Dundee, United
Kingdom.
A5.7
Cesium/Xenon Dual Beam Depth Profiling, A New Approach for
Semi-Quantitative Depth Profiles with ToF-SIMS: Influence
of
The Sputtering Parameters On The Cesium Surface Concentration.
Jeremy Brison and Laurent Houssiau; University of Namur,
Namur, Belgium.
A5.8
Characterization of Silicon Thin Film Deposited by E-Beam
Evaporator for Flexible Display. In-Hyuk Song, Sang-Myeon
Han, Joong-Hyun Park and Min-Koo Han; School of Electrical
Engineering, Seoul National University, Seoul, South Korea.
SESSION A6: Poster Session: Growth--Large Grains and Epitaxy
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
A6.1
In and Ex Situ Correlation of Stress to Microstructures during
Al-Induced Crystallization of PECVD Amorphous Silicon. Solomon
Ray, Yaguang Lian, Derald J. Tucker and Grant Z. Pan; Microfabrication
Laboratory, University of California at Los Angeles, Los Angeles,
California.
A6.2
Poly-Crystalline Silicon-Germanium Thin Films Prepared by
the Multi-Target RF Sputtering System. Toru Ajiki,
Isao Nakamura and Masao Isomura; Tokai University, Kanagawa,
Japan.
A6.3
Control of the Crystal Orientation in Metal-Induced Lateral
Crystallization. Min-Sun Kim, Yeo-Gun Yoon, Young-Su
Kim and Seung-Ki Joo; School of Materials Science and Engineering,
College of Engineering, Seoul National University, Seoul, South
Korea.
A6.4
Laser Crystallization of Compensated Hydrogenated Amorphous
Silicon Thin Films. Rosari Saleh1, Norbert
H. Nickel2 and Karsten von Maydell2; 1Fisika,
Fakultas MIPA, Universitas Indonesia, Depok, Indonesia; 2Hahn-Meitner-Institut,
Berlin, Germany; 3Hahn-Meitner-Institut, Berlin,
Germany.
A6.5
Poly-Crystalline Ge Thin Films Prepared by RF Sputtering
Method for Thermo-Photo-Voltaic Application. Daisuke
Hoshi, Isao Nakamura and Masao Isomura; Tokai University,
Kanagawa, Japan.
A6.6
TCAD Modeling of Metal Induced Lateral Crystallization of
Amorphous Silicon. Aleksey M. Agapov1, Valeri
V. Kalinin1, Alexandre M. Myasnikov1
and Vincent M. C. Poon2; 1Institute of
Semiconductors Physics, Novosibirsk, Russian Federation; 2Hong
Kong University of Science and Technology, Hong Kong.
A6.7
Electron Field Emission from SiC/Si Heterostructures Formed
by Carbon Implantation into Silicon and Etching of the Top
Silicon
Layer. Yumei Xing, Yuehui Yu and Jihua Zhang; Shanghai
Institute of Microsystem and Information Technology, Chinese
Academy of Sciences, Shanghai, China.
A6.8
Electron Field Emission from Laser Crystallized HWCVD and
PECVD Thin Silicon Films. M. Z. Shaikh, Kevin O'Neill,
Saydullah Persheyev and Mervyn J. Rose; Electronic Engineering
and Physics Division, University of Dundee, Dundee, United Kingdom.
A6.9
GaAs Growth on Micro and Nano Patterned Ge/ Si1-XGeX and
Si Surfaces. Ganesh Vanamu1, Abhaya K.
Datye1, Ralph Dawson2 and Saleem H. Zaidi3;
1Chemical and Nuclear, University of New Mexico,
Albuquerque, New Mexico; 2Center for High Technology
Materials, University of New Mexico, Albuquerque, New Mexico;
3Gratings, Inc., Albuquerque, New Mexico.
SESSION A7: Poster Session: Metastability
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
A7.1
Light-Intensity Dependence of the Staebler-Wronski Effect
in a-Si:H with Various Densities of Defects. Minoru Kumeda1,
Ryohei Sakai1, Akiharu Morimoto1 and Tatsuo
Shimizu2; 1Div. Electrical Engineering
and Computer Science, Grad. School of Natural Sci. and Tech.,
Kanazawa Univ., Kanazawa, Japan; 2NTT Microsystem
Integration Labs., Atsugi, Japan.
A7.2
Electronic Properties of Improved Amorphous Silicon-Germanium
Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor
Deposition Process. Shouvik Datta1, David
Cohen1, Don L. Williamson2, Yueqin Xu3
and Harv Mahan3; 1Physics, University
of Oregon, Eugene, Oregon; 2Physics, School of Mines,
Golden, Colorado; 3National Renewable Energy Laboratory,
Golden, Colorado.
SESSION A8: Poster Session: Nanostructure
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
A8.1
Experimental Study of Silane Plasma Nanoparticle Formation
in Amorphous Silicon Thin Films. Siri Thompson2,
Chris R. Perrey3, Thomas James Belich1,
Charles Blackwell1, C. Barry Carter3,
James Kakalios1 and Uwe Kortshagen2;
1Physics, University of Minnesota, Minneapolis,
Minnesota; 2Mechanical Engineering, University
of Minnesota, Minneapolis, Minnesota; 3Chemical
Engineering and Materials Science, University of Minnesota,
Minneapolis, Minnesota.
A8.2
Transferred to A4.2
A8.3
Study of the Oxidation of Polycrystalline SiGe: Formation
of Ge Nanocrystals and Their Related Luminescence. Carmelo
Prieto1, Manuel Avella1, Juan
Jimenez1,
Andres Rodriguez2, Jesus Sangrador2,
Tomas Rodriguez2 and Andreas Kling4,3;
1Fisica Materia Condensada, Universidad de Valladolid,
Valladolid, Spain; 2Tecnologia Electronica, Universidad
Politecnica de Madrid, Madrid, Spain; 3Centro
Fisica Nucleare, Universidade da Lisboa, Lisboa, Portugal; 4Instituto
Tecnologico e Nuclear, Sacavem, Portugal.
A8.4
Thermal and Laser Annealing of Si Nanocrystals, Implanted
with B and P Ions. Gregory A. Kachurin1,
S. G. Cherkova1, V. A. Volodin1, D.
V. Marin1, V. G. Kesler1, A. K. Gutakovsky1,
D. I. Tetelbaum2 and H. Becker3; 1Institute
of Semiconductor Physics, Novosibirsk, Russian Federation;
2Nizhegorodsky State University, Nizhnij Novgorod,
Russian Federation; 3Laser Zentrum Hannover, Hannover,
Germany.
A8.5
Experimental Evidence of Direct Recombination in Nanocrystalline
Silicon Quantum Dots. Tae-Youb Kim1,
Nae-Man Park1, Kyung-Hyun Kim1, Kwan
Sik Cho1, Gun Yong Sung1 and Kyoungwan
Park2; 1Future Technology Research
Division, Electronics and Telecommunications Research
Institute, Daejeon,
South Korea; 2Nano Science & Technology, Univ.
of Seoul, Seoul, South Korea.
A8.6
Fabrication of One-Dimensional Silicon Nano-Wires Based
on Proximity Effects of Electron-Beam Lithography. Shu-Fen
Hu, National Nano Device Laboratories, Hsinchu, Taiwan.
A8.7
Charging Effect of a Nc-Si in a SiO2 Layer with Respect
to the Post-Sharpening Steps Using Scanning Capacitance Microscopy.
S. H. Jin1, Y. Khang2, J. M.
Son1, E. K. Lee1, J. M. Kim3,
M. K. Choi3, Eunhye Lee2, Kyoyeol Lee4,
Joohyun Lee4, Y. S. Kim3 and C. J. Kang1;
1Physics, Myongji University, Yongin, Gyeonggido,
South Korea; 2Devices Lab, Samsung Advanced Institute
of Technology, Yongin, Gyeonggido, South Korea; 3Electrical
Engineering, Myongji University, Yongin, Gyeonggido, South
Korea; 4Materials Lab, Samsung Advanced Institute
of Technology, Yongin, Gyeonggido, South Korea.
A8.8
Formation of Antimony 1D-Nanostructures on Si(5 5 12)
Surface.
S. M. Shivaprasad1, Mahesh Kumar1,
Amish G. Joshi1 and Vinod Kumar Paliwal2,1;
1Surface Physics & Nanostructures Group, National
Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi, India; 2Department
of Physics, Dyal Singh College (University of Delhi), New
Delhi, India.
A8.9
Fabrication of Silicon Nanowire Network in Aluminum Thin
Films. Vincent Liu1, Husam Abu-Safe2
and Hameed Naseem2; 1Electrical Engineering
and Computer Sciences, University of California, Berkeley,
Berkeley, California; 2Electrical Engineering,
University of Arkansas, Fayetteville, Arkansas.
A8.10
Synthesis of Fluorescent SI Nanomaterial Films from Silicate
Water Glass Solutions. Munir H. Nayfeh1,2 and
Laila Abuhassan3; 1Physics, University
of Illinois, Urbana, Illinois; 2Research Division,
NanoSi Technologies, Champaign, Illinois; 3Physics,
University of Jordan, Amman, Jordan.
A8.11
Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on
Si and SiO2. Kanji Yasui, Jyunpei Eto, Yuzuru
Narita, Masasuke Takata and Tadashi Akahane; Electrical,
Electronic
and Information, Nagaoka University of Technology, Nagaoka,
Japan.
SESSION A9: Poster Session: Novel Devices--Sensors, Diodes, etc.
Tuesday Evening, March 29, 2005
8:00 PM
Salons 8-15 (Marriott)
A9.1
Advances in Amorphous Silicon Integrated Photonics Science and Technology. Gary P. Halada1, S. Chawda1, J. A. Mawyin1, R. J. Tonucci2, A. H. Mahan3 and C. M. Fortmann4; 1Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York; 2Naval Research Laboratory, Washington, District of Columbia; 3National Renewable Energy Laboratory, Golden, Colorado; 4Department of Applied Mathematics, Stony Brook University, Stony Brook, New York.
A9.2
Spectral Sensitivity and Color Selectivity in Multilayer Stacked Devices. Paula Louro1, Fernandes Miguel1, Alessandro Fantoni1, Guilherme Lavareda2, Carlos Nunes de Carvalho2, Yuriy Vygranenko1 and Manuela Vieira1; 1DEETC, ISEL, Lisbon, Portugal; 2CFM, UTL, Lisbon, Portugal.
A9.3
Application of SC-Simul for Numerical Modeling of the Opto-Electronic
Properties of a-Si:H/c-Si Heterojunction Diodes. Rudolf
Bruggemann, Maximilian Rosch, Saioa Tardon and Gottfried
H. Bauer; Institut fur Physik, Carl von Ossietzky Universitat
Oldenburg, Oldenburg, Germany.
A9.4
Two-Dimensional a-Si:H/a-SiC:H n-i-p Sensor Array with ITO/a-SiNx Antireflection
Coating. Yuriy Vygranenko, Jeff Chang and Arokia
Nathan; Department of Electrical and Computer Engineering,
University of Waterloo, Waterloo, Ontario, Canada.
A9.5
Amorphous Silicon Based piip Structure for Color Sensor. Shibin Zhang, Leandro Raniero, Elvira Fortunato, Isabel Ferreira, Hugo Aguas and Rodrigo Martins; Material Science, Faculty of Science and Technology, New University of Lisbon and CEMOP-UNINOVA, Caprica, Portugal.
A9.6
Hydrogen Content in Silicon Nitride Films Deposited by PECVD
and Used as Support Layer and Absorber Layer for Uncooled Microbolometers. Roberto Carlos Ambrosio1, Alfonso Torres1, Andrey Kosarev1, Mauro Landa1 and Adrian Itzmoyotl1; 1Electronics, INAOE, Puebla, Puebla, Mexico; 2Electronics, INAOE, Puebla, Puebla, Mexico; 3Electronics, INAOE, Puebla, Puebla, Mexico; 4Electronics, INAOE, Puebla, Mexico; 5Electronics, INAOE, Puebla, Puebla, Mexico.
A9.7
Fabrication and Characteristics of FeSi2-Si Based Infrared Light Emission and Detection Devices. C. F. Chow1,3, S. P. Wong1,3, Y. Gao1, N. Ke1,3, Q. Li2,3, W. Y. Cheung1,3, M. A. Lourenco4 and K. P. Homewood4; 1Electronic Engineering, Chinese University of Hong Kong, Shatin, N.T., Hong Kong; 2Physics, Chinese University of Hong Kong, Shatin, N.T., Hong Kong; 3Materials Science and Technology Research Centre, Chinese University of Hong Kong, Shatin, N.T., Hong Kong; 4School of Electronics Engineering, Computer and Mathematics, University of Surrey, Guildford, Surrey, United Kingdom.
A9.8
A Comparison of Light Soaking Effects Between Porous Silicon
and a-Si:H. S. C. Agarwal and N. P. Mandal; Physics, I.I.T. Kanpur, Kanpur, U.P., India.
A9.9
Effect of Post-Oxidation of Silicon Nanocrystals as a Floating Gate of Nonvolatile Memory. Jung Min Kim1, Min Ki Choi1, Y. Khang2, E. K. Lee3, Eun Hye Lee2, Kyo Yeol Lee2, Joo Hyun Lee2, C. J. Kang3 and Y. S. Kim1; 1Electrical Engineering, Myongji Univ., Yongin, Gyeonggi-Do, South Korea; 2Devices Lab., Samsung Advanced Instute of Technalogy, Suwon, Gyeonggi-Do, South Korea; 3Physics, Myongji Univ., Yongin, Gyeonggi-Do, South Korea.
SESSION A10: Growth II: Microcrystalline Films
Chair: Michio Kondo
Wednesday Morning, March 30, 2005
Room 2002 (Moscone West)
8:30 AM A10.1
Room Temperature Deposition of Nanocrystalline Si Thin Films. Radhika Chandrasekhar Mani and Eray S. Aydil; Chemical Engineering, University of California Santa Barbara, Santa Barbara, California.
8:45 AM A10.2
Growth and Properties of Nanocrystalline Ge:H Films and Devices. Vikram Dalal2 and Xuejun Niu2; 1Elec. and Comp. Engr., Iowa State University, Ames, Iowa; 2Electrical and Computer Engr., Iowa State University, Ames, Iowa.
9:00 AM A10.3
Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by VHF PECVD. Aad Gordijn, Jeroen Francke, Jatindra Kumar Rath and Ruud E. I. Schropp; Debye Institute, SID-Physics of Devices, Utrecht University, Utrecht, Netherlands.
9:15 AM A10.4
'Seed-Layers' for the Preparation of Hydrogenated Microcrystalline Silicon with Defined Structural Properties on Glass. Christoph Ross, Yaohua Mai, Reinhard Carius and Friedhelm Finger; Institut fuer Photovoltaik, Forschungszentrum Juelich, Juelich, Germany.
9:30 AM A10.5
Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon
Films. David L. Young, Paul Stradins, Banasri Roy,
Eugene Iwaniczko, Bobby To, Bob Reedy, David Ginley, Howard
M. Branz and Qi Wang; National Renewable Energy Laboratory,
Golden, Colorado.
9:45 AM A10.6
Low Substrate Temperature Deposition of Crystalline SiC
Using HWCVD. Stefan Klein1, Reinhard Carius1,
Friedhelm Finger1 and Lothar Houben2; 1Institut
fuer Photovoltaik, Forschungszentrum Juelich, Juelich, Germany; 2Institut
fuer Festkoerperforschung, Forschungszentrum Juelich, Juelich,
Germany.
10:00 AM BREAK
SESSION A11: Solar Cells I: Stability
Chair: Christopher Wronski
Wednesday Morning, March 30, 2005
Room 2002 (Moscone West)
10:30 AM *A11.1
Improved Stability of Hydrogenated Amorphous Silicon Solar
Cells Fabricated by Triode-Plasma CVD. Hiroshi Sonobe1,2, Aiko Sato2, Takashi Fujibayashi2, Satoshi Shimizu2, Takuya Matsui2, Akihisa Matsuda2 and Michio Kondo2; 1Mitsubishi Heavy Industries, Nagasaki, Japan; 2National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan.
11:00 AM *A11.2
Highly and Rapidly Stabilized Protocrystalline Silicon Multilayer Solar Cell. K. S. Lim and S. Y. Myong; Electrical Engineering and Computer Science, KAIST, Daejeon, South Korea.
11:30 AM A11.3
Correlation Between Powder in the Plasma and Stability of
High Rate Deposited a-Si:H. Guozhen Yue, Gautam Ganguly,
Baojie Yan, Jeffery Yang and Subhendu Guha; United Solar Ovonic
Corp., Troy, Michigan.
11:45 AM A11.4
The Nature of Native and Light Induced Defect States in
i-Layers of High Quality a-Si:H Solar Cells Derived from Dark
Forward-Bias Current-Voltage Characteristics. Jingdong Deng1, Matthew L. Albert1, Joshua M. Pearce2, Robert W. Collins3 and Christopher R. Wronski1; 1Center for Thin Film Devices, Pennsylvania State University, University Park, Pennsylvania; 2Physics Department, Clarion University of Pennsylvania, Clarion, Pennsylvania; 3Department of Physics and Astronomy, University of Toledo, Toledo, Ohio.
SESSION A12: Photonic Devices: Experiment and Theory
Chair: Richard Weisfield
Wednesday Afternoon, March 30, 2005
Room 2002 (Moscone West)
1:30 PM *A12.1
Photonic Band Gap Materials: Engineering the Fundamental Properties of Light. Sajeev John, Physics, University of Toronto, Toronto, Ontario, Canada.
2:00 PM *A12.2
Detectors at the Intersection of Photons and Electromagnetic
Fields or, Where Einstein Meets Maxwell. Blake Eliasson2 and Garret
Moddel1,2; 1Electrical & Computer
Engineering, University of Colorado, Boulder, Colorado; 2Phiar
Corporation, Boulder, Colorado.
2:30 PM A12.3
New Light Trapping in Thin Film Solar Cells Using Textured Photonic Crystals. Lirong Zeng, Yasha Yi, Ching-yin Hong, Xiaoman Duan and Lionel C. Kimerling; Materials Science and Engineering, MIT, Cambridge, Massachusetts.
2:45 PM BREAK
SESSION A13: Metastability
Chair: Rana Biswas
Wednesday Afternoon, March 30, 2005
Room 2002 (Moscone West)
3:15 PM A13.1
Effect of Fermi Level Position in Intrinsic a-Si:H on Evolution
of Defect States Under Light Exposure. Miro Zeman1, Vojtech Nadazdy1,2, Rudolf Durny3 and Wim Metselaar1; 1Delft University of Technology, Delft, Netherlands; 2Institute of Physics, Slovak Academy of Sciences, Bratislava, Slovakia; 3Slovak University of Technology, Bratislava, Slovakia.
3:30 PM A13.2
The Creation and Relaxation Kinetics of Light Induced Defects
in a-Si:H Located at Different Energies in the Gap. Matthew Louis Albert1, Jingdong Deng1, Xinwei Niu1, Joshua M. Pearce2, Robert W. Collins3 and Christopher R. Wronski1; 1Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania; 2Physics Department, Clarion University of Pennsylvania, Clarion, Pennsylvania; 3Physics Department, University of Toledo, Toledo, Ohio.
3:45 PM A13.3
Time Evolution of Defect Density in Tritiated Amorphous Silicon Determined by Transient Capacitance Techniques. Stefan Costea, Nazir P. Kherani and Stefan Zukotynski; Electrical & Computer Engineering, University of Toronto, Toronto, Ontario, Canada.
4:00 PM A13.4
Observation of a Hydrogen Doublet Site in High Defect Density
As-Grown a-Si:H by 1H NMR. David Charles
Bobela1,
Tining Su1, Craig Taylor1 and Gautam
Ganguly2; 1Physics, University of Utah,
Salt Lake City, Utah; 2United Solar Ovonics Corp,
Troy, Michigan.
4:15 PM A13.5
Image and Color Sensitive Detector Based on Double p-i-n a-SiC:H Photodiodes. Manuela Carvalho Vieira1, Miguel Fernandes1, Paula Louro1, Alessandro Fantoni1, Yuriy Vygranenko1, Guilherme Lavareda2 and Carlos Nunes Carvalho2; 1DEETC, ISEL, Lisbon, Portugal; 2CFM, UTL, Lisbon, Portugal.
4:30 PM A13.6
Light-Soaking Effects on the Open-Circuit Voltage of a-Si:H
Solar Cells. Jianjun Liang1, Eric A. Schiff1, Subhendu Guha2, Baojie Yan2 and Jeffrey Yang2; 1Physics, Syracuse University, Syracuse, New York; 2United Solar Ovonic Corp., Troy, Michigan.
4:45 PM A13.7
The Effects of Hydrogen Profiling and of Light-Induced Degradation on the Electronic Properties of Hydrogenated Nanocrystalline Silicon. Adam F. Halverson1, James J. Gutierrez1, David Cohen1, Baojie Yan2, Jeffrey C. Yang2 and Subhendu Guha2; 1Physics, University of Oregon, Eugene, Oregon; 2United Solar Ovonic Corporation, Troy, Michigan.
SESSION A14: In-situ Optical Characterization of Films I
Chair: Rob Collins
Thursday Morning, March 31, 2005
Room 2002 (Moscone West)
8:30 AM *A14.1
Application of Spectroscopic Ellipsometry and Infrared Spectroscopy
for the Real-Time Control and Characterization of a-Si:H Growth
in a-Si:H/c-Si Heterojunction Solar Cells. Hiroyuki Fujiwara and Michio Kondo; National Institute of Advanced Industrial Science and Technology, Tsukuba-shi, Ibaraki, Japan.
9:00 AM *A14.2
Real-Time Spectroscopic Ellipsometry as an in-situ Probe
of the Growth Dynamics of Amorphous and Epitaxial Crystal Silicon
for Photovoltaic Applications. Dean H. Levi, C.
W. Teplin, E. Iwaniczko, Y. Yan, Q. Wang, T. H. Wang and H.
M. Branz; National Renewable Energy Laboratory, Golden, Colorado.
9:30 AM *A14.3
Novel in situ and Real Time Optical Probes to Detect (Surface)
Defect States of a-Si:H. W. M. M. Kessels, Dept.
of Applied Physics, Eindhoven Univ. of Technology, Eindhoven,
Netherlands.
10:00 AM BREAK
SESSION A15: Transport and Recombination - Novel Devices
Chair: Eric Schiff
Thursday Morning, March 31, 2005
Room 2002 (Moscone West)
10:30 AM A15.1
New Insights into the Recombination Mechanism of Amorphous
Silicon. Klaus Lips and Christoph Boehme; Silizium-Photovoltaik, Hahn-Meitner-Institut, Berlin, Germany.
10:45 AM A15.2
Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent
Effects : Time-Of-Flight Simulations for a-Si:H. Jesse Maassen1, Arthur Yelon1, Louis-Andre Hamel2 and Wen Chao Chen3; 1Department of Engineering Physics, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada; 2Department of Physics, University of Montreal, Montreal, Quebec, Canada; 3ANIQ R&D Ltd., Montreal, Quebec, Canada.
11:00 AM A15.3
Computer Modelling of Non-Equilibrium Multiple-Trapping
and Hopping Transport in Amorphous Semiconductors. Charles Main1, Joe Marshall2, Steve Reynolds3 and Mervyn Rose1; 1Division of Electronic Engineering and Physics, University of Dundee, Dundee, United Kingdom; 2University of Wales Swansea, Swansea, United Kingdom; 3University of Abertay Dundee, Dundee, United Kingdom.
11:15 AM A15.4
Radiation Hard Amorphous Silicon Particle Sensors. Nicolas Wyrsch1, Clement Miazza1, Sylvain Dunand1, Arvind Shah1, Christophe Ballif1, Matthieu Despeisse2, Danielle Moraes2 and Pierre Jarron2; 1IMT, University of Neuchatel, Neuchatel, Switzerland; 2CERN, Geneva, Switzerland.
11:30 AM A15.5
Low Temperature Thin-Film Silicon Diodes for Consumer Electronics. Qi Wang1, Scott Ward1, Anna Duda1, Jian Hu4, Paul Stradins1, Richard Crandall1, Howard M. Branz1, Jeffery Frank3, Hao Lou2, Craig Perlov2, Warren Jackson2, Ping Mai2 and Carl Taussig2; 1NREL, Golden, Colorado; 2HP Lab, Palo Alto, California; 3ITFI, Ames, Iowa; 4MVsystem, Golden, Colorado.
11:45 AM A15.6
Effect of the Load Resistance in the Linearity and Sensitivity
of Position Sensitive Detectors. Hugo Aguas, Luis
Pereira, Leandro Raniero, Elvira Fortunato and Rodrigo Martins;
Ciencia dos Materiais, Universidade Nova de Lisboa, Caparica,
Portugal.
SESSION A16: In-situ Optical Characterization of Films II
Chair: Erwin Kessels
Thursday Afternoon, March 31, 2005
Room 2002 (Moscone West)
1:30 PM A16.1
Real Time Monitoring of the Crystallization of Hydrogenated
Amorphous Silicon and its Alloys. Paul Stradins,
David Young, Yueqin Xu, Howard M. Branz and Qi Wang; National
Renewable Energy Laboratory, Golden, Colorado.
A16.2
Abstract Withdrawn
1:45 PM A16.3
Development of Deposition Phase Diagrams for Thin Film
Si1-xGex:H Using Real Time Spectroscopic
Ellipsometry. N. J. Podraza1, G. M.
Ferreira2, C. R. Wronski2 and R. W.
Collins1; 1Department of Physics and
Astronomy, The University of Toledo, Toledo, Ohio; 2Department
of Electrical Engineering and Center for Thin Film Devices,
The Pennsylvania State University, University Park, Pennsylvania.
2:00 PM A16.4
Surface Diffusion Processes During a-Si:H Growth: Temperature
Dependent Study of the Surface Roughness Evolution. Johan
P. M. Hoegnagels, Erwin W. M. M. Kessels and Richard M.
C. M. van de Sanden; Applied Physics, Eindhoven University,
Eindhoven, Netherlands.
2:15 PM A16.5
Low-to-Medium Energy Ion Bombardment Effects on Interface
Formation During Thin Film Growth in Plasma-CVD Environment.
Aram Amassian, Patrick Desjardins and Ludvik Martinu;
Regroupement Quebecois sur les Materiaux de Pointe (RQMP)
and Department of Engineering Physics, Ecole Polytechnique
de Montreal, Montreal, Quebec, Canada.
2:30 PM BREAK
SESSION A17: Thin Film Transistors
Chair: Joao P. Conde
Thursday Afternoon, March 31, 2005
Room 2002 (Moscone West)
3:15 PM A17.1
Low-Temperature a-Si:H Thin-Film Transistor Backplanes on
Flexible Substrates by Digital Lithography. William S. Wong, Rene Lujan, Steven E. Ready, Juergen Daniel and Robert A. Street; Electronic Materials Laboratory, Palo Alto Research Center, Palo Alto, California.
3:30 PM A17.2
SiNx Stress Control for Overlay Registration in a-Si:H TFTs on Flexible Foil Substrates. I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm and Sigurd Wagner; Electrical Engineering, Princeton University, Princeton, New Jersey.
3:45 PM A17.3
Fabrication of Polycrystalline Silicon Thin Film Transistors (Poly-Si TFTs) in Array Module using Field Aided Lateral Crystallization (FALC) Process. Hyunchul Kim, Hyun-Woong Chang and Duck-Kyun Choi; Ceramic Engineering, Hanyang University, Seoul, South Korea.
4:00 PM A17.4
Electrolyte-Gate a-Si:H Thin Film Transistors. Dina Goncalves1,2, D. M. F. Prazeres2, V. Chu1 and J. P. Conde1,3; 1INESC Microsystems and Nanotechnologies, Lisbon, Portugal; 2Center of Biological and Chemical Engineering, Instituto Superior Tecnico, Lisbon, Portugal; 3Department of Chemical Engineering, Instituto Superior Tecnico, Lisbon, Portugal.
4:15 PM A17.5
High Electron Mobility (~120 cm2/Vs) PECVD Nanocrystalline Silicon Top-Gate TFTs at 260 oC. Czang-Ho Lee, Andrei Sazonov and Arokia Nathan; ECE, University of Waterloo, Waterloo, Ontario, Canada.
4:30 PM A17.6
Investigation of the Effects of X-ray Irradiation of Polycrystalline Silicon, Thin Film Transistors. Yixin Li, Larry E. Antonuk, Hong Du, Youcef El-Mohri, Amit Sawant, Yi Wang, Jin Yamamoto and Qihua Zhao; Department of Radiation Oncology, University of Michigan, Ann Arbor, Michigan.
4:45 PM A17.7
Effect of Channel Doping on Low Temperature Polycrystalline Silicon Thin-Film Transistors. Daechul Choi, Myeong-Seob So, Byoungdeog Choi, Inbok Song and Hokyoon Chung; Corporate Research and Developement Center, Samsung SDI, Kyoungki, South Korea.
SESSION A18: Poster Session: Characterization--a-Si:H and Alloys B
Thursday Evening, March 31, 2005
8:00 PM
Salons 8-15 (Marriott)
A18.1
Stark Splitting in Photoluminescence Spectra of Er in a-Si:H. Minoru
Kumeda1, Mitsuo Takahashi1, Akiharu
Morimoto1 and Tatsuo Shimizu2; 1Division
of Electrical Engineering and Computer Science, Graduate School
of Natural Science and Technology, Kanazawa University, Kanazawa,
Japan; 2NTT Microsystem Integration Labs., Atsugi,
Japan.
A18.2
PECVD Grown Polymorphous Hydrogenated Silicon (pm-Si:H)
Studied Using Current Transient Spectroscopies in PIN Diodes. Vibha Tripathi1,2, Yashowanta N. Mohapatra1 and Pere Roca i Cabarrocas2; 1Physics, IIT Kanpur, Kanpur, UP, India; 2LPICM, Ecole Polytechnique, Palaiseau Cedex, France.
A18.3
Characterization of Amorphous Silicon by SIMS. Yupu
Li, Shaw Wang and Xue-Feng Lin; Charles Evans & Associates,
Sunnyvale, California.
A18.4
A Comprehensive Kinetic Model for Silicon Germanium Wet Oxidation. Mohamed A. Rabie1, Yaser M. Haddara1 and Jacques Carette2; 1Electrical and Computer Engineering, McMaster University, Hamilton, Ontario, Canada; 2Computing and Software, McMaster University, Hamilton, Ontario, Canada.
A18.5
AFM Morphology Study of a-Si1-yGey Films Deposited by LF PE CVD from Silane-Germane with Different Dilution. Liborio Sanchez1, Andrey Kosarev1, Alfonso Torres1, Thomas E. Felter2 and Alexander Ilinskii3; 1Electronics, Inst.Astrophysics, Optics and Electronics, Puebla, Puebla, Mexico; 2Lawrence Livermore National Laboratory, Livermore, California; 3Benemerita Universidad Autonoma de Puebla, Puebla, Puebla, Mexico.
A18.6
Change of the Structure of Nd Doped Amorphous SiN Thin Films After Annealing as Analysed by Electron Microscopy. Daniel Biggemann1, Saule Aldabergenova2, Horst Strunk2 and Leandro Tessler1; 1State University of Campinas, Campinas, Brazil; 2Erlangen-Nuernberg University, Erlangen, Germany.
A18.7
Optical Properties of Amorphous Silicon-Yttrium Films. Tetyana Victrobna Semikina1 and A. N. Shmyryeva2; 1Teikyo University of Science & Technology, Kitatsuru-gun, Yamanashi-pref., Japan; 2National Technical University of Ukraine, Kiev, Ukraine.
SESSION A19: Poster Session: Growth--Microcrystalline and Nanocrystalline Films
Thursday Evening, March 31, 2005
8:00 PM
Salons 8-15 (Marriott)
A19.1
Fabrication of Nano-Crystalline Porous Silicon on Si Substrates by a Plasma Enhanced Hydrogenation Technique. Yaser Abdi1,2, Pouya Hashemi1, Fatemeh Dehghan Nayeri1, Ashkan Behnam1, Shamseddin Mohajerzadeh1, Javad Koohsorkhi1,2, M. D. Robertson3 and E. Arzi2; 1ECE Department, Thin Film Lab, University of Tehran, Tehran, Iran; 2Department of Physics, University of Tehran, Tehran, Iran; 3Department of Physics, Acadia University, Wolfville, Nova Scotia, Canada.
A19.2
CO2 Laser Annealing Synthesis of Silicon Nanocrystals Buried in Si-rich SiO2. Chun-Jung Lin1, Yu-Lun Chueh2, Li-Jen Chou2 and Gong-Ru Lin1; 1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan; 2Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
A19.3
High Density Plasma Processing of Microcrystalline Si Thin Films. Pooran C. Joshi, Apostolos T. Voutsas and John W. Hartzell; LCD Process Technology Laboratory, SHARP Labs of America, Inc., Camas, Washington.
A19.4
Crystallographic Study on Initial Growth Region of μc-Si with Different Preferential Orientations. Yasushi Sobajima, Tsuyoshi Sugano, Takafusa Kitagawa, Toshihiko Toyama and Hiroaki Okamoto; Department of Systems Innovation, Osaka University, Toyonaka, Osaka, Japan.
A19.5
Rapid Thermal Annealing Crystallization of a-Si:H Films
Deposited by HWCVD. B. Roy2, J. Perkins1,
M. Dabney1, C. Teplin1, J. Alleman1,
T. Kaydanova1, E. Iwaniczko1, P. Stradins1,
Q. Wang1, D. Readey2, B. To1,
Archie H. Mahan1, H. Branz1 and D. S.
Ginley1; 1NREL, Golden, Colorado; 2Colorado
School of Mines, Golden, Colorado.
A19.6
Dependence of Microcrystalline Silicon Growth on Ion Flux at the Substrate Surface in a Saddle Field PECVD. Erik Johnson, Nazir P. Kherani and Stefan Zukotynski; Electrical & Computer Engineering, University of Toronto, Toronto, Ontario, Canada.
A19.7
Pit Formation in Amorphous Si Thin Films After High Temperature
Thermal Annealing. Tyler Roschuk1,2, Jacek Wojcik1,2, Michael Flynn1,2, Othman Zalloum1,2 and Peter Mascher1,2; 1Engineering Physics, McMaster University, Hamilton, Ontario, Canada; 2Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada.
A19.8
Growth of "New Form" of Poly-Si Thin Films Synthesized by
Ceramics Hot-Wire CVD. Abdul Rafik Middya1, Jian-Jun Liang2 and Kartik Ghosh3; 1Physics, Syracuse University, Syracuse, New York; 2Physics, Syracuse University, Syracuse, New York; 3Physics, Astronomy and Materials Science, Southwest Missouri State University, Springfield, Missouri.
A19.9
Nanocrystalline-Si Thin Film Deposited by Inductively Coupled
Plasma Chemical Vapor Deposition (ICP-CVD) at 150oC. Sang-Myeon
Han, Joong-Hyun Park, Hye-Jin Lee, Kwang-Sub Shin and Min-Koo
Han; Seoul National University, Seoul, South Korea.
A19.10
ABSTRACT WITHDRAWN
A19.11
Effects of N2O Fluence on The PECVD-Grown Si-Rich
SiOx with Buried Si Nanocrystals. Chia-Yang
Chen1, Chun-Jung Lin1, Gong-Ru
Lin1, Hao-Chung Kuo1, Yu-Lun Chueh2,
Li-Jen Chou2, Chih-Wei Chang3 and Eric
Wei-Guang Diau3; 1Department of Photonics & Institute
of Electro-Optical Engineering, National Chiao Tung University,
Hsinchu, Taiwan; 2Department of Materials Science
and Engineering, National Tsing Hua University, Hsinchu, Taiwan; 3Department
of Applied Chemistry and Center for Interdisciplinary Molecular
Science, National Chiao Tung University, Hsinchu, Taiwan.
SESSION A20: Poster Session: Growth--a-Si:H and Alloys
Thursday Evening, March 31, 2005
8:00 PM
Salons 8-15 (Marriott)
A20.1
Effect of Ion Bombardment during Expanding Thermal Plasma Deposition on the a-Si:H Material Properties. Arno H. M. Smets1, Agnes M. H. N. Petit2, Vojto Nadazdy2, Erwin W. M. M. Kessels1, Rene A. C. M. M. van Swaaij2 and Richard M. C. M. van de Sanden1; 1Applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands; 2DIMES-ECTM, Delft University of Technology, Delft, Netherlands.
A20.2
Thin Films of GeC Deposited using a Unique Hollow Cathode
Sputtering Technique. Rodney Joseph Soukup1,
Natale J. Ianno1, Jason S. Schrader1 and
Vikram L. Dalal2; 1Electrical Engineering,
University of Nebraska, Lincoln, Nebraska; 2Electrical
and Computer Engineering, Iowa State University, Ames, Iowa.
A20.3
Improved Optical Loss Characteristics of PECVD SiON Films using Low Frequency Plasma. Sudipto Naskar1,2, Christopher A. Bower1, Brian R. Stoner1,2 and Jeffrey T. Glass2; 1MCNC-RDI, RTP, North Carolina; 2Duke University, Durham, North Carolina.
A20.4
The Influence of Growth Temperature on the Disorder Within Silicon Films Grown by Molecular Beam Epitaxy. L. Tay2, D. J. Lockwood2, J.-M. Baribeau2, M. Noel3, J. C. Zwinkels3, F. Orapunt1 and S. K. O'Leary1; 1Faculty of Engineering, University of Regina, Regina, Saskatchewan, Canada; 2Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada; 3Institute for National Measurement Standards, National Research Council, Ottawa, Ontario, Canada.
A20.5
Low Temperature Growth of Amorphous Silicon Films on Plastic
Substrates by Catalytic CVD Technique. Wan-Shick Hong1,
Sunghyun Lee1, Kyung Eun Lee1, Chul Lae
Cho1, Seungjin Han1, Jongman Kiim1,2,
Jangyeon Kwon2 and Youngsoo Park2; 1Electronics
Engineering, Sejong University, Seoul, South Korea; 2Samsung
Advanced Institute of Technology, Yongin-city, Kyunggi-do,
South Korea.
A20.6
Chemical Annealing of Amorphous Silicon and Silicon-Germanium Films and Devices. Vikram Dalal and Nanlin Wang; Elec. and Comp. Engr., Iowa State University, Ames, Iowa.
A20.7
Abstract Withdrawn
A20.8
Low-Temperature Deposition of Silicon Oxide Thin Films using
Alternating Exposures of SiH2Cl2 and
O3/O2. Chan-Hee Han1,
Min-Ho Chun1, Sa-Kyun Rha1, Un-Jung Kim2,
Sang-Wook Lee2, Won-Jun Lee2 and Youn-Seoung
Lee3; 1Department of Materials Engineering,
Hanbat National University, Daejeon, South Korea; 2Department
of Advanced Materials Engineering, Sejong University, Seoul,
South Korea; 3Division of Information Communication
and Computer Engineering, Hanbat National University, Daejeon,
South Korea.
SESSION A21: Poster Session: Solar Cells
Thursday Evening, March 31, 2005
8:00 PM
Salons 8-15 (Marriott)
A21.1
Development and Characterization of Transparent Conductive Oxide Materials with Low Indices of Refraction for Application in Amorphous Silicon-Based Solar Cell Technology. Scott J. Jones, Tongyu Liu, David Tsu, Joachim Doehler, Jeff Steele, Rey Capangpangan and Masat Izu; Energy Conversion Devices, Inc., Troy, Michigan.
A21.2
ABSTRACT WITHDRAWN
A21.3
Effect of P-layer Nanostructure on the Open Circuit Voltage of Amorphous Si:H Solar Cells. Wenhui Du, Xianbo Liao, Xiesen Yang and Xunming Deng; Department of Physics & Astronomy, University of Toledo, Toledo, Ohio.
A21.4
Material and Device Physics of Nanocrystalline Si Solar
Cells. Vikram Dalal, Elec. and Comp. Engr., Iowa State University, Ames, Iowa.
A21.5
Metal Induced Growth of Poly-Si Solar Cells and Silicide
Nanowires by Use of Multiple Catalyst Layers. Joondong Kim, Chunhai Ji and Wayne A. Anderson; Electrical Engineering, University at Buffalo, Buffalo, New York.
A21.6
Polyaniline/Amorphous Silicon Heterostructure Solar Cells. Weining Wang and Eric A. Schiff; Physics, Syracuse University, Syracuse, New York.
A21.7
Ultra-Shallow Junction Formed by Non-Melting Process of
Double-Pulsed DPSS Green Laser Annealing. Toshio Kudo,
Susumu Sakuragi and Kazunori Yamazaki; R & D Center, Sumitomo
Heavy Industries, Ltd., Yokosuka, Kanagawa, Japan.
A21.8
Temperature-Dependent Measurements on a-Si:H Solar Cells. Jianjun Liang1, Eric A. Schiff1, Subhendu Guha2, Baojie Yan2 and Jeffrey Yang2; 1Physics, Syracuse University, Syracuse, New York; 2United Solar Ovonic Corp., Troy, Michigan.
A21.9
Matching of the Amorphous Si Top Solar Cell and Low Temperature Crystallized Si Bottom Solar Cells. Andrzej Kolodziej and Pawel Krewniak; Department of Electronics, AGH University of Science and Technology, Krakow, Poland.
A21.10
Influence of Hydrogen Plasma on Electrical and Optical Properties of Transparent Conductive Oxides. L. Raniero, I. Ferreira, A. Pimentel, A. Goncalves, S. Zhang, E. Fortunato and R. Martins; Department of Materials Science / CENIMAT, New University of Lisbon and CEMOP-UNINOVA, Caparica, Portugal.
SESSION A22: Poster Session: Thin Film Transistors
Thursday Evening, March 31, 2005
8:00 PM
Salons 8-15 (Marriott)
A22.1
Gate Oxide Integrity for Polysilicon Thin-Film Transistors:
A Comparative Study for ELC, MILC, and SPC Crystallized Active
Polysilicon Layer. Byoung D. Choi, Myeong So, Daechul Choi, Inbok Song and Hokyoon Chung; Device Engineering, Samsung, Yongin, South Korea.
A22.2
Low Temperature Metal-Free Fabrication of Polycrystalline Si and Ge TFT's by PECVD Hydrogenation. Pouya Hashemi1, Jaber Derakhshandeh1, Bahman Hekmatshoar1, Shamseddin Mohajerzadeh1, Yaser Abdi1 and M. D. Robertson2; 1ECE Department, Thin Film Lab, University of Tehran, Tehran, Iran; 2Department of Physics, Acadia University, Wolfville, Nova Scotia, Canada.
A22.3
ABSTRACT WITHDRAWN
A22.4
Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology. Jackson Lai1, Nader Safavian1, Arokia Nathan1 and John A. Rowlands2; 1Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada; 2Imaging Research Program, Sunnybrook Health Science Centre, Toronto, Ontario, Canada.
A22.5
The Hysteresis Analysis of Hydrogenated Amorphous Silicon
Thin Film Transistors for an Active Matrix Organic Light Emitting
Diode. Jae-Hoon Lee, Kwang-Sub Shin, Chi-Heon Kang
and Min-Koo Han; Electrical Engineering and Computer Science,
Seoul National University, Seoul, South Korea.
A22.6
Low Hydrogen Concentration Silicon Nitride as a Gate Dielectric
of TFTs for Flexible Display Application. Joong Hyun
Park, Chang Yeon Kim, Kwang Sub Shin and Sang Geun Park;
School of Electrical Engineering and Computer Science, Seoul
National University, Seoul, South Korea.
SESSION A23: Solar Cells II
Chair: Gautam Ganguly
Friday Morning, April 1, 2005
Room 2002 (Moscone West)
8:30 AM *A23.1
Characterization of the Silicon-Based Thin Film Multi-Junction Solar Cells. Yoshihiro Hishikawa, Research Center for Photovoltaics, AIST, Tsukuba, Ibaraki, Japan.
9:00 AM A23.2
High Efficiency Solar Cells with Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD. Yaohua Mai1,2, Stefan Klein1, Reinhard Carius1, Xinhua Geng2 and Friedhelm Finger1; 1Institute for Photovoltaic, Forschungszentrum Juelich, Juelich, Germany; 2Institute of Photoelectronics, Nankai University, Tianjin, China.
9:15 AM A23.3
Improved Back Reflector for High Efficiency Hydrogenated
Amorphous and Nanocrystalline Silicon Based Solar Cells. Baojie
Yan1, Jessica M. Owens1, Chun-Sheng
Jiang2, Jeffrey Yang1 and Subhendu Guha1; 1United
Solar Ovonic Corporation, Troy, Michigan; 2National
Renewable Energy Laboratory, Golden, Colorado.
9:30 AM A23.4
Bifacial Silicon Heterojunction Solar Cell with Deposited Back Surface Field. Hanno Dietrich Goldbach, Arjen Bink and Ruud E. I. Schropp; Debye SID, University Utrecht, Utrecht, Netherlands.
9:45 AM A23.5
High-Performance Amorphous Silicon Emitter for Crystalline
Silicon Solar Cells. Eugene Iwaniczko, Qi Wang,
Matthew R. Page, Dean Levi, Yanfa Yan, Howard M. Branz and
Tihu Wang; National Renewable Energy Laboratory, Golden, Colorado.
10:00 AM BREAK
SESSION A24: Characterization of Microcrystalline Silicon
Chair: Sigurd Wagner
Friday Morning, April 1, 2005
Room 2002 (Moscone West)
10:30 AM *A24.1
Structure of Microcrystalline Solar Cell Materials: What
Can we Learn from Electron Microscopy? Martina Luysberg1,2 and L. Houben1,2; 1Forschungszentrum Juelich, Institut of Solid State Research, Juelich, Germany; 2Research Center Juelich, Ernst-Ruska Center for Microscopy and Spectroscopy with Electrons, Juelich, Germany.
11:00 AM A24.2
Structural and Electronic Properties of Hydrogenated Nanocrystalline Silicon Films Made with Hydrogen Dilution Profiling Technique. Keda Wang1, Daxing Han1, Brittany Huie2, Jeniffer R. Weinberg-Wolf2, Baojei Yan3, Jeff Yang3 and Subhendu Guha3; 1Physics Department, Boston College, Chestnut Hill, Massachusetts; 2Department of Physics & Astronomy, Department of Physics & Astronomy, Chapel Hill, North Carolina; 3United Solar Ovonic Corporation, Troy, Michigan.
11:15 AM A24.3
Microcrystalline and Nanocrystalline Silicon: Simulation
of Material Properties. Rana Biswas1,3,
Bicai Pan2 and Venkatesh Selvaraj3; 1Physics & Astronomy;
and Electrical & Computer Engineering, Iowa State University,
Ames, Iowa; 2Dept. of Physics, Univ. of Science
and Technology of China (USTC), Hefei, China; 3Microelectronics
Research Center, Iowa State University, Ames, Iowa.
11:30 AM A24.4
Doping Dependence of Chlorine Incorporation in SiCl4 Based
Microcrystalline Silicon Films. Wolfhard Beyer,
Reinhard Carius and Uwe Zastrow; IPV, Forschungszentrum Juelich,
Juelich, Germany.
11:45 AM A24.5
Annealing Characteristics of Al-Doped Hydrogenated Microcrystalline Cubic Silicon Carbide Films. Shinsuke Miyajima1, Keisuke Haga1, Akira Yamada2 and Makoto Konagai1; 1Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan; 2Quantum Nanoelectronics Reserch Center, Tokyo Institute of Technology, Tokyo, Japan.
Symposium Organizers
Rana Biswas
Iowa State University
Dept. of Physics and Astronomy
Microelectronics Research Center
and Ames Laboratory
Ames, IA 50011
Tel: 515-294-6987
Fax: 515-294-0689
biswasr@iastate.edu |
Reinhard Carius
Forschungszentrum Juelich
IPV
Leo-Brandt Str.
52425 Juelich
Germany
Tel: 49-2461-614508
Fax: 49-2461-618203 r.carius@fz-juelich.de |
Robert Collins
University of Toledo
Dept. of Physics and Astronomy
Toledo, OH 43606
Tel: 419-530-2195
Fax: 419-530-2723, rcollins@physics.utoledo.edu |
Michio Kondo
National Institute for Advanced Industrial Science and Technology
Central-2
Research Initiative for Thin Film Silicon Solar Cell
1-1-1 Umezono
Tsukuba
Ibaraki 305-8568
Japan
Tel: 81-298-61-5440
Fax: 81-298-61-3363, michio.kondo@aist.go.jp |
P. Craig Taylor
University of Utah
Dept. of Physics
115 S. 1400 E.
Rm. 201
Salt Lake City, UT 84112-0830
Tel: 801-581-8751
Fax: 801-581-4246, craig@physics.utah.edu |
Administrative Contact
Mary Ann Woolf
University of Utah
Dept. of Physics
115 S. 1400 E.
Rm. 201
Salt Lake City, UT 84112-0830
Tel: 801-581-4246
Fax: 801-581-4246, woolf@physics.utah.edu |
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