SYMPOSIUM C

Surface and Interface Structure and Dynamics November 30 - December 3, 1998 Chairs
Theodore Einstein Univ of Maryland
E. Plummer Univ of Tennessee
Andreas Schmid Sandia National Laboratories

* Invited paper

SESSION C1: DYNAMICS OF ADATOMS, VACANCIES AND CLUSTERS I
Chair: Jim Evans
Monday Morning, November 30, 1998
Salon C/D (M)

8:30 AM C1.1
THEORETICAL INVESTIGATION OF THE EFFECTS OF HYDROGEN TERMINATION OF THE SINGLE-HEIGHT STEPPED Si(100) SURFACE. Jun Nara , Taizo Sasaki, Takahisa Ohno, National Research Institute for Metals, Tsukuba, JAPAN.

8:45 AM C1.2
TOWARDS A FIRST-PRINCIPLES THEORY OF SURFACE THERMODYNAMICS. C. Stampfl ¹, H.J. Kreuzer², H. Pfnür³, and M. Scheffler¹; ¹Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, GERMANY; ²Department of Physics, Dalhousie University, Halifax, Nova Scotia, CANADA; ³Institut für Festkörperphysik, Universität Hannover, Hannover, GERMANY.

9:00 AM C1.3
PERSISTENT LAYER-BY-LAYER SPUTTERING OF Au(111). M.V. Ramana Murty , A. Judy, C. Butler, B.H. Cooper, Department of Physics, Cornell University, Ithaca, NY; A.R. Woll, J.D. Brock, School and Applied and Engineering Physics, Cornell University, Ithaca, NY; and R.L. Headrick, Cornell High Energy Synchrotron Source, Ithaca, NY.

9:15 AM C1.4
ADATOM ISLAND NUCLEATION AND ROUGHENING KINTETICS DURING LOW ENERGY ION BOMBARDMENT. H.L. Chan and E.I. Altman, Department of Chemical Engineering, Yale University, New Haven, CT.

9:30 AM C1.5
DEFECT ADSORPTION ON OXIDE SURFACES AND DEPOSITED METAL AGGREGATES. H. Kuhlenbeck , M. Baeumer, J. Libuda, H.-J. Freund, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, GERMANY.

9:45 AM BREAK

10:15 AM *C1.6
DYNAMICS OF SURFACE DIFFUSION AND OF ADSORBATE-ADSORBATE INTERACTIONS ON METAL SURFACES STUDIED BY STM. Flemming Besenbacher , Institute of Physics and Astronomy and Center for Atomic-scale Materials Physics, University of Aarhus, Aarhus, DENMARK.

10:45 AM *C1.7
ETCHING OF THE Si(001) SURFACE WITH MOLECULAR OXYGEN. James B. Hannon , Surface and Interface Science Department, Sandia National Laboratories, Albuquerque, NM.

11:15 AM *C1.8
ORDERING AT SURFACES STUDIED BY SCANNING TUNNELING MICROSCOPY. R. Schuster , S. Renisch, X.H. Xia, J. Wintterlin, and G. Ertl; Fritz-Haber-Institut der Max-Planck-Gesellschaft; Berlin, GERMANY.

11:45 AM C1.9
IN SITU OBSERVATION OF ATOMIC STEP MOTION AND INTERACTIONS DURING THE SUBLIMATION OF Si(111). P. Finnie and Y. Homma, NTT Basic Research Laboratories, Atsugi, JAPAN.

SESSION C2: DYNAMICS AT STEP EDGES
Chair: Daniel Kandel
Monday Afternoon, November 30, 1998
Salon C/D (M)

1:30 PM *C2.1
FORMATION AND RELAXATION OF TWO-DIMENSIONAL METAL ISLANDS ON SURFACES. Conrad Stoldt, Antonio Cadilhe, Cynthia Jenks, Patricia Thiel, Jim Evans , Iowa State University, Ames, IA; Maria Bartelt, Sandia National Laboratories, Livermore, CA.

2:00 PM C2.2
EDGE BARRIERS AND SMOOTHENING ON Cu(100) AT ROOM TEMPERATURE ¹. John F. Wendelken , Oak Ridge National Laboratory, Oak Ridge, TN; Jiang-Kai Zuo, Southwest Missouri State University, Springfield, MO; Woei Wu Pai, Oak Ridge National Laboratory and The University of Tennessee, Knoxville, TN.

2:15 PM C2.3
SELF-CONSISTENT MODEL FOR HOMOEPITAXIAL GROWTH KINETICS IN THE PRESENCE OF AN ISLAND EDGE BARRIER. Vladimir Trofimov , Vladimir Mokerov, Alexander Shumyankov,Institute of Radio Engineering & Electronics of RAS, Moscow, RUSSIA.

2:30 PM C2.4
INSTABILITY IN MOLECULAR BEAM EPITAXY DUE TO THE ISLAND CORNER DIFFUSION BARRIER. M.V. Ramana Murty and B.H. Cooper, Department of Physics and Cornell Center for Materials Research, Cornell University, Ithaca, NY.

2:45 PM BREAK

3:15 PM *C2.5
ISLAND DECAY ON AN ANISOTROPIC SURFACE. Karina Morgenstern ^1,2, Erik Længsgaard¹, Flemming Besenbacher¹, ¹Institute for Physics and Astronomy and Center for Atomic-Scale Materials Physics, University of Aarhus, Aarhus, DENMARK, ²Institute of Experimental Physics, University of Lausanne, Lausanne, SWITZERLAND.

3:45 PM C2.6
ORDERING FORCES OF ISLANDS AND DISLOCATION NETWORKS IN STRAINED FILMS. Karsten Pohl , Juan de la Figuera, Maria C. Bartelt, Norman C. Bartelt, Jan Hrbek*, and Robert Q. Hwang, Sandia National Laboratories, Livermore, CA.

4:00 PM C2.7
ADVANCES IN STUDYING TERRACE-WIDTH DISTRIBUTIONS ON VICINAL SURFACES: IMPROVED APPROXIMATIONS AND EXACT RESULTS FROM RANDOM-MATRIX THEORY. T.L. Einstein , O. Pierre-Louis, Physics Department, University of Maryland-College Park,College Park, MD.

4:15 PM *C2.8
ACCELERATED COARSENING ON METAL SURFACES DUE TO THE DECAY OF MULTILAYER ISLANDS VIA ATOMIC LANDSLIDES. Margret Giesen , Institut fuer Grenzflaechenforschung und Vakuumphysik, Forschungszentrum Juelich, Juelich, GERMANY.

4:45 PM C2.9
STRUCTURE OF ARSENIC-PASSIVATED GERMANIUM (100). Shupan Gan, Lian Li, Michael J. Begarney, Byung Han, and Robert F. Hicks, University of California, Dept of Chemical Engineering, Los Angeles, CA.

SESSION C3: POSTER SESSION:
SEMICONDUCTORS
Monday Evening, November 30, 1998
8:00 P.M.
America Ballroom (W)

C3.1
TEMPERATURE AND SURFACTANT EFFECTS ON THE GROWTH OF ULTRATHIN FILMS ON SEMICONDUCTOR SUBSTRATES. T. Chassé , S. Schòmann, A. Preobrajenski, K. Gebhardt, Univ Leipzig, Wilhelm-Ostwald-Inst of Phys and Theor Chem, Leipzig, GERMANY; K. Horn, Fritz-Haber-Inst of the MPG, Berlin, GERMANY.

C3.2
AN AB INITIO STUDY OF Ge AD-DIMERS ON THE Si(100) SURFACE. Antônio J.R. da Silva , A. Janotti, A. Fazzio, Instituto de Física da Universidade de São Paulo, São Paulo, BRAZIL.

C3.3
MODELLING OF GERMANIUM SEGREGATION WITH GROWTH RATE DEPENDENCE IN GS-MBE. Nicholas James Woods , Eng Soon Tok and Jing Zhang, IRC for Semiconductor Materials and Dept of Physics, Blackett Laboratory, Imperial College, London, UNITED KINGDOM.

C3.4
INTERNAL INTERFACES IN COMPOUND SEMICONDUCTOR THIN FILMS. Dov Cohen , D.L. Medlin,* and C. Barry Carter, University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN. *Sandia National Laboratories, Livermore, CA.

C3.5
DFT BASED TIGHT-BINDING MOLECULAR DYNAMICS STUDIES OF SI(100):A-SIO_X INTERFACE STRUCTURES. Zoltan Hajnal , Alexander Sieck, Thomas Frauenheim, Theoretical Physics, University of Paderborn, GERMANY; Thomas K–hler, Theoretical Physics, Technical University of Chemnitz, GERMANY.

C3.6
NANOMETER-SCALE STUDIES OF INTERDIFFUSION IN NON-STOICHIOMETRIC AlAs/GaAs SUPERLATTICES. B. Lita , Smita Ghaisas, and R.S. Goldman, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI; M.R. Melloch, School of Electrical and Computer Engineering, Purdue University, IN.

C3.7
MOLECULAR DYNAMICS SIMULATION OF GAS PERMEATION THROUGH THE MICRO POROUS MEMBRANE. Koichi Mizukami , Yasunori Kobayashi, Yasunori Oumi, Kazuo Teraishi, Momoji Kubo, S. Salai Cheettu Ammal, Akira Miyamoto, Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, Aoba-yama 07, Sendai, 980-8579, JAPAN.

C3.8
KINETICS OF STRAIN RELAXATION THROUGH MISFIT DISLOCATION FORMATION IN LAYER-BY-LAYER SEMICONDUCTOR HETEROEPITAXY. Dimitrios Maroudas , Luis A. Zepeda-Ruiz, Brett Z. Nosho, Rodney I. Pelzel, and W. Henry Weinberg, Department of Chemical Engineering, University of California, Santa Barbara, CA.

C3.9
MISFIT DISLOCATION NUCLEATION IN THIN FILMS. Q. Yuan , R. Hull, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA; J.C. Bean, J. Xu, E. Towe, Department of Electrical Engineering, University of Virginia, Charlottesville, VA.

C3.10
FIRST-PRINCIPLES

STUDY OF PHYSICAL PROPERTIES OF SILICON EMISSION DURING SILICON OXIDATION. Hiroyuki Kageshima , Kenji Shiraishi, NTT Basic Research Labs, Kanagawa, JAPAN.

C3.11
COMPUTATIONAL STUDY ON SURFACE DIFFUSION AND NUCLEATION PROCESSES IN SURFACTANT EPITAXIAL GROWTH. Hitoshi Nakahara , Ayahiko Ichimiya, Nagoya Univ, Dept of Quantum Engineering, Nagoya, JAPAN; Masakazu Ichikawa, Joint Research Center for Atom Technology, Angstrom Technology Partnership, Tsukuba, JAPAN.

C3.12
THEORETICAl MODEL OF STEP MOTION ON THE SILICON SURFACES. Grigorii V. Gadiyak , Institute of Computational Technologies, Russian Academy of Sciences, Siberian Division, Novosibirsk, RUSSIA.

C3.13
A MOLECULAR DYNAMICS STUDY OF STEP MOTIONS ON VICINAL SILICON SURFACES. A.M.Mazzone , C.N.R.-LAMEL, Bologna, ITALY.

C3.14
HYDROGEN-INDUCED

ATOMIC MOTION DURING THE INITIAL STAGE OF THIN FILM GROWTH. Kenjiro Oura , Masaru Kubo, Toshiaki Fujino, Mitsuhiro Katayama, Osaka Univ., Dept of Electronic Engineering, Suita, Osaka, JAPAN; Victor G. Lifshits, Alexander A. Saranin, Andrey V. Zotov, Inst of Automation and Control Processes, Vladivostok, RUSSIA.

C3.15
COADSORPTION ON SILICON SURFACE AND SURFACE PHASES FORMATION. Yury Gavriljuk, Alexander Saranin, Victor Lifshits , Inst of Automation & Control Processes, Russian Academy of Sciences, Vladivostok, RUSSIA; Andrew Zotov, Vladivostok Univ, Vladivostok, RUSSIA; Sergey Azatyan, Far East State Univ, Vladivostok, RUSSIA.

C3.16
A STUDY OF THE SURFACE RECONSTRUCTION OF ${\rm Fe_{3}O_{4}}$(100). A.V. Mijiritskii , M.H. Langelaar, D.O. Boerma.

C3.17
THERMODYNAMICS AND KINETICS OF THE TISI₂ PHASES VIA TIGHT BINDING MOLECULAR DYNAMICS. M.Iannuzzi , INFM and University of Milano, ITALY; M. Celino, ENEA, Roma, ITALY; Leo Miglio INFM and University of Milano, ITALY.

C3.18
GROWTH KINETICS OF $\epsilon$-FeSi and $\beta$-FeSi₂. M. Fanciulli and G. Weyer, Institute of Physics and Astronomy, Aarhus University, Aarhus C, DENMARK; A. Zenkevich, Moscow Engineering Physics Institute, Moskow, RUSSIA.

C3.19
IN-SITU MONITORING OF InP ATOMIC LAYER EPITAXY IN METAL-ORGANIC CHEMICAL VAPOR DEPOSITION BY SURFACE PHOTO-ABSORPTION. Tae-Wan Lee , Heedon Hwang, Youngboo Moon, Euijoon Yoon, Seoul National University, School of Materials Science & Engineering, Seoul, KOREA; Young Dong Kim, Kyung Hee University, Dept of Physics, Seoul, KOREA.

C3.20
EFFECT OF INTERFACE ROUGHNESS AND GROWTH TEMPERATURE ON THE ABSORPTION SPECTRUM OF 810 NM REFLECTION MODULATOR ACTIVE LAYERS. Wendy L. Sarney , L. Salamanca-Riba, University of Maryland, Dept. of Materials and Nuclear Engineering, College Park, MD; John D. Bruno, Mary S. Tobin, U.S. Army Reseach Laboratory, Adelphi, MD.

C3.21
MATERIAL AND SURFACE ANALYSIS OF P-TYPE JUNCTIONS IN SILICON FORMED BY RAPID THERMAL DIFFUSION. M. Nolan , T. Perova, R.A. Moore, Dept. of Electrical and Electronic Eng., Trinity College Dublin, IRELAND; H.S. Gamble, Dept. of Electronic Eng., The Queen's University of Belfast, NORTHERN IRELAND.

C3.22
MICROSTRUCTURAL EVOLUTION NEAR THE InGaAs/GaAs STRANSKI-KRASTANOW TRANSITION. R. Leon , Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA; S. Fafard, Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, CANADA.

C3.23
IN-SITU UHV TEM ANNEALING STUDIES OF Ge/Si ISLAND TRANSITIONS. William L. Henstrom , Peter D. Miller, J. Murray Gibson, Univ of Illinois at Urbana/Champaign, Dept of Physics, Urbana, IL.

C3.24
INVESTIGATION OF INTERFACE AND SURFACE SMOOTHNESS AND DEFECT FORMATION IN SiC/Si FILMS GROWN WITH Ge. Wendy L. Sarney , L. Salamanca-Riba, University of Maryland, Dept. of Materials & Nuclear Engineering, College Park, MD; P. Zhou, M. Spencer, Howard University, Materials Science Research Center of Excellence, Washington, D.C.; R.P. Sharma, R.D. Vispute, T. Venkatesan, Center for Superconductivity, University of Maryland, College Park, MD; K. Jones, U.S. Army Research Laboratory, Adelphi, MD.

C3.25
SIMULATION OF SURFACE MORPHOLOGY EVOLUTION IN SILICON GROWTH FROM SILANE. Maurizio Masi , Carlo Cavallotti, Valeria Bertani and Sergio Carra', Dipartimento di Chimica Fisica Applicata, Politecnico di Milano, Milano, ITALY.

C3.26
IN-SITU SYNCHROTRON X-RAY SCATTERING STUDY OF SURFACE AND INTERFACIAL BEHAVIOR DURING THE CRYSTALLIZATION OF a-Si:H FILMS. H.J. Kim , S.H. Jeon, D.Y. Noh, K-JIST, Dept of Materials Science and Engineering, Kwangju, KOREA.

C3.27
EFFECT OF Mo AND MoSi_x INTERLAYERS ON C54 TiSi₂ FORMATION. Shun-ichiro Ohmi , and Raymond T. Tung, Lucent Technologies, Bell Laboratories, Murray Hill, NJ.

C3.28
SURFACE MORPHOLOGY AND STRUCTURE OF InP AND InGaAs FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. L. Li , B.-K. Han, Q. Fu, M. Begarney, D. Law and R.F. Hicks, Chemical Engineering Department, University of California, Los Angeles, CA.

C3.29
THEORETICAL INVESTIGATION OF THE INITIAL OXIDATION OF Si (001) AND THE BAND ALIGNMENT AT THE Si/SiO₂ INTERFACE. A. Demkov , Predictive Engineering Laboratory, Motorola, Inc, Mesa, AZ; O.F. Sankey, Department of Physics, Arizona State University, Tempe, AZ.

C3.30
THE MORPHOLOGY OF INCLUSIONS IN RUTILE NANOPARTICLES. Shirley Turner, Surface and Microanalysis Science Division, Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD.

C3.31
HRTEM CHARACTERIZATION OF STRAIN RELAXATION IN LOW TEMPERATURE ATOMIC LAYER EPITAXY OF INP/INAS/INP HETEROSTRUCTURES. H.H.Kang , L.Salamanca-Riba, Department of Materials and Nuclear Engineering, University of Maryland at College Park, College Park, MD ; M.Beaudoin, L.Isnard, R.A.Maust, GCM and Departement de Genie Physique, Ecole Polytechnique de Montreal, Montreal, Quebec, CANADA.

C3.32
CONTROL OF MINORITY CARRIER RECOMBINATION THROUGH UHV ATOMIC SCALE SURFACE MODIFICATION. Paul G. Evans , Div. of Eng. and Appl. Sciences, Harvard Univ.; Stephen A. McDonald, Rowland Inst. for Science; Jene A. Golovchenko, Div of Eng. and Appl. Sciences, Harvard Univ, Cambridge, MA.

C3.33
INTERFACIAL REACTIONS IN THE FLIP CHIP SOLDER CR/CU/AU - PBSN METALLIZATION SYSTEM. R. Esser and A. Christou, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD.

C3.34
REAL-TIME ELASTIC LIGHT SCATTERING MEASUREMENTS OF III-V SURFACE STRUCTURE EVOLUTION DURING MBE GROWTH. T. Pinnington , M. Adamcyk, A. Ballestad, Y. Levy, J.A. MacKenzie, T. Tiedje, Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, BC, CANADA.

C3.35
ION-BEAM-INDUCED

EPITAXIAL CRYSTALLIZATION OF DIAMOND USING ENERGETIC IONS UP TO 400 keV. M. Ogura , M. Hasegawa, Y. Tanaka and N. Kobayashi, Quantum Radiation Division, Electrotechnical Laboratory, Tsukuba, JAPAN.

C3.36
EFFECT OF SURFACE CARBON AND WET CHEMICAL ETCHING ON THE SURFACE MORPHOLOGY OF LOW-MISCUT (100) SRTIO₃ SINGLE-CRYSTAL SUBSTRATES. Andrew D. Polli , Thomas Wagner, Manfred Rühle, Max-Planck-Institut für Metallforschung, Stuttgart, GERMANY.

SESSION C4: ALLOYS
Chair: Flemming Besenbacher
Tuesday Morning, December 1, 1998
Salon C/D (M)

8:30 AM C4.1
THERMODYNAMICS OF SURFACE-ALLOY FORMATION: Pd-Au ON Ru(0001). Babak Sadigh , Mark Asta, Andreas K. Schmid, Norm C. Bartelt and Robert Q. Hwang, Sandia National Laboratories, Livermore, CA; Andrew A. Quong, Lawrence Livermore National Laboratory, Livermore, CA.

8:45 AM C4.2
TIGHT-BINDING SIMULATIONS OF THE DYNAMICS OF FORMATION OF SILICON-GERMANIUM ALLOYS. Amanda Killen Roberts*, Paul Godwin , Paulette Clancy, School of Chemical Engineering, Cornell University, Ithaca, NY. ^*presently employed at CacheFlow, Seattle, WA.

9:00 AM C4.3
THEORY OF SURFACE SEGREGATION AT Si/SiGe(001). Piotr Boguslawski , IF PAN, Warsaw, POLAND, J. Bernholc, Dept of Physics, NCSU, Raleigh, NC.

9:15 AM C4.4
THEORETICAL INVESTIGATION ON THE INITIAL INCORPORATION PROCESS OF Si ADATOMS ON GaAs(001) SURFACES. Kenji Shiraishi , Tomonori Ito^*, NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, JAPAN, ^*NTT System Electronics Laboratories, Atsugi-shi, Kanagawa, JAPAN.

9:30 AM C4.5
REAL-TIME OBSERVATION OF SOLID-LIQUID INTERFACE IN Al AND Al-Si BY TRANSMISSION ELECTRON MICROSCOPY. H. Saka , S. Tsukimoto, Nagoya University, Dept. of Quantum Engineering, Nagoya, JAPAN; S. Arai, Nagoya University, CIRSE, Nagoya, JAPAN.

9:45 AM BREAK

10:15 AM *C4.6
GROWTH OF ULTRATHIN MAGNETIC FILMS BY PULSED LASER DEPOSITION. Jian Shen , Philippe Ohresser, Min Zheng, Hartmunt Jenniches, Sundar Manoharan, Manfred Klaua, Juegen Kirschner, Max-Planck-Institut fuer Mikrostrukturphysik, Halle/Saale, GERMANY.

10:45 AM *C4.7
ATOMIC AND ELECTRONIC PROPERTIES OF THIN-FILM ALLOY SURFACES. Phillip Sprunger , CAMD, Louisiana State University, Baton Rouge, LA.

11:15 AM C4.8
CO-SEGREGATION AT THE SURFACE OF A Pb-Bi-Ni ALLOY: COMBINED AB INITIO AND MONTE CARLO STUDY. Alex Landa , Paul Wynblatt, Carnegie Mellon Univ, Dept of Materials Science and Engineering, Pittsburgh, PA; Alex Girshick, Vaclav Vitek, Univ of Pennsylvania, Dept of Materials Science and Engineering, Philadelphia, PA; Andrei Ruban, Hans Skriver, Technical Univ of Denmark, Physics Department, DENMARK.

11:30 AM C4.9
ALLOY DECOMPOSITION AND SURFACE INSTABILITIES IN THIN FILMS. Franç ois Léonard^1,2 and Rashmi C. Desai², ¹IBM T.J. Watson Research Center, Yorktown Heights, NY, ²Univ. of Toronto, Dept. of Physics, Toronto, Ontario, CANADA.

11:45 AM C4.10
CHARACTERIZATION OF EXTENDED INTERFACES USING ULTRAFAST LASER ULTRASONICS. C.J.K. Richardson , J.W. Wagner, M.J. Ehrlich and J.B. Spicer, Dept of Materials Science and Engineering, The Johns Hopkins University.

SESSION C5: MORPHOLOGY EVOLUTION
Chair: Jian Shen
Tuesday Afternoon, December 1, 1998
Salon C/D (M)

1:30 PM C5.1
CRYSTALS BY DESIGN: IN-SITU ATOMIC FORCE MICROSCOPY INVESTIGATION OF SURFACE GROWTH MORPHOLOGY AND KINETICS. Terry A. Land ^a,b, Mary T. McBride^b, Jim J. DeYoreo^a, G.Tayhas, R. Palmore^b; ^aLawrence Livermore National Laboratory, Livermore, CA; ^bUniversity of California Davis, Department of Chemistry, Davis, CA.

1:45 PM C5.2
SURFACE DYNAMICS DURING CaCO₃ HOMOEPITAXY DETERMINED BY IN SITU AFM. H. Teng , C. Orme^*, P.M. Dove and J.J. De Yoreo^*, School of Earth and Atmospheric Sciences, Georgia Institute of Technology, Atlanta Georgia; ^*Department of Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, CA.

2:00 PM *C5.3
POST GROWTH MORPHOLOGICAL EVOLUTION IN METALLIC HOMOEPITAXY. Woei Wu Pai , Department of Physics, University of Tennessee at Knoxville and State State Division, Oak Ridge National Laboratory.

2:30 PM C5.4
STUDY OF SURFACE ETCH-FRONT MORPHOLOGY USING LIGHT SCATTERING TECHNIQUES. Y.-P. Zhao , G.-C. Wang, and T.-M. Lu Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY.

2:45 PM C5.5
ANNEALING OF NANO-RIPPLED Si(001) AT LOW TEMPERATURE. Jonah D. Erlebacher , Harvard University, Division of Engineering and Applied Science, Cambridge, MA; Eric Chason, Sandia National Laboratories, Albuquerque, NM; Michael J. Aziz, Harvard University, Division of Engineering and Applied Science, Cambridge, MA.

3:00 PM BREAK

3:30 PM C5.6
ISLAND SIZE DISTRIBUTIONS AND THE GROWTH OF INAS QUANTUM DOTS ON GaAs(001). T.S. Jones , G.R. Bell, P.B. Joyce, T.J. Krzyzewski, B.A. Joyce, D.D. Vvedensky, IRC for Semiconductor Materials, Imperial College, London, UNITED KINGDOM.

3:45 PM *C5.7
PROFILE SCALING IN DECAY OF NANOSTRUCTURES. Daniel Kandel , Dept of Physics of Complex Systems, Weizmann Institute of Science, Rehovot, ISRAEL.

4:15 PM C5.8
DIFFUSION-REACTION MODELS OF NANOSCALE ORDERING PROCESSES. Pita Atala , Dept of Physics, Univ of Maryland, College Park, MD.

4:30 PM C5.9
MODELING AND MEASURING STRAIN IN Ge ISLANDS ON Si (001) BY DIFFRACTION CONTRAST TEM. Peter D. Miller , William L. Henstrom, and J. Murray Gibson, Dept of Physics, University of Illinois at Urbana-Champaign, Urbana, IL.

4:45 PM C5.10
MORPHOLOGY OF ION SPUTTERED SURFACES AND THE NOISY KURAMOTO-SIVASHINSKY EQUATION. J.T. Drotar , Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY.

SESSION C6: ELECTRONIC GROWTH AND ELECTROMIGRATION
Chair: Margret Giesen
Wednesday Morning, December 2, 1998
Salon C/D (M)

8:30 AM C6.1
ELECTRONIC STABILIZATION OF STEPS ON InP(110) SURFACES. Ph. Ebert , M. Heinrich, C. Domke, and K. Urban, Institut fur Festkorperforschung, Forschungszentrum Julich, Julich, Germany.

8:45 AM *C6.2
QUANTUM EFFECTS IN ULTRATHIN METAL OVERLAYER EPITAXY. Zhenyu Zhang , Jun-Hyung Cho, Solid State Division, Oak Ridge National Lab, Oak Ridge, TN; Qian Niu and Chih-Kang Shih, Dept of Physics, Univ. of Texas, Austin, TX; Zhigang Suo, Dept of Mechanical & Aerospace Engineering, Princeton Univ., Princeton, NJ.

9:15 AM BREAK

9:45 AM *C6.3
STEADY-STATE MOTION OF SILICON ISLANDS DRIVEN BY A DIRECT CURRENT. Jean-Jacques Metois , Jean-Claude Heyraud, CRMC2, Marseille, FRANCE; Alberto Pimpinelli, LASMEA Clermont2, Aubriere, FRANCE.

10:15 AM *C6.4
PATTERNS AND RATES IN SUB-MICRON SCALE SURFACE RESTRUCTURING. Ellen D. Williams , Q.J. Gu, D.-J. Liu, J.D. Weeks, S. Das Sarma, Materials Research Science and Engineering Center, University of Maryland, College Park, MD; X.-S. Wang, Hong Kong Univ. of Science and Technology, Clear Water Bay, HONG KONG, Prof. Hyeong-Chai Jeong, Department of Physics, Sejong University, Seoul, KOREA.

10:45 AM C6.5
RESPONSES OF MONOLAYER CLUSTERS TO ELECTROMIGRATION. Olivier Pierre-Louis , T.L. Einstein, Physics Department, University of Maryland, College Park, MD.


11:00 AM C6.6
THEORETICAL ANALYSIS OF VOID-GRAIN BOUNDARY INTERACTION IN METALLIC THIN FILM INTERCONNECT LINES UNDER ELECTROMIGRATION CONDITIONS. M. Rauf Gungor , Department of Chemical Engineering, University of California Santa Barbara, Santa Barbara, CA; William D. Nix, Huajian Gao, John C. Bravman, Department of Materials Science and Engineering, Stanford University, Stanford, CA.

11:15 AM C6.7
RATCHET EFFECT IN SURFACE ELECTROMIGRATION: SMOOTHING SURFACES BY AN AC FIELD. Albert-László Barabási , Choongseop Lee, Department of Physics, University of Notre Dame, Notre Dame, IN; and Imre Derényi, Department of Atomic Physics, Eotvos University, Budapest, HUNGARY.

11:30 AM C6.8
SELF-CONSISTENT THEORETICAL ANALYSIS OF VOID MORPHOLOGICAL EVOLUTION IN METALLIC THIN FILMS UNDER STRESS AND SURFACE ELECTROMIGRATION CONDITIONS. M. Rauf Gungor , Henry S. Ho, and Dimitrios Maroudas, Department of Chemical Engineering, University of California, Santa Barbara, CA.

SESSION C7: DYNAMICS OF ADATOMS, VACANCIES AND CLUSTERS II
Chairs: James B. Hannon and Harald Ibach
Wednesday Afternoon, December 2, 1998
Salon C/D (M)

1:30 PM *C7.1
MOUND FORMATION AND ABSENCE OF COARSENING IN HOMOEPITAXY. Thomas Michely , I. Physikalisches Institut, RWTH Aachen, Aachen, GERMANY; Matthias Kalff, IGV, Forschungszentrum Jülich, Jülich, GERMANY; George Comsa, Institut für Theoretische und Physikalische Chemie, Universität Bonn, Bonn, GERMANY; Pavel Smilauer, Institute of Physics, Praha, CZECH REPUBLIC.

2:00 PM C7.2
IN-SITU NANOCALORIMETERY MEASUREMENTS OF EARLY STAGES OF THIN FILM NUCLEATION AND COARSENING. D.Y. Ban , M. Zhang, S.L. Lai, T.D. Wisleder and L.H. Allen, Dept of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL.

2:15 PM C7.3
QUANTITATIVE ANALYSIS OF SPATIAL DISTRIBUTION OF NUCLEATION SITES: MICROSTRUCTURAL IMPLICATIONS. W.S. Tong , J.M. Rickman and K. Barmak, Lehigh University, Department of Materials Science and Engineering, Bethlehem, PA.

2:30 PM C7.4
REAL-TIME X-RAY SCATTERING STUDIES OF 2-D ISLAND NUCLEATION AND COALESCENCE DURING MOCVD GROWTH OF GaN. G.B. Stephenson , J.A. Eastman, O. Auciello, A. Munkholm, Argonne National Laboratory; C. Thompson, Northern Illinois University and Argonne National Laboratory; P. Fini, S.P. DenBaars, J.S. Speck, University of California, Santa Barbara; P.H. Fuoss, AT&T Laboratories.

2:45 PM BREAK

3:15 PM C7.5
TRENDS IN SURFACE DYNAMICS DURING NEAR-EQUILIBRIUM GROWTH OF CRYSTAL SURFACES BY LOW TEMPERATURE LIQUID PHASE EPITAXY. Jim J. De Yoreo ^a, Terry A. Land ^a,b, Chris Orme ^a, Hui H. Teng ^c, Mary T. Mc Bride^b, Tracie Martin ^b, Patricia M. Dove ^c and G. Tayhas R. Palmore ^b,^a Dept of Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, CA,^b Dept of Chemistry, University of California at Davis, Davis, CA,^c School of Earth and Atmospheric Sciences, Georgia Institute of Technology, Atlanta, GA.

3:30 PM C7.6
ATOMISTIC PROCESSES DURING THE GROWTH OF III-V SEMICONDUCTORS. D.D. Vvedensky , M. Itoh, G.R. Bell, T.S. Jones, and B.A. Joyce, Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London, UNITED KINGDOM; M.F. Gyure, J.H.G. Owen, C. Ratsch, and J.J. Zinck, HRL Laboratories, Malibu, CA.

3:45 PM C7.7
CHARACTERIZATION OF DYNAMIC SURFACE AND MICROSTRUCTURE EVOLUTION IN SPUTTERED Al FILMS. Adriana E. Lita , John E. Sanchez, Jr., Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI.

4:00 PM C7.8
THE CORRELATION BETWEEN MGO (100) SURFACE MORPHOLOGY AND CHEMICAL REACTIVITY. Scott S. Perry , Syed Imaduddin, Oussama El-bjeirami, Philip B. Merrill, Sang Min Lee, and Hyun I. Kim, University of Houston, Department of Chemistry, Houston, TX.

4:15 PM C7.9
SOFT LANDINGS OF Co NANOPARTICLES ON CLEAN Cu AND Ag SURFACES: A COMBINED IN-SITU TEM AND MD STUDY. Claus G. Zimmermann , Mark Yeadon, Mai Ghaly, J. Murray Gibson, Robert S. Averback, University of Illinois, Frederick Seitz Materials Research Laboratory, Urbana/Champaign, IL; Ulrich Herr, Konrad Samwer, Institut für Physik, Universität Augsburg, GERMANY.

4:30 PM C7.10
HREM STUDY OF In AND Mo NANOCRYSTALS AS-DEPOSITED IN UHV-MBE. Qing Chen, Miyoko Tanaka , Kazuo Furuya, National Research Inst for Metals, Tsukuba, Ibaraki, JAPAN.

4:45 PM C7.11
SHAPE TRANSFORMATION AND SURFACE MELTING OF CUBIC AND TETRAHEDRAL PLATINUM NANOCRYSTALS. Zhong L. Wang, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA; Janet M. Petroski , Travis C. Green and Mostafa A. El-Sayed, Laser Dynamics Laboratory, School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA.

SESSION C8: POSTER SESSION:
METALS AND CERAMICS
Wednesday Evening, December 2, 1998
8:00 P.M.
America Ballroom (W)

C8.1
HIGHLY ORDERED NANOMETER SCALE TOPOGRAPHY OF LECTROPOLISHED ALUMINUM SINGLE CRYSTALS. Valery V. Konovalov , Center for Materials for Information Technology, Giovanni Zangari, Dept of Metallurgical & Materials Engineering, Robert M. Metzger, Dept of Chemistry, The University of Alabama, AL.

C8.2
FIRST PRINCIPLES STUDY OF CUBIC NITRIDE EPITAXY ON SiC(001). R. Di Felice , INFM-Universita' di Modena, Modena, ITALY; A. Catellani, CNR-MASPEC, Parma, ITALY; C.M. Bertoni, INFM and Dipartimento di Fisica, Universita' di Modena, Modena, ITALY.

C8.3
SURFACE ROUGHENING AND NANOMETER- SCALE RIPPLE FORMATION DURING ION BEAM EROSION OF Pd(111) SURFACES. U. Geyer, K.P. Reimann, J. Hoffmeister, and A. Rehmet, I. Physikalisches Institut and Sonderforschungsbereich 345, Universitaet Goettingen, Goettingen, GERMANY.

C8.4
ANALYSIS OF THE SAPPHIRE (0001) SURFACE USING LEED-I(V). K.F. McCarty , C.F. Walters and P.D. Tepesch, Sandia National Laboratories, Livermore, CA.

C8.5
AB-INITIO BASED ANALYSIS OF ELECTRON ENERGY-LOSS SPECTRA FOR COMPLEX SYSTEMS. S. Köstlmeier ¹, C. Elsässer¹, and B. Meyer²; ¹ Max-Planck-Institut für Metallforschung, Stuttgart; ²Max-Planck-Institut für Metallforschung, Stuttgart.

C8.6
COMPARATIVE AB-INITIO STUDY OF DIFFERENT HETEROPHASE BOUNDARIES IN THE SYSTEMS M/SPINEL (M = AL, AG). S.K.östlmeier ¹, C. Elsässer¹, B. Meyer², and M.W. Finnis³; ¹ Max-Planck-Institut für Metallforschung, Stuttgart; ²Max-Planck-Institut für Metallforschung, Stuttgart; ³The Queen's University of Belfast, Belfast, UNITED KINGDOM.

C8.7
INTERFACE AND LATTICE DYNAMICS IN GOLD NANOPARTICLES. Stephan Link , Clemens Burda, Mona B. Mohamed, Mostafa A. El-Sayed, Laser Dynamics Laboratory, Georgia Institute of Technology, School of Chemistry and Biochemistry, Atlanta, GA.

C8.8
FIRST PRINCIPLES MOLECULAR DYNAMICS SIMULATIONS OF N ADSORPTION ON $\beta$-SIC(001). A. Catellani, CNR-MASPEC, Parma, ITALY; G. Galli and F. Gygi, Lawrence Livermore National Laboratory, Livermore, CA; R. Di Felice , INFM-Università di Modena, Modena, ITALY; and C.M. Bertoni, INFM and Dipartimento di Fisica, Università di Modena, Modena, ITALY.

C8.9
RIPPLE WAVE VECTOR ROTATION IN ANISOTROPIC CRYSTAL SPUTTERING. Stefano Rusponi, Giovanni Costantini, Corrado Boragno and Ugo Valbusa , INFM - Unità di Ricerca di Genova e Centro di Fisica delle Superfici e delle Basse Temperature del CNR, Dipartimento di Fisica dellíUniversità, Genova, ITALY.

C8.10
THE EFFECT OF Pb ON THE INTERFACE STRUCTURE OF Co/Cu(100) METALLIC MULTILAYERS. Masao Kamiko , Ryuzo Furukawa, Kyu-Young Kim, Ryoichi Yamamoto.

C8.11
STRUCTURE AND DIFFUSION BEHAVIOR OF SULFUR ADSORBED ON Ni(111) AND Ni(100) SURFACE. M. Sugisaki , S. Tsukawaki, K. Hashizume, O. Kuwano and M. Yamashita, Kyushu Univ, Interdisciplinary Graduate School of Engineering Sciences, Dept of Advanced Energy Engineering Sciences, Fukuoka, JAPAN.

C8.12
TWIN-FILM GROWTH MODES WITH CHANGING TEMPERATURE: Au/Ni(111). Kenji Umezawa , Shigemitsu Nakanishi, Osaka Prefecture Univ., Dept. of Materials Sciences, Osaka, JAPAN; Walter M. Gibson, Dept. of Physics, Univ. at Albany, SUNY, Albany, NY.

C8.13
$\it{AB INITIO}$ SIMULATIONS OF OXYGEN INTERACTION WITH Al(111) and Al(100) SURFACES. Patrick W.M. Jacobs, Univ of Western Ontario, Centre for Chemical Physics, London, CANADA; Yuri F. Zhukovskii , Univ of Latvia, Inst of Solid State Physics, Riga, LATVIA; Mauro Causá, Univ of Torino, Dept CIFM, Turin, ITALY.

C8.14
INTERFACIAL COARSENING IN EPITAXIAL GROWTH WITH SLOPE SELECTION. Dorel Moldovan and Leonardo Golubovic, West Virginia University, Physics Dept., Morgantown, WV.

C8.15
THE MAGNETIC STATES OF Fe ON Rh(100) ¹. A.K.Swan , Oak Ridge National Laboratory, Oak Ridge, TN; Chanyong Hwang, Oak Ridge National Laboratory and Korea Research Institute for Standards and Science, Taejon, Korea.

C8.16
STRUCTURE AND GROWTH OF Pd FILMS ON STRONTIUM TITANATE. Thomas Wagner , Gunther Richter, Manfred Ruehle, Max-Plank-Institut fur Metallforschung, Stuttgart, GERMANY.

C8.17
IN-SITU OBSERVATIONS OF CONTACT EPITAXY IN SUPPORTED NANOPARTICLES. Mark Yeadon , M. Ghaly, J.C. Yang, R.S. Averback and J.M. Gibson.

C8.18
IDENTIFICATION OF NEW TYPES OF SURFACE DEFECTS ON RECONSTRUCTED Au(001). ¹ M.A. Gonzá lez, ¹O. Rodríguez de la Fuente, ²J. de la Figuera, ¹J.M. Rojo; ¹Dpt. de Física de Materiales, Universidad Complutense, Madrid, SPAIN; ²Surface Physics Group, Sandia National Lab., Livermore, CA.

C8.19
COMPUTER SIMULATION STUDY OF THE STRUCTURE OF THE LIQUID-VAPOR INTERFACE OF MERCURY AT 20, 100 AND 200⁰. Dmitriy S. Chekmarev , Meishan Zhao, Stuart A. Rice, Department of Chemistry and The James Franck Institute, The University of Chicago, Chicago, IL.

C8.20
AB-INITIO STUDY OF THE Cd/H₂O INTERFACE. D.L. Price , University of Memphis, Dept. of Physics, Memphis, TN; J.W. Halley, University of Minnesota, School of Physics and Astronomy, Minneapolis, MN.

C8.21
DYNAMICS OF PSEUDO-PARTIAL WETTING OF OIL ON SOLID AND LIQUID SUBSTRATES. Dmitry Sarkisov , Levon Esibov, Michael Dabaghian and Albert Steyerl, University of Rhode Island, Physics Department, Kingston, RI.

C8.22
GROWTH STRESS OF EPITAXIAL TITANIUM- AND ALUMINUM-FILMS ON NEARLY SINGLE CRYSTALLINE SUBSTRATES. Paul Oberhauser and Reinhard Abermann, Inst of Physical Chemistry, Univ of Innsbruck, Innsbruck, AUSTRIA.

C8.23
Si/Si₃N₄ NANOPIXELS: A MULTI-MILLION ATOM MOLECULAR DYNAMICS STUDY. Martina E. Bachlechner , Andrey Omeltchenko, Aiichiro Nakano, Rajiv K. Kalia, Priya Vashishta, Concurrent Computing Laboratory for Materials Simulation, Dept. of Physics & Astronomy, Dept. of Computer Science, Louisiana State Univ, Baton Rouge, LA; Ingvar Ebbsjo, University of Uppsala, SWEDEN; Anupam Madhukar, Univ of Southern California, Los Angeles, CA.

C8.24
EQUILIBRIUM-THICKNESS SURFACE AMORPHOUS FILMS IN BISMUTH-DOPED ZINC OXIDE. Jian Luo and Yet-Ming Chiang, Dept of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA.

C8.25
A DIRECT EVIDENCE OF SEGREGATION OF CARBON AT RHENIUM SURFACE. Jinglong Li , Michael J. Bozack, and Ralph H. Zee, Materials Research & Education Center, Auburn University, Auburn, AL; Department of Physics, Auburn University, Auburn, AL.

C8.26
3-D SIMULATION OF MICROSTRUCTURE AND MORPHOLOGY EVOLUTION DURING THE GROWTH OF FACETED FILMS. Xingquan Li , Dept. of Physics, University of Michigan, Ann Arbor, MI; David J. Srolovitz, Dept. of Materials Science & Eng., University of Michigan, Ann Arbor, MI; Peter S. Smereka, Dept. of Mathematics, University of Michigan, Ann Arbor, MI.

C8.27
SUBMICROMETER TOPOGRAPHY OF ION BEAM ERODED GRAPHITE SURFACES STUDIED WITH STM: PERIODIC STRUCTURE FORMATION AND SELF AFFINE ROUGHENING. Sönke Habenicht , Wolfgang Bolse, Klaus-Peter Lieb, Karsten Reimann, Ulrich Geyer, Physikalisches Institut, Georg-August- Universität Göttingen, Göttingen, GERMANY.

C8.28
IN-SITU OBSERVATION OF STRUCTURAL AND MORPHOLOGICAL CHANGES OF IN NANOCRYSTALS DEPOSITED ON Si TEM THIN FILMS WITH UHV-FE-TEM. Miyoko Tanaka , Masaki Takeguchi and Kazuo Furuya, Natl Research Inst for Metals, High Resolution Beam Laboratory, Tsukuba, JAPAN.

C8.29
THE MECHANISM OF DYNAMIC FORCE MICROSCOPY AT A LIQUID-SOLID INTERFACE. Yanzhang Liu and S.M. Lindsay, Dept. of Physics and Astronomy, Arizona State Univerisity, Tempe, AZ.

C8.30
ATOMISTIC SIMULATION OF XE- AND AR- ION ASSISTED CONTROL OF GMR MULTILAYER SURFACE ROUGHNESS. X. W. Zhou , W. Zou, H. N. G. Wadley, Dept of MS&E, University of Virginia, Charlottesville, VA, USA.

C8.31
INTERFACE STRUCTURE IN MULTILAYERS IN AS-DEPOSITED STATE AND AFTER ANNEALING. Anatoly Fedorenko , Valery Kondratenko, Egor Bugaev, Evgeniy Zubarev, Igor Kopylets, Dmitriy Voronov, Kharkiv State Polytechnic Univ, Kharkiv, UKRAINE.

C8.32
CHARGE CONFINEMENT AT METAL-LIQUID INTERFACES. Fredy R. Zypman, Lesser Blum, University of Puerto Rico, PR.

C8.33
ACTIVATION ENERGIES FOR MOTION AND CONVERSION OF AN AD-ATOM, DI-ADATOMS AND TRI-ADATOMS ON COPPER (100) SURFACE. Takayuki Ohmae , Masao Doyama, Yoshiaki Kogure, M. Matsunaga, T. Yokote, Teikyo University of Science & Technology, Uenohara, Yamanashi, JAPAN.

C8.34
DETERMINATION OF MECHANISM AND KINETICS OF INTERFACE PROCESSES FROM THE DISCREET INCLUSION THERMOMIGRATION EXPERIMENTS. V.Yu. Gershanov, G.V. Glushinski , S.I. Garmashov, A.R. Minyaev, Rostov State Univ, Dept of Physics, Rostov-on-Don, RUSSIA.

C8.35
A LOW-ENERGY ALKALI ION SCATTERING STUDY OF CLEAN AND PLATINUM DOSED SINGLE CRYSTAL CeO₂(001) SURFACE. Predrag Radulovic , Charles Feigerle, Dept. of Chemistry, Univ. of Tennessee, Knoxville, TN; Steven Overbury, Oak Ridge National Laboratory, Oak Ridge, TN.

C8.36
AB INITIO SIMULATIONS OF Ag/$\alpha$-Al₂O₃(0001) AND Ag/MgO(100) INTERFACES. Eugene A. Kotomin, Yuri F. Zhukovskii, Univ of Latvia, Inst of Solid State Physics, Riga, LATVIA; Maria Alfredsson , Kersti Hermansson, Uppsala Univ, Inorganic Chemistry Dept, Uppsala, SWEDEN.

SESSION C9: INITIAL GROWTH
Chair: Karina Morgenstern
Thursday Morning, December 3, 1998
Salon C/D (M)

8:30 AM C9.1
INITIAL GROWTH DYNAMICS OF GaAs(001)-(2 x 4) AND InAs(001)-(2 x 4) STRUCTURES. M. Itoh , G.R. Bell, T.S. Jones, B.A. Joyce, and D.D. Vvedensky, Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London, UK.

8:45 AM C9.2
MICROSTRUCTURAL EVOLUTION OF Co THIN FILMS ON GaAs(001). M.A. Mangan , G. Spanos, T. Ambrose, and G.A. Prinz, Materials Science and Technology Division, Naval Research Laboratory, Washington, DC.

9:00 AM *C9.3
STRUCTURAL INSTABILITY OF ELECTROCHEMICALLY PREPARED COPPER THIN FILMS. I. K. Robinson ¹, R. Randler² B. M. Ocko³ and D. M. Kolb²; ¹University of Illinois, Urbana, IL; ²University of Ulm, GERMANY; ³Brookhaven National Laboratory, Brookhaven, NY.

9:30 AM C9.4
Pb UNDERPOTENTIAL DEPOSITION ON Cu(100) AND ITS APPLICATION IN COPPER DEPOSITION. Thomas P. Moffat , MSEL, NIST, Gaitherburg, MD.

9:45 AM BREAK

10:15 AM *C9.5
STRUCTURE AND DYNAMICS OF STRAINED EPITAXIAL Cu FILMS ON Ru(0001) DURING GROWTH. H. Zajonz , D. Gibbs, Brookhaven National Laboratory, Dept. of Physics, Upton, NY; A.P. Baddorf, V. Jahns, D.M. Zehner, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN.

10:45 AM C9.6
ROLE OF FLUCTUATIONS FOR ISLAND SIZE DISTRIBUTIONS DURING SUBMONOLAYER EPITAXY. C. Ratsch , M.F. Gyure, HRL Laboratories, Malibu, CA; B. Merriman, M. Kang, UCLA, Los Angeles, CA; D.D. Vvedensky, Imperial College, London, UNITED KINGDOM.

11:00 AM C9.7
A NOVEL REAL-TIME TECHNIQUE FOR MONITORING ADATOM SURFACE DIFFUSION AND ISLAND NUCLEATION. P.M. DeLuca , S.A. Barnett, Northwestern University, Dept. of Materials Science and Engineering, Northwestern University, Evanston, IL.

11:15 AM C9.8
A NOVEL NUCLEATION AND GROWTH BEHAVIOR OF GERMANIUM ISLANDS ON SILICON SURFACES. Ing-Shouh Hwang , Tien-Chih Chang, Tien T. Tsong, Inst of Physics, Academia Sinica, Nankang, Taipei, TAIWAN.

11:30 AM C9.9
BI: PERFECT SURFACTANT FOR Ge GROWTH ON Si(111). J. Falta , T. Schmidt, G. Materlik, Hamburger Synchrotronstrahlungslabor (HASYLAB) am Deutschen Elektronen-Synchrotron (DESY), Hamburg, GERMANY; J. Zeysing, R.L. Johnson II, Institut fuer Experimentalphysik, Universitaet Hamburg, Hamburg, GERMANY.

11:45 AM C9.10
EPITAXIAL AND SMOOTH Cu FILMS MBE GROWN ON Si(100). Rosa A. Lukaszew , Yongning Sheng, Ctirad Uher, Roy Clarke, University of Michigan, Physics Department, Ann Arbor, MI.

SESSION C10: THEORY
Chairs: Matthias Scheffler and Ellen D. Williams
Thursday Afternoon, December 3, 1998
Salon C/D (M)

1:30 PM C10.1
FIRST-PRINCIPLES CALCULATIONS OF THE VIBRATIONAL PROPERTIES OF THE Mg(0001) AND Be(0001) SURFACES. Jeffrey D. Althoff, Department of Materials Science and Mineral Engineering, University of California, Berkeley, Andrew A. Quong , Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, CA.

1:45 PM C10.2
RELAXATION AND RUMPLING ON Ca SEGREGATED MgO (001) SURFACES. Y. Yan , M.F. Chisholm, S.J. Pennycook and S.T. Pantelides*, Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN; * also Department of Physics, Vanderbilt University, Nashville, TN.

2:00 PM *C10.3
SURFACE PHONONS, ANHARMONICITY AND THERMAL EXPANSION OF METAL SURFACES-A DENSITY-FUNCTIONAL THEORY STUDY OF QUANTITATIVE VALUES AND UNDERLYING MECHANISM. Jianjun Xie , S.P. Chen, Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM; Stefano de Gironcoli, Stefano Baroni, SISSA, Trieste, ITALY; Matthias Scheffler, Fritz-Haber-Institut der MPG, Berlin, GERMANY.

2:30 PM BREAK

3:00 PM C10.4
DIFFUSION OF ADATOM AND ADDIMER ON THE SI(100) SURFACE. Gun-Do Lee, C. Z. Wang , Z. Y. Lu, K. M. Ho, Ames Lab - USDOE and Dept of Physics, Iowa State University, Ames, IA.

3:15 PM C10.5
STRUCTURE OF SURFACES AND VOIDS IN AMORPHOUS SILICON. Martin Z. Bazant , Dept. of Mathematics, M. I. T.; Efthimios Kaxiras, Dept. of Physics, Harvard Univ.; D. Papaconstantopoulos and M. Mehl, Complex Systems Theory Branch, Naval Research Lab, Washington DC.

3:30 PM C10.6
ON ICOSAHEDRAL STRUCTURE OF TRANSITION METAL CLUSTERS AND THEIR PHONON PROPERTIES. Gregorio D'Agostino ENEA CR Casaccia, Innovation Department, Roma, ITALY.

3:45 PM C10.7
COMPUTER SIMULATION STUDY OF THE STABILITY OF THE Au(111) SURFACE. T.M. Trimble , R.C. Cammarata, Johns Hopkins University, Dept. of Materials Science and Engineering, Baltimore, MD and University of Maryland, Dept. of Physics, College Park, MD; E.D. Williams; University of Maryland, Dept. of Physics, College Park, MD; K. Sieradzki, Arizona State University, Dept. of Mechancial and Aerospace Engineering, Tempe, AZ.

4:00 PM C10.8
EMBEDDED ATOM MODEL OF THE SURFACE-ELECTROLYTE INTERFACE FOR METAL ELECTRODES. Michael I. Haftel and Mervine Rosen, Naval Research Laboratory, Washington, DC.

4:15 PM C10.9
SPIRAL SURFACE GROWTH WITHOUT DESORPTION. Alain Karma and Mathis Plapp , Physics Department and Center for Interdisciplinary Research on Complex Systems, Northeastern University, Boston, MA.

4:30 PM C10.10
MOLECULAR DYNAMICS SIMULATION ON THE SURFACE DIFFUSION DURING THE EPITAXIAL GROWTH PROCESS OF METAL OXIDES. Momoji Kubo , Yasunori Oumi, S. Salai Cheettu Ammal, Kazuo Teraishi, Akira Miyamoto, Tohoku Univ., Graduate School of Eng., Sendai, JAPAN; Masashi Kawasaki, Tokyo Inst. of Technol., Interdisciplinary Graduate School of Eng., Yokohama, JAPAN; Mamoru Yoshimoto, Tokyo Inst. of Technol., Materials and Structures Lab., Yokohama, JAPAN; Hideomi Koinuma, Tokyo Inst. of Technol., Materials and Structures Lab., and CREST-JST, Yokohama, JAPAN.

4:45 PM C10.11
AB-INITIO FRACTURE SIMULATION OF AN AMORPHOUS SEMICONDUCTOR. Giulia Galli , Francois Gygi, Lawrence Livermore Nat'l Lab., Livermore, CA; Alessandra Catellani, MASPEC, Parma, ITALY

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