|
Order
|
Control
ID
|
Final
ID
|
Title
|
Presenting
Author
|
Start Time
End Time
|
|
1
|
43797
|
E3.1
|
Scanning
Tunneling Spectroscopy Characterization of Oxide/Silicon
Interfaces.
|
Louis
Nemzer
|
8:00
PM
8:00 PM
|
|
2
|
51265
|
E3.2
|
Oxide-Semiconductor
Interface Characterization Using Kelvin Probe-AFM In
Combination With Corona-Charge Deposition
|
Bert
Lagel
|
8:00
PM
8:00 PM
|
|
3
|
52511
|
E3.3
|
Field-induced
Reactions of Water Molecules at Si-dielectric Interfaces.
|
Leonidas
Tsetseris
|
8:00
PM
8:00 PM
|
|
4
|
48256
|
E3.4
|
Kinetics
of thermal oxidation at the Si(001)-SiO2 interface;
Revisited from high-temperature.
|
Hiroo
Omi
|
8:00
PM
8:00 PM
|
|
5
|
44947
|
E3.5
|
The
Oxidation of Si-Ge Alloys and Analyses of Sub-Bonded
Si -Implication for Thin Film Oxidation of Si.
|
Ralph
Jaccodine
|
8:00
PM
8:00 PM
|
|
6
|
46576
|
E3.6
|
Nanoscale
analysis of local leakage currents in stressed gate
SiO2 films by conducting atomic force microscopy.
|
Hiroki
Kondo
|
8:00
PM
8:00 PM
|
|
7
|
47100
|
E3.7
|
First-principles
Investigation for Reacition of Oxygen at Ultrathin Si-oxide/Si
Interface.
|
Toru
Akiyama
|
8:00
PM
8:00 PM
|
|
8
|
48266
|
E3.8
|
Atomistic
mechanism of B diffusion in gate Si-oxide.
|
Minoru
Otani
|
8:00
PM
8:00 PM
|
|
9
|
46496
|
E3.9
|
Ultra
Shallow Incorporation of Nitrogen into Gate Dielectrics
by Pulse Time Modulated Plasma.
|
Seiichi
Fukuda
|
8:00
PM
8:00 PM
|
|
10
|
47701
|
E3.10
|
First-principles
study of behaviour of excess Si atoms around ultra-thin
Si-oxide/Si interfaces.
|
Hiroyuki
Kageshima
|
8:00
PM
8:00 PM
|
|
11
|
47620
|
E3.11
|
Degradation
of Ultrathin SiO2 Films by Dynamic Stress --- A Local
Study by Scanning Probe Mircoscopy/Spectroscopy
|
Kun
Xue
|
8:00
PM
8:00 PM
|
|
12
|
45885
|
E3.12
|
Conductance
Transient Comparative Analysis of ECR-PECVD Deposited
SiN|*bsub*|x|*esub*|, SiO|*bsub*|2|*esub*|/SiN|*bsub*|x|*esub*|
and SiO|*bsub*|x|*esub*|N|*bsub*|y|*esub*| Dielectric
Films On Silicon Substrates.
|
Helena
Castan
|
8:00
PM
8:00 PM
|
|
13
|
46716
|
E3.13
|
Ultrathin
oxynitride films formed by using pulse-time-modulated
nitrogen beams.
|
Seiji
Samukawa
|
8:00
PM
8:00 PM
|
|
14
|
46524
|
E3.14
|
Thermally
Grown and Reoxidized Nitrides as Alternative Gate Dielectrics
|
Alexandra
Ludsteck
|
8:00
PM
8:00 PM
|
|
15
|
49136
|
E3.15
|
Low-temperature
growth of HfO2 dielectric layers by plasma assisted
MOCVD
|
Giovanni
Bruno
|
8:00
PM
8:00 PM
|
|
16
|
53538
|
E3.16
|
Characterization
of Si/SiO|*bsub*|2|*esub*| interfaces in silicon-on-insulator
by soft-x-ray resonant scattering
|
Eric
Wiedemann
|
8:00
PM
8:00 PM
|
|
17
|
54551
|
E3.17
|
On
the thermal re-oxidation of silicon oxynitride.
|
Arturo
Morales-Acevedo
|
8:00
PM
8:00 PM
|
|
18
|
45888
|
E3.18
|
On
the Interface Quality of MIS Structures Fabricated from
Atomic Layer Deposition of HfO|*bsub*|2|*esub*|-SiO|*bsub*|2|*esub*|,
Ta|*bsub*|2|*esub*|O|*bsub*|5|*esub*| AND Nb|*bsub*|2|*esub*|O|*bsub*|5|*esub*|-Ta|*bsub*|2|*esub*|O|*bsub*|5|*esub*|-Nb|*bsub*|2|*esub*|O|*bsub*|5|*esub*|
Dielectric Thin Films.
|
Salvador
Duenas
|
8:00
PM
8:00 PM
|
|
19
|
46169
|
E3.19
|
Crystallinity
and Wet Etch Behavior of HfO2 Films Grown by MOCVD.
|
Katherine
Saenger
|
8:00
PM
8:00 PM
|
|
20
|
46320
|
E3.20
|
Determination
of Nano and Sub-Nano Fluctuations in Surface Oxides
of GaSb with Br-IBAE.
|
Kannan
Krishnaswami
|
8:00
PM
8:00 PM
|
|
21
|
46679
|
E3.21
|
Theoretical
study of reaction mechanisms of ZrCl|*bsub*|4|*esub*|
with hydrated and hydroxlated Si(100) surfaces
|
Max
Petersen
|
8:00
PM
8:00 PM
|
|
22
|
46751
|
E3.22
|
High-k
ZrO2 Gate Dielectric on Strained-Si
|
Sekhar
Bhattacharya
|
8:00
PM
8:00 PM
|
|
23
|
46799
|
E3.23
|
Praseodymiun
silicate formation by post-growth high temperrature
annealing.
|
Akira
Sakai
|
8:00
PM
8:00 PM
|
|
24
|
47496
|
E3.24
|
Analysis
of N2, NH3 annealing effect on HfxAlyOz gate dielectric
films grown by chemical vapor deposition using a single
molecular precursor.
|
Suk
Woo Lee
|
8:00
PM
8:00 PM
|
|
25
|
47639
|
E3.25
|
Silicide
Formation at ZrO|*bsub*|2|*esub*|/Si and HfO|*bsub*|2|*esub*|/Si
Interfaces Induced by Ar|*bsup*|+|*esup*| Ion Bombardment
|
Andrei
Zenkevich
|
8:00
PM
8:00 PM
|
|
26
|
48867
|
E3.26
|
Laser
Assisted Molecular Beam Deposition of Hafnium Oxide
and Zirconium Oxide Thin Films for Gate Dielectrics
Applications.
|
James
Garvey
|
8:00
PM
8:00 PM
|
|
27
|
49833
|
E3.27
|
Room
Temperature Fabrication of Al|*bsub*|2|*esub*|O|*bsub*|3|*esub*|/TiO|*bsub*|2|*esub*|(TiAlO|*bsub*|x|*esub*|)/Al|*bsub*|2|*esub*|O|*bsub*|3|*esub*|
Nanolaminates for High-k Gate Dielectrics.
|
Wei
Fan
|
8:00
PM
8:00 PM
|
|
28
|
49474
|
E3.28
|
Characterization
of Titanium-Aluminum Oxide Thin Films for New Generation
of CMOS Gates via Spectroscopic Ellipsometry.
|
Ciro
Lopez
|
8:00
PM
8:00 PM
|
|
29
|
49880
|
E3.29
|
High-k
Dielectric Characterization by combined VUV Spectroscopic
Ellipsometry and X-Ray Reflectometry.
|
Lianchao
Sun
|
8:00
PM
8:00 PM
|
|
30
|
49421
|
E3.30
|
Strontium
Titanate Thin Films on Thermally Oxidized and Bare Si
Substrates.
|
Natalya
Suvorova
|
8:00
PM
8:00 PM
|
|
31
|
49778
|
E3.31
|
Optical
and Dielectrical Properties of Eu- and Y-Polytantalate
Thin Films Grown by RF Sputtering on Si Substrates
|
Vladimir
Vasilyev
|
8:00
PM
8:00 PM
|
|
32
|
50167
|
E3.32
|
Characteristics
of hetero structures composed of oxides and foreign
compound materials on Si for the future novel devices
|
Yoo
YoungZo
|
8:00
PM
8:00 PM
|
|
33
|
50168
|
E3.33
|
The
adoption and nitridation of Al2O3 inter-layer for improving
thermal stability and flat-band behavior of HfO2 gate
dielectric films grown by atomic layer deposition.
|
Hong
Bae Park
|
8:00
PM
8:00 PM
|
|
34
|
50848
|
E3.34
|
First-principles
study of ultra-thin SrO, TiO|*bsub*|2|*esub*| and SrTiO|*bsub*|3|*esub*|
films on MgO(001)
|
Fabio
Finocchi
|
8:00
PM
8:00 PM
|
|
35
|
52933
|
E3.35
|
High
Temperature AlN Dielectrics for Passivation of SiC Power
Devices
|
B
Nagaraj
|
8:00
PM
8:00 PM
|
