This symposium follows on its predecessor MRS symposia held tri-annually since the 1992 Spring Meeting, with a focus on the application of defects and impurities in current and emerging semiconductor technologies. The theme includes the classic defect engineering examples such as intrinsic gettering in Si and the use of the EL2 defect level in semi-insulating GaAs, as well as more recent topics such as: vacancy implantation and cluster engineering; defect anneal by recombination enhanced defect-reaction; chemically active species (H/D) for interfacial/bulk defect passivation/activation; impurity-induced superlattice disordering; and intentional use of point and extended defects to control nucleation, interface properties, and bulk minority carrier lifetime. The role of defects in the evolution of semiconductor technology has become one of refined control—in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This symposium will continue to stimulate interaction among researchers and technologists pursuing effective use of defect incorporation and control at various facets of technology and widely different semiconductor materials systems. Papers are also solicited in areas such as novel defect-related phenomena and defect characterization. The symposium will consist of both invited and contributed talks, and poster sessions.
Session Topics
Papers are solicited in the following and related areas:
- Grown-in defects in bulk crystals and thin films
- Defect-enabled optical emission
- Co-doping and molecular doping
- Radiation and process-induced defects
- Hydrogen interaction with semiconductors
- Defect reaction, activation, and passivation
- Defects in devices
- Defect characterization
- Defects in self-assembled nanostructures
- Defect and doping issues in nanostructures
- Crystalline/noncrystalline mixed phases
- Strained layers
- Defect issues in photovoltaics/optoelectronics
- Gettering and related phenomena
- Defect/doping in wide-bandgap semiconductors
- Defect and impurity clusters
- Dopant-defect interactions
- Non-equilibrium diffusion phenomena
- Plasma and ion-beam damage
- Isotope effects
- Defect modeling
- Interfaces, quantum wells, and superlattices
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Invited Speakers
| Invited speakers (partial list) include: D.Z. Chi (IMRE, Singapore), G. Dollinger (Technical Univ., Munich, Germany), N.T. Eberlein (Univ. Exeter, United Kingdom), W. Futako (AIST, Japan), S. Matsumoto (Keio Univ., Japan), M.D. McCluskey (Washington State Univ.), Y.N. Mohapatra (IIT/Kanpur, India), B.B. Nielsen (Univ. Aarhus, Denmark), E. Ntsoenzok (CERI/CNRS, France), Y. Ono (NTT Labs, Japan), F. Priolo (INFM–MATIS, Italy), J. Schmidt (ISFH, Hameln - Emmerthal, Germany ), S.R. Schofield (Univ. of New South Wales, Australia), T. Tsuchiya (Shimane Univ., Japan), P.M. Voyles (AT&T Bell Labs), K.M. Yu (Lawrence Berkeley National Lab), and A. Zunger (National Renewable Energy Lab). |
Tutorial Session
| A tutorial complementing this symposium is tentatively planned. Further information will be included in the program that will be available in January. (Find out more about the 2005 MRS Spring Meeting Tutorial Program.) |
Symposium Organizers
S. Ashok
The Pennsylvania State University
212 Earth and Engineering Science Bldg.
University Park, PA 16802
Tel: 814-863-4588
Fax: 814-865-9974
sashok@psu.edu |
J. Chevallier
CNRS-Laboratoire de Physique des Solides et de Cristallogénèse
1 pl. Aristide Briand
92195 Meudon Cedex, France
Tel: 33-1-4507-5340
Fax: 33-1-4507-5841
jacques.chevallier@cnrs-bellevue.fr |
B. L. Sopori
National Renewable Energy Laboratory
1617 Cole Blvd.
Golden, CO 80401
Tel: 303-384-6683
Fax: 303-384-6684
bhushan_sopori@nrel.gov |
M. Tabe
Shizuoka University
Research Institute of Electronics
3-5-1 Johoku
Hamamatsu 432-8011, Japan
Tel: 81-53-478-1307
Fax: 81-53-478-1651
romtabe@rie.shizuoka.ac.jp |
P. Kiesel
Palo Alto Research Center
3333 Coyote Hill Rd.
Palo Alto, CA 94304
Tel: 650-812-4178
Fax: 650-812-4105
peter.kiesel@parc.com |
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