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2003 MRS Fall Meeting
December 1-5, 2003
Hynes Convention Center and Sheraton Boston Hotel
Boston, MA

MRS Symposium T: Self-Organized Processes in Semiconductor Heteroepitaxy

Self-organized processes occurring during semiconductor heteroepitaxy have shown significant promise for a wide range of electronic and optoelectronic applications. For example, strain-induced self assembly of zero-dimensional quantum structures has led to the fabrication of record low threshold current density lasers. In addition, ordered arrangements of low-dimensional semiconductor structures have been achieved by alloy decomposition of films and multilayers, leading to the formation of polarization-sensitive quantum wires. On an atomic scale, spontaneous long-range ordering has led to bandstructure modifications which significantly impact device performance. Furthermore, short-range ordering and/or clustering often occur and may lead to higher efficiencies of nitride-based optoelectronic devices and higher temperature operation of spintronic devices.

The goal of this symposium is to address issues related to the understanding, control, and applications of several self-organized processes in semiconductor epitaxy, including strain-induced self assembly, clustering, alloy phase separation and composition modulation, and long- and short-range ordering.

Specific topics of interest include, but are not limited to:

· Fundamental aspects of growth mechanisms
· Controlled methods for forming self-organized nanostructure arrays
· Influence of surfactants on self-organized processes
· In-situ studies of the role of surface-controlled processes
· Structural studies, including quantitative measurements of self-organization
· Optical, electronic, and magnetic properties of self-organized structures
· Devices exploiting self-organization phenomena

Invited speakers include: R.N. Bhatt (Princeton Univ.), P.K. Bhattacharya (Univ. of Michigan-Ann Arbor), D. Bimberg (Technical Univ. of Berlin, Germany), R. Desai (Univ. of Toronto, Canada), G. Dohler (Univ. Erlangen, Germany), M. Lagally (Univ. of Wisconsin-Madison), J. Li (Univ. of Houston), S. Mahajan (Arizona State Univ.), P. Petroff (Univ. of California-Santa Barbara), C. Priester (ISEN, France), G. Salamo (Univ. of Arkansas), B. Spencer (State Univ. of New York-Buffalo), G. Springholz (Inst. für Halbleiterphysik, Johannes Kepler Univ. Austria), C. Wang (Massachusetts Inst. of Technology-Lincoln Labs), Z.G. Wang (Chinese Acad. of Sciences, Beijing, China), L. Whitman (Naval Research Lab), S. Zhang (National Renewable Energy Lab), and Y. Zhang (National Renewable Energy Lab).

Symposium Organizers

Rachel S. Goldman
University of Michigan, Dept. of Materials Science & Engineering, 2300 Hayward St., Ann Arbor, MI 48109-2136
Tel 734-647-6821, Fax 734-763-4788, rsgold@engin.umich.edu

Richard Noetzel
Eindhoven University of Technology, COBRA Inter-University Research Institute, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Tel 31-40-247-2047, Fax 31-40-246-1339, r.noetzel@tue.nl

Andrew G. Norman
National Renewable Energy Laboratory, MS 3215, 1617 Cole Blvd., Golden, CO 80401
Tel 303-384-6483, Fax 303-384-6604, andrew_norman@nrel.gov

Gerald B. Stringfellow
The University of Utah, College of Engineering, Rm. 214, 1495 E. 100 South, Salt Lake City, UT 84112-1109
Tel 801-581-8387, Fax 801-581-8692, stringfellow@coe.utah.edu

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