As the semiconductor industry road map advances towards the teraherz performance levels, new materials and device architectures are needed to meet technology requirements for future product introductions. Nearly every material used in current critical transistor technologies (gate dielectric, gate electrode, channel, or substrate) may have to be replaced. Mobility-enhancing channel materials based on silicon or high-mobility semiconductors, such as Ge or III-V compounds, are rapidly emerging as promising candidates to achieve enhanced high-frequency performance with both conventional and advanced gate stacks. Advanced gate stacks comprising high- k dielectric and metal electrode combinations are needed to scale down devices while maintaining low-gate leakage current for low-power operation. Finally, appropriate compliant substrates of the semiconductor-on-insulator (SeOI) type should be developed leveraging the already mature and low-cost manufacturing of scalable Si wafers to enable cost-effective volume production of future high-mobility semiconductor devices. The symposium aims at bringing together experts from semiconductor (Si, Ge, and III-V's) and metal oxide R&D communities to debate challenging material problems such as the stability of high- k metal oxide gate dielectrics on high-mobility semiconductors, the semiconductor overgrowth on epitaxial oxides for novel fully epitaxial SeOI, and the control of the interface integrity. In addition, contributions to process integration challenges, device characterization, channel mobility degradation, and defect characterization and control could help identify most viable high-mobility material as well as possible roadblocks in the development of the new technology.
Session Topics
Papers are solicited in the following and related areas:
- Advanced gate stacks on mobility-enhancing channels: strained Si, (110)- and (111)-oriented Si, and SiGe
- Advanced gate stacks on high-mobility semiconductors: Ge and III-V compounds
- Metal-oxide/semiconductor heterostructures—fundamentals of materials preparation methodologies: ALD, CVD, MBE, sputtering, and PLD
- Metal-oxide and semiconductor heterostructures: modeling of growth processes, band offsets, bulk oxide defects, and interface carrier traps
- Structural, physical, and chemical characterization of metal oxides on semiconductors: XRD, TEM, SIMS, XPS, RBS, and MEISS
- Characterization of interface structure and defects: both physical/EPR, EDMR, and electrical/CV, IPE
- High-mobility compliant SeOI substrates: GeOI, GaAs-on-Insulator, and SOI
- Process integration issues: junction formation and thermal stability of gate stacks
- High-mobility transistor devices: channel control and channel mobility
- Metal gate electrodes and their impact on transistor performance enhancement
- Channel mobility degradation mechanisms in Si and high-mobility transistors with high-k gate dielectrics
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Invited Speakers
Invited speakers include: R. Chau (Intel), M. Fanciulli ( MDM-INFM , Italy ), M. Fischetti (IBM T.J. Watson Research Ctr.), E. Fitzgerald (Massachusetts Inst. of Technology), B. Ghyselen (SOITEC S.A. , France), M. Houssa (IMEC, Belgium ), D.-L. Kwong ( Univ. of Texas-Austin), J.-P. Locquet (IBM-Zurich, Switzerland), M. Meuris (IMEC, Belgium), M. Passlack (Motorola), K. Saraswat (Stanford Univ.), H. Shang (IBM T.J. Watson Research Ctr.), A. Teramoto (Tohoku Univ., Japan), and A. Toriumi (Univ. of Tokyo, Japan). |
Tutorial Session
| A tutorial complementing this symposium is tentatively planned. Further information will be included in the program that will be available in January. (Find out more about the 2005 MRS Spring Meeting Tutorial Program.) |
Symposium Organizers
A. Dimoulas
NCSR “DEMOKRITOS”
Institute of Materials Science, 153 10
Ag. Paraskevi, Athens
Greece
Tel: 30-210-650-3340
Fax: 30-210-651-9430, dimoulas@ims.demokritos.gr |
E. Gusev
IBM T. J. Watson Research Center
P.O. Box 218
Yorktown Heights, NY 10598
Tel: 914-945-1168
Fax: 914-945-2141
gusev@us.ibm.com |
P. McIntyre
Stanford University
Dept. of Materials Science & Engineering
476 Lomita Mall
Stanford, CA 94305-4045
Tel: 650-725-9806
Fax: 650-725-4034
pcm1@stanford.edu |
M. Heyns
IMEC vzw
Silicon Process & Device Technology Division
Kapeldreef 75
Leuven, Belgium
Tel: 32-16-281-348
Fax: 32-16-229-400
heyns@imec.be |
S. Takagi
University of Tokyo
School of Engineering
Electronic Engineering Dept.
7-3-1 Hongo
Bunkyo-ku
Tokyo 113-8656, Japan
Tel: 81-3-5841-7467
Fax: 81-3-5841-6702
takagi@ee.t.u-tokyo.ac.jp |
M. Orlowski
Motorola
Advanced Products Research Laboratory
Austin, TX 78721
Tel: 512-933-5020
Fax: 512-933-5304
m.orlowski@freescale.com |
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