Chairs
| Leonid Tsybeskov |
|
New Jersey Institute of Technology |
| David J. Lockwood |
|
National Research Council Canada |
| Christophe Delerue |
|
IEMN |
| Masakazu Ichikawa |
|
University of Tokyo |
Symposium Support
Freescale Semiconductors
Hamamatsu Corp.
Proceedings
to be published in both book form and online
(see ONLINE PUBLICATIONS at www.mrs.org)
as volume 832
of the Materials Research Society
Symposium Proceedings Series.
* Invited paper
SESSION F1: Nanoscale Silicon-Based Photonic Systems
Chairs: David Lockwood and D. Norris
Monday Morning, November 29, 2004
Constitution B (Sheraton)
8:30 AM INTRODUCTION
8:45 AM *F1.1
Silicon-Based Integrated Optics: Waveguide Technology to
Microphotonics. Siegfried Janz1, Pavel
Cheben1, Andre Delage1, Boris Lamontagne1,
Marie-Josee Picard1, Dan-Xia Xu1, Kuan-Pei
Yap2 and Winnie Ye2; 1Inst.
for Microstructural Sciences, National Research Council Canada,
Ottawa, Ontario, Canada; 2Dept. of Electronics, Carleton
University, Ottawa, Ontario, Canada.
9:15 AM F1.2
Light Confinement in Sub-Wavelength Regions via Anderson
Localization in High Index Contrast All-Dielectric Structures.
Jacob Thomas Robinson1, Christina Manolatou1,
Michal Lipson1 and Hod Lipson2; 1Electrical
and Computer Engineering, Cornell University, Ithaca, New York;
2Mechanical and Aerospace Engineering, Cornell University,
Ithaca, New York.
9:30 AM F1.3
Si-rich Si3N4/SiO2 CMOS Compatible Light Emitting Complex
Photonic Structures Luca Dal Negro, Jae Hyung Yi,
Yasha Yi, Xiaoman Duan, Jurgen Michel and Lionel C. Kimerling;
MIT, Cambridge, Massachusetts.
9:45 AM *F1.4
Silicon Self-Assembled Photonic Band Gap Crystals David
J. Norris, Chem. Eng. & Mat. Sci., Univ. of Minnesota,
Minneapolis, Minnesota.
10:15 AM BREAK
10:30 AM F1.5
Optically Controlled Photonic Crystal Nanocavity in Silicon.
Stefan Francis Preble, Vilson Almeida and Michal Lipson;
Electrical and Computer Engineering, Cornell University, Ithaca,
New York.
10:45 AM F1.6
Photoluminescent Coupled Multiple Microcavity Structures
from Porous Silicon. Vivechana Agarwal and Jose Alfredo
Soto Urueta; CIICAP-Universidad Autonoma del Estado de Morelos,
Cuernavaca, Mexico.
11:00 AM F1.7
Compact Electro-Optic Modulator on Silicon-on-Insulator Platform.
Sameer Pradhan, Vilson Almeida and Michal Lipson; School
of Electrical & Computer Engineering, Cornell University,
Ithaca, New York.
11:15 AM F1.8
DNA Biosensor Based on Highly Confining Silicon Photonic
Micro-Cavity. Bradley Schmidt, Vilson Almeida and
Michal Lipson; Electrical and Computer Engineering, Cornell
University, Ithaca, New York.
11:30 AM F1.9
Raman Gain in Silicon Using Highly Confined Waveguide Structure.
Qianfan Xu, Vilson R. Almeida and Michal Lipson; Cornell
University, Ithaca, New York.
11:45 AM F1.10
One-dimensional photonic band gap superstructures based on porous
silicon Denis G. Gusev, Andrey A Fedyanin and Oleg A Aktsipetrov;
Physics Department, Moscow State University, Moscow, Russian
Federation.
SESSION F2: Si/SiGe Heterostructures and
Devices
Chairs: E. A. Fitzgerald and Leonid Tybeskov
Monday Afternoon, November 29, 2004
Constitution B (Sheraton)
1:30 PM *F2.1
Formation of High Quality SiGe Hetero-Structures and their
New Device Applications. Yasuhiro Shiraki, Advanced
Research Laboratories, Musashi Institute of Technology, Tokyo,
Japan.
2:15 PM F2.2
Direct Spectroscopy of the Valley Splitting in a Silicon/Silicon-Germanium
Two Dimensional Electron Gas. Srijit Goswami1,
J. L. Truitt1, Charles Tahan1, L. J. Klein1,
K. A. Slinker1, D. W. van der Weide2,
S. N. Coppersmith1, Robert Joynt1, R.
H. Blick2, J. O. Chu3, J. A. Ott3,
P. M. Mooney3 and M. A. Eriksson1; 1Physics,
University of Wisconsin-Madison, Madison, Wisconsin; 2Electrical
and Computer Engineering, University of Wisconsin-Madison, Madison,
Wisconsin; 3IBM Research Division, T.J. Watson Research
Center, Yorktown, New York.
2:30 PM F2.3
Formation of Ge Nanostructures by Phase Separation During
MOVPE of (III-V)1-x(Ge2)x Alloys.
Andrew Gordon Norman, Jerry M. Olson, Manuel J. Romero,
Pat Dippo and Mowafak Al-Jassim; National Renewable Energy Laboratory,
Golden, Colorado.
2:45 PM *F2.4
High Mobility SiGe Heterostructures. Eugene Arthur
Fitzgerald, Materials Science and Engineering, MIT, Cambridge,
Massachusetts.
3:15 PM BREAK
3:30 PM *F2.5
Towards Heterogeneous Integration of Semiconductor Nanostructures
-- SiGe on Si Kang L. Wang, Hyung-jun Kim, Song Tong
and Fei Liu; Electrical Engineering Department, University of
California-Los Angeles, Los Angeles, California.
4:00 PM F2.6
Structural and Optical Properties of SnxGe1-x
Quantum Dots and Quantum Wires. Jordana Bandaru,
Douglas Bell and Shouleh Nikzad; Jet Propulsion Laboratory,
Pasadena, California.
4:15 PM F2.7
Time-Resolved Photoluminescence in Si/SiGe Nanostructures.
Boris Kamenev1, Jean-Marc Baribeau2,
David Lockwood2 and Leonid Tsybeskov1;
1Electrical and Computer Engineering, New Jersey
Institute of Technology, Newark, New Jersey; 2Institute
for Microstructural Sciences, National Research Council, Ottawa,
Ontario, Canada.
4:30 PM F2.8
Top-gated Quantum Dots in Silicon/Silicon-Germanium Two-Dimensional
Electron Gases Keith A Slinker1, K.L.M.
Lewis1, C.C. Haselby1, L.J. Klein1,
J.L. Truitt1, Srijit Goswami1, D.E. Savage1,
M.G. Lagally1, D.W. van der Weide1, J.O.
Chu2, P.M. Mooney2, S.N. Coppersmith1
and Mark A. Eriksson1; 1University of
Wisconsin - Madison, Madison, Wisconsin; 2IBM Watson
Research Center, Yorktown Heights, New York.
4:45 PM F2.9
Nanometer-scale control of Ge island nucleation sites on
Si(001) using a Ga focused ion beam Alain Portavoce2,
Mark C. Reuter1, Robert Hull2 and Frances
M. Ross1; 1IBM TJ Watson Research Center,
Yorktown Heights, New York; 2Department of Materials
Science and Engineering, University of Virginia, Charlottesville,
Virginia.
SESSION F3: Poster Session
Chairs: Christophe Delerue and Masakazu Ichikawa
Monday Evening, November 29, 2004
8:00 PM
Exhibition Hall D (Hynes)
F3.1
Charge Transport in Silicon Nanocrystal Arrays. Rishikesh
Krishnan1, Philippe Fauchet1, Todd
Krauss3, Qianghau Xie2, Xiang-Dong Wang2
and Joseph Kulik2; 1Electrical and Computer
Engineering, University of Rochester, Rochester, New York;
2Department of Chemistry, University of Rochester,
Rochester, New York; 3Physical Analysis Lab Arizona,
Freescale Semiconductor, Tempe, Arizona.
F3.2
Addition Energies of Semiconductor Quantum Dots from First
Principles. Alberto Franceschetti, Oak Ridge National
Laboratory, Oak Ridge, Tennessee.
F3.3
Computer Simulation of Charging/Erasing Transients of a
Ge/Si Hetero-Nanocrystal-Based Flash Memory. Dengtao
Zhao, Yan Zhu, Ruigang Li and Jianlin Liu; Electrical
Engineering, Quantun Structures Laboratory, Riverside, California.
F3.4
Threshold Voltage Shift in Hetero-nanocystal Floating Gate
Flash Memory. Yan Zhu, Dengtao Zhao, Ruigang Li
and Jianlin Liu; EE department, University of California,
Riverside, Riverside, California.
F3.5
Source-Drain Engineering Challenges in Finfet Device Fabrication.
Daniel Pham, International Sematech, Austin, Texas.
F3.6
Structural characterization and Coulomb blockade of a-SiNx/
nanocrystalline Si /a-SiNx asymmetric double-barrier structures
Xinfan Huang, Liangcai Wu, Min Dai and Kunji Chen;
Nanjing University, Nanjing, China.
F3.7
Possible Operation of Periodically Layered Nanocrystalline
Porous Silicon as An Acoustic Band Crystal Device Akira
Kiuchi, Bernard Gelloz and Nobuyoshi Koshida; Tokyo Univ.
A&T, Tokyo, Japan.
F3.8
Thermal conductivity of porous silicon evaluated from phase
characteristics of photoacoustic spectroscopy Masato
Ohmukai, Hirokazu Shimizu and Yasuo Tsutsumi; Electrical
and Computer Eng., Akashi College of Technology, Akashi, Hyogo,
Japan.
F3.9
Extreme Aspect Ratio Semiconductor Structures. A.
Amezcua1, P. Sazio1, H. Fang2,
D.-J. Won2, T. Scheidematel2, B. Jackson2,
N. Baril2, J. Badding2 and V. Gopalan2;
1Optoelectronics Research Center, University of
Southampton, Southampton, United Kingdom; 2Materials
Research Institute, Pennsylvania State University, University
Park, Pennsylvania.
F3.10
On-chip Silicon based Waveguide with 1D Photonic Crystal
Cladding Yasha Yi, Peter Bermel, Shoji Akiyama,
Xiaoman Duan and Lionel C. Kimerling; DMSE, M.I.T, Cambridge,
Massachusetts.
F3.11
High-Speed All-Optical Modulation in Silicon using Two-Photon
Absorption and High-Finesse Cavities. Christina Manolatou
and Michal Lipson; ECE, Cornell University, Ithaca, New York.
F3.12
Field Enhancement Mechanisms and Electron Field Emission
Properties of WC-SiC Nanocomposite Thin Layers. W.M. Tsang1,
S.P. Wong1,2 and J.K.N. Lindner3;
1Dept of Electronic Engineering, Chinese University
of Hong Kong, Shatin, Hong Kong; 2Materials Science
& Technology Research Center, Chinese University of Hong
Kong, Shatin, Hong Kong; 3Institut fur Physik,
University of Augsburg, Augsburg, Germany.
F3.13
Structure and Field Emission Properties of SiC Nanotip
Arrays by Using ECR-CVD as Self-Masked Dry Etching technique
Hung-Chun Lo1,4, Chia-Fu Chen1,
Chih-Hsun Hsu2, Jih-Shang Hwang3, Li-Chyong
Chen2 and Kuei-Hsien Chen4; 1Department
of Materials Science and Engineering, Naitonal Chiao Tung
University, Hsinchu, Taiwan; 2Center for Condensed
Matter Sciences, National Taiwan University, Taipei, Taiwan;
3Institute of Optoelectronic Sciences, National
Taiwan Ocean University, Keelung, Taiwan; 4Institute
of Atomic and Molecular Science, Academia Sinica, Taipei,
Taiwan.
F3.14
A Low Temperature Inverse Micelle Solvothermal Approach
for Shape- Controlled Synthesis of Germanium Nanocrystals.
Wenzhong Wang, Jianyu Huang, Dezhi Wang, Shankar Kunwar
and Zhifeng Ren; Physics, Boston College, Chestnut Hill, Massachusetts.
F3.15
Ge and Si Nanostructures Deposited by PLD. Daria
Riabinina, Federico Rosei and Mohamed Chaker; INRS-EMT,
University of Quebec, Varennes, Quebec, Canada.
F3.16
Si1-xGex Nanocrystals Observed by EFTEM: Influence of the
Dry and Wet Oxidation Process. Angel Cuadras1,
Jordi Arbiol2, Joan Ramon Morante3,
Tomas Rodriguez4 and Andres Rodriguez4;
1Electronic Engineering, Universitat Politecnica
de Catalunya, Castelldefels, Barcelona, Spain; 2Scientific
and Technical Facilities, Universitat de Barcelona, Barcelona,
Barcelona, Spain; 3Electronics, Universitat de
Barcelona, Barcelona, Barcelona, Spain; 4Electronic
Technology, Universidad Politecnica de Madrid, Madrid, Madrid,
Spain.
F3.17
Rapid Growth of Ge Quantum Dots Prepared by High-Vacuum
Ion-Beam Sputtering. Hsin-Hsien Wu, Material, Cheng
Kung University, Tainan, Taiwan.
F3.18
Abstract
Withdrawn
F3.19
Abstract Withdrawn
F3.20
Abstract Withdrawn
F3.21
Epitaxial Sn-Si Islands Formed at the SiO2/Si
Interface by Sn Implantation and Annealing. Joao M.J.
Lopes1, Paulo F.P. Fichtner2,1, Fernando
Claudio Zawislak1, Ricardo M. Papaleo3,1,
Francisco Lovey4, A. Condo4 and A. Tolley4;
1Departamento de Fisica, Universidade Federal do
Rio Grande do Sul, Porto Alegre, RS, Brazil; 2Escola
de Engenharia, Universidade Federal do Rio Grande do Sul,
Porto Alegre, RS, Brazil; 3Faculdade de Fisica,
PUC-RS, Porto Alegre, RS, Brazil; 4Departamento
de Materiales, Centro Atomico Bariloche, Bariloche, Argentina.
F3.22
Gated SiGe Single and Double Quantum Dots for Quantum Computation.
Levente Klein1, S. Goswami1,
K. A. Slinker1, K.L.M. Lewis1, Robert
Blick1, J.O. Chu2, P.M. Mooney2,
S.N. Coppersmith1 and M.A. Eriksson1;
1Department of Physics, University of Wisconsin
Madison, Madison, Wisconsin; 2IBM T.J. Watson Research
Center, Yorktown Heights, New York.
SESSION F4: Si/SiGe THz Devices
Chair: Jean-Marc Baribeau
Tuesday Morning, November 30, 2004
Constitution B (Sheraton)
8:30 AM *F4.1
Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications
Douglas J Paul, Department of Physics, University of
Cambridge, Cambridge, Cambridgeshire, United Kingdom.
9:00 AM *F4.2
Recent Results on the Road to a Si/SiGe Quantum Cascade Laser
Ulf Gennser1, Alex Borak2, Maxi
Scheinert2, Laurent Diehl2, Soichiro Tsujino2,
Claudiu Falub2, Hans Sigg2, Elisabeth
Mueller2, Detlev Gruetzmacher2, Yves Campidelli3,
Olivier Kermarrec3, Isabelle Sagnes1,
Daniel Bensahel3 and Jerome Faist4; 1LPN-CNRS,
Marcoussis, France; 2Paul Scherrer Institute, CH-5232
Villigen PSI, Switzerland; 3ST Microelectronics,
F-38926 Crolles-Cedex, France; 4Universite de Neuchatel,
CH-2000 Neuchatel, Switzerland.
9:30 AM *F4.3
The emission of Terahertz radiation from doped silicon devices.
James Kolodzey, Pengcheng Lv, R. Thomas Troeger, Sangcheol
Kim and S. K. Ray; Elec. & Comp. Eng., University of Delaware,
Newark, Delaware.
10:00 AM BREAK
SESSION F5: Si/SiG3 Threee-Dimensional Nanostructures
Chair: J. Kolodzey
Tuesday Morning, November 30, 2004
Constitution B (Sheraton)
10:15 AM *F5.1
Progress in the Growth and Characterization of Ge Quantum
Dots and Islands Jean-Marc Baribeau, Institute for
Microstructural Sciences, National Research Council Canada,
Ottawa, Ontario, Canada.
10:45 AM F5.2
1D Alignment of Nanoscale Ge Islands on Grooved Si(001) Surfaces.
Takeshi Kitajima1, Bing Liu2 and
Stephen R. Leone2; 1Electrical and Electronic
Engineering, National Defense Academy of Japan, Yokosuka, Kanagawa,
Japan; 2Departments of Chemistry and Physics, and
Lawrence Berkeley National Laboratory, University of California
Berkeley, Berkeley, California.
11:00 AM F5.3
Formation of Ultrahigh Density β-FeSi2
Nanodots by Codeposition of Fe and Si on Oxidized Si(111) Surfaces.
Yoshiaki Nakamura1,2, Yasushi Nagadomi1
and Masakazu Ichikawa1,2; 1Dept. of Applied
Physics, The Univ. of Tokyo, Tokyo, Japan; 2CREST,
Japan Science and Technology Agency, Tokyo, Japan.
11:15 AM F5.4
Growth and Overgrowth of Ge/Si Quantum Dots: An Observation
by Atomic Resolved HAADF-STEM Imaging. D. Zhi1,
P. A. Midgley1, R. E. Dunin-Borkowski1,
B. A. Joyce2, D. W. Pashley3, A. L. Bleloch4
and P. J. Goodhew5; 1Materials Science
and Metallurgy, University of Cambridge, Cambridge, United Kingdom;
2Physics, Imperial College, London, United Kingdom;
3Materials, Imperial College, London, United Kingdom;
4UK SuperSTEM Laboratory, Daresbury, United Kingdom;
5Engineering, University of Liverpool, Liverpool,
United Kingdom.
11:30 AM *F5.5
Heteroepitaxial Growth on Vicinal and Nanostructured Si(001):
From Kinetic Growth Instabilities to Perfectly Ordered Dot Arrays.
F. Schaffler, Institut fur Halbleiterphysik, Johannes
Kepler Universitat Linz, Linz, Austria.
SESSION F6: Si Nanocrystals and Porous Si: Light-Emitting
and Other Properties I
Chairs: L. Pavesi and A. Williamson
Tuesday Afternoon, November 30, 2004
Constitution B (Sheraton)
1:30 PM *F6.1
Visible Multi-Color Luminescence from Nanocrystalline Silicon.
Tomio Izumi1 and Keisuke Sato2;
1Reserch Institute of Science & Technology, Tokai
University, Hiratsuk, Kanagawa, Japan; 2Dept. of
Electronic and Computer Engineering, Tokyo Denki University,
Hatoyama, Hikigun, Saitama, Japan.
2:00 PM *F6.2
Origin of the multiexponential decay dynamics in light-emitting
silicon nanocrystals Cecile Reynaud1,
Olivier Guillois1, Nathalie Herlin1, Gilles
Ledoux2,3 and Friedrich Huisken2; 1LFP,
CEA-CNRS URA 2453, Gif sur Yvette Cedex, France; 2Institute
for Solid State Physics, University of Jena, Jena, Germany;
3LPCML, CNRS, Villeurbanne, France.
2:30 PM *F6.3
Optical Properties of Si Nanocrystals Alexander L.
Efros, Center for Computational Material Science, NRL, Washington
DC, District of Columbia.
3:00 PM BREAK
3:15 PM *F6.4
First Principles Simulations of Group IV Semiconductor Nanomaterials
Andrew J. Williamson, Physics, Lawrence Livermore National
Laboratory, Livermore, California.
3:45 PM F6.5
Foerster Effect between Semiconductor Nanoparticles.
Christophe Delerue and Guy Allan; ISEN, IEMN, LILLE,
France.
4:00 PM *F6.6
Optical Gain in Silicon Nanocrystals. Lorenzo Pavesi,
Physics, University of Trento, povo (trento), Italy.
4:30 PM *F6.7
Silicon Nanocrystals: Photosynthesizers for Molecular Oxygen.
Dmitri Kovalev, Physics Department, Technical University
of Munich, Garching, Germany.
SESSION F7: Poster Session
Chairs: Minoru Fujii and Dmitri Kovalev
Tuesday Evening, November 30, 2004
8:00 PM
Exhibition Hall D (Hynes)
F7.1
Improved Optoelectronic Characteristics of Nanocrystalline
Porous Silicon by High-Pressure Water Vapor Annealing. Bernard
Gelloz1, Akira Kojima2, Hajime Sano1,
Masao Niibe1, Tetsuya Uchida1 and Nobuyoshi
Koshida1,2; 1Elec.&Elec. Eng., Tokyo
Univ. A&T, Tokyo, Japan; 2Quantum14 co., Tokyo,
Japan.
F7.2
Composition of Ge/Si Islands in the Growth of Ge on Si(111).
Fulvio Ratto and Federico Rosei; EMT, INRS, Varennes,
Quebec, Canada.
F7.3
Uniform dome-shaped self-assembled Ge islands by UHV/CVD
after boron pre-deposition Ning Deng, Wentao Huang
and Peiyi Chen; Institute of Microelectronics, Beijing, China.
F7.4
Classical Versus First-Principles Structural Relaxation:
Calculated Electronic Excitations and Optical Properties of
Ge Nanocrystals Embedded in a SiC Matrix. Giancarlo Cappellini1,3,
Hans-Christian Weissker2, Davide De Salvador4,
Jurgen Futhmueller2, Friedhelm Bechstedt2,
Guido Satta1,3 and Luciano Colombo1,3;
1Physics Department, University of Cagliari, Cagliari,
Italy; 2IFTO, FSU, Jena, Germany; 3SLACS,
INFM, Cagliari, Italy; 4Physics Department, University
of Padova, Padova, Italy.
F7.5
Self-Assembled Ge/Si Quantum Dot Superlattices: Analysis
using Raman Spectroscopy and Capacitance Measurements. Ariano
R. Rodrigues1, Giovani Zanelatto1, Adenilson
Jose Chiquito1, Alexander I. Milekhin2
and Jose Claudio Galzerani1; 1Physics,
Universidade Federal de Sao Carlos, Sao Carlos (SP), SP, Brazil;
2Institute of Semiconductor Physics, Novosibirsk,
Russian Federation.
F7.6
Measurement of the Concentration-Dependent Si-Ge Interdiffusivity
During Oxidation Enhanced Interdiffusion in Si-Ge Heterostructures.
Nevran Ozguven, Daniel B. Aubertine and Paul C. McIntyre;
Materials Science and Engineering, Stanford University, Stanford,
California.
F7.7
Evolution of the Luminescence Spectrum During the Dry and
Steam Oxidation of SiGe Films. Andres Rodriguez1,
Jesus Sangrador1, Tomas Rodriguez1, Angel
Carmelo Prieto2, Manuel Avella2 and Juan
Jimenez2; 1Tecnologia Electronica,
E.T.S.I. de Telecomunicacion, Universidad Politecnica de Madrid,
Madrid, Madrid, Spain; 2Fisica de la Materia Condensada,
E.T.S.I. Industriales, Universidad de Valladolid, Valladolid,
Valladolid, Spain.
F7.8
Dislocation and Strain Distribution Analysis for SiGe Buffer
Layers Formed on Silicon on Insulator Substrates. Noriyuki
Taoka1, Akira Sakai1, Shogo Mochizuki1,
Osamu Nakatsuka2, Shigeaki Zaima1, Yukio
Yasuda1, Masaki Ogawa2, Tsutomu Tezuka3,
Naoharu Sugiyama3 and Shin-ichi Takagi3;
1Graduate School of Engineering, Nagoya University,
Nagoya, Japan; 2EcoTopia Science Institute, Nagoya
University, Nagoya, Japan; 3MIRAI Project, Association
of Super-Advanced Electronics Technology, Kawasaki, Japan.
F7.9
Nanostructures in cleavage process simulation of silicon
on the basis of large-scale electronic structure calculations;
surface reconstruction, anisotropic strain and step formation.
Takeo Hoshi, Yusuke Iguchi and Takeo Fujiwara; Department
of Applied Physics, University of Tokyo, Hongo, Bunkyou-Ku,
Tokyo, Japan.
F7.10
Growth and Properties of Core/Shell Silicon Nanowires.
Florian M. Kolb, Herbert Hofmeister, Eckard Pippel, Margit
Zacharias and Ulrich Goesele; MPI of Microstructure Physics,
Halle (Saale), Germany.
F7.11
Metal-Free Growth of Si Nanowires by Annealing SiOx (x<2)
Films Deposited by PECVD. Xiaoxin Wang, Jianguo Zhang
and Qiming Wang; Institute of Semiconductors, Chinese Academy
of Sciences, Beijing, China.
F7.12
Synthesis and Photoluminescence of Silicon-Germanium Alloy
Nanowires. Xiaowei Wang1, Jiming Bao2,
Jianyu Huang1, Dezhi Wang1, Capasso Federico2
and Zhifen Ren1; 1physics, boston college,
Chestnut Hill, Massachusetts; 2Division of engineering
and applied sciences, Harvard university, Cambridge, Massachusetts.
F7.13
VLS Epitaxy of Si and Ge Nanowires: Kinetics, Morphologies,
and Properties S. T. Picraux, T. Clement, J. L. Taraci,
J. W. Dailey, David J. Smith and Jeff Drucker; Arizona State
University, Tempe, Arizona.
F7.14
Fabrication of Uniform Arrays of Nanopillars, Nanospikes
and Nanorings Using Modified Nanosphere Lithograpy. Jefferson
Earl Rose, Chemistry, UCLA, Los Angeles, California; Chemistry,
UCLA, Los Angeles, California.
F7.15
Fabrication of a Regular Array of Atomic Silicon Wires on
Silicon. Takeharu Sekiguchi, Shunji Yoshida and Kohei
M. Itoh; Department of Applied Physics and CREST-JST, Keio University,
Yokohama, Japan.
F7.16
Characterization of SiC Nanowire Grown by APCVD Using Single
Precursors. Rho Dae Ho1,2, Kim Jae-Soo2,
Byun Dong-Jin1, Yang Jae-Woong3, Lee Jae-Hoon4
and Kim Na-Ri1; 1Materials Science and
Engineering, Korea University, Seoul, South Korea; 2Metal
Processing Center, Korea Institue of Science and Technology,
Seoul, South Korea; 3Advanced Materials Engineering,
Daejin University, Pochun, South Korea; 4Light Materials
Team, Korea Institute of Industrial Technology, Chonan, Chungnam,
South Korea.
F7.17
Growth and Chracterization of SiOx Nanowires by VLS and SLS
Growth Mechanism. Rho Dae Ho1,2, Kim Jae-Soo2,
Byun Dong-Jin1, Yang Jae-Woong3, Lee Jae-Hoon4
and Kim Na-Ri1; 1Materials Science and
Engineering, Korea University, Seoul, South Korea; 2Metal
Processing Center, Korea Institute of Science and Technology,
Seoul, South Korea; 3Advanced Materials Engineering,
Daejin University, Pochon, South Korea; 4Light Materials
Team, Korea Institute of Industrial Technology, Chonan, Chungnam,
South Korea.
F7.18
Germanium Nanowires Growth via Vapor Transport. Yi
Ma, Xiaowei Wang, Jianyu Huang, Dezhi Wang and Zhifen Ren;
Physics, Boston College, Brighton, Massachusetts.
F7.19
Synthesis and Characterization of ZnS/Si Wire Heterostructures
Chunsheng Du and Ning Pan; University of California at
Davis, Davis, California.
F7.20
Optical Properties of Ge Nanowires Grown on Silicon (111)
and (100) Substrates. Boris Kamenev1, Varun
Sharma1, Ted Kamins2, R. Stanley Williams2
and Leonid Tsybeskov1; 1Electrical and
Computer Engineering, New Jersey Institute of Technology, Newark,
New Jersey; 2Quantum Science Research, Hewlett-Packard
Laboratories, Palo Alto, California.
F7.21
Carrier Transport in One-dimensional Ge Nanowire - Si Substrate
Heterojunctions. Boris Kamenev1, Eunkyu K.
Lee1, Pavel A. Forsh3, Ted Kamins2,
R. Stanley Williams2 and Leonid Tsybeskov1;
1Electrical and Computer Engineering, New Jersey
Institute of Technology, Newark, New Jersey; 2Quantum
Science Research, Hewlett-Packard Laboratories, Palo Alto, California;
3Physics Department, Moscow State University, Moscow,
Russian Federation.
F7.22
Generation of Silicon Nanowhiskers by Molecular Beam Epitaxy.
Luise Schubert1,2, Nikolai D. Zakharov1,
Gerhard Gerth1, Hartmut S. Leipner2, Peter
Werner1 and Ulrich Goesele1; 1Max
Planck Institute of Microstructure Physics, Halle, Germany;
2Department of Physics, Martin-Luther University,
Halle, Germany.
F7.23
Auger Electron Spectroscopy of Contacts to Si Nanowires.
Bangzhi Liu1, Soham Dey1, Theresa
S. Mayer2, Joan M. Redwing1 and Suzanne
E. Mohney1; 1Department of Materials Science
and Engineering, The Pennsylvania State University, University
Park, Pennsylvania; 2Department of Electrical Engineering,
The Pennsylvania State University, University Park, Pennsylvania.
F7.24
Formation of Hydrogen-Passivated Silicon Nanochains by Pulsed
Laser Ablation without Thermal Annealing. Mitsuru Inada1,
Ikurou Umezu2, Shukichi Tanaka1, Shinro
Mashiko1 and Akira Sugimura2; 1National
Institute of information and communications technology, Kobe,
Japan; 2Department of Physics, Konan University,
Kobe 658-8501, Japan.
F7.25
Growth Rate of Silicon Nanowires. Jun Kikkawa,
Yutaka Ohno and Seiji Takeda; Department of Physics, Osaka University,
Toyonaka, Osaka, Japan.
F7.26
Modification of nc-Si/SiO2 Nanostructures by Selective
Laser Induced Heating. Boris Kamenev1,
Haim Grebel1, Viktor Timoshenko2 and Leonid
Tsybeskov1; 1Electrical and Computer Engineering,
New Jersey Institute of Technology, Newark, New Jersey; 2Physics
Department, Moscow State University, Moscow, Russian Federation.
F7.27
Si nanocrystals in PECVD silicon oxides and comparison of
its luminescence efficiency with implanted and annealed samples
Mariano Peralvarez1, M. Lopez1, J. R.
Morante1, Blas Garrido1, J. Barreto2,
V. J. Cadarso2, M. Riera2, K. Zinoviev2
and C. Dominguez2; 1Electronics Department,
Universitat de Barcelona, Barcelona, Spain; 2Institut
de Microelectronica de Barcelona, CNM-CSIC, Bellaterra, Spain.
SESSION F8: Si Nanocrystals and Porous Si: Light-Emitting
and Other Properties II
Chairs: Albert Polman and Anthony Van Buuren
Wednesday Morning, December 1, 2004
Constitution B (Sheraton)
NOTE EARLY START
8:15 AM *F8.1
Electric Force Microscopy of Individually Charged Silicon Nanoparticles. Thierry Melin1, Heinrich Diesinger1, Dominique Deresmes1, Thierry Baron2, Sophie Barbet1 and Didier Stievenard1; 1IEMN-CNRS UMR 8520, Dpt ISEN, Villeneuve d Ascq, France; 2LTM - CNRS UMR 5129, CEA, Leti DTS, Grenoble, France.
8:45 AM *F8.2
Silicon Nanocrystals: From Coulomb Blockade To Memory Arrays. Rajesh A Rao, Ramachandran Muralidhar, Robert F Steimle, Sherry Straub, Bruce Hradsky, Jane Yater, Steve Anderson, Erwin Prinz, Craig Swift, Tushar Merchant, Matt Stoker, Michael Sadd and Bruce E White; APRDL, Technology Solutions Organization, Freescale Semiconductor, Inc., Austin, Texas.
9:15 AM *F8.3
Enhanced Silicon Nanocrystal Photoluminescence via Au-Si Near-Field Energy Transfer Processes. Julie Suzanne Biteen, Issac Garcia-Munoz, Nathan S. Lewis and Harry A. Atwater; California Institute of Technology, Pasadena, California.
9:45 AM *F8.4
Coupling Si Quantum Dots to Surface Plasmons. Jeroen Kalkman and Albert Polman; FOM-Institute AMOLF, Amsterdam, Netherlands.
10:15 AM BREAK
10:30 AM *F8.5
Influence of the Strain, Surface Sstructure and Particle-Particle Interaction on the Occupied and Empty Density of States in Group-IV Nanostructures. Anthony van Buuren, Christoph Bostedt, Trevor Willey, Rob Meulenberg and Lou Terminello; Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, California.
11:00 AM F8.6
Solid Fullerenes for Tetravalent Semiconductors: The Most Atomlike Quantum Dots Yufeng Zhao, Yong-Hyun Kim, Mao-Hua Du and Shengbai Zhang; National Renewable Energy Laboratory, Golden, Colorado.
11:15 AM F8.7
Electron Exchange Interaction in Electronically Confined Si Quantum Dots. Seungwon Lee1, Paul von Allmen1, Susan Coppersmith2 and Mark Friesen2; 1Jet Propulsion Laboratory, California Inistitute of Technology, Pasadena, California; 2Department of Physics, University of Wisconsin, Madison, Wisconsin.
11:30 AM F8.8
Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Surface Emitting Devices Yoshishige Tsuchiya1, Takuya Nakatsukasa1, Hiroshi Mizuta2, Shunri Oda1,2, Akira Kojima3 and Nobuyoshi Koshida3; 1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan; 2Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan; 3Department of Electrical and Electronic Engeneering, Tokyo University of Agriculture and Technology, Koganei, Japan.
11:45 AM F8.9
Enhancing the Sound Pressure of Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon. Kenji Tsubaki1, Takuya Komoda1 and Nobuyoshi Koshida2; 1Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Osaka, Japan; 2Graduate School of Eng., Tokyo Univ. of A&T, Tokyo, Japan.
SESSION F9: Group IV Semiconductor Nanowires
Chairs: S. Takeda and P. Yang
Wednesday Afternoon, December 1, 2004
Constitution B (Sheraton)
1:30 PM *F9.1
Formation of Nanocatalysts for the Growth of Silicon Nanowires. Seiji Takeda, Jun Kikkawa and Hideo Kohno; Department of Physics, Osaka University, Toyonaka, Osaka, Japan.
2:00 PM F9.2
Synthesis, Properties, and Applications of Modulation-Doped Silicon Nanowires. Chen Yang1, Zhaohui Zhong1 and Charles M. Lieber1,2; 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts; 2Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts.
2:15 PM F9.3
Size Control and Phonon Confinement of Silicon Nanowires Synthesized by Laser Ablation. Naoki Fukata1,2, Takashi Oshima1 and Kouichi Murakami1,2; 1Institute of Applied Physics, University of Tsukuba, Tsukuba, Japan; 2Special Research Project on Nanoscience, University of Tsukuba, Tsukuba, Japan.
2:30 PM F9.4
Ge Nanowire Formation on Si(124) Surface. Heedon Hwang, Kenji Ohmori, Benjamin Cho, J.A.N.T. Soares, Jian-Guo Wen, Ivan Petrov and J. E. Greene; Department of Materials Science and Materials Research Laboratory, University of Illinois, Urbana, Illinois.
2:45 PM F9.5
Complex Diameter Modulations in Silicon Carbide Nanowire Growth. Hideo Kohno, Hideto Yoshida and Seiji Takeda; Physics, Osaka University, Toyonaka, Osaka, Japan.
3:00 PM BREAK
3:15 PM *F9.6
Elemental Semiconductor Nanowires and their Thermoelectric Properties. P. Yang and Rong Fan; University of California-Berkeley, Berkeley, California.
3:45 PM F9.7
Quantum Confinement and the Vibrational and Electronic Properties of Group IV and III-V Semiconductor Nanowires. Xinyuan Zhao1, Li Yang1, C. M. Wei1,2 and Mei-Yin Chou1; 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia; 2Institute of Physics, Academia Sinica, Taipei, Taiwan.
4:00 PM F9.8
Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors. Zhaohui Zhong1, Ying Fang1, Wei Lu1 and Charles M Lieber1,2; 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts; 2Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts.
4:15 PM F9.9
Silicon nanowires: doping-dependent n- and p- channel FET behavior and UV photoresponse Kumhyo Byon1, C. K. W. Adu2, P. C. Eklund2 and J. E. Fischer1; 1Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania; 2Department of Physics, Penn State University, University Park, Pennsylvania.
4:30 PM F9.10
Fabrication and Electrical Characterization of Silicon Nanowire Arrays. Sarah M. Dilts, Ahmad Mohammad, Kok-Keong Lew, Suzanne E. Mohney and Joan M. Redwing; Department of Materials Science and Engineering, Materials Research Institute, Penn State University, University Park, Pennsylvania.
4:45 PM F9.11
Nano-Bridging: An Effective Solution to Interconnecting Nano-Scale Devices M. Saif Islam1,2, Shashank Sharnma1, Theodore I Kamins1 and R. Stanley Williams1; 1Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California; 2Electrical and Computer Engineering, University of California, Davis, California.
SESSION F10: Poster Session
Chairs: Siegfried Janz and C. Reynaud
Wednesday Evening, December 1, 2004
8:00 PM
Exhibition Hall D (Hynes)
F10.1
Nanometer scale metal/Si nanowire junctions and aligned silicon
quantum dot arrays for nanoelectronics fabricated with self-assembled
etch masks. Regina Ragan1, Sehun Kim2
and R. Stanley Williams1; 1Quantum Science
Research, Hewlett Packard, Palo Alto, California; 2Department
of Chemistry, Korea Advanced Institute of Science and Technology,
Daejon, South Korea.
F10.2
Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped
SiO2 - Increase in Photoluminescence-. Naoki
Fukata1,2, Changqing Li1, Hiroshi
Uematsu1, Takamichi Arai1, Tetsuya Makimura1
and Kouichi Murakami1,2; 1Instisute of
Applied Physics, University of Tsukuba, Tsukuba, Japan; 2Special
Research Project on Nanoscience, University of Tsukuba, Tsukuba,
Japan.
F10.3
Characterization and Modelling of the Emission at 1540 nm
from Silicate Glasses Co-doped with Si and Er Ions. Yousef
Lebour1, Paolo Pellegrino1, Jose
Moreno1, Cristina Garcia1, Joan Ramon
Morante1, Blas Garrido1 and Michel Prassas2;
1Electronics, University of Barcelona, Barcelona,
Spain; 2Fontainebleau Research Centre, Corning S.A.,
Avon, France.
F10.4
Luminescence of Rare Earth Doped Si/Al/SiO2 Co-sputtered
Films. Luis F. Fonseca, Carlos Rozo, Oscar Resto
and S. Zvi Weisz; Physics, University of Puerto Rico, San Juan,
Puerto Rico.
F10.5
Optical activation of Erbium by Si nanowires using sol-gel
derived Er-doped silica Kiseok Suh1, Jung
H. Shin1, Oun-Ho Park2, Byeong-Soo Bae2,
Heon-Jin Choi3 and Jung-Chul Lee3; 1Physics,
KAIST, Daejeon, South Korea; 2Materials Science and
Engineering, KAIST, Daejeon, South Korea; 3Materials
science and Technology Division, KIST, Seoul, South Korea.
F10.6
Abstract
Withdrawn
F10.7
Abstract
Withdrawn
F10.8
Anisotropically Nanostructured Silicon: A First-Principle
Approach. Yuri Bonder and Chumin Wang; Instituto
de Investigaciones en Materiales, Universidad Nacional Autonoma
de Mexico, Mexico D.F., Mexico.
F10.9
Generation of Singlet Oxygen at Room Temperature Mediated
by Energy Transfer from Si Nanocrystals. Minoru Fujii1,
Shingo Minobe1, Shinji Hayashi1, Egon
Gross2, Joachim Diener2 and Dmitri Kovalev2;
1Department of Electrical & Electronics Engineering,
Kobe University, Kobe, Japan; 2Physik Department,
Technische Universitaet Muenchen, Muenchen, Germany.
F10.10
Control of Photoluminescence Properties of Si Nanocrystals
by Simultaneously Doping n and p Type Impurities Minoru
Fujii, Yasuhiro Yamaguchi, Keiichi Ninomiya and Shinji Hayashi;
Department of Electrical & Electronics Engineering, Kobe
University, Kobe, Japan.
F10.11
Pump-probe experiments on low loss silica waveguides containing
Si nanocrystals Daniel Navarro1, Nicola
Daldosso1, Mirko Melchiorri1, Lorenzo
Pavesi1, Cristina Garcia2, Paolo Pellegrino2,
Blas Garrido2, J.R. Morante2, E. Scheid3
and G. Sarrabayrouse3; 1Physics, University
of Trento, Povo (Trento), Italy; 2Electronica, Universitat
de Barcelona, Barcelona, Spain; 3Laboratory for Analysis
and Architecture of Systems of C.N.R.S., Touluse, France.
F10.12
Multi-color Luminescence from nanocrystalline silicon
Hiroshi Kunii1, Keisuke Sato1,
Kenji Hirakuri1 and Tomio Izumi2; 1Electronic
and Computer Engineering, Tokyo Denki University, Hatoyama,
Saitama, Japan; 2Electronics, Tokai University, Hiratsuka,
Kanagawa, Japan.
F10.13
Improvement of Operating Voltage and Luminescent Properties
in Nanocrystalline Silicon Electroluminescent Device Keisuke
Sato1,2, Kenji Hirakuri1, Mitsuo Iwase3
and Tomio Izumi4; 1Dept. of Electronic
and Computer Engineering, Tokyo Denki University, Saitama, Japan;
2Dept. of Applied Science, Tokai University, Hiratsuka,
Japan; 3Dept. of Materials Science, Tokai University,
Hiratsuka, Japan; 4Dept. of Electronics, Tokai University,
Hiratsuka, Japan.
F10.14
Photoluminescence from Crystalline Silicon Quantum Dots Embedded
in Silicon Nitrides. Tae Wook Kim1, Baek
Hyun Kim1, Chang Hee Cho1, Seong Ju Park1,
Nae Man Park2 and Gun Yung Sung2; 1Material
Science and Engineering, Gwangju Institute of Science and Technology,
Gwangju, South Korea; 2Basic Research Laboratory,
Electronics and Telecommunications Research Institute, Daejeon,
South Korea.
F10.15
Soft x-ray spectroscopy of dopant atoms in semiconductor
nanocrystals Rob Meulenberg, Anthony van Buuren,
Trevor Willey and Louis Terminello; LLNL, Livermore, California.
F10.16
Structural, Electronic and Defect Properties of Chemically
Modified Silicon Nanoparticles Andrea Baumer1,
Martin Stephan Brandt1, Martin Stutzmann1,
Claudia Dahmen2, Joerg Auernheimer2, Horst
Kessler2, H. Wiggers3, P. Roth3,
M. Pridoehl4 and F. M. Petrat4;
1Walter Schottky Institut, TU Muenchen, Garching,
Germany; 2Institut fuer Organische Chemie und Biochemie,
TU Muenchen, Garching, Germany; 3Institut fuer Verbrennung
und Gasdynamik, Universitaet Duisburg-Essen, Duisburg, Germany;
4Creavis Technology and Innovation, Degussa AG, Marl,
Germany.
F10.17
Preparation of the atomically straight step-edge Si (111)
substrates as templates for nanostructure formation Shunji
Yoshida, Takeharu Sekiguchi and Kohei M. Itoh; Dept. of
Applied Physics and CREST-JST, Keio university, Yokohama, Japan.
F10.18
Surface Cusp Formation in Si Homoepitaxy Jean-Marc
Baribeau1, Nelson L. Rowell2, Xiaohua
Wu1, David J. Lockwood1 and Michel Beaulieu1;
1Institute for Microstructural Sciences, National
Research Council Canada, Ottawa, Ontario, Canada; 2Institute
for National Measurements Standards, National Reasearch Council
Canada, Ottawa, Ontario, Canada.
F10.19
Synthesis of Microcrystalline Silicon Films by Low Energy
Electron-Beam-Induced Deposition at Cryogenic Temperature
Tetsuya Sato1, Kiyokazu Nakagawa2,
Yutaka Aoki3 and Shouji Sato3; 1Clean
Energy Research Center, University of Yamanashi, Kofu, Yamanashi,
Japan; 2Center for Crystal Science and Technology,
University of Yamanashi, Kofu, Yamanashi, Japan; 3Miyatsu
Co.,LTD., Uenohara, Yamanashi, Japan.
F10.20
Abstract
Withdrawn
F10.21
Self-Limiting Photo-Assisted Synthesis of Silicon Nanocrystals.
C.Y. Chen1,2, S. Kimura1, S. Sen1,
Shinji Nozaki1,2, H. Ono1,2, K. Uchida1
and H. Morisaki1; 1Department of Electronics
Engineering, University of Electro-communications, Tokyo 182-8585,
Japan; 2The 21st Century COE Program: Coherent Optical
Science, University of Electro-communications, Tokyo 182-8585,
Japan.
SESSION F11: Rare-Earth Doped Group V Semiconductor Nanostructures
Chairs: Tom Gregorkiewicz and Paolo Pellegrino
Thursday Morning, December 2, 2004
Constitution B (Sheraton)
8:30 AM *F11.1
Photoluminescence Properties of Er and/or Shallow Impurity Doped Silicon Nanocrystals. Minoru Fujii, Department of Electrical & Electronics Engineering, Kobe University, Kobe, Japan.
9:00 AM F11.2
Energy Transfer from Si Nanocrystals to Er Ions - Different Mechanisms Depending on Er Concentration. Kenji Imakita, Yasuhiro Yamaguchi, Minoru Fujii and Shinji Hayashi; Kobe University, Kobe, Japan.
9:15 AM F11.3
Pump-probe experiments on Er coupled Si-nanocrystals rib-loaded waveguides Nicola Daldosso1, Daniel Navarro1, Mirko Melchiorri1, Lorenzo Pavesi1, Fabrice Gourbilleau2, Marzia Carrada2, Richard Rizk2, Cristina Garcia3, Paolo Pellegrino3, Blas Garrido3 and Livio Cognolato4; 1Physics, University of Trento, Povo (Trento), Italy; 2LERMAT-ISMRA, Caen, France; 3Electronica, Universitat de Barcelona, Barcelona, Spain; 4Agilent Technologies, Torino, Italy.
9:30 AM *F11.4
Location of Er Atoms with Respect to Si Nanoclusters in Luminescent Er and Si Co-implanted Silicates. Paolo Pellegrino1, Youcef Lebour1, Cristina Garcia1, Jordi Arbiol1, Joan Ramon Morante1, Blas Garrido1 and Michel Prassas2; 1Electronics, University of Barcelona, Barcelona, Spain; 2Fontainebleau Research Centre, Corning S.A., Avon.
10:00 AM BREAK
10:15 AM *F11.5
Self-Organized Formation of Erbium-Silicon-Oxide Superlattice. Hideo Isshiki1,2, Albert Polman2 and Tadamasa Kimura1; 1University of Electro-communications, Tokyo, Japan; 2FOM Institute for Atomic and Molecular Physics, Amsterdam, Netherlands.
10:45 AM *F11.6
Si/Si:Er Multi-Nanolayers for Silicon Photonics N. Q. Vinh1, M. A.J. Klik1, B. A. Andreev2 and Tom Gregorkiewicz1; 1Van der Waals-Zeeman Institute, University of Amsterdam, Amsterdam, Netherlands; 2Institute for Physics of Microsctructures, Russian Academy of Sciences, Nizhny Novgorod, Russian Federation.
11:15 AM F11.7
Three-dimensional Confocal Microscopy of Ultra-High Q Toroidal Microcavities on Silicon Doped with Er and Si Nanocrystals Anna Tchebotareva1, Jeroen Kalkman1, Tobias J. Kippenberg2, Kerry J. Vahala2 and Albert Polman1; 1Optoelectronic Materials Group, FOM-Institute AMOLF, Amsterdam, Netherlands; 2Department of Applied Physics, California Institute of Technology, Pasadena, California.
11:30 AM F11.8
CMOS Compatible Erbium Coupled Si Nanocrystal Thin Films for Microphotonics. Michael A. Stolfi1, Luca Dal Negro1, Jurgen Michel1, Xiaoman Duan1, John Le Blanc2, John Haavisto2 and Lionel C. Kimerling1; 1Materials Science and Engineering, MIT, Cambridge, Massachusetts; 2Charles Stark Draper Laboratory, Cambridge, Massachusetts.
11:45 AM CLOSING REMARKS
Symposium Organizers Leonid Tsybeskov
New Jersey Institute of Technology, ECE Dept., University Heights, Newark, NJ 07102
Tel: 973-596-6594
Fax: 973-596-5680
Email: tsybesko@adm.njit.edu
David. J. Lockwood
National Research Council Canada , Institute for Microstructural Sciences, Ottawa, Ontario, Canada K1A OR6
Tel: 613-993-9614
Fax: 613-993-6486
Email: david.lockwood@nrc.ca
Christophe Delerue
IEMN, Dept. ISEN, 41 Blvd. Vauban, 59046 Lille Cedex, France
Tel: 33-3-2030-4053
Fax: 33-3-2030-4051
Email: christophe.delerue@isen.fr
Masakazu Ichikawa
University of Tokyo , Quant.-Phase Electron. Center, Tokyo, Japan
Tel/Fax: 81-3-5841-7901
Email: ichikawa@ap.t.u-tokyo.ac.jp
|
