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2003 MRS Fall Meeting
December 1-5, 2003
Hynes Convention Center and Sheraton Boston Hotel
Boston, MA

MRS Symposium R: Radiation Effects and Ion Beam Processing of Materials

Radiation with energetic beams or ion implantation can produce dramatic improvements or degradation in the properties of materials. An understanding of the microstructural changes occurring during irradiation is critical for the development of predictive models. The scope of this symposium will cover both microstructural and property changes occurring in solids during energetic ion, electron, neutron, or gamma-ray irradiation. This symposium, which is the seventh in a series of MRS symposia held every two years in the past until 2000, is intended to bring together researchers working on radiation effects in different material systems. Materials of interest include metals, intermetallics, semiconductors, insulators, and superconductors. Both experimental and theoretical studies are solicited, with a particular emphasis on linking state-of-the-art modeling with most recent experimental observations.

Specific topics where contributions are encouraged include:

· Advanced techniques for defect characterization
· Ion-beam-assisted deposition
· Ion-beam modification of physical properties
· Ion-beam processing of semiconductors
· Molecular dynamic and Monte Carlo simulations of radiation effects
· Radiation-induced amorphization and recrystallization
· Radiation and ion-implantation-induced nanostructures
· Radiation damage in nuclear fission and fusion reactor materials
· Radiation effects in nuclear waste materials

Invited speakers include: R. Birtcher (Argonne National Lab), G. Dollinger (Technische Univ. München, Germany), R. Ewing (Univ. of Michigan), J. Fassbender (Univ. Kaiserslautern, Germany), J. Hirvonen (Army Research Lab), K. Jones (Univ. of Florida), N. Kishimoto (National Inst. of Materials Science, Japan), S. Matsumura (Kyushu Univ., Japan), A. Meldrum (Univ. of Alberta, Canada), W. Moeller (Forschungszentrum Rossendorf, Germany), K. Nordlund (Univ. of Helsinki, Finland), K. Sickafus (Los Alamos National Lab), W. Skorupa (Forschungszentrum Rossendorf, Germany), L. Thome (CNRS-Orsay, France), K. Trachenko (Univ. of Cambridge, United Kingdom), G. Was (Univ. of Michigan), S. Watanabe (Hokkaido Univ., Japan), W. Weber (Pacific Northwest National Lab), and S. Zinkle (Oak Ridge National Lab).

Symposium Organizers

Lumin Wang
University of Michigan, Dept. of Nuclear Engineering & Radiological Sciences, 2355 Bonisteel Blvd., Ann Arbor, MI 48109-2104
Tel 734-647-8530, Fax 734-647-8531, lmwang@umich.edu

Rainer Fromknecht
Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut für Festkörperphysik, P.O. Box 3640, D-76021 Karlsruhe, Germany
Tel 49-7247-82-3940, Fax 49-7247-82-4624, fromknecht@ifp.fzk.de

Daniel F. Downey
Varian Semiconductor Equipment, 35 Dory Rd., Gloucester, MA 01930-2297
Tel 978-282-2226, Fax 978-281-1897, dan.downey@vsea.com

Lance L. Snead
Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge TN 37831-6138
Tel 865-574-9942, Fax 865-576-8595, sneadll@ornl.gov

Heishichiro Takahashi
Hokkaido University, Center for Advanced Research of Energy Technology, Nishi-8, Kita-ku, Hokkaido, Sapporo 060-8628, Japan
Tel 81-11-706-6767, Fax 81-11-757-3537, takahash@ufml.caret.hokudai.ac.jp

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