MRS Symposium C: Ferroelectric Thin Films XII

This symposium will cover the scientific and technological exploration of polycrystalline, epitaxial, and nanocrystalline ferroelectric thin films. A broad range of topics will be covered, including fundamental material properties, device and materials integration, and developments in the design and synthesis of new materials. Focus areas include ferroelectric switching for nonvolatile memory devices, high-dielectric constant materials for integrated capacitors, tunable materials for RF circuits, high-response pyroelectric materials, piezoelectric properties for micromachines, low-loss electro-optical thin films, and basic research on all compounds possessing such properties. Several other rapidly developing research areas will also be represented.

Contributions are solicited in, but not limited to, the following areas:

· Advances in microstructure-processing-property relationships for thin-film ferroelectrics
· New materials and devices
· FeRAM materials and devices
· Integrated capacitor technologies, including DRAM and decoupling capacitor materials and devices
· Advances in ferroelectric and electrode deposition
· Ferroelectric size and electrode effects
· Electrode and size effects
· Issues for integration into semiconductor processes, such as H2-induced degradation, and ferroelectric and electrode deposition and etch processes
· Measurements and theory of domain switching in thin-film ferroelectrics
· Reliability in thin-film ferroelectrics
· Pyroelectric materials and devices
· Electro-optic materials and devices
· Ferroelectric and high-permittivity transistor gate dielectrics
· Piezoelectric materials for micromachines and microsensors
· RF materials and devices

Joint sessions are anticipated with Symposia B: Materials, Integration, and Packaging Issues for High-Frequency Devices, and E: Fundamentals of Novel Oxide/Semiconductor Interfaces.

A tutorial complementing this symposium is tentatively planned. Further information will be included in the program that will be available in September.

Invited speakers include: Jeffrey S. Cross (Fujitsu Labs, Japan), Lukas Eng (Univ. of Technology Dresden, Germany), Yoshihiro Ishibashi (Aichi Shukutoku Univ., Japan), Paul McIntyre (Stanford Univ.), Paul Muralt (EPFL, Switzerland), Yuuji Noguchi (Univ. of Tokyo, Japan), Herbert Schroeder (Forschungszentrum Jülich, Germany), Koukou Suu (Ulvac Ltd., Japan), and Bob York (Univ. of California-Santa Barbara).

Symposium Organizers

Angus Kingon
North Carolina State University, Dept. of Materials & Science and Engineering, Campus Box 7919, 218 Research Bldg., 1001 Capability Dr., Raleigh, NC 27695-7919
Tel 919-515-8636, Fax 919-515-3419, angus_kingon@ncsu.edu

Susanne Hoffmann-Eifert
IFF/EKM, Forschungszentrum Jülich, 52425 Jülich, Germany
Tel 49-2461-61-6505, Fax 49-2461-61-2550, su.hoffmann@fz-juelich.de

Hiroshi Funakubo
Tokyo Institute of Technology, Dept. of Innovative and Engineered Materials, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Tel/Fax 81-45-924-5446, funakubo@iem.titech.ac.jp

Vikram Joshi
Symetrix Corporation, 5055 Mark Dablng Blvd., Colorado Springs, CO 80918
Tel 719-594-6145, Fax 719-598-3437, vikram@symetrixcorp.com

Ivo P. Koutsaroff
Gennum Corporation, 970 Fraser Dr., Burlington, Ontario L7L 5P5, Canada
Tel 905-632-2999 x-2158, Fax 905-632-2055, ikoutsar@gennum.com

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