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San Francisco Marriott Hotel and Argent Hotel
April 16-20, 2001
San Francisco, California
Tutorials
- Available Only to Meeting Attendees
- All topics concentrate on new, rapidly breaking areas of research
- Format facilitates exchange of information by meeting attendees during the symposium
- All tutorials are integrated into a related symposium program
- Tutorial attendance is open to all meeting registrants at no extra change
- Tutorial notes are optional at a nominal fee (refer to preregistration form)
Symposium A
Monday, April 16, 9:00 a.m. - 4:00
p.m., Nob Hill A/B, Marriott
ST A: Amorphous and Poly-Silicon Materials and Devices
for Large-Area Electronics
Hydrogenated amorphous silicon (a-Si:H) and micro- or polycrystalline silicon (µc-Si, poly-Si) are important technological materials for large-area electronics, with applications to thin film solar cells, active matrix liquid crystal displays (AM-LCDs), optical scanners, and radiation imaging. The course describes the growth and preparation, basic material properties, device physics and state-of-the-art processing issues of modern large-area-array technology based on amorphous or heterogeneous thin silicon films. Special emphasis will be on the relation between material properties and device performance.
Instructors:
Robert A. Street, Xerox Palo Alto Research Center
Ping Mei, Hewlett-Packard Laboratories
Symposium F
Monday, April 16, 1:30 - 5:00 p.m.,
Salon 3 /4, Marriott
ST F: Advanced Deposition and Characterization Techniques
This tutorial will include lectures on three advanced deposition techniques and one lecture on in-situ characterization methods for the fabrication of high quality epitaxial oxide films. The tutorial will include in-depth descriptions of three particular growth techniques (Pulsed Layer Deposition (PLD), Atomic Layer Epitaxy (ALE), and Combinatorial Deposition). The tutorial will conclude with a lecture focused primarily on X-ray film characterization. Each of the four segments will include background information, a description of the respective method, the current state of the art, and unique advantages and limitations, e.g., fabrication of a specific oxide film, achievement of surface smoothness, versatility, rapid compositional evaluation, or integration in multistep hybrid device fabrication schemes. The intention of the short course is to introduce the attendee to background and overview information on each of these deposition methods and the use of X-ray diffraction techniques to assess film quality and crystallographic growth orientation.
Instructors:
Ichiro Takeuchi, University of Maryland
Thomas E. Seidel, Genus, Inc.
Quanxi Jia, Los Alamos National Laboratory
Darrell Schlom, The Pennsylvania State University
Symposium H
Monday, April 16, 1:30 - 5:00 p.m.,
Salon 5/ 6, Marriott
ST H: Characterization of Photovoltaic Materials
Photovoltaic materials span an immense range of chemical and physical properties from perfect diamond to highly defective amorphous structures and from simple elemental semiconductors to complex alloy ternary compounds. Critical properties cover almost all aspects of normal materials properties-optical, electronic, structural, and chemical. This course covers the most useful methods for characterization of photovoltaic materials. The course is divided into four sections, surface structural and chemical, bulk structural and chemical, optical, and electronic probes. Surface probes are reviewed because surfaces and interfaces are critical to solar cells and determine the effectiveness of carrier collection. Bulk probes are covered because these determine composition and because the bulk properties dominate many aspects of the device. Optical methods describe how light is absorbed and transmitted, determining the generation of current in the device. Finally, electronic properties ultimately determine the performance of a device. Specific topics to be covered are SEM, AES, XPS, scanning probes, XRD, TEM, SIMS, RBS, Absorption/Transmission, PL, ellipsometry, Hall-effect, Capacitance-voltage, DLTS, and EBIC/OBIC. Finally, a discussion of the information that can be gleaned from standard current/voltage and spectral response measurements. Add-on methods such as EDS will be covered during the primary section listed where that add-on is most commonly found. Examples of application of each technique to photovoltaic materials and potential pitfalls and complications relevant to this class of materials are considered.
Instructor:
Angus Rockett,
University of Illinois
Symposium I
Monday, April 16, 1:00 - 5:00 p.m.,
Salon 1/2, Marriott
ST I: Wafer Bonding and Thinning Techniques for Material Integration
Wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics and microelectromechanical systems (MEMS). This tutorial will bring together the latest information on wafer bonding, and describe the status of the technology, major accomplishments, challenges and opportunities for future research and applications. We will cover a range of materials including silicon, III-V compounds and oxides as well as specialized topics such as low-temperature bonding, thinning processes based on hydrogen-induced layer splitting, and the potential use of wafer bonding for surface protection. The tutorial will also include some discussion on controversial subjects such as "universal compliant substrates".
The tutorial covers the following topics:
Introduction to wafer bonding and a brief
history of the field
Cleaning procedures
Bonding requirements and procedures
Examination of bonding quality
Silicon direct bonding & Silicon-on-insulator
Direct bonding of non-silicon materials; III-V compounds, SiC,
oxides and thin films
Low temperature bonding
Bonding via interlayers
Thinning techniques
Electronic properties of bonded heterostructures
Examples of applications and novel devices
Outlook
Instructor:
Marin Alexe, Max Planck Institute of Microstructure Physics
Symposia L/N/EE
Monday, April 16, 1:30 - 5:00 p.m.,
Salon 10/11, Marriott
ST L/N/EE: Advanced Techniques for Materials Characterization
and Reliability
Testing
Advanced microelectronic interconnection structures make use of high-conductivity copper conductors with low dielectric-constant insulators at extremely small dimensions. As a consequence, issues arise in the characterization and reliability of these structures that are not found in the well-used aluminum-silica system. Differences appear in: the microstructure of the copper metallization and the changes induced in it by processing, thermal loading and electromigration; the mechanical characteristics of the surrounding dielectric; and, the resulting interdependence of the reliability of the interconnection structure and the changes in the metal microstructure as constrained by the dielectric. This tutorial will cover these topics, introducing participants to the issues involved and the fundamental reliability concerns for both the metallization and its supporting dielectric encapsulant. Advanced methods for characterizing electromigration behavior (especially that of copper), mechanical properties of dielectrics (especially those of low-k materials), and metallization microstructure (by X-Ray diffraction) will be described. The intention of the tutorial is to give the attendee a fundamental background to some of the major characterization methods (illustrated by case-studies) used in the associated symposia, as well as raising issues for future characterization advances.
Instructors:
Du Nguyen, IBM Electronics
Hari Rathore, IBM Electronics
Robert F. Cook, University of Minnesota
Stuart R. Stock, Georgia Institute of Technology
Symposium Q
Monday, April 16, 1:00 - 5:00 p.m.,
Salon 14/15, Marriott
ST Q: Femtosecond Techniques for Materials Scientists
Femtosecond Techniques
1. Linear and nonlinear propagation of light
a. Propagation of electromagnetic waves in dense media
b. Dielectric function
c. Lorentz equations, Drude model
d. Pulse dispersion
c. Nonlinear response
f. Second harmonic generation and inversion symmetry (*)
g. Self phase modulation and self-focusing
h. Continuum generation
2. Femtosecond measurements
a. Pump-probe technique
b. Dispersion compensation techniques (*)
c. Representation of pulses; Wigner representation
d. Temporal characterization of pulses
e. Joint time-frequency measurements (*)
f. Frequency-resolved optical gating
g. Limits of frequency and time resolution (*)
*Worksheets format
Instructor:
Eric Mazur,
Harvard University
Symposium R
Monday, April 16, 1:30 - 5:00 p.m.,
Salon 12/13, Marriott
ST R: Observation, Monitoring and Manipulation of Single Molecules
on Surfaces and Interfaces
This tutorial will cover the techniques that allow observations, monitoring and in some cases manipulation of single molecules or virus and colloid particles on surfaces and interfaces. Atomic force microscopy is one of the most broadly used techniques for such purposes; hence it will be the prime focus of the two lectures. The instructors will provide an overview -- with some hindsight onto the history and evolution -- of the atomic force imaging, including the most recent advances in fast imaging, in quantitative phase imaging and the insight that these novel methods provide. The second part of the tutorial will be dedicated to single molecule manipulation and construction of protein molecular arrays on surfaces. The attendee will obtain fundamental background on the method, combined with an understanding of its strengths and limitations, and the promising areas of application.
Instructors:
Kevin Kjoller, Digital Instruments, Veeco Metrology
Siu-Tung Yau, The University of Albany
Symposium T
Monday, April 16, 1:00 - 5:00 p.m.,
Nob Hill C/D, Marriott
ST T: The Spintronics Revolution
New material structures having new mechanisms for spin dependent transport are being applied to a wide range of electronic functions, including magnetic field sensors, read heads for hard drives, nonvolatile memory, and galvanic isolators. The evolution the material properties of giant magnetoresistive (GMR) materials from multilayers to sandwiches and spin valves, and of magnetic tunnel junctions (MTJs) is described. Materials trade-offs in magnetic sensors and isolators are described in some detail. Opportunities for further material improvements will be described. Integration of these new magnetic structures with integrated circuits is necessary in some applications and desirable in others, and leads to other materials challenges. The integration of magnetic materials with semiconductors has evolved considerably in the last several decades, and the trend suggests that some new forms of integrated semiconductor and magnetic materials are likely. The new DARPA program on Spins in Semiconductors (SPINS) may be one platform on which such devices are conceived.
Instructor:
James Daughton, Nonvolatile Electronics, Inc.
Symposium AA
Monday, April 16, 9:00 a.m. - 4:00
p.m., Golden Gate B3/B2, Marriott
ST AA: Fundamental Methods of Multiple Length Scale Modeling
The purpose of this tutorial is to introduce the many facets of multi-length scale modeling. Because of the growing interest in the field of multiple length scale modeling, this tutorial will provide the attendees with a balanced description of the main facets of this field as applied in materials science. The tutorial will consist of four 45-minute lectures that will cover half a day, and the remaining time will be dedicated to a hands-on computer session where the attendees will have access to computers to run actual applications. The areas to be covered are the four fundamental areas that are required for multiple length-scale modeling: electronic structure theory, atomistic modeling (molecular dynamics and Monte Carlo methods), dislocation dynamics, and continuum level modeling. These lectures are meant to provide the attendees with a brief overview of the field and its challenges, and a detailed description of a particular method that will be utilized in the second part of the tutorial. The second half of the tutorial will be a hands-on session where personal computers will be used for the attendees to run illustrative examples in the four topical areas. There will only be a few computers, so attendees are encouraged to bring their laptops for use in the second part of the tutorial.
Instructors:
K.J. Cho, Stanford University
George Gilmer, Lucent Technologies
Hussein Zbib, Washington State University
Ronald E. Miller, University of Saskatchewan
Andrew Quong, Lawrence Livermore National Laboratory
