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MRS Symposium E: Fundamentals of Novel Oxide/Semiconductor Interfaces The interfaces between oxides and semiconductors are important to a number of emerging technologies and are becoming all the more critical as devices scale into the nanometer regime. Concurrent with advances in incorporating new gate dielectrics in traditional Si technology, a considerable number of other applications for novel oxide/semiconductor interfaces are currently being considered. These include ferroelectric/semiconductor interfaces for novel sensors and oxide/compound semiconductor interfaces for field-effect transistors. Numerous research efforts are focused on understanding and exploiting the properties of novel oxide/semiconductor interfaces that fulfill the stringent requirements for these and other applications. The goal of this symposium is to bring together researchers involved with novel oxide/semiconductor interfaces, including, but not limited to, traditional Si-based devices. Of particular interest for this symposium are contributions on fundamental growth studies, atomic scale structural characterization, simulation and modeling of interfaces, and novel physical characterization methods of defects. Papers are anticipated in the following areas: ·
Epitaxial growth of oxides on semiconductors (including SiGe, SiC, Ge,
Si, GaAs, GaN) and semiconductors on oxides Joint sessions are anticipated with Symposia C: Ferroelectric Thin Films XII, Y: GaN and Related Alloys, Z: Progress in Compound Semiconductor Materials III-Electronic and Optoelectronic Applications, and KK: Atomic Scale Materials Design-Modeling and Simulation. Invited speakers (partial list) include: Israel Baumvol (UFRGS, Brazil), Matt Copel (IBM), Brent Gila (Univ. of Florida), Supratik Guha (IBM), Yong Liang (Motorola), T.P. Ma (Yale Univ.), Gerd Norga (IBM Zürich, Switzerland), Jasprit Singh (Univ. of Michigan), and Akira Toriumi (Univ. of Tokyo, Japan). Symposium Organizers Susanne
Stemmer Cammy
R. Abernathy Evgeni
Gusev Darrell
G. Schlom
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