Chairs
| Christian Wetzel |
|
Rensselaer Polytechnic Institute |
| Bernard Gil |
|
Université Montpellier II |
| Michael Manfra |
|
Bell Laboratories |
| Masaaki Kuzuhara |
|
NEC Corporation |
Symposium Support
AIXTRON AG
Cree, Inc.
Gatan, Inc.
Lucent Technologies
Riber, Inc.
SVT Associates, Inc.
Proceedings to be published in both book form and online
(see ONLINE PUBLICATIONS at www.mrs.org)
as volume 831
of the Materials Research Society
Symposium Proceedings Series.
* Invited paper
SESSION E1: Lasers and Light-Emitting Diodes I
Chairs: Masaaki Kuzuhara and Christian Wetzel
Monday Morning, November 29, 2004
Back Bay C (Sheraton)
8:30 AM *E1.1
Structural Defects related issues of GaN-based Laser Diodes
Shigetaka Tomiya1, Motonobu Takeya2,
Goto Shu2 and Masao Ikeda2; 1Materials
Analysis Center, Sony EMCS, Atsugi, Kanagawa, Japan; 2Shiroishi
Laser Center, Sony MSNC DSC, Shiroishi, Miyagi, Japan.
9:00 AM E1.2
Latest Developments in Blue-Violet Laser Diodes Grown by
Molecular Beam Epitaxy. Valerie Bousquet, Matthias
Kauer, Katherine Johnson, Stewart Edouard Hooper and Jonathan
Heffernan; Advanced Optoelectronic Devices, Sharp Laboratories
of Europe, Oxford, United Kingdom.
9:15 AM E1.3
265 nm Deep Ultraviolet Emitters. Wenhong Sun, Vinod
Adivarahan, Shuai Wu, Ajay Sattu, Ashay Chitnis, Maxim Shatalov
and M. Asif Khan; Electrical Engineering, Univ. of South Carolina,
Columbia, South Carolina.
9:30 AM E1.4
Growth,
Characterization, and Application of High Power III-Nitride
Ultraviolet Emitters. Zaiyuan Ren1, Seong-ran
Jeon1, Maria Gherasimova1, George Cui1,
Jung Han1, Hongbo Peng2, Y.K. Song2,
Arto Nurmikko2, Ling Zhou3, Michael Krames3
and Werner Goetz3; 1Yale University, New
Haven, Connecticut; 2Brown University, Providence,
Rhode Island; 3Lumileds, San Jose, California.
9:45 AM E1.5
Multiple-Quantum-Well Design for 280nm Light Emitting Diodes
Jianping Zhang1, Xuhong Hu1, Jianyu
Deng1, Alex Lunev1, Thomas Katona1,
Yuiry Bilenko1, Remis Gaska1, Asif Khan2
and Michael Shur3; 1Sensor Electronic
Technology, InC, Columbia, South Carolina; 2Electrical
Engineering, University of South Carolina, Columbia, South Carolina;
3Rensselaer Polytechnic Institute, Troy, New York.
10:00 AM BREAK
10:30 AM *E1.6
Fabrication of LED Based on III-V Nitride and its Applications.
Naoki Shibata, Optoelectronics, Technical Div., Toyoda
Gosei Co., Ltd., Nakashima-gun, Japan.
11:00 AM E1.7
Junction Temperature Measurements in Deep-UV Light-Emitting
Diodes. Yangang Xi1, Jingqun Xi1,
Thomas Gessmann2, Jay M. Shayh2, JongKyu
Kim2, E. Fred Schubert1,2, Arthur
J. Fischer3, Mary H. Crawford3, Katherine
H. A. Bogart3 and Andrew A. Allerman3;
1Physics, R.P.I., Troy, New York; 2Department
of Electrical, Computer, and Systems Engineering, Rensselaer
Polytechnic Institute, Troy, New York; 3Semiconductor
Material and Device Sciences, Sandia National Laboratory, Albuquerque,
New Mexico.
11:15 AM E1.8
Effect of GaN Surface Treatment on Optoelectonic Properties
of GaN Layers and Light Emitting Devices. James Grandusky,
Muhammad Jamil and Fatemeh Shadi Shahedipour-Sandvik; School
of NanoSciences and NanoEngineering, University at Albany-SUNY,
Albany, New York.
11:30 AM E1.9
Moth Eye Light-Emitting Diode Hideki Kasugai1,
Yasuto Miyake1, Akira Honshio1, Takeshi
Kawashima1, Kazuyoshi Iida1, Motoaki Iwaya1,
Satoshi Kamiyama1, Hiroshi Amano1, Isamu
Akasaki1, Hiroyuki Kinoshita2 and Hiromu
Shiomi2; 1Faculty of Science and Technology,
21st-Century COE Program "Nano Factory", Meijo University, Nagoya,
Japan; 2SiXON Ltd., Kyoto, Japan.
11:45 AM E1.10
MOCVD Growth of AlGaN for Short-Wavelength UV LEDs Russell
D. Dupuis, Uttiya Chowdhury, Peng Li, Jae_Boum Limb, Jae-Hyun
Ryou, Theodore Chung and Dongwon Yoo; School of ECE, Georgia
Institute of Technology, Atlanta, Georgia.
SESSION E2: Growth
Chairs: Martin Albrecht and Akihiko Yoshikawa
Monday Afternoon, November 29, 2004
Back Bay C (Sheraton)
1:30 PM *E2.1
Growth of Nonpolar GaN(1100) Films and Heterostructures by
Plasma-Assisted Molecular Beam Epitaxy. Oliver Brandt,
Yue Jun Sun and Klaus H. Ploog; Paul-Drude-Institut fuer Festkoerperelektronik,
Berlin, Berlin, Germany.
2:00 PM E2.2
On the dynamics of InGaN dot formation by RF-MBE growth.
Tomohiro Yamaguchi, Sven Einfeldt, Stephan Figge, Carsten
Kruse, Claudia Roder and Detlef Hommel; Inst. of Solid State
Physics, Univ. of Bremen, Bremen, Germany.
2:15 PM E2.3
How do InGaN Quantum Dots Form During MOVPE Growth? Sven
Einfeldt, Tomohiro Yamaguchi, Claudia Roder, Andreas Tausendfreund,
Stephan Figge and Detlef Hommel; Institute of Solid State Physics,
University of Bremen, Bremen, Germany.
2:30 PM E2.4
Growth and Characterization of Self-organized GaN Quantum
Dots on Miscut (0001) Sapphire Substrates by Molecular Beam
Epitaxy. Tao Xu1, Adrian Williams1,
Theodore D. Moustakas1, Lin Zhou2 and
David J Smith2; 1ECE, Boston University,
Boston, Massachusetts; 2Physics and Astronomy and
Center for Solid State Science, Arizona State University, Tempe,
Arizona.
2:45 PM E2.5
Growth and Properties of Nonpolar a-plane InGaN/GaN Multiple
Quantum Wells Grown on Reduced-Defect Lateral Epitaxially Overgrown
a-plane GaN. Arpan Chakraborty1, Stacia
Keller1, Benjamin A. Haskell2, Feng Wu2,
Patrick Waltereit2, Salka Keller1, James
S. Speck2, Steven P. DenBaars2,1, Shuji
Nakamura2 and Umesh K. Mishra1; 1ECE,
University of California, Santa Barbara, Santa Barbara, California;
2Materials Department, University of California,
Santa Barbara, Santa Barbara, California.
3:00 PM BREAK
3:30 PM *E2.6
Status of Bulk AlN Crystal Growth and Substrate Preparation:
the Native Nitride Alternative. Leo J. Schowalter1,2,
Jon B. Whitlock1, Ken E. Morgan1, Sandra
B. Schujman1, Keith R. Evans1 and Glen
A. Slack1; 1Crystal IS, Inc., Watervliet,
New York; 2Rensselaer Polytechnic Institute, Troy,
New York.
4:00 PM E2.7
Growth and Characterization of Ammomothermal GaN Crystals
Grown on HVPE Templates. Michael J. Callahan1,
Kelly Rakes1, David Bliss1 and Buguo Wang2;
1SNHC, Air Force Research Lab, Hanscom AFB, Massachusetts;
2Solid State Scientific, Nashua, New Hampshire.
4:15 PM E2.8
Ammonothermal Growth of GaN Utilizing Negative Temperature
Dependence of Solubility in Basic Ammonia. Tadao Hashimoto,
Kenji Fujito, Feng Wu, Benjamin A. Haskell, Paul T. Fini, James
S. Speck and Shuji Nakamura; ERATO/JST UCSB group, Santa Barbara,
California.
4:30 PM E2.9
Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride
Films over A-plane SiC Substrates Jiawei Li, Zheng Gong,
Changqing Chen, Adivarahan Vinod, Mikhail Gaevski, Edmundas
Kuokstis, Maxim Shatalov, Ying Gao, Zehong Zhang, Arul Arjunan,
T S Sudarshan, Jinwei Yang and M Asif Khan; Department of Electrical
Engineering, University of South Carolina, Columbia, South Carolina.
4:45 PM E2.10
Hydrogen Interactions with the Nitrogen Vacancy in Wurtzite
GaN. Alan F Wright, Sandia National Laboratories,
Albuquerque, New Mexico.
SESSION E3: Poster Session
Chairs: Bernard Gil and Christian Wetzel
Monday Evening, November 29, 2004
8:00 PM
Exhibition Hall D (Hynes)
E3.1
Sublimation Growth of Aluminum Nitride-Silicon Carbide Alloy
Crystals on SiC (0001) Substrates. Zheng Gu1,
James H. Edgar1, Edward A. Payzant2, Harry
M. Meyer2, Larry R. Walker2, R. Liu3,
A. Sarua4 and Martin Kuball4; 1Department
of Chemical Engineering, Kansas State University, Manhattan,
Kansas; 2High Temperature Materials Laboratory, Oak
Ridge National Laboratory, Oak Ridge, Tennessee; 3Department
of Physics and Astronomy, Arizona State University, Tempe, Arizona;
4H.H. Wills Physics Laboratory, University of Bristol,
Bristol, United Kingdom.
E3.2
Determination of Surface Barrier Height and Surface State
Density in GaN Film Grown on Sapphire Substrate. Seong
Eun Park1, Joseph J. Kopanski1, Youn-Seon
Kang2, Lawrence H. Robins2 and Hyun-Keel
Shin3; 1Semiconductor Electronics Division,
National Institute of Standards and Technology, Gaithersburg,
Maryland; 2Ceramic Division, National Institute of
Standards and Technology, Gaithersburg, Maryland; 3Gwangju
Techno Park, LED/LD Packaging Service Center, 958-3 Daechon-dong,
Buk-gu, Gwangju 500-706, South Korea.
E3.3
Excess Carrier Lifetime Measurements for GaN on Sapphire
Substrates with Various Doping Concentrations and Surface Conditions
by the Microwave Photoconductivity Decay Method. Masashi
Kato, Hideki Watanabe, Masaya Ichimura and Eisuke Arai;
Dept. of Electrical & Computer Eng., Nagoya Inst. of Tech.,
Naogya, Japan.
E3.4
Thermal Stability of Boride-based Ohmic and Schottky Contacts
on GaN. Rohit Khanna1, C.J. Kao2,
Ivan Kravchenko4, F. Ren3, G. C. Chi2
and Stephen Pearton1; 1MSE, University
of Florida, Gainesville, Florida; 2Electrical Engineering,
National Central University, Chung-Li, Taiwan; 3Chemical
Engineering, University of Florida, Gainesville, Florida; 4Physics,
University of Florida, Gainesville, Florida.
E3.5
Fabrication and Characterization of GaN Nanopillar Arrays.
Yadong Wang1, Tripathy Sudhiranjan2,
Soo Jin Chua1,2 and Clifton G.Fonstad1,3;
1Singapore-MIT Alliance, E4-04-10, 4 Engineering
Drive 3, Singapore 117576, Singapore, Singapore; 2Institute
of Materials Research and Engineering, 3 Research Link, Singapore
117602, Singapore, Singapore; 3Dept of Electrical
and Computer Science, Massachusetts Institute of Technology,
Cambridge, Massachusetts, USA 02139, Boston, Massachusetts.
E3.6
The composition dependence of the optical properties of InN-rich
InGaN grown by MBE Robert W. Martin1,
Sergi Hernandez1, Paul R. Edwards1, Ke
Wang1, Isabel Fernandez-Torrente1, Masahito
Kurouchi2, Yasushi Nanishi2 and Kevin
P. O'Donnell2; 1Physics Department, Strathclyde
University, Glasgow, United Kingdom; 2Department
of Photonics, Ritsumeikan University, Shiga 525-8577, Japan.
E3.7
Unusual properties of the red and green luminescence bands
in Ga-rich GaN Michael A. Reshchikov1,2
and Hadis Morkoc2,1; 1Physics, Virginia
Commonwealth University, Richmond, Virginia; 2Electrical
Engineering, Virginia Commonwealth University, Richmond, Virginia.
E3.8
Blue-violet Emission from N+ Implanted ZnO:Ga Films Grown
by Chemical Vapor Deposition. Yahya Ibragimovich Alivov1,
Michael A. Reshchikov1, Seydi Dogan1,
David Look1, Vladimir Zinenko1, Yurii
Agafonov1, Badavi M. Ataev1, Valery Mamedov1
and Hadis Morkoc1; 1Electrical Engineering,
VCU, Richmond, Virginia; 2VCU, Richmond, Virginia;
3Semiconductor Research Center, Wright State University,
Dayton, Ohio; 4Institute of Microelectronics Technology,
Moscow, Russian Federation; 5Institute of Physics,
Daghestan Scientific Centre of RAS, Makhachkala, Russian Federation.
E3.9
Spatially Resolved Electrical Defect Spectroscopy of Structural
Defects in GaN Andre Krtschil, Hartmut Witte, Armin
Dadgar, Juergen Christen and Alois Krost; Institute of Experimental
Physics, Otto-von-Guericke-University of Magdeburg, Magdeburg,
Germany.
E3.10
Multiphoton Spectroscopy Studies of GaN/InGaN Layered Structures
Grown on Sapphire Matthew Gray1, J. B.
Schlager1, N. A. Sanford1, A. Munkholm2
and M. R. Krames2; 1Optoelectronics Division
815, National Institute of Standards and Technology, Boulder,
Colorado; 2Lumileds Lighting, San Jose, California.
E3.11
Reduction of dislocation density in AlGaN with high AlN molar
fraction by using a rugged AlN epilayer Akira Ishiga1,
Yuhuai Liu2, Masaya Haraguchi3, Noriyuki
Kuwano3, Hideto Miyake1, Kazumasa Hiramatsu1,
Tomohiko Shibata4 and Mitsuhiro Tanaka4;
1Electrical and Electronic Engineering, Mie University,
Tsu, Mie, Japan; 2SVBL, Mie University, Tsu, Japan;
3Interdisciplinary Graduate School of Engineering
Sciences, Kyusyu University, Kasuga, Japan; 4NGK
Insulators, Ltd, Nagoya, Japan.
E3.12
Fabrication and Characterization of UV Schottky Detectors
by using a Freestanding GaN Substrate. Yasuhiro Shibata1,
Atsushi Motogaito1, Hideto Miyake1, Kazumasa
Hiramatsu1, Youichiro Ohuchi2, Hiroaki
Okagawa2, Kazuyuki Tadatomo2, Tatsushi
Nomura3, Yutaka Hamamura3 and Kazutoshi
Fukui4; 1Electrical and Engineering, Mie
University, Tsu, Japan; 2Photonics Laboratory, Mitsubishi
Cable Industries,Ltd., Itami, Japan; 3Core Technology
Center, Nikon Corporation, Sagamihara, Japan; 4Research
Center for Far-Infrared Region, Fukui University, Fukui, Japan.
E3.13
Strain-Induced Effects on the Resonant Tunneling of Holes
in Zinc-Blende AlyGa1-yN/AlxGa1-xN/AlyGa1-yN Heterostructures.
Meguenni Chahrazade, Zitouni Karima, Mokdad Nawal and Kadri
Abderrahmane; Department of Physics, LEMOP-University Of
Oran(Algeria), Oran, Algeria.
E3.14
Mesh Patterned Reflectors for High Extraction-Efficiency
GaN-Based Light-Emitting Diodes. Hyunsoo Kim, Jaehee
Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Cheolsoo Sone
and Yongjo Park; Photonics Lab, Samsung Advanced Institute of
Technology, Yongin-Si, South Korea.
E3.15
Investigation of Pit Formation Induced by the Desorption
of InxGa1-xN Layer Grown by Metal-Organic Chemical Vapor Deposition.
Tan Sakong, Hosun Paek, Joongkon Son, Sung-Nam Lee, Wonseok
Lee, Okhyun Nam and Yongjo Park; Photonics Lab, Samsung Advanced
Institute of Technology, Suwon, Gyeonggi-Do, South Korea.
E3.16
Excitation Wavelength Dependent Raman Scattering in Low and
Highly Degenerate InN Films. Vaman M. Naik1,
H. Dai2, D. Haddad3, R. Naik2,
J. S. Thakur3, G. W. Auner3, H. Lu4
and W. J. Schaff4; 1Natural Sciences,
U Michigan-Dearborn, Dearborn, Michigan; 2Department
of Physics and Astronomy, Wayne State University, Detroit, Michigan;
3Department of Electrical and Computer Engineering,
Wayne State University, Detroit, Michigan; 4Department
of Electrical and Computer Engineering, Cornell University,
Ithaca, New York.
E3.17
Effects of AlGaN and SiN Interlayers in the MOCVD Epitaxial
Growth of GaN on Silicon. Matt Charles, M. J. Kappers
and C. J. Humphreys; Materials Science and Metallurgy, Cambridge
University, UK, Cambridge, United Kingdom.
E3.18
Effect of [VGa-ON]2- threading
edge dislocations on electron mobility in epitaxial GaN.
Jeong H. You and H. T. Johnson; Department of Mechanical
& Industrial Engineering, University of Illinois at Urbana-Champaign,
Urbana, Illinois.
E3.19
Electrical Characterization of As- and [As+Si]-Doped GaN
Grown by Metalorganic Chemical Vapor Deposition. Mo Ahoujja1,
Said Elhamri1, Rex Berney1, Yung Kee Yeo2
and Robert Hengehold2; 1Physics, University
of Dayton, Dayton, Ohio; 2ENP, Air Force Institute
of Technology, WPAFB, Ohio.
E3.20
Polarity Control of GaN Thin Films Grown by Metalorganic
Chemical Vapor Deposition on (0001) Sapphire. Seiji Mita,
Ramon Collazo, Raoul Schlesser and Zlatko Sitar; Dept. of Materials
Science and Engineering, North Carolina State University, Raleigh,
North Carolina.
E3.21
High Field Magneto-transport Studies of (Ga,Mn)As Dilute
Magnetic Semiconductors. Kartik C Ghosh1,
T. Kehl1, Md. Arif1, S. Mishra2
and J. Broerman1; 1Physics, Astronomy
and Materials Science, Southwest Missouri State University,
Springfield, Missouri; 2Department of Physics, University
of Memphis, Memphis, Tennessee.
E3.22
Dependence of the E2 and A1(LO) Modes
on InN Fraction in InGaN Epilayers. S. Hernandez1,
R. Cusco2, L. Artus2, K. P. O'Donnell1,
R. W. Martin1, I. M. Watson3, M. Jurouchi4
and Y. Nanishi4; 1Department of Physics,
University of Strathclyde, Glasgow, Scotland, United Kingdom;
2Institut Jaume Almera, Consejo Superior de Investigaciones
Cientificas (C.S.I.C.), Barcelona, Spain; 3Institute
of Photonics, University of Strathclyde, Glasgow, Scotland,
United Kingdom; 4Department of Photonics, School
of Science and Engineering, Ritsumeikan University, Shiga, Japan.
E3.23
Growth of Gallium Nitride via Iodine Vapor Phase Epitaxy.
William J Mecouch, Zach Reitmeier, Ji-Soo Park, Brian
P Wagner, Robert F Davis and Zlatko Sitar; Materials Science
and Engineering, North Carolina State University, Raleigh, North
Carolina.
E3.24
Influence of Junction Temperature on Chromaticity and Color
Rendering Properties of Tri-Chromatic Gaussian White Light Sources
Based on Light-Emitting Diodes. Sameer Chhajed1,
E. F. Schubert1,2, Thomas Gessmann1, Y.
L. Li1 and Yangang Xi2; 1Department
of Electrical, Computer, and Systems Engineering, Rensselaer
Polytechnic Institute, Troy, New York; 2Department
of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic
Institute, Troy, New York.
E3.25
P-type Doping of AlGaN Alloys by Plasma-Assisted MBE.
Wei Li and Theodore D. Moustakas; ECE, Boston University,
Boston, Massachusetts.
E3.26
Abstract
Withdrawn
E3.27
Characterization of the Carrier Confinement for InGaN/GaN
Light Emitting Diode with Multiquantum Barriers. Jen-Cheng
Wang, Ray-Ming Lin, Tzer-En Nee and Nie-Chuan Chen; Electronic
Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan.
E3.28
Structural property of Eu doped GaN and its relation with
luminescence property. Hyungjin Bang1,
Junji Sawahata3, Takahiro Maruyama1,2,
Shigeya Naritsuka1,2 and Katsuhiro Akimoto3;
121st Century COE program, Meijo University, Nagoya,
Aichi, Japan; 2Department of materials science and
engineering, Meijo University, Nagoya, Aichi, Japan; 3Institute
of applied physics, University of Tsukuba, Tsukuba, Ibaraki,
Japan.
E3.29
Abstract
Withdrawn
E3.30
Extended X-Ray Absorption Fine Structure Studies of InGaN
Epilayers. Viatcheslav Katchkanov1,2,
K. P. O'Donnell1, S. Hernandez1, R. W.
Martin1, J.F.W. Mosselmans2, Y. Nanishi3
and M. Kurouchi3; 1Department of Physics,
Strathclyde University, Glasgow, Scotland, United Kingdom; 2Synchrotron
Radiation Department, CCLRC Daresbury Laboratory, Warington,
England, United Kingdom; 3Department of Photonics,
School of Science and Engineering, Ritsumeikan University, Shiga,
Japan.
E3.31
X-ray Excited Optical Luminescence studies of InGaN and rare-earth
doped GaN epilayers Viatcheslav Katchkanov1,2,
K.P. O'Donnell1, S. Hernandez1, J.F.W.
Mosselmans2 and N.R.J. Poolton2; 1Department
of Physics, Strathclyde University, Glasgow, Scotland, United
Kingdom; 2Synchrotron Radiation Department, CCLRC
Daresbury Laboratory, Warrington, England, United Kingdom.
E3.32
Growth and Characterization of InGaN/GaN LEDs on Corrugated
Interface Substrate Using MOCVD. Sunwoon Kim1,
Jeong Tak Oh1, Kyu Han Lee1, Dong Joon
Kim1, Je Won Kim1, Yong Chun Kim1
and Jeong Wook Lee2; 1Semiconductor Device
R&D Group, Samsung Electro-Mechanics, Suwon, Gyunggi-Do,
South Korea; 2Photonics Lab, Samsung Advanced Institute
of Technology, Suwon, Gyunggi-Do, South Korea.
E3.33
Mechanism of Stress Reduction in GaN Epitaxy on Si (111)
by Periodic Silicon Delta-Doping. Keyan Zang1,
Soo Jin Chua1,2, Lian Shan Wang2 and Carl
V. Thompson1,3; 1Singapore-MIT Alliance,
Singapore, Singapore; 2Institute of Materials Research
& Engineering, Singapore, Singapore; 3Department
of Materials Science and Engineering, MIT, Boston, Massachusetts.
E3.34
Complex Ordering in AlGaN Thin Films. Yiyi Wang1,
Anirban Bhattacharyya2, Ahmet S Ozcan1,
Theodore D Moustakas2, Karl F Ludwig1,
Lin Zhou3 and David Smith3; 1Physics
Department, Boston University, Boston, Massachusetts; 2Electrical
and Computer Engineering, Boston University, Boston, Massachusetts;
3Department of Physics and Astronomy, Arizona State
University, Tempe, Arizona.
E3.35
Mechanism of Metalorganic MBE Growth of High Quality AlN
on Si (111). Iulian Gherasoiu, Sergey Nikishin, Gela
Kipshidze, Boris Borisov, Anil Chandolu, Mark Holtz and Henryk
Temkin; Electrical Engineering, Texas Tech University, Lubbock,
Texas.
E3.36
Optical characterization of high quality AlN single crystals
Jayantha Senawiratne1, Martin Strassburg1,
Nikolaus Dietz1, Ute Haboeck2,
Axel Hoffmann2, Vladimir Noveski3, Rafael
Dalmau3, Raoul Schlesser3 and Zlatko Sitar3;
1Physics & Astronomy, Georgia State University,
Atlanta, Georgia; 2Institute of Solid State Physics,
Technical University of Berlin, Berlin, Germany; 3Material
Science and Engineering, North Carolina State University, Raleigh,
North Carolina.
E3.37
Enhancement of Light Extraction Efficiency of GaInN LEDs
by Omni-Directional Diffuse Reflectors. Jong Kyu Kim1,
Hong Luo2, Jay M Shah1, Yangang Xi2,
Thomas Gessmann1 and E Fred Schubert1,2;
1ECSE, Rensselaer Polytechnic Institute, Troy, New
York; 2Department of Physics, Applied Physics, and
Astronomy, Rensselaer Polytechnic Institute, Troy, New York.
E3.38
Discrete Steps in the Capacitance Voltage Characteristics
of GaInN/GaN Light Emitting Diode Structures. Yong Xia1,3,
Eric Williams1,3, Yena Park2,3, Ibrahim
Yilmaz1,3, Jay M Shah2,3, E. F. Schubert2,3,1
and C. Wetzel1,3; 1Department of Physics,
Applied Physics and Astronomy, Rensselaer Polytechnic Institute,
Troy, New York; 2Department of Electrical, Computer,
and Systems Engineering, Rensselaer Polytechnic Institute, Troy,
New York; 3Future Chips Constellation, Rensselaer
Polytechnic Institute, Troy, New York.
E3.39
Optimization of p-type AlGaN/GaN and InGaN/GaN Superlattice
Design for Enhanced Vertical Transport. M.Z. Kauser2,1,
A. Osinsky1, J.W. Dong1, B. Hertog1,
A. Dabiran1 and P.P. Chow1; 1SVT
Associates, Eden prairie, Minnesota; 2ECE, University
of Minnesota, Minneapolis, Minnesota.
E3.40
Influence of Mis-Orientation of C-plane Sapphire Substrate
on the Early Stages of MOCVD Growth of GaN Thin Films. Seongwoo
Kim1, Hideo Aida2 and Toshimasa Suzuki1;
1System Engineering, Nippon Institute of Technology,
Saitama, Japan; 2NAMIKI Precision Jewel Co. Ltd.,
Tokyo, Japan.
E3.41
Thermally stable transparent Ru-Si-O Schottky contacts for
n-type GaN and AlxGa1-xN Eliana Kaminska1,
Anna Piotrowska1, Krystyna Golaszewska1,
Andrian Kuchuk1, Radoslaw Lukasiewicz1,
Emil Kowalczyk1, Adam Barcz1,2, Elzbieta
Dynowska2, Rafal Jakiela2, Anna Stonert3,
Artur Szczesny1, Andrzej Turos3 and Michal
Wiatroszak1; 1Institute of Electron Technology,
Warsaw, Poland; 2Institute of Physics PAS, Warsaw,
Poland; 3Soltan Institute for Nuclear Studies, Warsaw,
Poland.
E3.42
Abstract
Withdrawn
E3.43
Probing the 2-dimensional electron gas in AlInGaN/ GaN heterostructure
by photoluminescence spectroscopy Chew Beng Soh1,2,
Soo Jin Chua1,2, Wei Liu2, Sudhiranjan
Tripathy2 and Dongzhi Chi2; 1Electrical
and Computer Engineering, National University of Singapore,
Singapore, Singapore; 2IMRE, Singapore, Singapore.
SESSION E4: Indium Nitride
Chairs: Olivier Briot and William Schaff
Tuesday Morning, November 30, 2004
Back Bay C (Sheraton)
8:30 AM *E4.1
Towards Fabrication of Device Quality InN-based III-Nitrides
Nano-Heterostructures: Growth and Properties of Thick InN Films,
InN-based SQW/MQW Structures, and Quantum Dots by RF-MBE.
Akihiko Yoshikawa, Yoshihiro Ishitani, Song-Bek Che,
Ke Xu, Xinqiang Wang, Masayoshi Yoshitani, Wataru Terashima
and Naoki Hashimoto; Department of Electronics and Mechanical
Engineering, and InN-project as a CREST program of JST, Chiba
University, Chiba, Japan.
9:00 AM E4.2
Effects of the Nitridation Process of (0001) Sapphire on
Crystalline Quality of InN Grown by RF-MBE. Daisuke Muto1,
Ryotaro Yoneda1, Hiroyuki Naoi2, Tsutomu
Araki1 and Yasushi Nanishi1; 1Department
of Photonics, Ritsumeikan University, Kusatsu, Shiga, Japan;
2Center for Promotion of the COE Program, Ritsumeikan
University, Kusatsu, Shiga, Japan.
9:15 AM E4.3
Growth of InN Films by Cluster Beam Epitaxy and RF Plasma-assisted
MBE. Tai-Chou P. Chen, Christos Thomidis, Joshua
Abell, Anirban Bhattacharyya and Theodore D. Moustakas; Electrical
and Computer Engineering, Boston University, Boston, Massachusetts.
9:30 AM E4.4
Study on RF-MBE growth and control of InN dots on N-polar
GaN grown on vicinal c-plane sapphire. Naoki Hashimoto1,2,
Naohiro Kikukawa1, Song-Bek Che1,2, Yoshihiro
Ishitani1,2 and Akihiko Yoshikawa1,2;
1Department of Electronics and Mechanical Engineering,
Chiba University, Chiba, Japan; 2InN-project as a
CREST program of JST, Chiba University, chiba, Japan.
9:45 AM E4.5
Precise Surface Control in RF-MBE of InN Epitaxy by In-situ
Spectroscopic Ellipsometry Masayoshi Yoshitani1,3,
Song-Bek Che1,2,3, Yoshihiro Ishitani1,2,3
and Akihiko Yoshikawa1,2,3; 1Dept. of
Electronics and Mechanial Engineering, Chiba Univ., Chiba, Japan;
2VBL, Chiba Univ., Chiba, Japan; 3InN-Project
as a CREST program of JST, Chiba Univ., Chiba, Japan.
10:00 AM BREAK
10:30 AM *E4.6
Structural and optical properties of InN films and dots analysed
by transmission electron microscopy Thilo Remmele and Martin
Albrecht; Characterisation, Institute for Crystal Growth,
Berlin, Germany.
11:00 AM E4.7
Influence of the MOVPE Growth Conditions on the Lateral Growth
of InN onto Sapphire Substrates. Sandra Ruffenach, Olivier
Briot, Benedicte Maleyre and Bernard Gil; GES, CNRS, MONTPELLIER,
France.
11:15 AM E4.8
Mechanism of Raman Scattering in Doped InN. Claire Pinquier1,
Francois Demangeot1, Jean Frandon1,
Olivier Briot2, Benedicte Maleyre2, Sandra
Clur-Ruffenach2 and Bernard Gil2; 1Laboratoire
de Physique des Solides, Universite Paul Sabatier, Toulouse,
France; 2Groupe d'Etudes des Semiconducteurs, Universite
Montpellier II, Montpellier, France.
11:30 AM E4.9
Phonon Lifetimes and Decay Mechanisms in InN. James
W. Pomeroy1, Martin Kuball1, Hai Lu2
and William J. Schaff2; 1H.H. Wills Physics
Laboratory, University of Bristol, Bristol, United Kingdom;
2Department of Electrical Engineering, Cornell University,
Ithaca, New York.
11:45 AM E4.10
Unusual Phase Transition in Alloys of GaN, InN and ScN
V. Ranjan1, S. Bin-Omran1, L. Bellaiche1
and Ahmad Alsaad2; 1Physics Department,
University of Arkansas, Fayetteville, Arkansas; 2Department
of Physical Sciences, Jordan University of Science and Technology,
P.O. Box 3030, Irbid, Jordan.
SESSION E5: Optical Properties
Chairs: Tomasz Dietl and Bernard Gil
Tuesday Afternoon, November 30, 2004
Back Bay C (Sheraton)
1:30 PM *E5.1
Recombination Dynamics in Low-Dimensional Nitride Systems.
Yoichi Kawakami1, Akio Kaneta1,
Kunimichi Omae2, Masayoshi Abiko1, Ruggero
Micheletto1, Giichi Marutsuki3, Yukio
Narukawa3 and Takashi Mukai3; 1Dept
of Electronic Science and Engineering, Kyoto University, Kyoto,
Japan; 2Paul-Drude-Institut fur Festkorperelektronik,
Berlin, Germany; 3Nitride Semiconductor Research
Laboratory, Nichia Corporation, Anan, Tokushima, Japan.
2:00 PM E5.2
Microscopic Luminescence Properties and Vertical Exciton
Transport in InGaN/GaN Light Emitters on Si(111) Till Riemann,
Juergen Christen, Karsten Fehse, Armin Dadgar and Alois
Krost; Institute of Experimental Physics, Otto-von-Guericke
University, Magdeburg, Germany.
2:15 PM E5.3
Microphotoluminescence studies of excitonic and multi-excitonic
states of quantum dot-like localization centers in InGaN/GaN
structures K. Sebald, H. Lohmeyer, J. Gutowski, S.
Einfeldt and D. Hommel; Institute of Solid State Physics, University
of Bremen, Bremen, Germany.
2:30 PM E5.4
Franz-Keldysh Effects on Ultrafast Carrier Dynamics in an
InGaN Thin Film. Hsiang-Chen Wang1, Yen-Chen
Lu1, Chih-Chung Teng1, Chih-Chung Yang1,
Kung-Jen Ma2, Chang-Chi Pan3 and Jen-Inn
Chyi3; 1Graduate Institute of Electro-Optical
Engineering, National Taiwan University, Taipei, Taiwan; 2Department
of Mechanical Engineering, Chung Hua University, Taipei, Taiwan;
3Department of Electrical Engineering, National Central
University, Chung-LI, Taiwan.
2:45 PM E5.5
Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells.
Mitsuru Funato1, Koji Nishizuka1,
Yoichi Kawakami1, Yukio Narukawa2 and
Takashi Mukai2; 1Department of Electronic
Science and Engineering, Kyoto University, Kyoto, Japan; 2Nitride
Semiconductor Research Laboratory, Nichia Corporation, Tokushima,
Japan.
3:00 PM BREAK
3:30 PM E5.6
Investigation of Compositional Inhomogeneity in GaN and InGaN
Alloys Using Near-Field Scanning Optical and Scanning Kelvin
Probe Microscopies. Bing Han1, Melville
P. Ulmer2 and Bruce W. Wessels1; 1Department
of Materials Science and Engineering and Materials Research
Center, Northwestern University, Evanston, Illinois; 2Department
of Physics and Astronomy, Northwestern University, Evanston,
Illinois.
3:45 PM E5.7
Carbon-Related Deep States in Compensated n-Type and Semi-Insulating
GaN:C and their Influence on Yellow Luminescence. Andrew
Michael Armstrong1, A. R. Arehart1,
C. Poblenz2, D. S. Green2, U. K. Mishra3,
J. S. Speck2, D. C. Look4 and S. A. Ringel1;
1Electrical Engineering, The Ohio State University,
Columbus, Ohio; 2Materials Department, University
of California, Santa Barbara, Santa Barbara, California; 3Electrical & Computr
Engineering Department, University of California, Santa Barbara,
Santa Barbara, California; 4Semiconductor
Research Center, Wright State University, Dayton, Ohio.
4:00 PM E5.8
Near Field Optical Spectroscopy of GaN/AlN Quantum Dots
Arup Neogi1, Hadis Morkoc3, Brian
P Gorman2, Atsushi Tackeuchi4, Tadashi
Kawazoe5 and Motoichi Ohtsu5; 1Physics,
University of North Texas, Denton, Texas; 2Material
Science and Engineering, University of North Texas, Denton,
Texas; 3Physics and Electrical Engineering, Virginia
Commonwealth University, Richmond, Virginia; 4Applied
Physics, Waseda University, Tokyo, Japan; 5Electrical
Engineering, University of Tokyo, Tokyo, Japan.
4:15 PM E5.9
Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum
Wells Andreas Hangleiter, Daniel Fuhrmann, Thomas
Retzlaff and Uwe Rossow; Institute of Technical Physics, Technical
University of Braunschweig, Braunschweig, Germany.
4:30 PM E5.10
Oxygen-related Shallow Acceptor in GaN. Bo A Monemar1,
Plamen Paskov1, Filip Tuomisto2, Kimmo
Saarinen2, Hiroshi Amano3 and Isamu Akasaki3;
1Dept of Physics and Measurement Technology, Linkoping
University, Linkoping, Sweden; 2Laboratory of Physics,
Helsinki University of Technology, Helsinki, Finland; 3Department
of Electrical and Electronic Engineering, Meijo University,
Nagoya, Japan.
4:45 PM E5.11
Photoluminescence study of plastically deformed GaN Ichiro
Yonenaga1, Michio Makino1, Shun Itoh1,
Takenari Goto2 and Takao Yao2; 1Institute
for Materials research, Tohoku University, Sendai, Japan; 2CIR,
Tohoku University, Sendai, Japan.
SESSION E6: Transistors
Chairs: David Cassagne and Mike Manfra
Wednesday Morning, December 1, 2004
Back Bay C (Sheraton)
8:30 AM *E6.1
Deep_Submicron Gate-Recessed and Field-Plated Algan/Gan Hfets
for Mmwave Applications. Jeong Moon1,
Shihchang Wu2, D. Wong1, I. Milosavljevic1,
P. Hashimoto1, M. Hu1, M. Antcliffe1
and M. Micovic1; 1HRL Laboratories, Malibu,
California; 2Boeing Satellite Systems, El Segundo,
California.
9:00 AM E6.2
GaN Devices for High-Efficiency High Power X-band Radar Performance
Enhancement Grown on High Thermal Conductivity AlN Substrates.
W. Stacey1, P. Lamarre1, J. Murguia3,
V. Tassev3, C. Thomidis2, W. Li2,
T. Moustakas2, J. Lorenzo4, D. Bliss4
and Q. Sun-Paduano4; 1Photronix Inc.,
Waltham, Massachusetts; 2Boston University, Boston,
Massachusetts; 3Solid State Scientific Corporation,
Hollis, New Hampshire; 4Air Force Research Laboratory,
Bedford, Massachusetts.
9:15 AM E6.3
AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss
Switching Device. Seikoh Yoshida, Nariaki Ikeda,
Jiang Li and Kohji Hataya; Yokohama R&D Laboratories, The
Furukawa Electric Co., Ltd., Yokohama, Kanagawa, Japan.
9:30 AM E6.4
AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF Stability.
Salih Saygi, Alexei Koudymov, Grigory Simin, Vinod Adivarahan,
Shiva Rai, Jinwei Yang and M. Asif Khan; Electrical Engineering,
University of South Carolina, Columbia, South Carolina.
9:45 AM E6.5
Normally-off operation GaN HFET using a thin AlGaN layer
for low loss switching devices Nariaki Ikeda, Kazuo
Kato, Jiang Li, Kohji Hataya and Seikoh Yoshida; Furukawa Electric
co.ltd, YOKOHAMA, Japan.
10:00 AM BREAK
10:30 AM *E6.6
Electronic Devices Based on Pyroelectric Nitrides Oliver
Stefan Ambacher, Center for Micro- and Nanotechnologies,
Technical University Ilmenau, Ilmenau, Germany.
11:00 AM E6.7
High Performance GaN Field-Effect-Transistors Grown by MOVPE
with in-situ Si3N4 Surface Passivation.
Marianne Germain, Joff Derluyn, Dongping Xiao, Raf Vandersmissen,
Jo Das, Wenfei Wang, Steven Boeykens, Maarten Leys, Stefan Degroote,
Wouter Ruythooren and Gustaaf Borghs; MCP, IMEC, Leuven, Belgium.
11:15 AM E6.8
High Quality AlGaN/GaN/AlN Based HEMT Structures on Bulk
AlN Single Crystal Substrates for RF Applications. Qhalid
Fareed1, Xuhong Hu1, Jianyu Deng1,
Remis Gaska1, Michael Shur2, Edmundas
Koukstis3 and M. Asif Khan3; 1Sensor
Electronic Technology Inc., Columbia, South Carolina; 2Dept
of ECE and CIE,, Rensselaer Polytechnic Institute, Troy, New
York; 3Dept. of Electrical Engineering, University
of South Carolina, Columbia, South Carolina.
11:30 AM E6.9
Location of Deep Defects in AlGaN/GaN High Electron Mobility
Transistors on Si Substrates and their Impact on Device Performance.
Hartmut Witte1, K.-M. Guenther1,
A. Krtschil1, A. Dadgar1, A. Krost1,
J. Christen1, A.T. Winzer2 and R. Goldhahn2;
1Institute of Experimental Physics, Otto-von-Guericke-University
Magdeburg, Magdeburg, Germany; 2Institute of Physics,
Technical University Ilmenau, Ilmenau, Germany.
11:45 AM E6.10
Thermal Mapping of Defects in AlGaN/GaN HFETs. M.
Kuball1, J.W. Pomeroy1, M.J. Uren2,
T. Martin2, R.S. Balmer2, D.J. Wallis2,
K.P. Hilton2, G. Simin3 and M. Asif Khan3;
1H.H. Wills Physics Laboratory, University of Bristol,
Bristol, United Kingdom; 2QinetiQ Ltd, Malvern, United
Kingdom; 3Department of Electrical Engineering, University
of South Carolina, Columbia, South Carolina.
SESSION E7: Photonic Applications
Chairs: Axel Hoffmann and Yoichi Kawakami
Wednesday Afternoon, December 1, 2004
Back Bay C (Sheraton)
1:30 PM *E7.1
Enhancement of Second Harmonic Generation in One-Dimensional
and Two-Dimensional GaN-based Photonic Crystals. Jeremi
Torres, Dominique Coquillat, Rene Legros, Jean Lascaray, Marine
Le Vassor D Yerville, Emmanuel Centeno, David Cassagne
and Jean-Paul Albert; Groupe d Etude des Semiconducteurs, Universite
Montpellier II - CNRS, Montpellier, France.
2:00 PM E7.2
III-Nitride Deep UV Photonic Crystals. Jagat Shakya,
Kyoung H. Kim, Jingyu Lin and Hongxing Jiang; Physics, Kansas
State University, Manhattan, Kansas.
2:15 PM E7.3
All-Optical Switches Based on Intersubband Transitions in
GaN/AlGaN/AlN Multiple Quantum Wells for Tbit/Sec Operation.
Jahan M. Dawlaty, Farhan Rana and William J. Schaff;
ECE, Cornell University, Ithaca, New York.
2:30 PM E7.4
The Ga-Nitride/air Two-Dimensional Photonic Quasicrystals
Fabricated on GaN-based Light Emitters Bei Zhang,
ZhenSheng Zhang, Jun Xu, Qi Wang, ZhiJian Yang, WeiHua Chen,
XiaoDong Hu, ZhiXin Qin, GuoYi Zhang and DaPeng Yu; Physics,
Peking University, Beijing, China.
2:45 PM E7.5
Photoelectrochemical etching of GaN as a tool for smooth
etching and formation of pores and wires Ion Tiginyanu1,2,
Veaceslav Popa1, Olesea Volciuc1, Oleg
Cojocari3, Veaceslav Ursaki2, Dimitris
Pavlidis3 and Hans Hartnagel3; 1Laboratory
of Low Dimensional Semiconductor Structures, Technical University
of Moldova, Chisinau, Moldova; 2Institute of Applied
Physics, Academy of Sciences of Moldova, Chisinau, Moldova;
3Technical University Darmstadt, Darmstadt, Germany.
3:00 PM BREAK
3:30 PM *E7.6
Strong Rabi Splitting and Polariton Lasers in Nitride-Based
Microcavities Alexey Kavokin and Guillaume Malpuech;
LASMEA, Blaise-Pascal university, Aubiere, France.
4:00 PM E7.7
Crack-Free Monolithic Nitride Microcavity using Highly Reflective
AlInN/GaN Bragg Mirrors. J-F Carlin, Eric Feltin,
J Dorsaz, R Butte, N Grandjean and M Ilegems; Institute for
Quantum Electronics and Photonics, Swiss Federal Institute of
Technology, Lausanne, Vaud, Switzerland.
4:15 PM E7.8
Crack-free Nitride-based Distributed Bragg Reflectors Grown
on Patterned Substrates. Carsten Kruse, Stephan Figge,
Sven Einfeldt, Claudia Roder, Jens Dennemarck and Detlef Hommel;
Institute of Solid State Physics, University of Bremen, Bremen,
Germany.
4:30 PM E7.9
Electroluminescence Characteristics of GaN-Based Micro-Cavity
Light-Emitting Diodes at a Cavity Thickness Below 1μm.
Tetsuo Fujii1, Aurelien David2,
P Morgan Pattison2, Steven P DenBaars1,2,
Claude Weisbuch2 and Shuji Nakamura1,2;
1NICP/ERATO JST, UCSB Group, University of California
Santa Barbara, Santa Barbara, California; 2Materials
Department, University of California Santa Barbara, Santa Barbara,
California.
4:45 PM E7.10
Nanoscale Imaging of InxGa1-xN Thickness
Fluctuations and In Clustering in InxGa1-xN/GaN
Quantum-well Structures Using SCM. Xiaotian Zhou1,
E. T. Yu1, D. I. Florescu2, J. C. Ramer2,
D. S. Lee2 and E. A. Armour2; 1Electrical
and computer engineering, University of California, San Diego,
La Jolla, California; 2Veeco TurboDisc Operations,
Somerset, New Jersey.
SESSION E8: Poster Session
Wednesday Evening, December 1, 2004
8:00 PM
Exhibition Hall D (Hynes)
E8.1
Ultraviolet Raman Scattering of GaN Nanocrystallites: Intrinsic
versus Collective Phenomena Xiang-Bai Chen1,
John L. Morrison1, Jonathan G. Metzger1,
Jarvis Weaskus1, Leah Bergman1
and Andrew P. Purdy2; 1Physics Department,
University of Idaho, Moscow, Idaho; 2Chemistry
Division, US Naval Research Laboratory, Washington DC, District
of Columbia.
E8.2
High-Quality, Low-Cost Continuous Poly-GaN Film on Si an
Glass Substrate Produced by Spin Coating. Huaqiang
Wu1, Athanasios Bourlinos2, Emmanuel
P. Giannelis2 and Michael G. Spencer1;
1Electrical and Computer Engineering, Cornell University,
Ithaca, New York; 2Materials Science and Engineering,
Cornell University, Ithaca, New York.
E8.3
Role of Band-Tails in Photoluminescence of AlGaN Epilayers
in a Wide Range of Alloy Composition, Temperatures and Excitations.
Edmundas Kuokstis, Wenhong Sun, Maxim Shatalov, Jiawei
Li, Jinwei Yang and M. Asif Khan; Electrical Engineering,
University of South Carolina, Columbia, South Carolina.
E8.4
AlN Bulk Crystal Growth on SiC Seeds. Rafael Dalmau,
Raoul Schlesser and Zlatko Sitar; Dept. of Materials Science
and Engineering, North Carolina State University, Raleigh,
North Carolina.
E8.5
Transferrred to E10.7
E8.6
Theoretical determination of the intrinsic free carrier
mobility in AlGaN/GaN quantum wells Francesca Carosella1,
Marianne Germain2 and Jean-Louis Farvacque1;
1Universite' des Sciences et Technologies de Lille,
CNRS UMR 8008, Villeneuve d' Ascq, France; 2IMEC,
Microsystems, Components and Packaging, Leuven, Belgium.
E8.7
Strain and Bow Management of GaN Optoelectronic Devices
Grown on 4 inch Sapphire. C. Sommerhalter2,
H. Protzmann1, M. Luenenbuerger1, J.
Kaeppeler1, B. Schineller1 and Michael
Heuken1; 1AIXTRON AG, Aachen, Germany;
2AIXTRON Inc., Buffalo Grove, Illinois.
E8.8
The Reduction of Threading Dislocations in GaN: A Study
by Transmission Electron Microscopy Ranjan Datta,
Menno J. Kappers, Jonathan S. Barnard and Colin J. Humphreys;
Department of Materials Science and Metallurgy, University
of Cambridge, Cambridge, United Kingdom.
E8.9
Effect of Edge Dislocations on Polarization Dependent Loss
of MBE-grown GaN Ridge Waveguides at Optical Communication
Wavelengths. Norio Iizuka, Kei Kaneko and Nobuo
Suzuki; Corporate R & D Center, Toshiba, Kawasaki, Japan.
E8.10
Microstructure of highly p-type doped GaN sub-contact layers
for low-resistivity contacts Roland Kroeger1,
Jens Dennemarck1, Stephan Figge1, Tim
Boettcher1, Detlef Hommel1, Eliana Kaminska2
and Ania Piotrowska2; 1Institute of
Solid State Physics, University of Bremen, Bremen, Germany;
2Institute of Electron Technology, Warsaw, Poland.
E8.11
Dislocation Nucleation and Subsequent Annihilation in MOCVD-Grown
GaN Films and AlN Nucleation Layers on 4H-SiC Patterned Mesa
Substrates. Nabil D. Bassim1, Mark E.
Twigg1, Charles R. Eddy1, Phillip G.
Neudeck2, Michael A. Mastro1, Richard
L. Henry1, James C. Culbertson1, Andrew
J. Trunek3, J. A. Powell4 and Ronald
T. Holm1; 1Electronics Science and Technology
Division, U.S. Naval Research Laboratory, Washington, SW,
District of Columbia; 2NASA Glenn Research Center,
Cleveland, Ohio; 3OAI, Cleveland, Ohio; 4Sest,
Inc., Cleveland, Ohio.
E8.12
Cathodoluminescence of Praseodymium Doped Amorphous AlN,
GaN and Turbostratic BN. Muhammad Maqbool and Martin
E Kordesch; Department of Physics & Astronomy, Ohio University,
Athens, Ohio.
E8.13
Micro-Characterization of GaN and AlGaN on Si(001)
Fabian Schulze, Till Riemann, Armin Dadgar, Juergen Blaesing,
Juergen Christen and Alois Krost; Institute of Experimental
Physics, Otto-v.-Guericke University Magdeburg, Magdeburg,
Germany.
E8.14
Characterization of P-type Dopants in III-Nitrides by SIMS.
Richard S. Hockett1, Patrick Van Lierde1,
Chunsheng Tian1, Pablo Cantu Alejandro2,
Stacia Keller2 and Steven P. DenBaars2;
1Charles Evans & Associates, Sunnyvale, California;
2Electrical and Computer Engineering and Materials,
University of California, Santa Barbara, California.
E8.15
Strong Room Temperature 510 nm Emission from Cubic InGaN/GaN
Multiple Quantum Wells. Shunfeng Li1,
Donat J. As1, Klaus Lischka1, David
G. Pacheco-Salazar2, Jose Roberto Leite2,
Fernando Cerdeira3 and Eliermes A. Meneses3;
1Department of Physics, University of Paderborn,
Paderborn, Germany; 2Institute of Physics, University
of Sao Paulo, Sao Paulo, Brazil; 3Institute of
Physics Gleb Wataghin, University of Campinas, Campinas, Brazil.
E8.16
Intense, Long-Lived, Room Temperature Photoluminescence
from Localized States in AlGaN Alloys. Charles J. Collins1,
A. V. Sampath1, G. A. Garrett1, W. L.
Sarney1, H. Shen1, M. Wraback1,
A. Y. Nikiforov2, G. S. Cargill2 and
V. Dierolf3; 1Sensors and Electron Devices
Directorate, US Army Research Laboratory, Adelphi, Maryland;
2Department of Materials Science and Engineering,
Lehigh University, Bethlehem, Pennsylvania; 3Department
of Physics, Lehigh University, Bethlehem, Pennsylvania.
E8.17
High-Quality Thin GaN Layers Directly Grown on Sapphire
by HVPE. Denis Martin, Jerome Napierala, Raphael
Butte, Nicolas Grandjean and Marc Ilegems; Swiss Federal Institute
of Technology, Lausanne, Switzerland.
E8.18
High Pressure Annealing of HVPE GaN Free-Standing Films:
Redistribution of Defects and Strain. Tanya Paskova1,
Tadeusz Suski2, Michael Bockowski2,
Plamen Paskov1, Vanya Darakchieva1,
Bo Monemar1, Filip Tuomisto3, Kimmo
Saarinen3 and Pierre Gibart4; 1IFM,
Linkoping University, Linkoping, Sweden; 2Unipress,
Polish Academy of Sciences, Warsaw, Poland; 3Helsinki
University of Technology, Helsinki, Finland; 4Lumilog,
Vallauris, France.
E8.19
Spectral Properties of InGaN/GaN-Structures Grown by MOCVD
on Non-Planar Si(111) Substrates Andrea Strittmatter1,
L. Reissmann1, D. Bimberg1, T. Riemann2
and J. Christen2; 1Technical University
Berlin, Institute of Solid State Physics, Sekr. PN 5-2, Berlin,
Germany; 2Otto-von-Guericke University Magdeburg,
Inst. of Experimental Physics, Magdeburg, Germany.
E8.20
Comparison of the Effect of Gate Dielectric Layer on 2DEG
Carrier Concentration in Strained AlGaN/GaN Heterostructure.
Wenfei Wang1,2, Marianne Germain1,
Joff Derluyn1, Ingrid Dewolf1, Dominique
Schreurs1,2, Wouter Ruythooren1, Johan
Das1, Raf Vandersmissen1 and Gustaaf
Borghs1,3; 1MCP, IMEC, Leuven, Belgium;
2E.E., K.U.Leuven, Leuven, Belgium; 3Physics,
K.U.Leuven, Leuven, Belgium.
E8.21
Partial Dislocations in Wurtzite Structure GaN. Rong
Liu1, Fernando A. Ponce1, Changqing
Chen2, Jinwei Yang2 and M. Asif Khan2;
1Dept. of Physics and Astronomy, Arizona State
University, Tempe, Arizona; 2Dept. of Electrical
Engineering, University of South Carolina, Columbia, South
Carolina.
E8.22
Abstract Withdrawn
E8.23
X-ray Characterization of GaN Single Crystal Layers Grown
by the Ammonothermal Technique on HVPE GaN Seeds and by the
Sublimation Technique on Sapphire Seeds Balaji Raghothamachar1,
Michael Dudley1, Michael Callahan2,
Buguo Wang2, Phanikumar Konkapaka3,
Huaqiang Wu3, Michael Spencer3 and David
Bliss2; 1Materials Science & Engineering,
Stony Brook University, Stony Brook, New York; 2Sensors
Directorate, Air Force Research Laboratory, Hanscom AFB, Massachusetts;
3Electrical and Computer Engineering, Cornell University,
Ithaca, New York.
E8.24
Sychrotron White Beam X-ray Topography (SWBXT) and High
Resolution Triple Axis Diffraction Studies on AlN Layers Grown
on 4H- and 6H-SiC Seeds Balaji Raghothamachar1,
Michael Dudley1, Rafael Dalmau2, Raoul
Schlesser2 and Zlatko Sitar2; 1Materials
Science & Engineering, Stony Brook University, Stony Brook,
New York; 2Materials Science and Engineering, North
Carolina State University, Raleigh, North Carolina.
E8.25
Atomic and Electronic Structure of Mixed and Partial Dislocations
in GaN. Ilke Arslan1, Andrew Bleloch2,
Eric A. Stach3 and Nigel D. Browning4,3;
1Department of Materials Science and Metallurgy,
University of Cambridge, Cambridge, United Kingdom; 2UK
SuperSTEM Laboratory, Daresbury Laboratory, Daresbury, United
Kingdom; 3National Center for Electron Microscopy,
Lawrence Berkeley National Laboratory, Berkeley, California;
4Department of Chemical Engineering and Materials
Science, University of California at Davis, Davis, California.
E8.26
Investigation of the Structure and Optical Properties of
High Al Content AlGaN Films Grown by MBE. Anirban Bhattacharyya1,
R. Chandrasekaran1, T. D. Moustakas1,
Yiyi Wang2, Ahmet S Ozcan2, K. F. Ludwig2,
Zhou Lin3 and David J Smith3; 1Electrical
and Computer Engineering, Boston University, Boston, Massachusetts;
2Physics, Boston University, Boston, Massachusetts;
3Center for Solid State Science and Department
of Physics and Astronomy, Arizona State University, Tempe,
Arizona.
E8.27
Abstract Withdrawn
E8.28
P-Type GaN Epitaxial Layers and AlGaN/GaN Heterostructures
with High Hole Concentration and Mobility Grown by HVPE.
Alexander Usikov1,2, Oleg Kovalenkov1,
Vladimir Ivantsov1, Vladimir Dmitriev1,
Natalia Shmidt2, Dmitrii Poloskin2,
Vladimir Petrov2 and Valentin Ratnikov2;
1Technologies and Devices International, Silver
Spring, Maryland; 2A.F. Ioffe Physico-Technical
Institute of Russian Academy of Sciences, St.-Petersburg,
Russian Federation.
E8.29
Abstract
Withdrawn
E8.30
Impact of H2-Preannealing of Sapphire Substrate
on Crystallization of Low-Temperature-Deposited AlN Buffer
Layer. Michinobu Tsuda1,2, Motoaki Iwaya2,
Satoshi Kamiyama2, Hiroshi Amano2 and
Isamu Akasaki2; 1Single Crystal Division,
Kyocera Corporation, Youkaichi, Shiga, Japan; 2Faculty
of Science & Technology, 21st Century COE "Nano-Factory",
Meijo University, Nagoya, Aichi, Japan.
E8.31
Low Frequency Noise Characterization In AlGaN/GaN HEMTs
With Varying Gate Recess Depth Shrawan Kumar Jha1,
B. H. Leung1, Charles Surya1, H. Schweizer2
and M. H. Pilkhuhn2; 1Electronic &
Information Engineering, Polytechnic University of HongKong,
Kowloon, Hong Kong; 2Department of Physics, University
of Stuttgart, Stuttgart, Germany.
E8.32
Growth and Physics of GaN-Based Wrinkled Quantum Wells
by MBE. Jasper S. Cabalu1, Christos
Thomidis1, Theodore D. Moustakas1 and
Spilios Riyopoulus2; 1Electrical and
Computer Engineering, Boston University, Boston, Massachusetts;
2Science Applications International Corporation,
McLean, Virginia.
E8.33
The Influence of Stacking Faults on the Optical Properties
of GaN. Jin Mei1, Sridhar Srinivasan1,
Rong Liu1, Fernando A Ponce1, Takashi
Mukai2 and Shinji Tanaka2; 1Dept.
Physics and Astronomy, Arizona State University, Tempe, Arizona;
2Nichia Corporation, Anan, Tokushima, Japan.
E8.34
Influence of Substrate Misorientation Angle and Direction
in Molecular-Beam Epitaxial Growth of GaN on Off-Axis SiC
(0001). Jun Suda1,2, Yuki Nakano1
and Tsunenobu Kimoto1; 1Dept of Electronics
Science and Engineering, Kyoto University, Kyoto, Japan; 2PRESTO,
Japan Science and Technology Agency, Kawaguchi, Japan.
E8.35
Abstract
Withdrawn
E8.36
Molecular Beam Epitaxy of GaN on Lattice-matched ZrB2
Substrates Using Low Temperature GaN and AlN Nucleation Layers
Rob Armitage1, Kazuhiro Nishizono2,
Jun Suda1 and Tsunenobu Kimoto1; 1Kyoto
University, Kyoto, Japan; 2Kyocera Corporation,
Kyoto, Japan.
E8.37
Study on Surface Characteristics in Mg-doped GaN Light
Emitting Diode Grown by MOCVD Hyun jung Lee, Bae
Kyun Kim, Kyu Han Lee, Je Won Kim, Dong Joon Kim, Sun Woon
Kim and Jeong Tak Oh; Samsung Electro-Mechanics, Suwon, Kyunggi-Do,
South Korea.
E8.38
In-situ Monitoring of Growth Parameters during Epitaxial
Growth of AlN. David Bliss1, Vladimir Tassev2,
David Weyburne1, Sheng-Qi Wang2, Mitchell
Fait1, Jeffrey Anthis3, Nam Nguyen3,
Michael Suscavage1, Chris Santeufemio1
and John Bailey2; 1Air Force Research
Laboratory, Hanscom AFB, Massachusetts; 2Solid
State Scientific Corporation, Hollis, New Hampshire; 3Epichem,
Inc., Haverhill, Massachusetts.
E8.39
Self-Organized Nano-Column GaN/AlN Superlattice Crystals Grown
by RF-MBE
Kooji Yamamo, Makoto Tada,
Akihiko Kukuchi, Katsumi Kishino;
Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku, Tokyo, Japan.
E8.40
Dislocation Reduction in GaN Epilayers by Maskless
Pendeo-Epitaxy Process. Dong
Jun Park1,
Jeong
Yong Lee1,
Hyung
Koun Cho2,
Chang
Hee Hong3,
and Hung
Seob Cheong3; 1Materials
Science and Engineering, Korea
Advanced Institute of Science and Engineering,
Daejeon, South Korea, 2Metallurgical
Engineering, Dong-A University, Busan, South Korea, 3Semiconductor
Science and Technology, Chonbuk National University,
Chonju,
South Korea.
E8.41
Time-Resolved Photoluminescence Studies of Eu3+ Centers
in GaN. Hong
Ying Peng1,
Henry
O. Everitt1,
Chang-Won Lee1,
J.
M. Zavada2,
D.
S. Lee3,
and A.
J. Steckl3; 1Department
of Physics, Duke University, Durham, NC, USA; 2US
Army Research Office, Research Triangle Park, NC, USA; 3Nanoelectronics
Laboratory, University of Cincinnati, Cincinnati, OH,
USA.
E8.42
TEM Analysis of Reduction of
Dislocation Density in AlGaN Grown on an AlN Template. Noriyuki Kuwano1,
M. Haraguchi2,
A. Ishiga3,
H. Miyake3,
K. Hiramatsu3,
and T. Shibata4,3; 1ASTEC,
Kyushu University, Kasuga, Fukuoka, Japan; 2Dept
Adv Sci for Electr & Mater, Kyushu University, Kasuga,
Fukuoka, Japan; 3Dept Elec & Electr, Mie
University, Tsu, Mie, Japan; 4NGK
Insulators Ltd, Nagoya, Aichi, Japan.
SESSION E9: New Directions in Nitride Research
Chairs: Oliver Ambacher and Alexey Kavokin
Thursday Morning, December 2, 2004
Back Bay C (Sheraton)
8:30 AM *E9.1
Spintronics in Nitrides. Tomasz Dietl, Institute
of Physics, Polish Academy of Sciences, Warszawa, Poland.
9:00 AM E9.2
Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg
Heterostructures. Erdem F. Arkun1, Mason
J. Reed1, Acar E. Berkman1, Nadia El-Masry1,
Meredith L. Reed3, John Zavada2 and Salah
M. Bedair3; 1Materials Science and Engineering,
North Carolina State University, Raleigh, North Carolina; 2Army
Research Office, Durham, North Carolina; 3Electrical
and Computer Engineering, North Carolina State University, Raleigh,
North Carolina.
9:15 AM E9.3
Synthesis and Properties of GaxMn1-xN films Rong Zhang,
Physics, Nanjing University, Nanjing, China.
9:30 AM E9.4
Impact of Manganese Incorporation on the Structural and Magnetic
Properties of MOCVD-Grown Ga1-xMnxN.
Matthew H. Kane1,2, Ali Asghar1,
Hun Kang1, Adam M Payne1, Ian T. Ferguson1,
Christopher R. Summers2, Christy R. Vestal3,
Z. John Zhang3, Martin Strassburg1,4,
Jayantha Senawiratne4, Nikolaus Dietz4,
Dmitry Azamat5, Wolfgang Gehlhoff5, Uta
Haboeck5 and Axel Hoffmann5; 1School
of Electrical and Computer Engineering, Georgia Tech, Atlanta,
Georgia; 2School of Materials Science and Engineering,
Georgia Institute of Technology, Atlanta, Georgia; 3School
of Chemistry and Biochemistry, Georgia Institute of Technology,
Atlanta, Georgia; 4Department of Pysics and Astronomy,
Georgia State University, Atlanta, Georgia; 5Institut
fuer Festkoerperphysik, Technische Universitaet Berlin, Berlin,
Germany.
9:45 AM E9.5
Optical and Structural Investigations on Mn Ion States in
MOCVD-grown Ga1-xMnxN Martin Strassburg1,2,
Jayantha Senawiratne1, Nikolaus Dietz1,
Matthew H. Kane2, Ali Asghar2, Adam M.
Payne2, Ian T. Ferguson2, Christopher
R. Summers3, Ute Haboeck4, Axel Hoffmann4,
Dmitry Azamat4 and Wolfgang Gehlhoff4;
1Department of Physics and Astronomy, Georgia State
University, Atlanta, Georgia; 2School of Electrical
and Computer Engineering, Georgia Institute of Technology, Atlanta,
Georgia; 3School of Materials Science and Engineering,
Georgia Institute of Technology, Atlanta, Georgia; 4Institut
fuer Festkoerperphysik, Technische Universitaet Berlin, Berlin,
Germany.
10:00 AM BREAK
10:30 AM *E9.6
Site Multiplicity of Rare Earth Ions in III-Nitride Hosts.
Kevin Peter O'Donnell, Viatcheslav Katchkanov and Renibel
Network; Physics, University of Strathclyde, Glasgow, United
Kingdom.
11:00 AM E9.7
Optical activation of implanted Eu ions in AlN-capped GaN
Robert W. Martin1, Iman S. Roqan1,
Ke Wang1, Uli Wahl2, Katherina Lorenz2,
Eduardo Alves2, Stephane Dalmasso1, Kevin
P. O'Donnell1, Sandra Ruffenach3, Olivier
Briot3 and Renibel Network1; 1Physics
Department, Strathclyde University, Glasgow, United Kingdom;
2ITN, 2686-953 Sacavem, Portugal; 3GES,
Universite de Montpellier II, 34095 Montpellier, France.
11:15 AM E9.8
Aquamarine Luminescence Band in Undoped GaN. Michael
A. Reshchikov1,2, Lei He2, Richard
J. Molnar3, S. S. Park4, K. Y. Lee4
and Hadis Morkoc2,1; 1Physics, Virginia
Commonwealth University, Richmond, Virginia; 2Electrical
Engineering, Virginia Commonwealth University, Richmond, Virginia;
3Lincoln Laboratory, Massachsetts Institute of Technology,
Lexington, Massachusetts; 4SAIT, Suwon, South Korea.
11:30 AM E9.9
Heterojunction Band Offset Measurements of the ZnO-GaN Interface.
Charles Fulton1, R. J. Nemanich2,1,
C. Liu3, Sang-Jun Cho3 and H. Morkoc3;
1Materials Science & Engineering, North Carolina
State Univ, Raleigh, North Carolina; 2Physics, North
Carolina State Univ, Raleigh, North Carolina; 3Electrical
Engineering & Physics, Virginia Commonwealth Univ., Richmond,
Virginia.
11:45 AM E9.10
The interaction of defects and hydrogen in proton-irradiated
GaN(Mg,H). Carleton H. Seager1 and Sam
M. Myers2; 101111, Sandia National Laboratories,
Albuquerque, New Mexico; 201112, Sandia National
Laboratories, Albuquerque, New Mexico.
SESSION E10: Lasers and Light-Emitting Diodes II
Chairs: Kevin P. O'Donnell and Shigetaka Tomiya
Thursday Afternoon, December 2, 2004
Back Bay C (Sheraton)
1:30 PM *E10.1
Advances in AlGaN-based Deep-UV LEDs. Mary H. Crawford,
Andrew A. Allerman, Arthur J. Fischer, Katherine H. A. Bogart,
Stephen R. Lee, Weng W. Chow, Sebastian M. Wieczorek, Robert
J. Kaplar and Steven R. Kurtz; Sandia National Labs, Albuquerque,
New Mexico.
2:00 PM *E10.2
Homo- and Heteroepitaxy for GaN-Based Laser Diodes. S.
Figge, T. Boettcher, J. Dennemarck, S. Einfeldt, C. Roder and
D. Hommel; Institute of Solid State Physics, University
of Bremen, Bremen, Germany.
2:30 PM E10.3
Development of LED Structures for General Illumination
David Brackin Nicol1, Ali Asghar1,
Dhairya Mehta1, My Tran1, Hun Kang1,
Ian T. Ferguson1, Mustafa Alevli2, Jayantha
Senawiratne2, Christoph Hums2,3, Martin
Strassburg2, Nikolaus Dietz2 and Axel
Hoffmann3; 1Electrical and Computer Engineering,
Georgia Institute of Technology, Atlanta, Georgia; 2Department
of Physics and Astronomy, Georgia State University, Atlanta,
Georgia; 3Institute of Solid State Physics, Technical
University of Berlin, Berlin, Germany.
2:45 PM E10.4
Thermal Analysis of Multi-Quantum Well LEDs in InGaN/GaN/Sapphire
Structure Using Nematic Liquid Crystal Thermography. Jeong
Park1, Chin C. Lee1 and MooWhan Shin2;
1Electrical Engineering and Computer Science, University
of California, Irvine, Irvine, California; 2Department
of Materials Science and Engineering, Myong Ji University, Yongin,
Kyunggi-Do, South Korea.
3:00 PM E10.5
Nitride LEDs on 6" Si substrates Jing Li1,
J.Y. Lin2 and H.X. Jiang2; 1III-N
Technology, Inc, Manhattan, Kansas; 2Physics, Kansas
State University, Manhattan, Kansas.
3:15 PM BREAK
3:30 PM *E10.6
Nitride-Based Light-Emitting Diodes Grown on Particular Substrates:
ZrB2, (30-38) SiC and R-faced Sapphire. Satoshi
Kamiyama, Motoaki Iwaya, Hiroshi Amano and Isamu Akasaki;
Faculty of Science and Technology, Meijo University, Nagoya,
Japan.
4:00 PM E10.7
Reliable
and Efficient Homoepitaxially-grown InGaN/GaN Light-emitting
Diodes. X. A. Cao, S.D. Arthur, S.F. LeBoeuf, J.M.
Teetsov and M.P. D'Evelyn; GE Global Research Center, Niskayuna,
New York.
4:15 PM E10.8
Reliability and Operation Lifetime Studies of sub-280 nm
Ultraviolet Emitters on Sapphire Substrates Ashay Chitnis,
Maxim Shatalov, Shuai Wu, Salih Saygi, Wenhong Sun, Vinod Adivarahan
and M. Asif Khan; Electrical Engineering, Univ. of South Carolina,
Columbia, South Carolina.
4:30 PM E10.9
Characterization of Minority-Carrier Hole Transport in Nitride-Based
Light-Emitting Diodes with Optical and Electrical Time-Resolved
Techniques. Robert J Kaplar, Steven R Kurtz, Daniel
D Koleske, Andrew A Allerman, Arthur J Fischer and Mary H Crawford;
Sandia National Laboratories, Albuquerque, New Mexico.
4:45 PM E10.10
High Power 340 nm UV-LEDs Grown by Plasma Assisted Molecular
Beam Epitaxy (PAMBE). Jasper S. Cabalu1,
Christos Thomidis1, Anirban Battacharyya1,
Theodore D. Moustakas1 and Charles Collins2;
1Electrical and Computer Engineering, Boston University,
Boston, Massachusetts; 2U.S. Army Research Laboratory,
Adelphi, Maryland.
SESSION E11: Poster Session
Chairs: Detlef Hommel and Martin Kuball
Thursday Evening, December 2, 2004
8:00 PM
Exhibition Hall D (Hynes)
E11.1
Grain Expansion and Subsequent Seeded Growth of AlN Single
Crystals. Dejin Zhuang, Raoul Schlesser and Zlatko
Sitar; Materials Science and Engineering, North Carolina State
University, Raleigh, North Carolina.
E11.2
Optimization of Growth and Activation of Highly Doped p-type
GaN for Tunnel Junctions as Buried Current Spreading Layers
in Dual Wavelength LEDs for Phosphor Pumping David Brackin
Nicol, Ali Asghar, Edem Wornyo and Ian T Ferguson; Electrical
and Computer Engineering, Georgia Institute of Technology, Atlanta,
Georgia.
E11.3
Study on the Sublimation Growth of AlN Bulk Crystals.
Balakrishnan Krishnan1, Motoaki Iwaya1,
Satoshi Kamiyama1, Hiroshi Amano1, Isamu
Akaskai1, Takashi Takagi2 and Tadishi
Noro2; 1Materials Science and Engineering
(21st Century COE Nano-Factory), Meijo University, Nagoya, Japan;
2Ceramic Operation, Ibiden Company Ltd., Ogaki, Japan.
E11.4
In-situ Measurements of the Critical Thickness for Strain
Relaxation in AlGaN/GaN Heterostructures. Stephen R.
Lee1, Dan Koleske1, Karen Cross1,
Jerry Floro1, Karen Waldrip1, Adam Wise2
and Subhash Mahajan2; 1Sandia National
Laboratories, Albuquerque, New Mexico; 2Department
of Chemical and Materials Engineering, Arizona State University,
Tempe, Arizona.
E11.5
Resonant and Non-Resonant Micro-Raman Studies of Wide Bandgap
Nanopowders Leah Bergman1, Xiang-Bai Chen1,
John L. Morrison1, Jesse Huso1, Dmitriy
Myedvyedyev1, Heather M. Hoeck1 and Shlomo
Efrima2; 1Physics Department, University
of Idaho, Moscow, Idaho; 2Department of Chemistry,
Ben-Gurion University, Beer-Sheva, Israel.
E11.6
Direct AFM Observation of Strain Effects on MOCVD Grown GaN
Epilayer Surface Morphology. Doru Florescu, J.C.
Ramer, V.N. Merai, A Parekh, D.S. Lee, D Lu and E.A. Armour;
Veeco TurboDisc, Somerset, New Jersey.
E11.7
Spectroscopic Ellipsometry Characterization of Amorphous
III-V Nitride Thin Films. Jebreel M. Khoshman and
Martin E. Kordesch; Physics & Astronomy, Ohio University,
Athens, Ohio.
E11.8
Room-temperature synthesis of ultraviolet-emitting nanocrystalline
GaN films using photochemical vapor deposition Takashi
Yatsui1, Syunsuke Yamazaki2, Takashi
Nagira2, Motoichi Ohtsu3,1,2, Tae-Won
Kim4 and Hiroshi Fujioka3,4; 1SORST,
JST, Machida, Tokyo, Japan; 2Interdisciplinary Graduate
School of Science and Engineering, Tokyo Institute of Technology,
Yokohama, Kanagawa, Japan; 3Faculty of Engineering,
the University of Tokyo, Bunkyo-ku, Tokyo, Japan; 4Kanagawa
Academy of Science and Technolog, Kawasaki, Kanagawa, Japan.
E11.9
High-Frequency Generation in Low-Mobility Superlattices.
Vladimir Litvinov1 and Alexander Manasson2;
1WaveBand Corporation, Irvine, California; 2Department
of Applied Physics, University of Michigan, Ann Arbor, Ann Arbor,
Michigan.
E11.10
Crystallinity and Polarity of III-V Nitride Semiconductors
Grown on ZnO. Takeshi Ohgaki1, Naoki Oh |
