No Title

SYMPOSIUM Q

Semiconductor Process and Device Performance Modeling

December 2 - 3, 1997

Chairs
Scott Dunham Boston Univ
Jeffrey Nelson Sandia National Laboratories
Craig Wilson SILVACO International Inc

* Invited paper

SESSION Q1: SEMICONDUCTOR BULK PROCESS MODELING-1
Chair: Scott T. Dunham
Tuesday Morning, December 2, 1997
Independence East (S)

8:30 AM *Q1.1
ATOMIC SCALE MODELING OF BORON IMPLANTATION AND TRANSIENT ENHANCED DIFFUSION IN SILICON. Tomas Diaz de la Rubia , Maria Jose Caturla, Mark D. Johnson and Jing Zhu, Lawrence Livermore National Laboratory, Livermore, CA.

9:00 AM Q1.2
REDUCTION OF TRANSIENT DIFFUSION FROM 1-5 keV Si ION IMPLANTATION DUE TO SURFACE ANNIHILATION OF INTERSTITIALS. Aditya Agarwal , Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN, and Bell Laboratories, Silicon Processing Research Dept., Murray Hill, NJ; H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, Bell Laboratories, Silicon Processing Research Dept., Murray Hill, NJ; T. E. Haynes, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; J. Jackson and Yu. E. Erokhin; Eaton Corporation, Beverly, MA.

9:15 AM Q1.3
3D ATOMISTIC SIMULATIONS OF DEEP SUBMICRON DEVICE FABRICATION. Marius M. Bunea , Boston Univ., Dept of Physics, Boston, MA; Scott T. Dunham, Boston Univ., Dept. of Electrical and Computer Engineering, Boston, MA.

9:30 AM Q1.4
MODELING ARSENIC DEACTIVATION IN HEAVILY DOPED SILICON. M. A. Berding , A. Sher, SRI International, Applied Physical Sciences, Menlo Park, CA.

9:45 AM BREAK

10:15 AM Q1.5
TIGHT BINDING COMPUTER SIMULATION STUDIES OF BORON CLUSTERS IN CRYSTALLINE SILLICON. Weiwei Luo, Paul B. Rasband and Paulette Clancy , School of Chemical Engineering, Cornell University, Ithaca. NY.

10:30 AM Q1.6
A NEW PRACTICAL APPROACH TO IMPLEMENT A TRANSIENT ENHANCED DIFFUSION MODEL INTO AN FEM-BASED 2-D PROCESS SIMULATOR. Noriyuki Sugiyasu , Kaina Suzuki, Syuichi Kojima, Yasushi Ohyama and Hiroshi Goto; Fujitsu Limited, Kawasaki, JAPAN.

10:45 AM Q1.7
SILICON SELF-INTERSTITIAL EFFECTIVE DIFFUSIVITY IN THE PRESENSCE OF CARBON. M. D. Johnson , T. Diaz de la Rubia, Lawrence Livermore National Lab, Livermore CA.

11:00 AM Q1.8
ATOMISTIC MODELING OF ION IMPLANTATION WITHIN A 2D PROCESS SIMULATOR. B. Schmidt and M. Posselt, FZ Rossendorf, Inst. f. Ionenstrahlphysik und Materialforschung; N. Strecker, Swiss Federal Institute of Technology, Integrated Systems Laboratory; T. Feudel, ISE Integrated Systems Engineering AG.

11:15 AM Q1.9
COMPUTATIONALLY EFFECTIVE MODEL FOR 2D ION IMPLANTATION SIMULATION. Misha Temkin and Ivan Chakarov, SILVACO International, Inc., Santa Clara, CA.

11:30 AM Q1.10
A THREE-DIMENSIONAL MONTE CAROL MODEL FOR PHOSPHORUS IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON. Myung-Sik Son , Ho-Jung Hwang, Semiconductor Process and Device Laboratory, Dept. of Electronics Engineering, Chung-Ang, University, Seoul, SOUTH KOREA.

11:45 AM Q1.11
FIRST-PRINCIPLES CALCULATION OF DISPLACEMENT-THRESHOLD ENERGIES IN Si AND SiC. Wolfgang Windl , Thomas J. Lenosky, Joel D. Kress, and Arthur F. Voter, Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM.

SESSION Q2: SEMICONDUCTOR BULK PROCESS MODELING-2
Chair: Ulrich M. Goesele
Tuesday Afternoon, December 2, 1997
Independence East (S)

1:30 PM *Q2.1
ATOMIC DYNAMICS DURING SI OXIDATION AND THE NATURE OF DEFECTS AT THE SI-SIO INTERFACE. S. T. Pantelides and M. Ramamoorthy, Department of Physics and Astronomy, Vanderbilt University, Nashville, TN.

2:00 PM Q2.2
A STUDY OF DEGRADATION IN SILICON DIOXIDE FILMS BY FOWLER-NORDHEIM STRESS: NEW MODEL AND EXPERIMENTAL PROCEDURE. Alexander E. Kotov , Angstrem Co., Moscow, RUSSIA.

2:15 PM Q2.3
PHYSICAL MODEL AND COMPUTER SIMULATION RESULTS OF DEGRADATION OF THE Si/SiO STRUCTURE DURING ANNEALING AND HYDROGEN PLASMA TREATMENT. Grigorii V. Gadiyak , Institute of Computational Technologies, Russian Academy of Sciences, Siberian Division, Novosibirsk, RUSSIA.

2:30 PM Q2.4
NUCLEATION AND GROWTH OF VOIDS IN SILICON. P. Plekhanov , U. Goesele, T.Y. Tan, Department of Mechanical Engineering, Duke University, Durham, NC.

2:45 PM BREAK

3:15 PM *Q2.5
THE APPLICATION OF GaAs TCAD IN INDUSTRY. Peter Blakey , Deepak, Karl Johnson, Cyndi Recker and Subadra Varadarajan, Simulation Group, Communication Products Laboratory, Motorola, Tempe, AZ.

3:45 PM Q2.6
MODELING OF ATOMIC DIFFUSION AND SEGREGATION IN SEMICONDUCTOR HETEROSTRUCTURES. Hartmut Bracht , W. Walukiewicz and E.E. Haller. Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, CA.

4:00 PM Q2.7
SIMULATION OF SILICON IN- AND OUTDIFFUSION PROCESSES IN GALLIUM ARSENIDE. C.-H. Chen , U. Goesele, T.Y. Tan, Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC.

4:15 PM Q2.8
MODELING OF THE SURFACE ANNIHILATION OF EXCESS SELF-INTERSTITIALS GENERATED BY GOLD DIFFUSION INTO SILICON. Nicolaas Stolwijk , Wilfried Lerch, Axel Giese, Univ Muenster, Inst f Metallforschung, Muenster, GERMANY.

4:30 PM Q2.9
GOLD DIFFUSION IN SILICON DURING GETTERING BY AN ALUMINUM LAYER. S. M. Joshi , U. Goesele, T. Y. Tan, Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC.

4:45 PM Q2.10
DEFECT REACTIONS INDUCED BY REACTIVE ION ETCHING. Song Zhao , Lionel C. Kimerling, Dept. of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA.

SESSION Q3: POSTER SESSION
Chair: Craig D. Wilson
Tuesday Evening, December 2, 1997
8:00 P.M.
Grand Ballroom (S)

Q3.1
HIGH TEMPERATURE IN-SITU TEM STUDY OF DEFECT EVOLUTION IN Si IMPLANTED SILICON. Jing-Hong Li and Kevin S. Jones.

Q3.2
TOWARDS THE OPTIMIZATION OF AMT BARREL REACTORS FOR SILICON EPITAXY. Maurizio Masi , Guido Radaelli, Sergio Carra', Politecnico di Milano, Milano, ITALY; Giovanni Vaccari, Danilo Crippa, MEMC Electronic Materials, Novara, ITALY.

Q3.3
MODELLING OF LIQUID-PHASE EPITAXY PROCESSES. Ludmil Zambov , Univ. of Chemical Technology and Metallurgy, Dept. of Semiconductors, Sofia, BULGARIA; Cyril Popov, Central Lab. of Photoprocesses, Bulgarian Academy of Sciences, Sofia, BULGARIA; Borislav Ivanov, Peter Babanov, Univ. of Chemical Technology and Metallurgy, Dept. of Semiconductors, Sofia, BULGARIA.

Q3.4
THE EFFECT OF THE BANDGAP HETEROGENEITY ON DISORDERING OF III-V COMPOUND SUPERLATTICES. C.-H. Chen , U. Goesele, T.Y. Tan, Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC.

Q3.5
CHARGE TRANSFER MODELING FOR CHARGE-COUPLED DEVICES. James P. Lavine , Edmund K. Banghart, Eugene A. Trabka, Microelectronics Technology Div., Eastman Kodak Co., Rochester, NY; David J. Schneider, Cornell Theory Center, Cornell Univ., Ithaca, NY.

Q3.6
INFLUENCE OF RTP ON VACANCY CONCENTRATIONS. Michael Jacob, Fraunhofer-Institut fur Integrierte Schaltungen, Bauelementetechnologie, Erlangen, GERMANY; Current address: Siemens AG, HL PI R, Regensburg, GERMANY; Peter Pichler , Fraunhofer-Institut fur Integrierte Schaltungen, Bauelementetechnologie, Erlangen, GERMANY; Michael Wohs, Lehrstuhl fur Elektronische Bauelemente, Universitat Erlangen-Nurnberg, Erlangen, GERMANY; Heiner Ryssel, Fraunhofer-Institut fur Integrierte Schaltungen, Bauelementetechnologie and Lehrstuhl fur Elektronische Bauelemente, Universitat Erlangen-Nurnberg, Erlangen, GERMANY; Robert Falster, MEMC Electronic Materials SpA, Novara, ITALY.

Q3.7
TWO-DIMENSIONAL DOPANT DELINEATION BY SELECTIVE CHEMICAL ETCHING. Kwang-Ki Choi , Tae-Yeon Seong, Dept of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 506-712, KOREA.

Q3.8
ION IMPLANTATION IN SILICON: EFFECT OF A FREE SURFACE ON DEFECT PRODUCTION. Jeffrey M. Finder, James B. Adams , Arizona State University, Dept of Chemical, Bio, and Materials Engineering, Tempe, AZ.

Q3.9
COMPUTER MODELING OF ENHANCED GROWTH OF BURIED OXIDE IN SILICON OBTAINED BY COMBINED ION IMPLANTATION. Alexey Efremov, Vladimir Litovchenko , Boris Romanyuk, Institute of Semiconductor Physics NAS of Ukraine, Kiev, UKRAINE.

Q3.10
AUGER MECHANISM IN A GaInAsSb INFRARED PHOTOVOLTAIC DETECTOR. Tian Yuan , Zhou Tianming, Zhang Baolin, Jin Yixin, Ning Yongqiang, Jiang Hong, Yuan Guang.

Q3.11
INFLUENCE OF SHALLOW DONORS ON Er-RELATED ELECTROLUMINESCENCE IN SILICON. Sergey Sobolev , Ioffe Physical-Technical Inst, Dept of Solid State Electronics, St. Petersburg, RUSSIA.

Q3.12
MODELING OF TRANSIENT ENHANCED DIFFUSION OF BORON USING KINETIC MONTE CARLO AND CONTINUUM RATE EQUATIONS. M.-J. Caturla , M. Johnson, J. Zhu, T. Diaz de la Rubia, Lawrence Livermore National Laboratory, Livermore, CA; A.D. Lilak, M. E. Law, Dept. of ECE, University of Florida, Gainesville, FL; and M.D. Giles, Intel Corporation, TCAD Dep., Santa Clara, CA.

Q3.13
SIMULATION STUDY OF IBE PROCESS FOR III-V COMPOUNDS IN MESA AND TRENCHES. Lionel Houlet, Ahmed Rhallabi , Guy Turban, Laboratoire des Plasmas et des Couches Minces, Institut des Materiaux de Nantes, FRANCE.

Q3.14
MODELLING OF REFLOW PROCESSES OF INTERMETAL DIELECTRIC DURING PLANARIZATION OF MOS INTEGRATED CIRCUITS. Ludmil Zambov , Georgi Peev, Univ. of Chemical Technology and Metallurgy, Dept. of Semiconductors, Sofia, BULGARIA.

Q3.15
COMPUTER SIMULATION OF THERMOMIGRATION PROCESS. V.Yu.Gershanov , S.I.Garmashov, A.R.Minyaev, Physics Department, Rostov State University, Rostov on Don, RUSSIA.

Q3.16
LIGHT-CONTROLLED SWITCHING TRANSIENTS IN MIS SILICON STRUCTURES WITH MULTICHANNEL INSULATOR: PHYSICAL PROCESSES AND NEW DEVICES MODELLING. Alexander Malik , Rodrigo Martins, FCT-UNL/CEMOP-UNINOVA, Monte de Caparica, PORTUGAL.

Q3.17
THEORETICAL MODELING AND IMPROVED THERMOELECTRIC PROPERTIES IN (111) AND (001) ORIENTED PbTe/PbEuTe MQWs. Takaaki Koga , Harvard Univ., Div. of Engineering and Applied Sciences, Cambridge, MA; S.B. Cronin, X. Sun, MIT, Dept. of Physics, Cambridge, MA; T.C. Harman, MIT, Lincoln Laboratory, Lexington, MA; M.S. Dresselhaus, MIT, Dept. of Electrical Engineering and Computer Science
and Dept. of Physics, Cambridge, MA.

SESSION Q4: SEMICONDUCTOR EQUIPMENT MODELING
Chair: Klavs F. Jensen
Wednesday Morning, December 3, 1997
Independence East (S)

8:30 AM *Q4.1
CHEMICAL KINETICS MODELS FOR SEMICONDUCTOR PROCESSING. Michael E. Coltrin , Sandia National Laboratories, Albuquerque, NM.

9:00 AM Q4.2
REACTION PATHWAYS UNDERLYING IN SITU BORON DOPING OF SILICON. Istvan Lengyel , Klavs F. Jensen, MIT, Chemical Engineering Department, Cambridge, MA.

9:15 AM Q4.3
3-D MODELING OF MOCVD GROWTH IN THE In-Ga-As-P SYSTEM IN A HORIZONTAL REACTOR. M. Dauelsberg, L. Kadinski , P. Kaufmann, C. Lindner, Yu. N. Makarov, Institute of Fluid Mechanics, University of Erlangen-Nürnberg, GERMANY.

9:30 AM Q4.4
ROBUST REACTION-TRANSPORT MODELS OF MOVPE REACTORS. T.J. Mountziaris , C. Theodoropoulos, State Univesity of New York, Dept of Chemical Engineering, Buffalo NY; H.K. Moffat, Sandia National Laboratories, Albuquerque NM.

9:45 AM BREAK

10:15 AM Q4.5
FINITE ELEMENT ANALYSIS OF A CLOSE-SPACED MOCVD REACTOR. , D.W. Weyburne, US Air Force Research Laboratory, Hanscom AFB, MA; Q.S. Paduano, US Air Force Research Laboratory, Hanscom AFB, MA/Tufts University, Medford, MA.

10:30 AM Q4.6
MULTISCALE ANALYSIS OF MICROLOADING DURING CHEMICAL VAPOR DEPOSITION. Seth T. Rodgers and Klavs F. Jensen Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge MA

10:45 AM Q4.7
OPTIMAL DESIGN OF STAGNATION FLOW MOVPE REACTORS WITH AXISYMMETRIC MULTI-APERTURE INLETS. C. Theodoropoulos , V. Gupta, J.D. Peck, T.J. Mountziaris, State University of New York, Dept of Chemical Engineering, Buffalo, NY.

11:00 AM Q4.8
A THEORETICAL STUDY ON THE FUNDAMENTAL CHEMICAL REACTIONS IN TITANIUM PLASMA-ENHANCED CVD. Ken-ichiro Tsuda , NEC Corporation, Fundamental Research Labs, Tsukuba, JAPAN; Koji Watanabe, Yoshio Ohshita, NEC Corporation, Microelectronics Research Labs, Tsukuba, JAPAN; Toshikazu Takada, NEC Corporation, Fundamental Research Labs, Tsukuba, JAPAN.

11:15 AM Q4.9
USE OF RIGOROUS THREE-DIMENSIONAL ELECTROMAGNETIC SIMULATION TO EVALUATE THE EFFECTIVENESS OF OPTICAL PROXIMITY CORRECTION FOR NONPLANAR LITHOGRAPHY. Michael Yeung and Eytan Barouch, Boston University, Department of Manufacturing Engineering, Boston, MA.

11:30 AM Q4.10
MODELLING ANAYLSIS OF OXYGEN TRANSPORT DURING CZOCHRALSKI GROWTH OF SILICON CRYSTALS. Yu.E. Egorov, Yu.N. Makarov , Fluid Mechanics Institute, University of Erlangen-Nürnberg, Erlangen, GERMANY; E.A. Rudinsky, E.M. Smirnov, Department of Hydroaerodynamics, State Technical University of St. Petersburg, RUSSIA; A.I. Zhmakin, A.F. Ioffe Physical Technical Institute, St. Petersburg, RUSSIA.

SESSION Q5: SEMICONDUCTOR TOPOGRAPHY MODELING
Chair: Carl V. Thompson
Wednesday Afternoon, December 3, 1997
Independence East (S)

1:30 PM *Q5.1
THE ROLES OF 3D/3D AND 3D/2D TOPOGRAPHY SIMULATORS IN VIRTUAL SEMIDCONDUCTOR FABS. Timothy S. Cale , Department of Chemical, Bio & Materials Engineering, Arizona State University, Tempe, AZ.

2:00 PM Q5.2
AN ATOMIC-SCALE DERIVED CONTINUOUS APPROACH FOR THE ANISOTROPIC ETCHING. Nicolaie Moldovan *, Sorin Nedelcu*, Henri Camon**, * Institute of Microtechnology, Bucharest, ROMANIA; ** LAAS/CNRS Toulouse, FRANCE.

2:15 PM Q5.3
EXPERIMENTAL ETCH DATA FOR PROCESS MODELING AND TOPOGRAPHY SIMULATION IN SUB-HALF-MICRON METAL ETCH PROCESS DEVELOPMENT. Thomas Schuelke , Raymond Joy, Paul Ho Kwok Keung, V. Premachandran, Lee Wai Lok, Ramasamy Chockalingam, and Tuan Ba Pham, Chartered Semiconductor Manufacturing Ltd., Singapore, SINGAPORE.

2:30 PM Q5.4
MODELING OF GRAIN STRUCTURE EVOLUTION AND ITS IMPACT ON THE RELIABILITY OF Al(Cu) THIN FILM INTERCONNECTS. Stefan P. Riege , Vaibhav Andleigh, and Carl V. Thompson, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA; Harold J. Frost, Thayer School of Engineering, Dartmouth College, Hanover, NH.

2:45 PM Q5.5
CREATION AND MODELING OF FOCUSED ION BEAM ETCHED PROFILES IN GaAs(001). Amol Kalburge , A. Konkar, P. Chen, and A. Madhukar, Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA.

3:00 PM BREAK

SESSION Q6: SEMICONDUCTOR CHARACTERIZATION AND DEVICE MODELING
Chair: Jeffrey S. Nelson
Wednesday Afternoon, December 3, 1997
Independence East (S)

3:30 PM *Q6.1
ELECTRON SPIN RESONANCE CHARACTERIZATION OF DEFECTS FOR OXIDE MODEL DEVELOPMENT AND VERIFICATION. John F. Conley, Jr. , Dynamics Research Corporation, Beaverton, OR; R.J. Milanowski, Vanderbilt University, Nashville, TN; H. Walker, M. Pagey, W. McArthur, Dynamics Research Corporation at NRaD, San Diego, CA; and C.J. Nicklaw, Dynamics Research Corporation, Beaverton, OR.

4:00 PM Q6.2
EFFECTS OF COMPOSITIONAL SEGREGATION AND SHORT CHANNEL ON THRESHOLD VOLTAGE OF N-MOSFETs. Julie Y.H. Lee , Tom C.H. Lee, Mike Embry, Keenan Evans, Dan Koch, Robert Tucker, Motorola Inc, Semiconductor Product Sector, Phoenix, AZ.

4:15 PM Q6.3
MODELING AND 2D NUMERICAL SIMULATION OF TRANSIENT PHENOMENA IN FLOATING BODY SOI MOSFET. Adrian M. Ionescu , Frederique Chaudier, Alain Chovet, LPCS, ENSERG, Grenoble, FRANCE.

4:30 PM Q6.4
NUMERICAL SIMULATIN OF AlGaN/GaN HETEROJUNCTION FIELD EFFECT TRANSISTORS. Mahesh S. Krishnan , Neil Goldsman, Aris Christou, University of Maryland, College Park, MD.

4:45 PM Q6.5
NEW APPROACH TO QUANTITATIVE MOBILITY SPECTRUM ANALYSIS. I. Vurgaftman , J. R. Meyer, C. A. Hoffman, Code 5613, Naval Research Laboratory, Washington, DC; D. Redfern, J. Antoszewski, L. Faraone, The University of Western Australia, Nedlands, AUSTRALIA; J. R. Lindemuth, and D. S. Holmes, Lake Shore Cryotronics, Inc., Westerville, OH.

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