MRS Meetings



San Francisco Marriott and Argent Hotels
San Francisco, California
April 1-5, 2002

Symposium Tutorial Program

Available only to meeting attendees, tutorials can introduce a new or rapidly breaking area of research, highlight new developments in an older field, or provide an overview for those unfamiliar with the topic. They are designed to encourage the exchange of information by meeting attendees during the symposium.

  • Tutorials are open to all meeting attendees at no extra change
  • Tutorial notes may be ordered in advance (complete the Tutorial Notes section on the preregistration form). Preordered tutorial notes will be available at the Tutorial Notes Desk from 8:00 a.m. - 3:00 p.m. on Monday, April 4 and at the Publications Desk at other times. A limited supply of tutorial notes will be available for on-site purchase at the Publications Desk.

STA: Amorphous and Polysilicon Materials and Devices for Large-Area Electronics
STB: Integrated Circuit Fabrication and Yield Control
STF: Semiconductor Defect Characterization by Deep Level Transient Spectroscopy Techniques
STJ: Texture and Microstructure in Thin Films
STK: Optoelectronic Devices for Communications
STL: Introduction to Photonic Crystals
STN: In-situ and Ex-situ Characterization Techniques and Imaging of Biomaterials
STU: Microsystems Technology - Biological and Medical Applications



 
Symposium A
Monday, April 1, 8:30 a.m.-4:30 p.m.
Salon 5/6, Marriott Hotel

STA: Amorphous and Polysilicon Materials and Devices for Large-Area Electronics

Hydrogenated amorphous silicon (a-Si:H) and micro- or polycrystalline silicon (µc-Si, poly-Si) are important technological materials for large-area electronics, with applications to thin film solar cells, active matrix liquid crystal displays (AM-LCDs), optical scanners, and radiation imaging. The course describes the growth and preparation, basic material properties, device physics and state-of-the-art processing issues of modern large-area-array technology based on amorphous or heterogeneous thin silicon films. Special emphasis will be on the relation between material properties and device performance.

Instructors:

Robert A. Street
Xerox Palo Alto Research Center

Ping Mei
Hewlett-Packard Laboratories


 
Symposium B
Monday, April 1, 8:00 a.m.-12:00 p.m.
Salon 11/12, Marriott Hotel

STB: Integrated Circuit Fabrication and Yield Control

This course, starting from buying the wafer up to the final interconnect structure made by Cu damascene techniques, details in a step-by-step fashion how a logic chip is built and what are the associated yield control/metrology steps encountered during the build. The build basics which are applicable to any state-of-the-art chip facility will be described in such detail that the student will understand the reason for each step and the logic of the sequence used, as well as systematic and random defects encountered. Additionally, a discussion of an active yield control strategy is described including in-line inspection techniques and points, use of CD, overlay and AFM, both now and in the near future. Cross sections, top-down defect appearance, etc., at each key step will be used to illustrate the build process and the defects found. The instructor, Prof. Ernest Levine of the School of Nanosciences and Nanoengineering, University of Albany, S.U.N.Y, has spent 24 years working in the field which will be explored in this tutorial.

Instructor:

Ernest Levine
School of Nanosciences and Nanoengineering, University of Albany, S.U.N.Y


 
Symposium F
Monday, April 1, 9:00 a.m.-4:00 p.m.
Salon 1/2, Marriott Hotel

STF: Semiconductor Defect Characterization by Deep Level Transient Spectroscopy Techniques

This tutorial review will focus on deep level transient spectroscopy (DLTS), an extremely sensitive method of characterizing defects in semiconductors. While the DLTS technique has been around for nearly three decades, it has not found widespread usage in industry due to the rather sophisticated equipment and analysis required for proper interpretation of results. The aim of the tutorial is to introduce this elegant and versatile characterization method to materials and device specialists with little or marginal familiarity with the technique. As a result, the attendees will be able to make use of existing commercial DLTS equipment as well as modify them to fit specific tasks of interest. The full-day tutorial will review the basic principles and techniques, present experimental and instrumentation details, address measurement pitfalls and interpretational difficulties, and illustrate with examples from different materials systems.

The tutorial will be useful to all those who are involved in growth and characterization of semiconductor materials and are currently using or planning to use these techniques in the future. The attempt in the first half would be to impart basic principles and skills. The second half would be of a more advanced nature.

An Overview Introduction to DLTS by N.M. Johnson, Palo Alto Research Center

Tutorial Outline:

  • Basic Principles
  • Phenomenology of Gap States
  • Parameters of Common Interest
  • Voltage-Controlled Space Charge Layers-Basic Device Physics & Processing
  • Origin of Transients & Relaxation Spectroscopy
  • Standard Measurements & Analysis-Principles and Practice
  • Preparing for Transient Measurements-Importance of C-V, I-V
  • How to Obtain Parameters of Interest
  • Illustration with Case Studies
  • Standard Variants of DLTS-Current, DDLTS, Constant Capacitance Mode & Charge DLTS
  • Review of Standard Assumptions & Their Breakdown
  • Basic Instrumentation & Their Principles
  • Instrumentation & Analysis-Changing Emphasis
  • Box Car and Lock-In-Based Instrumentation
  • DLTS as Integral Transform
  • Relaxation Spectroscopy as Family of Difference Spectroscopy & Higher-Order Spectroscopy
  • Isothermal Transient Spectroscopy & Its Advantages
  • Fourier DLTS & Laplace DLTS
  • Commercial vs. Home-Built Systems, Routine Usage in Industry
  • Role of DLTS in Defect Identification & Physics Understanding
  • Relation to Other Defect Diagnostic Techniques
  • Beyond Standard Analysis
  • Important Defect Phenomena-Case Studies (EL2, DX, a-Si:H, MOS Interfaces, Thermal Donors, Radiation-Induced Defects, Etc.)
  • Optical Probe-Based Transient Spectroscopy-DLOS, Photocapacitance, Etc.
  • Applications to Some Current Problems in Semiconductor Materials
  • Use & Misuse of DLTS Family of Techniques-Care and Precautions
  • Future Prospects

Instructor:

Y.N. Mohapatra
Indian Institute of Technology, Kanpur



 
Symposium J
Monday, April 1, 8:30 a.m.-4:30 p.m.
Salon 3/4, Marriott Hotel

STJ: Texture and Microstructure in Thin Films

Texture plays an increasingly important role in the application of materials in electronic and magnetic devices. The texture of thin films and multilayers must be controlled to optimize properties and performance and to increase device lifetimes. The current definition of texture incorporates not only preferred orientation, as described by the orientation distribution function, but also the grain boundary character distribution which describes the statistics of lattice misorientation and grain boundary plane orientation. Symposium J aims to bring together those engaged in electronic and magnetic device research, development, production and failure analysis, where texture has a documented or potential effect on the relationships between processing, properties and performance. Material classes of interest include interconnect metals, electronic bulk ceramics, magnetic films, ferroelectric and piezoelectric films, dielectrics, and buffer, barrier and seed layers.

The tutorial will cover the following areas:

  • Groundwork for understanding basic texture concepts and applying them in thin film and bulk situations
  • Electron backscatter diffraction techniques applied to local and global texture phenomena and issues in which microstructure and grain boundary character are of importance
  • Texture in thin films, including the formation, development, measurement and analysis of thin film texture
  • The final tutorial session will be devoted to a round-table discussion of texture and microstructure issues.

Instructors:

Hasso Weiland
Alcoa Technical Center

Stuart I. Wright
TSL/EDAX

Hualong Li
McGill University



 
Symposium K
Thursday, April 4, 1:15-4:15 p.m.
Nob Hill C/D, Marriott Hotel

STK: Optoelectronic Devices for Communications

The dramatic advances in the technologies for electronic integrated circuits over the past several decades are widely known. Less well known are the even more dramatic advances in the technology and understanding of optoelectronic devices, particularly those intended for use in optical communication systems. This tutorial will review the main developments in optoeletronic devices (semiconductor lasers and optical detectors) and the various microfabricated optical components (waveguides, diffractive/refractive optics and micromechanical devices that have defined our present optical communications infrastructure and that are defining future generations of optical communication systems. The tutorial will begin with an overview of the basic laser diode and high-speed optical detectors. The ingenuity seen in the application of diverse semiconductor materials to achieve desired devices will be illustrated by the rich set of binary, ternary, and quaternary compound semiconductors used, along with their characteristics impacting communication systems design. The precise control of microfabrication will be illustrated by the MBE-grown quantum layers used for many years in high-performance semiconductor lasers and in more recent optoelectronic devices. Integrated structures including the basic optical device and refractive/diffractive elements will be reviewed. Surface emitting optical sources, providing system architecture options not possible with in-plane emitting sources, will be discussed using the examples of VCSEL arrays, detector arrays, and mirror array switching components. Wavelength division multiplexing (the optical analog of the familiar use of frequency division multiplexing for electronic communication systems) has greatly expanded the capabilities of optical communication systems, allowing several optical channels to simultaneously pass through a common optical fiber. Wavelength tunable lasers and detectors, critical elements in such wavelength division multiplexed (WDM) systems, will be described. Throughout the discussions of the topics above, the performance characteristics of the devices, from the perspective of the performance objectives of an optical communication system, will be presented. Long-distance optical networks are cost effective despite a high cost for the transmitter and receiver optoelectronic components due to the very high data rates that can be transmitted over a single optical fiber. As the costs of optoelectronics have decreased, the benefits of optical communications can perhaps be applied to shorter distance optical networks (e.g., LANs). The presentation will include examples of contemporary systems for both cases.

Instructor:

S.K. Tewksbury
Stevens Institute of Technology



 
Symposium L
Monday, April 1, 1:30-5:00 p.m.
Nob Hill C/D, Marriott Hotel

STL: Introduction to Photonic Crystals

Photonic crystals have attracted worldwide interest during the last decade. But what, exactly, are the new interesting physical properties of photonic crystals, how can we make them, and where is their place in integrated optics? This tutorial tries to give an introduction to the physics of photonic crystals by the use of wavevector diagrams, as well as to provide a current state of the art of silicon-based photonic crystals, followed by an outlook on possible application of photonic crystals in integrated optics.

Instructors:

Reinhard März
Infineon Technologies AG

Philip Russell
University of Bath

Ralf Wehrspohn
Max-Planck-Institute of Microstructure Physics



 
Symposium N
Monday, April 1, 1:00-5:00 p.m.
Nob Hill, A/B, Marriott Hotel

STN: In-situ and Ex-situ Characterization Techniques and Imaging of Biomaterials

This tutorial focuses on in situ and ex-situ experimental methods that provide information about molecular structure, 3D architecture, surface morphology and dynamics of biomaterials. The tutorial will be comprised of three lectures covering novel methods for 2D and 3D imaging of biostructures (AFM, TEM, tomography), molecular and cell biology techniques, tissue engineering, as well as a basic tutorial on crystallization laws in biomineralization as revealed by the above techniques (Ostwald rule and amorphous phases; fundamental phenomena and parameters; modification of growth by large and small molecules). Each lecture will cover the basic experimental approach including methods of sample preparation and important technical issues, and examples of applications to both inorganic and organic systems will be presented.

Instructors:

William J. Landis
Northeastern Ohio Universities College of Medicine

Alexander A. Chernov
Universities Space Research Association

James J. De Yoreo
Lawrence Livermore National Laboratory



 
Symposium U
Monday, April 1, 1:00-5:00 p.m.
Salon 14/15, Marriott Hotel

STU: Microsystems Technology - Biological and Medical Applications

The tutorial will cover micromachining technologies--surface, bulk micromachining, LIGA, polymer-based techniques--with process and device examples. Following the technology overview, potential applications of this fast maturing technology base in biomedical sciences (such as drug delivery, separation, detection, sample manipulation, neural prosthesis, advanced research tools, etc.) will be highlighted. A survey of current research projects/prototype devices, with an eye towards their potential function and place in realizing the impending "micro/nanobiotechnology" revolution, will be presented. This tutorial is intended to provide the attendees with a basic working knowledge of the micromachining technologies and their foreseeable applications in the biomedical sciences.

Instructors:

Ron Manginell
Sandia National Laboratories

Murat Okandan
Sandia National Laboratories

 

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